Predictions of the bonding properties inCd1 − xZnxTe

The electronic, optical and elastic properties of the ternary II–VI semiconductor alloys Cd_1 − x Zn _xTe are calculated by thesp³s ^*  semi-empirical tight-binding theory and the bond-orbital model. We found a nonlinear decrease of the transverse effective charge and refractive index and a nonlinear increase of the bandgap and elastic constants with increasing Zn composition x. For all these behaviours, the corresponding bowing factors are predicted. The results are compared with previous theoretical estimates and experiments.     

Parametric Model of the Optical Constant Spectra of Hg1 – xCdxTe and Determination of the Compound Composition

Optics and Spectroscopy - A parametric model describing the spectra of optical constants n(λ) and k(λ) of a Hg1 – xCdxTe (MCT) solid solution for the x values in...     

Coverage dependence of glycine adsorption on the Ge(100) − 2 × 1 surface

A combination of infrared spectroscopy, X-ray photoelectron spectroscopy and density functional theory has been used to investigate the adsorption behavior of glycine at the Ge(100) ? 2 × 1 surface under ultrahigh vacuum conditions. Comparison of experimental and simulated IR spectra indicates that at 310 K, glycine adsorbs on Ge(100) ? 2 × 1 via O–H dissociation, with some fraction of the products also forming an N dative bond to a neighboring germanium atom. O–Ge dative bonding is not observed. As coverage increases, the surface concentration of the monodentate O–H dissociated adduct increases, while that of the N dative-bonded species appears constant. XPS data support and clarify the IR findings and reveal new insights, including the presence at higher coverage of a minor product that has undergone dual O–H and N–H dissociation. These findings are supported by the calculated energy diagrams, which indicate that the reaction of a glycine molecule on the Ge(100) ? 2 × 1 surface via O–H dissociation and interdimer N dative bonding is both kinetically and thermodynamically favorable and that N–H dissociation of this adduct is feasible at room temperature given incomplete thermal accommodation along the reaction pathway.     

Interaction of Ag with the Si(1 1 1)1 × 1–H surface

Synchrotron radiation based photoemission spectroscopy (SRPES) and low energy electron diffraction (LEED) are used to study the interaction between Ag atoms and the Si(1 1 1)1 × 1–H surface. At an Ag coverage of 0.063 monolayers (ML) on the Si(1 1 1)1 × 1–H surface, the Si 2p component corresponding to Si–H bonds decreases, and an additional Si 2p component appears which shifts to a lower binding energy by 109 meV with respect to the Si bulk peak. The new Si 2p component is also observed for 0.25 ML Ag on the Si(1 1 1)7 × 7 surface. These findings suggest that Ag atoms replace the H atoms of the Si(1 1 1)1 × 1–H surface and form direct Ag–Si bonds. Contrary to the widely accepted view that there is no chemical interaction between Ag particles and the H-passivated Si surface, these results are in good agreement with recent first-principles calculations.     

Theoretical study of the reaction 2,5-dimethylfuran + H → products

The reaction of 2,5-dimethylfuran (DMF) with H-atoms was studied using a potential energy surface calculated at the CBS-QB3 level of theory and master equation/RRKM modeling. Hydrogen abstraction by H-atom and hydrogen additions on DMF were considered. As the decomposition pathways of the initial adducts were unknown, a large number of decomposition routes was explored for these adducts. An important number of interconnected product channels were found and preliminary master equation calculations were performed to select the crucial wells and exit channels. The ipso substitution DMF + H → methylfuran (MF) + CH₃ and the formation of 1,3-butadiene and acetyl radical (CH₃CO) were found to be the major product channels in the addition process. The total calculated rate constant was found in good agreement with experimental data and is nearly pressure-independent. A small sensitivity to pressure was found for the computed branching ratios. At 1 bar, the yields of the two product channels of the addition process are maximal at 1100 K with computed branching ratios of 39% (MF + CH₃) and 27% (1,3-C₄H₆ + CH₃CO). Above 1300 K, hydrogen abstraction by H-atom becomes dominant and reaches a branching ratio of 56% at 2000 K.     

Calculation of the optical and electronic properties of the zinc-blende alloy Zn1 − xMgxSe

In order to clarify the electronic and optical properties of wide-energy gap zinc-blende structures ZnSe, MgSe and their alloys (ZnSe)_1 − x(MgSe)_x, a simple pseudo-potential scheme (EPM) within an effective potential, the virtual crystal approximation (VCA) which incorporates compositional disorder as an effective potential, is presented. Various quantities, including the fundamental band gap, the energies of several optical gaps, charge densities, ionicity character, transverse effective charge, and refractive index are obtained for this alloy.     

