Al掺杂对Ca2Co2O5结构、电子性质与磁性质的影响研究

采用密度泛函理论模拟分析的方法在赝势法平面波电子波函数的基础上研究了掺杂Ca2Co2O5基体系复合氧化物的微细电子状态,并分析了其晶体结构、能带结构、亚层间及亚层内相互作用及跃迁过程的变化.结果表明,CaCoO层Al掺杂之后晶格a轴和b轴略有收缩,而c轴保持不变,且引起相对能量升高,稳定性较纯Ca2Co2O5有所降低.两种Ca2Co2O5基复合氧化物材料均为金属型能带.掺杂引起d电子对Ca2Co2O5材料电性能的影响弱化,而p电子的影响得到强化.经过Al掺杂之后CoO层在电性能中发挥的作用增大,CaCoO层发挥的作用减小,CoO层中的Co和O对电性能的影响大幅度增强.     

Co3O4纳米花的合成及其磁性

通过水热和热处理的方法，制备了产物Co3O4纳米花. 用X射线粉末衍射、场发射扫锚电镜、透射电镜和红外光谱等手段对产物进行了表征. 结果表明，产物纳米花是由大量的Co3O4纳米须组成，纳 米须的直径为20?40 nm，长度为100?500 nm，具有纳米孔结构，比表面积约为34.61 m2/g. 磁性测量表明，在零场冷却条件下，产物主要表现为反铁磁性；在加场冷却条件下，闭锁温度约为34K时，产物主要表现为铁磁性．     

Structural and Tribological Properties of Polyimide/Al2O3/SiO2 Composites in Atomic Oxygen Environment

Effects of atomic oxygen (AO) irradiation on the structural and tribological behaviors of polyimide/Al₂O₃/SiO₂ composites were investigated in a ground-based simulation facility, in which the energy of AO was about 5 eV and the flux was 7.2 × 10¹⁵ cm^?2.s^?1. The structural changes were characterized by X-ray photoelectron spectroscopy (XPS) and attenuated total-reflection FTIR (FTIR-ATR), while the tribological changes were evaluated by friction and wear tests as well as scanning electron microscopy (SEM) analysis of the worn surfaces. It was found that AO irradiation induced the oxidation and degradation of polyimide (PI) molecular chains. The destructive action of AO changed the surface chemical structure, which resulted in changes of the surface morphology and chemical composition of the samples. Friction and wear tests indicated that AO irradiation decreased the friction coefficient but increased the wear rate of both pure and Al₂O₃/SiO₂ filled PIs.     

Cole-Cole Analysis of the Superspin Glass System Co 80 Fe 20 /Al 2 O 3

Ac susceptibility measurements were performed on discontinuous magnetic multilayers [Co 80 Fe 20 ( t )/Al 2 O 3 (3 nm)] 10 , t = 0.9 and 1.0 nm, by Superconducting Quantum Interference Device (SQUID) magnetometry. The CoFe forms nearly spherical ferromagnetic single-domain nanoparticles in the diamagnetic Al 2 O 3 matrix. Due to dipolar interactions and random distribution of anisotropy axes the system exhibits a spin-glass phase. We measured the ac susceptibility as a function of temperature 20 h T h 100 K at different dc fields and as a function of frequency 0.01 h f h 1000 Hz. The spectral data were successfully analyzed by use of the phenomenological Cole-Cole model, giving a power-law temperature dependence of the characteristic relaxation time c and a high value for the polydispersivity exponent, f , 0.8, typical of spin glass systems.     

Adhesive Properties of the TiAl/Al2O3 Interface

Russian Physics Journal - A systematic study of the atomic and electronic structure of the interface between the γ-TiAl alloy and α-Al2O3(0001) oxide depending on the contact...     

Morphology and Magnetic Properties of Hollow Co3O4 Spheres

Physics of the Solid State - Nanostructured hollow Co3O4 spheres are synthesized by ultrasonic spray pyrolysis. Nanocrystals forming the sphere structure have different sizes and packing density,...     

