High Thermoelectric Properties of PbTe Doped with Bi2Te3 and Sb2Te3

The composition-dependent thermoelectric properties of lead telluride (PbTe) doped with bismuth telluride (Bi2Te3), antimony telluride (Sb2Te3) and (BiSb)2Te3 have been studied at room temperature. All the sampies exhibit small thermal conductivity. The figures of merit, 7.63, 1.03 and 8.97 x 10-4, have been obtained in PbTe with these dopants, respectively. These values are several times higher than those of PbTe containing other dopants with small grain sizes. The high thermoelectric performance is explained by electronic topological transition induced by alloying. The results indicate that these dopants are effective to enhance the thermoelectric performance of PbTe.     

ВЛИЯНИЕ СТАРЕНИЯ НА Э ЛЕКТРИЧЕСКИЕ СВОЙСТ ВА ПОЛУПРОВОДНИКОВОЙ С ИСТЕМЫ Bi2Te3-Bi2Se3

, Bi₂Te₃-Bi₂Se₃. , , , . .

---

Influence of ageing on change in electrical properties of semiconducting systems of Bi₂Te₃-Bi₂Se₃

The paper describes the effect of ageing observed on a semiconducting system Bi₂Te₃ — Bi₂Se₃. It is shown that the change in electrical conductivity and thermoelectric force, which takes place during ageing, is caused by the change in concentration of the free electrons. The influence of this process on the efficiency of equipment employing the Peltier effect is analyzed.

     

A b initio calculation of the growth of Te nanorods and Bi2Te3 nanoplatelets

In this paper the growth mechanism of a Te/Bi2Te3 novel structure is studied by ab-initio calculations. The results show that the growth of Te nanorods is determined by the adsorption energy of Te atoms on different crystalline Te surfaces. The adsorption energy of Te on the Te （001） surface is 3.29 eV, which is about 0.25 eV higher than that of Te on the Te （110）. This energy difference makes the preferential growth direction along the 〈 001 〉 direction. In addition, the higher surface energy of Bi2Te3 （110） and the lattice misfit between crystalline Bi2We3 and Te along 〈 001 〉 direction are considered to explain the growth of the Bi2Te3 nanoplatelets, in which Volmer-Weber model is used. The theoretical results are in agreement with experimental observation.     

压力诱导酌拓扑绝缘体化合物Bi2Te3常压相的超导性

通过高压电阻测量,发现了拓扑绝缘体化合物BizTe3压力诱导的超导性,在3-6GPa的压力范围内,超导临界温度L约为3K．高压下原位同步辐射的结果证明这个超导相来源于常压相结构．通过霍尔效应的测量,发现超导的Bi2Te3样品的载流子为P型．对高压同步辐射结果Reitveld精修得到的晶格参数和原子位置,并以此进行第一性...     

Investigation of a high-temperature phase of 3Bi2O3·2TeO2 binary oxide

The high-temperature phase of 3Bi₂O₃·2TeO₂ binary oxide is characterized by thermal analysis, X-ray powder diffraction, and¹²⁵Te Mössbauer spectroscopy. The phase, obtained by rapid quenching from 900 °C, is identified to be cubic Bi₆Te₂O₁₃ with an oxygen-deficient fluorite structure, which is isomorphous with -Bi₂O₃.     

Bi2Te3 基花状纳米片粉体的制备及热电性能研究

本文通过选用不同乙二胺四乙酸(EDTA) 的用量采用水热法制备出了具有花状纳米片形貌的碲化铋(Bi2Te3 ) 纳米粉体, 研究了不同 EDTA 的用量对 Bi2Te3 纳米粉体花状纳米片形貌的影响, 结果表明 EDTA 的用量对粉体的成相和形貌有很大的影响. EDTA 用量为0.2 g 是最佳值, 有助于形成纯相的 Bi2Te3 花状纳米片. 并以 Y元素掺杂为例, 研究了 EDTA 用量对元素掺杂 Bi2Te3 纳米粉体花状形貌的影响, 研究发现元素掺杂后对 Bi2Te3粉体的微观形貌有一定的影响. 为了保持元素掺杂 Bi2Te3 纳米粉体的花状形貌,EDTA 合适的用量至关重要. 以Y0 .2Bi1 .8Te3 为例, 研究了 EDTA 用量对样品的热电性能的影响. 结果表明, 花状纳米片形貌有利于在降低样品电阻率的同时有效降低样品的热导率, 从而大大增加了样品的ZT 值.     

Influence of silver on the galvanomagnetic properties and energy spectrum of mixed (Bi1− x Sbx)2Te3 crystals

An investigation is made of the temperature dependences of the resistivity in the range 4.2–300 K, the Hall effect, and the Shubnikov-de Haas effect in magnetic fields up to 40 T in (Bi_{1? x} Sb_x)₂Te₃Ag_y single crystals (0 ≤ x ≤ 0.75). Doping (Bi_{1? x} Sb_x)₂Te₃ crystals with silver showed that in Sb₂Te₃ and (Bi_{1? x} Sb_x)₂Te₃ crystals unlike Bi₂Te₃ silver exhibits acceptor properties. The angular and concentration dependences of the Shubnikov-de Haas effect were studied in (Bi_{1? x} Sb_x)₂Te₃Ag_y. It was established that the anisotropy of the ellipsoids of the upper valence band in Bi_0.5Sb_1.5Te₃ remains unchanged as a result of silver doping.     