H/D Isotope Effect in the Conductivity of CaZr1 – xScxO3 – α in Reducing Atmospheres

Physics of the Solid State - The ionic (proton and deuteron) conductivity of the system CaZr1 – xScxO3 – α (x = 0.03–0.20) is studied...     

On the superconductivity and structural properties of YBa2Cu3 − xCdxO7 − y

A series of superconducting cuprates with the nominal composition YBa₂Cu_3 − xCd_xO_7 − yand the effect of Cd substitution on Cu sites in this compound is presented. X-ray powder diffraction patterns for these cadmium cuprates with reduced diamagnetism indicate an orthorhombic unit cell like-perovskite structure for (0 ≤ x ≤ 0.15), while for higher Cd concentration, i.e.x = 1.0 the material is polyphasic. The observed superconducting transition temperature of the samples is nearly the same ([formula] K), except for (x = 1.0) whereT_cdrops to 72 K and a transition from metallic to semiconducting behavior of the normal state of the resistivity is observed. Such a decrease inT_cfor higher Cd concentration could be attributed to the presence of the green phase in this composition.     

Segregation at the surfaces of CuxPd1 − x alloys in the presence of adsorbed S

The influence of adsorbed S on surface segregation in Cu_xPd_1 ? x alloys (S/Cu_xPd_1 ? x) was characterized over a wide range of bulk alloy compositions (x = 0.05 to 0.95) using high-throughput Composition Spread Alloy Film (CSAF) sample libraries. Top-surface and near-surface compositions of the CSAFs were measured as functions of bulk Cu composition, x, and temperature using spatially resolved low energy ion scattering spectroscopy (LEISS) and X-ray photoemission spectroscopy (XPS). Preferential segregation of Cu to the top-surface of the S/Cu_xPd_1 ? x CSAF was observed at all bulk compositions, x, but the extent of Cu segregation to the S/Cu_xPd_1 ? x surface was lower than the Cu segregation to the surface of a clean Cu_xPd_1 ? x CSAF, clear evidence of an S-induced “segregation reversal.” The Langmuir–McLean formulation of the Gibbs isotherm was used to estimate the enthalpy and entropy of Cu segregation to the top-surface, ΔH_seg(x) and ΔS_seg(x), at saturation sulfur coverages. While Cu segregation to the top-surface of the clean Cu_xPd_1 ? x is exothermic (ΔH_seg < 0) for all bulk Cu compositions, it is endothermic (ΔH_seg > 0) for S/Cu_xPd_1 ? x. Segregation to the S/Cu_xPd_1 ? x surface is driven by entropy. Changes in segregation patterns that occur upon adsorption of S onto Cu_xPd_1 ? x appear to be related to formation of energetically favored PdS bonds at the surface, which counterbalance the enthalpic driving forces for Cu segregation to the clean surface.     

Second harmonic response of the Si(111)7 × 7 surface

Optical second harmonic generation spectra have been experimentally obtained from a clean Si(111) 7 × 7 in two different polarization configurations isolating the rotational anisotropic and isotropic contributions. The energy of the fundamental photon is varied from 0.8 eV to 2.5 eV. For comparison, we also use a microscopic formulation based on the semi-empirical tight binding method to evaluate the nonlinear surface susceptibility tensor χ(2ω). Good agreement between theory and experiment is obtained with respect to the number of resonances, their position in energy, and surface or bulk character.     

First principles total energy calculations of the adsorption of germane and digermane on Si(0 0 1)-c(2 × 4)

First principles total energy studies are performed to investigate the energetics, and the atomic structure of the adsorption of germane (GeH₄), and digermane (Ge₂H₆) on the Si(0 0 1)-c(2 × 4) surface. It has been observed experimentally that adsorption of Ge₂H₆ is a dissociative process, which first yields GeH₃ and then GeH₂ fragments as products. We first study the adsorption of GeH₂ considering two different models; the intra-row and the on-dimer geometries. Our results show that the on-dimer site is more stable than the intra-row geometry by 0.44 eV. This is not a surprise since in the absence of H atoms, adsorption in the on-dimer site leaves no dangling bonds. In contrast, when the GeH₂ fragment is considered together with two H atoms, the intra-row geometry is favored energetically as compared with the on-dimer site, in good agreement with experiment. Similar results have been previously obtained for the adsorption of SiH₂ on Si(0 0 1). Digermane adsorption is explored according to two different geometries. In the first one, we have considered the adsorption as two GeH₃ fragments, while in the second, we have considered the adsorption as two GeH₂ fragments plus 2 H fragments. In good agreement with experiments, it is found that the latter geometry is energetically more favorable.     

