Magnetic excitations in EuCu(2)(Si(x)Ge(1-x))(2): from mixed valence towards magnetism

We report the inelastic neutron scattering study of spin dynamics in EuCu(2)(Si(x)Ge(1-x))(2) (x?=?1, 0.9, 0.75, 0.6), performed in a wide temperature range. At x?=?1 the magnetic excitation spectrum was found to be represented by the double-peak structure well below the energy range of the Eu(3+) spin-orbit (SO) excitation (7)F(0)→(7)F(1), so that at least the high-energy spectral component can be assigned to the renormalized SO transition. Change of the Eu valence towards 2?+ with increased temperature and/or Ge concentration results in further renormalization (lowering the energy) and gradual suppression of both inelastic peaks in the spectrum, along with developing sizeable quasielastic signal. The origin of the spectral structure and its evolution is discussed in terms of excitonic model for the mixed valence state.     

Europium valency in EuCu2−x Fe x Si2, EuCu2Si2−x Ge x,EuCu2−x Si2+x and EuNi2−x Si2+x

Mössbauer spectroscopy, X-ray photoemission spectroscopy and magnetization studies of EuCu_2?x Fe _x Si₂, EuCu₂Si_2?x Ge _x , EuCu_2?x Si_2+x , and EuNi_2?x Si_2+x have been performed. In EuFe₂Si₂ and EuNi₂Si₂ the Eu ion is trivalent, in EuCu₂Si₂ it is of intermediate valency. In all systems withx=0, many inequivalent Eu sites of intermediate valency are formed. In EuCu_2?x Fe _x Si₂, the average valency of Eu moves nonmonotonically toward Eu³⁺. In EuCu₂Si_2?x Ge _x , EuCu_2?x Si_2+x and EuNi_2?x Si_2+x , the Eu average valency moves quickly towards Eu²⁺. In all three systems, whenx=1, all Eu ions are already stable divalent. The systems EuCuSi₃ and EuNiSi₃ order magnetically at 40 K and 34 K, and exhibit hyperfine fields of 323 kOe and 458 kOe, respectively. XPS and Mössbauer isomer shift determinations of the average Eu valence as a function of temperature in EuCu_1.5Fe_0.5Si₂ are in good agreement. The experimental observations concerning the Eu valencies can not be explained solely in terms of the local volume available to the Eu ion; the nature of chemical environment plays a dominant role.     

Magnetic and electric properties of (Fe,Co)/(Si,Ge) multilayers

We review selected results concerning the interlayer exchange coupling in Fe/Si _x Fe_1−x , Fe/Ge and Co/Si layered structures. Among the ferromagnet/semiconductor systems, Fe/Si structures are the most popular owing to their strong antiferromagnetic interlayer coupling. We show that such interaction depends not only on semiconducting sublayer thickness, but also on deposition techniques and on the chemical composition of the sublayer as well. In similar heterostructures e.g. Fe/Ge, antiferromagnetic coupling was observed only in ion-beam deposited trilayers at low temperatures. In contrast, in Fe/Ge multilayers deposited by sputtering, no such coupling was found. However, when the Ge is partially substituted by Si, antiferromagnetic interlayer coupling appears. For Co/Si multilayers, we observed a very weak exchange coupling and its oscillatory behavior. The growth of Co on Si occurs in an island growth mode. The evolution of magnetic loop shapes can be successfully explained by the interplay between interlayer coupling and anisotropy terms.     

Electronic states of (2 × 1) and (1 × 1) (111) surfaces of Ge,Si, diamond,GaAs and Ge on Si

The “dangling-bond” surface state dispersion curves, E(k), have been calculated for the (2 × 1) and (1× 1) (111) surfaces of Ge, Si, and diamond, for (1 × 1) GaAs, and for (2 × 1) Ge on Si. The calculations employ the sp³s1 empirical tight-binding model of Vogl et al. and the atomic relaxation of Feder et al. The surface state band gaps are in good agreement with optical-absorption and electron-energy-loss measurements for Ge and Si. For the assumed epitaxial geometry, Ge on Si is predicted to shift the dangling-bond states downward by ≈0.1 to 0.4 eV.     