Optical properties of Co/Al2O3 nano-array composite structure

Co/Al₂O₃ nano-array composite structure assemblies with Co grown in the pores of an anodic alumina membrane (AAM) were obtained by alternating current electrodeposition. X-ray diffraction pattern results show that a mixture of face-centred cubic and hexagonal-close-packed structures, with a preferred (100) direction, co-exists in the Co nanowires. The transmission electron microscopy image reveals that the nanowires are both very regular and uniform, with an average diameter of about 20 nm. The transmission ratio of Co/Al₂O₃ composite in the near-IR and mid-IR wavebands decreases with the increasing of the electrodeposition time, while it rises with the increasing of the pore-widening time. The Co/Al₂O₃ composite has good polarization in the near-IR waveband, and its extinction ratio increases significantly when extending the electrodeposition time. With the expanding of pores in the AAM, the extinction ratio first decreases and then rises. PACS 78.67.-n; 81.05.-t; 81.05.Rm; 81.40.Tv; 82.80.Fk     

Apparent spin polarization decay in Cu-dusted Co/Al2O3/Co tunnel junctions

Co/Al2O3/Co magnetic tunnel junctions with an interfacial Cu layer have been investigated with in situ growth characterization and ex situ magnetotransport measurements. Cu interlayers grown on Co give an approximately exponential decay of the tunneling magnetoresistance with xi approximately 0.26 nm while those grown on Al2O3 have a decay length of 0.70 nm. The difference in decay lengths can be explained by different growth morphologies, and in this way clarifies a present disagreement in the literature. For monolayer coverage of Cu, we show that the tunneling spin polarization is suppressed by at least a factor of 2 compared to Co and beyond approximately 5 ML it becomes vanishingly small.     

On the Possible Magnetic Properties of Ultrathin Mn2GaC Films on Al2O3 Substrates

JETP Letters - The possibility of growth of thin Mn2GaC MAX phase films on Al2O3 substrates with various orientations and their magnetic properties have been studied. The most favorable orientation...     

Properties of strontium titanate in the SrTiO3/CeO2/Al2O3 multilayered structure

Studies of the crystal structure, elemental composition, and dielectric properties of strontium titanate films in SrTiO₃/CeO₂/Al₂O₃ multilayered structures are reported. Data on the crystal lattice and impurity contents have been obtained, and temperature and electric field dependences of the dielectric properties of SrTiO₃ films in the microwave range have been measured. An analysis of the results is made to establish the reason for the nonmonotonic dependence of the small-signal dielectric permittivity of SrTiO₃ films on temperature. Fiz. Tverd. Tela (St. Petersburg) 39, 1024–1029 (June 1997)     

钴铝共掺3C-SiC电子结构和磁性的第一性原理计算

采用基于密度泛函理论的第一性原理计算方法,分别计算了不同Co原子比例单掺杂、Al原子单掺杂和Co-Al共掺杂3C-SiC的电子结构和磁性参数.结果表明:随着掺杂Co原子比例的增大,单个Co原子对体系总磁矩贡献的平均值反而减小.由电子态密度分析掺杂3C-SiC体系中的磁性来源,主要是由Co-3d以及Co原子附近的C-2p电子轨道的自旋极化产生的. Al单掺3C-SiC时体系中每个原子的平均磁矩和体系总磁矩均为0,即Al单掺杂体系不具有磁性.而Co-Al共掺杂得到的体系总磁矩比单掺等量Co时要大约0. 09μB,即Co-3d与Al-3p电子轨道发生轨道杂化,使得Co-Al共掺杂可以增大Co原子对体系总磁矩的贡献.     

Hydrothermal synthesis and electrochemical performance studies of Al2O3-coated LiNi1/3Co1/3Mn1/3O2 for lithium-ion batteries

LiNi_1/3Co_1/3Mn_1/3O₂ nanocrystallites were synthesized by a one-step hydrothermal method, and uniform second particles were formed by a subsequent calcination process. X-ray diffraction results indicate that the as-synthesized material can be indexed by α-NaFeO₂ layered structure with R-3 m space group. The results of Rietveld refinements show the I ₀₀₃/I ₁₀₄ value of the material is 2.032, and the nanostructured material presents low cation mixing, small cell volume, and a consequent suppression of lattice strain. The rate performances of the as-synthesized material can be further improved by coating Al₂O₃. The discharging capacity of Al₂O₃-coated material reaches 154.4 mAh g^?1, and the capacity retention maintains 80.3 % after 50 cycles at 5 C in the voltage range of 2.5 to 4.5 V, while those of the bare one is only 139.0 mAh g^?1 and 71.6 %, respectively. The transmission electron microcopy observation shows no zigzag layer exists on the surface of particle after cycles for Al₂O₃-coated LiNi_1/3Co_1/3Mn_1/3O₂. Compared to bare LiNi_1/3Co_1/3Mn_1/3O₂, the de-intercalation potential difference before and after cycles of Al₂O₃-coated one is smaller. This indicates that Al₂O₃ coating can reduce the electrochemistry polarization in the electrode bulk.     