Peculiarities of the Composition and Morphology of CdxPb1 – xS Films Formed on Various Substrates

Physics of the Solid State - Chemical deposition from aqueous solutions of films of substitutional CdxPb1&nbsp;–&nbsp;xS solid solutions with a cubic B1 structure on substrates made...     

Passivation effect of allylamine molecule on the electronic structure of a Si(001) − (2 × 1) surface

The chemisorption of the allylamine molecule, which contains two functional groups (ethenyl and hydroxyl), on a Si(001) ? (2 × 1) surface was studied using density functional theory (ab-initio DFT) based on the pseudopotential approach. In particular, we focused on the determination of the most stable position of the CC double bond in the ethenyl group and observation of the passivation effect of allylamine on the electronic structure of the clean Si(001) ? (2 × 1) phase. For this purpose, all of the possible interaction mechanisms occurring at the interface were considered: (i) dissociative bonding where the CC bond is parallel to the silicon surface, (ii) dissociative bonding where the CC bond is perpendicular to the silicon surface, and (iii) the [2 + 2] CC cycloaddition reaction. From our total energy calculations, it was found that the bifunctional allylamine molecule attached to the Si(001) ? (2 × 1) surface through the amino functional group, by breaking the N–H bond and forming a Si–H bond and Si–NHCH2CHCH2 surface fragments. During this process, the ethenyl functional group remains intact, and so can be potentially used as an extra reactive site for additional chemical interactions. In addition to these findings, the nudged elastic band method (NEB) calculations related with the reaction paths showed that the parallel position of the CC bond with respect to the surface of the substrate is more favorable. In order to see the influence of the chemisorbed allylamine molecule on the surface states of the clean Si(001) – (2 × 1), we also plotted the density of states (DOS), in which it is seen that the clean Si(001) – (2 × 1) surface was passivated by the adsorption of allylamine.     

Electronic structure of CuClxBr1 − x,CuClxI1 − xand CuBrxI1 − xalloys

In this work, the electronic structure and disorder effects in copper halides alloys are studied by means of the full potential linearized augmented plane wave (FLAPW) method. The calculated bowing parameter shows that the main contribution is due to the relaxation effects, though the charge transfer remains relatively significant, while the volume deformation contribution is negligible. The total bowing is found to be small in the three studied alloys. Results agree well with experimental and available theoretical works.     

Investigation of the Temperature Dependence of the Spectra of Optical Constants of Hg1 – xCdхTe Films Grown Using Molecular Beam Epitaxy

Optics and Spectroscopy - Based on in situ and ex situ ellipsometric measurements, the spectral dependences of the temperature sensitivity of the optical constants...     

Performance evaluation of 64 × 10 Gbps and 96 × 10 Gbps DWDM system with hybrid optical amplifier for different modulation formats

In this paper, we investigated the performance of multi terabits DWDM system consisting of hybrid optical amplifier RAMAN-EDFA for different data format such as non-return to zero (NRZ), return to zero (RZ) and differential phase shift keying (DPSK). We find that in 64 × 10 and 96 × 10 Gbps, RZ is more adversely affected by nonlinearities, where as NRZ and DPSK is more affected by dispersion. We further show that RZ provide good quality factor (13.88 dB and 15.93 dB for 64 and 96 channels), less eye closure (2.609 dB and 3.191 dB for 64 and 96 channels) and acceptable bit error rate (3.89 × 10⁸ and 1.24 × 10⁹ for 64 and 96 channels) at the respective distance as compare to other existing modulation format. We further investigated the maximum single span distance covered by using existing data formats.     

Structure determination of the Cu(0 0 1)–c(4 × 4)-Sn surface by low-energy electron diffraction

Low-energy electron diffraction (LEED) have been used to determine the Cu(0 0 1)–c(4 × 4)-Sn structure formed at 300 K. It is demonstrated that a structural model suggested by scanning tunneling microscopy observations is correct: The model consists of one substitutional Sn atom and four Sn adatoms in the unit cell. Optimum parameters of the determined c(4 × 4) structure reveal that Sn adatoms laterally are displaced by 0.30 Å away from ideal fourfold-hollow sites along the 〈100〉 directions. It is proposed that such displacements of the Sn adatoms cause the formation of a network of octagonal rings on Cu(0 0 1). The substitutional Sn atom is located at each center of the octagonal rings. The formation conditions of the network are discussed.     

Band Diagram of the InAs1 – ySby/InAsSbP Heterojunction in the Composition Range y < 0.2

Physics of the Solid State - The n+-InAs/n0-InAs1&nbsp;–&nbsp;ySby/p-InAsSbP heterostructures with asymmetric band offsets at the heteroboundaries of the active region have been grown...