Synthesis of α-In 2 Te 3 thin films from In/Te bilayer by Si ion irradiation

In this work, In/Te bilayer thin films were prepared using sequential thermal evaporation method and subsequently irradiated using swift heavy ions (SHIs) of 100 MeV silicon (Si) with different fluences (1×10¹³ to 5×10¹³/cm²). The inter-diffusion of In and Te layers was highly controlled by SHI irradiation and the In₂Te₃ formation capability was compared with that of the conventional annealing method. The structural as well as optical properties of a post-sintered SHI-irradiated In/Te bilayer were investigated using X-ray diffraction (XRD) measurements and UV–visible spectroscopy, respectively. We found that irradiated samples showed single-phase In₂Te₃ under post-annealed conditions at 150 °C unlike that prepared using the conventional thermal annealing method, which showed mixed phases under similar conditions. This confirms the effective inter-diffusion in bilayer films by SHI irradiation toward the formation of single-phase In₂Te₃. The estimated optical band gap energy was found to be 1.1±0.5 eV and strongly corroborated the XRD results. In addition, the estimated refractive index (n) value of the SHI-irradiated sample (～3.3) was higher than that of the sample obtained through the conventional annealing method (～2.8). This proves that SHI offers a highly compact nature even at low temperatures. This work has a wide scope for achieving single-phase alloyed films through bilayer mixing by SHI irradiation.     

Electrical transport characteristics of ZnO–Bi2O3–B2O3 glasses

Optically clear glasses in the ZnO–Bi₂O₃–B₂O₃ (ZBBO) system were fabricated via the conventional melt-quenching technique. Dielectric constant and loss measurements carried out on ZBBO glasses unraveled nearly frequency (1 kHz–10 MHz)-independent dielectric characteristics associated with significantly low loss (D?=?0.004). However, weak temperature response was found with temperature coefficient of dielectric constant 18?±?4 ppm °C^?1 in the 35–250 °C temperature range. The conduction and relaxation phenomena were rationalized using universal AC conductivity power law and modulus formalism respectively. The activation energy for relaxation determined using imaginary parts of modulus peaks was 2.54 eV which was close to that of the DC conduction implying the involvement of similar energy barriers in both the processes. Stretched and power exponents were temperature dependent. The relaxation and conduction in these glasses were attributed to the hoping and migration of Bi³⁺ cations in their own and different local environment.     

Nanostructuring and improved performance of ternary Bi–Sb–Te thermoelectric materials

A ternary (Bi,Sb)₂Te₃ bulk nanostructured thermoelectric compound has been prepared by a combination of hydrothermal synthesis and hot pressing. It was found that the grain sizes of the hot-pressed bulk sample vary from tens to hundreds of nanometers, which would be favorable to enhance the scattering of both carriers and phonons, resulting in a high Seebeck coefficient with a satisfactory electrical conductivity and a very low thermal conductivity. The highest figure of merit ZT of the nanostructured (Bi,Sb)₂Te₃ bulk sample reaches 1.28 at 303 K, which is not only remarkably higher than the zone-melted one, but also higher than commercial state-of-the-art Bi₂Te₃-based materials. PACS  72.20.Pa; 73.63.Bd; 81.07.Bc     

粗糙界面对Bi2Te3/PbTe超晶格热电优值影响的理论分析

以Bi2Te3/PbTe超晶格薄膜为例,分析电子在Bi2Te3量子阱中的输运过程,综合了薄膜的经典散射效应和理想量子效应,并以此混合效应为基础,在PbTe障碍层厚度一定时,模拟计算了两种混合效应中量子效应占不同比例时,Bi2Te3/PbTe超晶格热电优值的变化.在镜面反射占混合效应的0 3时,得到的热电优值与当前报道的量子阱超晶格的实验值接近.     

Elastic moduli and theoretical estimations of physical properties of Ge3Se7–As2Te3

The Bulk (100-x)Ge₃Se₇ - (x)As₂Te₃ (0 ≤ x ≤ 30) glassy alloys were prepared using the melt quenching technique. The elastic moduli (Bulk (K), Micro-hardness (H), Young (Y)), and Poisson's ratio (P_r) of the prepared glasses have been determined using the measured values of the ultrasonic velocities and density (ρ). Values of ρ were measured, then the molar volume (V_m) was estimated theoretically. The DSC thermograms are used to determine the glass transition temperature (T_g). The thermal evaporation method was used to prepare the (100-x)Ge₃Se₇- (x)As₂Te₃ (0 ≤ x ≤ 30) thin films under a vacuum of about 10⁻⁴Pa. The absorbance (A) of the films in the spectral range from 0.45 to 0.85 μm has been measured, then the absorption coefficient (α) and energy gap (E_g) were determined. The Chemical Bond Approach (CBA) has been used successfully to estimate theoretically various physical and structural characteristics of the studied system. Theoretical values of E_g and T_g have been obtained using different methods. The results proved a remarkable agreement between the theoretical and experimental values for both the E_g and T_g. The E_g values decreased from 2.1 to 1.73 eV by increasing the As₂Te₃ content from 0 to 30 at. %. Therefore, these compounds can be used as an absorbing layer for electromagnetic radiation in photovoltaic devices and sensors.     