CoPt–Al 2 O 3 Nanocomposite Films: Synthesis,Structure, and Magnetic Properties

The structure and magnetic properties of CoPt–Al2O3 nanocomposite films synthesized by the annealing of Al/(Co3O4 + Pt) bilayers on a MgO(001) substrate at 650°C in vacuum are investigated. The synthesized composite films contain ferromagnetic CoPt grains with an average size of 25–45 nm enclosed in a nonconducting Al2O3 matrix. The saturation magnetization (Ms ~ 330 G) and coercivity (Hc ≈ 6 kOe) of the films are measured in the film plane and perpendicular to it. The obtained films are characterized by a spatial rotational magnetic anisotropy, which makes it possible to arbitrarily set the easy magnetization axis in the film plane or perpendicular to it using a magnetic field stronger than the coercivity (H > Hc).     

Magnetic and Transport Properties of Tm2Co7B3 Compound

Magnetic and transport properties of Tm₂Co₇B₃ compound have been studied. This compound crystallizes in the hexagonal Ce₂Co₇B₃ type structure. The coercivity (H _c) of the compound was determined from hysteresis measurements in fields up to 4 T. The temperature dependence of coercivity has been explained by a thermally activated process of domain wall motion. The resistivity at low temperatures shows a T ² dependence. At higher temperatures the resistivity is not a linear function of temperature, which indicates an electron-phonon interaction in the presence of a small s-d scattering.     

Structural, Morphology and Optical Properties of Epitaxial ZnO Films Grown on Al2O3 by MOCVD

Epitaxial ZnO films are grown on Al2O3 （0001） by the MOCVD method. These films are high quality wurtzite crystals with （0001） orientation. Big hexagonal crystallites （diameter from several decades to 100 μm） are found on the surface. Inside these crystallites, a stronger luminescence is observed compared with the plain area. Transmission electronic microscopy reveals that the film is thicker inside the hexagonal crystallites than the plain area, and some crystallites are not connected with each other and are slightly rotated with respect to their neighbours.     

磁性隧道结Ni80Fe20/Al2O3/Co的制备和物性

用等离子体氧化形成绝缘层的方法,重复性地制备出了Ｎｉ８０Ｆｅ２０／Ａｌ２Ｏ３／Ｃｏ磁性隧道结。样品的隧道磁电阻（ＴＭＲ）比值在室温下最高可达６．０％,翻转场（ｓｗｉｔｃｈ ｆｉｅｌｄ）可低于８００Ａ／ｍ,平台宽度约２４００Ａ／ｍ。结电阻的变化范围从几百欧姆到几百千欧。     

Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks

We measure surface recombination velocities (SRVs) below 10 cm/s on p‐type crystalline silicon wafers passivated by atomic–layer–deposited (ALD) aluminium oxide (Al₂O₃) films of thickness ≥10 nm. For films thinner than 10 nm the SRV increases with decreasing Al₂O₃ thickness. For ultrathin Al₂O₃ layers of 3.6 nm we still attain a SRV < 22 cm/s on 1.5 Ω cm p‐Si and an exceptionally low SRV of 1.8 cm/s on high‐resistivity (200 Ω cm) p‐Si. Ultrathin Al₂O₃ films are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is extremely low compared to the frequently used plasma‐enhanced chemical vapour deposition of silicon nitride (SiN_x). Our experiments on silicon wafers passivated with stacks composed of ultrathin Al₂O₃ and SiN_x show that a substantially improved thermal stability during high‐temperature firing at 830 °C is obtained for the Al₂O₃/SiN_x stacks compared to the single‐layer Al₂O₃ passivation. Al₂O₃/SiN_x stacks are hence ideally suited for the implementation into industrial‐type silicon solar cells where the metal contacts are made by screen‐printing and high‐temperature firing of metal pastes. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and Tribological Properties of Polytetrafluoroethylene Composites Filled with Glass Fiber and Al2O3 in Atomic Oxygen Environment

Effects of atomic oxygen (AO) irradiation on the structural and tribological behaviors of polytetrafluoroethylene (PTFE) composites filled with both glass fibers and Al₂O₃ were investigated in a ground-based simulation facility, in which the average energy of AO was about 5 eV and the flux was 5.0 × 10¹⁵/cm² s. It was found that AO irradiation first induced the degradation of PTFE molecular chains on the sample surface, and then resulted in a change of surface morphology. The addition of Al₂O₃ filler significantly increased the AO resistance property of PTFE composites. Friction and wear tests indicated that AO irradiation affected the wear rate and increased the friction coefficient of specimens. The PTFE composite containing 10% Al₂O₃ exhibit the best AO resistance and lower wear rate after long time AO irradiation.