Self-diffusion of (31)Si and (71)Ge in relaxed Si(0.20)Ge(0.80) layers

Self-diffusion of implanted (31)Si and (71)Ge in relaxed Si(0.20)Ge(0.80) layers has been studied in the temperature range 730-950 degrees C by means of a modified radiotracer technique. The temperature dependences of the diffusion coefficients were found to be Arrhenius-type with activation enthalpies of 3.6 eV and 3.5 eV and preexponential factors of 7.5 x 10(-3) m(2) s(-1) and 8.1 x 10(-3) m(2) s(-1) for (31)Si and (71)Ge , respectively. These results suggest that, as in Ge, in Si(0.20)Ge(0.80) both (31)Si and (71)Ge diffuse via a vacancy mechanism. Since in Si(0.20)Ge(0.80) (71)Ge diffuses only slightly faster than (31)Si , in self-diffusion studies on Si-Ge (71)Ge radioisotopes may be used as substitutes for the "uncomfortably" short-lived (31)Si radiotracer atoms.     

在La2CuO4+y中超导与长程非公度磁有序的共存

铜氧化物超导体的相图具有如下共同特征:未掺杂或很低掺杂浓度对应反铁磁区;最佳掺杂及欠掺杂的低温相是超导区;当掺杂浓度介于上述二者之间时,材料既不超导也不具有反铁磁长程序.一般认为,超导与长程磁有序不能共存.     

Comparison of Si and Ge low-loss spectra to interpret the Ge contrast in EFTEM images of Si(1-x) Ge(x) nanostructures

Recently, an EFTEM imaging method, exploiting the inelastically scattered electrons in the 60-90eV energy range, was proposed to visualise Ge in SiGe alloys [Pantel, R., Jullian, S., Delille, D., Dutartre, D., Chantre, A., Kermarrec, O., Campidelli, Y., Kwakman, L.F.T.Z., 2003. Inelastic electron scattering observation using Energy Filtered Transmission Electron Microscopy for silicon-germanium nanostructures imaging. Micron 34, 239-247]. This method was proven to be highly more efficient in terms of noise, drift and exposure time than the imaging of the weak and delayed ionization GeL2,3 edge at 1236eV. However, the physical phenomenon behind this Ge contrast was not clearly identified. In this work, we explain the origin of this Ge contrast, by comparing in details EELS low-loss spectra (<100eV) recorded from pure Si and Ge crystals. High resolved low-loss experiments are performed using analytical Field Emission Gun Transmission Electron Microscopes fitted or not with a monochromator. Low-loss spectra (LLS) are then deconvoluted from elastic/quasi-elastic and plural scattering effects. The deconvolution procedure is established from Si spectra recorded with the monochromated machine. The absence of second plasmon and the measurement of a band gap (1.12eV) on the Si single scattering distribution (SSD) spectrum allowed us to control the accuracy of the deconvolution procedure at high and low energy and to state that it could be reliably applied to Ge spectra. We show that the Ge-M4,5 ionisation edge located at 29eV, which is shadowed by the high second plasmon in the unprocessed Ge spectrum, can be clearly separated in the single scattering spectrum. We also show that the front edge of Ge-M4,5 is rather sharp which generates a high intensity post edge tail on several tens of eV. Due to this tail, the Si and Ge EELS signals in the 60 to 100eV energy window are very different and the monitoring of this signal gives information about the Ge concentration inside SiGe alloys. It is now evident that the EFTEM imaging technique proposed to quantify Ge (90eV/60eV image ratio) in Si-Ge nanostructures is valid and is a relevant way of exploiting the Ge-M4-5 ionisation edge.     

Magnetic ground state of UCu2X2 (X=Si,Ge) from first principles

The electronic and magnetic structures of UCu₂X₂ germanide and silicide are revisited in view of existing controversy from experimental findings. From self-consistent calculations carried out within the local spin density functional theory using the augmented spherical wave method, the ground state is found to be ferromagnetic within simple and super cell setups. An analysis of the density of states and the chemical bonding shows the dominant role of Cu₂Ge₂-nearly planar like entities within the crystal lattice.     