TeI4掺杂量对n型Bi2Te3基烧结材料热电性能的影响

采用区熔法结合放电等离子体快速烧结(SPS)技术制备了n型Bi2Te3基热电材料.在300-500K的温度范围内测量了各热电性能参数,包括电导率(σ)、塞贝克系数(α)和热导率(κ),研究了掺杂剂TeI4的含量(质量百分比分别为0,0.05,0.08,0.10,0.13和0.15wt%)对热电性能的影响.结果表明:试样的载流子浓度(n)随TeI4含量增加而增大,使电导率增大、塞贝克系数的绝对值先增大而后减小,从而导致品质因子(α2σ)呈先增加后降低的变化趋势;同时,由于异质离子(I-)以及载流子对声子的散射作用增强,可显著降低其晶格热导率.烧结材料的性能优值(ZT=α2σT/κ)对应于TeI4含量为0.08wt%有其最大值,约为0.92.此外,烧结材料的抗弯强度增加至80MPa左右,从而可以显著改善材料的可加工性以及元器件的使用可靠性.     

Study on the delamination of tungsten thin films on Sb2Te3

To investigate the reliability of electrode materials for chalcogenide random access memory （C-RAM） applications, the geometry and time evolution of the worm-like delamination patterns on a tungsten/Sb2Te3 bilayer system surface are observed by field emission scanning electronic microscope （FESEM） and optical microscopy. The tungsten film stress and interface toughness are estimated using a straight-side model. After confirming the instability of this system being due to large compressive stress stored in the tungsten film and relative poor interface adhesion, a preliminary solution as the inset of a TiN adhesion layer is presented to improve the system performances.     

The effect of Bi content on the thermal stability and crystallization of Se–Te chalcogenide glass

Glass formation and devitrification of intermediate alloys in the Se–Te–Bi system were studied by differential scanning calorimetry. A comparison of various simple quantitative methods to assess the level of stability of the glassy materials in the above-mentioned system is presented. All of these methods are based on characteristic temperatures, such as the glass transition temperature, T _g, the onset temperature of crystallization, T _in, the temperature corresponding to the maximum crystallization rate, T _p, or the melting temperature, T _m. In this work, a kinetic parameter, K _r(T), is added to the stability criteria. The thermal stability of several compositions of Se–Te–Bi was evaluated experimentally and correlated with the activation energies of crystallization by this kinetic criterion and compared with those evaluated by other criteria. All the results confirm that the thermal stability decreases with increasing Bi content in this glassy system. The crystallization results are analysed and the activation energy and mechanism of crystallization characterized.     

Calorimetric study of specific heat in glassy Se–Te–Sn–Bi system using MDSC technique: effect of Bi incorporation

Bismuth has historical significance as a modifier in chalcogenide glasses due to the p- to n-type transition at a particular composition of definite glassy systems after its incorporation. We have synthesized some new quaternary glasses using Bi as a modifier in ternary Se₇₈Te₂₀Sn₂ alloy as parent glass in light of this information. Modulated differential scanning calorimetry measurements have been made on glassy Se_{78? x} Te₂₀Sn₂Bi _x (0?≤?x?≤?6) alloys for specific heat studies. We have observed an expected enormously large increase in the specific heat values in the glass transition region. The composition dependence of specific heat values above the glass transition temperature (C_pe ) and below the glass transition (C_pg ) is also discussed in this article.     

129Te Mössbauer emission spectroscopic study of the V-Te system: V3Te4, V5Te8 and VTe2 phases

The hyperfine interaction in the VTe system (V₃Te₄, V₅Te₈ and VTe₂ phases) was studied by means of the ¹²⁹Te Mössbauer emission spectroscopy. The transferred magnetic hyperfine field at the ¹²⁹I site was observed at 16K for the V₅S₈-type V_2.60Te₄ which has T_N at 52K. It was found that the ionicity estimated from the isomer shift decreases with decreasing the vanadium content, which is in better agreement with the earlier results on similar chalcogenide systems such as CrTe.     

Thermal dependence of conduction properties in the Bi2O3Pb2OF2 system

Conduction properties of bismuth-lead oxyfluorides (Bi,Pb)₂(O,F)₃ have been investigated by complex impedance analysis. A special attention has been drawn to a hexagonal solid solution Bi_(1−x)Pb_xO_(1.5−x)F_x (0.45⩽x⩽0.741 at 770 K), which is isostructural with ALa₂O₃. Conductivity values range from 3 × 10⁻⁵ to 3 × 10⁻² (ω cm)⁻¹ at 585 K. A minimum associated with a maximum in activation energy is observed for the composition x = 0.5 i.e. BiPbO₂F.