Ge self-diffusion in epitaxial Si(1)-(x)Ge(x) layers

Diffusion coefficients and activation energies have been determined for Ge diffusion in strain-relaxed Si(1)-(x)Ge(x) with x = 0.00, 0.10, 0.20, 0.30, 0.40, and 0.50. The activation energy drops from 4.7 eV in Si and Si(0.90)Ge(0.10) to 3.2 eV at x = 0.50. This value compares with the literature value for Ge self-diffusion in Ge, suggesting Ge-like diffusion already at x approximately equal to 0.5. The effect of strain on the diffusion was also studied showing a decrease in diffusion coefficient and an increase in activation energy upon going from compressive over relaxed to tensile strain.     

Electronic structure of LaFe2X2 (X = Si,Ge)

Recently found iron-pnictide superconductor (Ba,K)Fe₂As₂ and the heavy-fermion superconductor CeCu₂Si₂ both have the same crystal structure. In this paper we have calculated the electronic structure of LaFe₂Si₂ and LaFe₂Ge₂ from first-principles. These compounds also have the same crystal structure and closely related to both of (Ba,K)Fe₂As₂ and CeRu₂Ge₂. The obtained Fermi surfaces of LaFe₂Si₂ and LaFe₂Ge₂ resemble those of LaRu₂Ge₂, which are already found that they well explain the results of the dHvA experiments of CeRu₂Ge₂. Their density of states curves show the common feature with CaFe₂As₂. The density of states at the Fermi level strongly depends on the distortion of the FeX₄ tetrahedra and/or the height of the X atom from the two-dimensional Fe plane, as also found in iron-pnictide system. The electronic specific heat coefficient is 11.8 mJ/mol K² for LaFe₂Si₂ and 12.5 mJ/mol K² for LaFe₂Ge₂, which is about 1/3 and 1/2 of experimental results, respectively.     

Ferromagnetic quantum critical fluctuations in YbRh2(Si0.95Ge0.05)2

The bulk magnetic susceptibility chi(T,B) of YbRh(2)(Si(0.95)Ge(0.05))(2) has been investigated close to the field-induced quantum critical point at B(c) = 0.027 T. For B < or= 0.05 T a Curie-Weiss law with a negative Weiss temperature is observed at temperatures below 0.3 K. Outside this region, the susceptibility indicates ferromagnetic quantum critical fluctuations, chi(T) proportional, variantT-0.6 above 0.3 K. At low temperatures the Pauli susceptibility follows chi(0) proportional, variant(B-B(c))(-0.6) and scales with the coefficient of the T(2) term in the electrical resistivity. The Sommerfeld-Wilson ratio is highly enhanced and increases up to 30 close to the critical field.     

SO(4) Symmetry and Off-Diagonal Long-Range Order in the Hubbard Bilayer

Yang's η pairing operator is generalized to explore off-diagonal long-range order in the Hubbard bilayer with an arbitrary chemical potential. With this operator and a constraint condition on annihilation and creation operators, we construct explicitly eigenstates which possess simultaneously three kinds of off-diagonal long-range order, i.e., the intralayer one and the interlayer one for on-site pairing, and that for interlayer nearest-neighbor pairing. As in the simple Hubbard model there is also an SO(4) symmetry, with the generators properly defined. A sufficient condition leads to at least one of the above three kinds of off-diagonal long-range order. A constraint relation among different kinds of off-diagonal long-range order is also given. There exists a triplet of collective modes if the U(1) symmetry of a subgroup is spontaneously broken.     

Magnetic properties and hyperfine fields of some Eu-compounds with Si,Ge and Sn

Mössbauer effect and magnetization measurements are reported for the intermetallic compounds Eu-(Si, Ge, Sn) and Eu-(Si₂, Ge₂). The equiatomic compounds show a complex magnetic behaviour while EuSi₂ and EuGe₂ are antiferromagnetic. The hyperfine fields at the Eu and Sn sites in EuSn have the same temperature dependence following aS=7/2 Brillouin function.     

Ge adsorption on the Si(111) surface

Total energy calculations, performed for one monolayer of Ge adsorbed on Si(111), indicate that 1 × 1 models such as the atop site and hollow site adsorption geometries are unstable with respect to the formation of 2 × 1 Seiwatz chains of Ge adatoms. This result indicates that, for one monolayer coverage, Ge-Ge bonds are likely to form.