Silica on Silicon Carbide

Silicon carbide (SiC) as both the most important non-oxide ceramic and promising semiconductor material grows stoichiometric SiO ₂ as its native oxide. During passive oxidation, a surface transformation of SiC into silica takes place causing bulk volume and bulk mass increase. This review summarizes state-of-the-art information about the structural aspects of silicon carbide, silica, and SiC–SiO ₂ interfaces and discusses physicochemical properties and kinetics of the processes involved. A special section describes the electronic properties of carbide–oxide interfaces, which are inferior compared to Si–SiO ₂ interfaces, limiting the use of SiC-based electronics. In the oxidation of SiC there is a variety of parameters (e.g., porosity, presence of sintering aids, impurities, crystallographic orientation, surface treatment, and atmospheric composition) influencing the process. Therefore, the kinetics can be complex and will be discussed in detail. Nonetheless, a general linear-parabolic time-law can be found for most SiC materials for passive oxidation, thus indicating a mainly diffusion-controlled mechanism. The pronounced anisotropy of SiC expresses itself by quite different oxidation rates for the various crystallographic faces. Manifold impact factors are reflected by oxidation rate-constants for silicon carbide that vary over orders of magnitude. The understanding of SiC oxidation and silica formation is still limited; therefore, different oxidation models are presented and evaluated in the light of current knowledge.     

Room-Temperature Level Anticrossing and Cross-Relaxation Spectroscopy of Spin Color Centers in SiC Single Crystals and Nanostructures

A sharp variation of the near infrared photoluminescence intensity for spin-3/2 color centers in hexagonal (4H-, 6H-) and rhombic (15R-) SiC polytypes in the vicinity of level anticrossing (LAC) and cross-relaxation in an external magnetic field at room temperature are observed. This effect can be used for a purely all-optical sensing of the magnetic field with nanoscale spatial resolution. A distinctive feature of the LAC signal is a weak dependence on the magnetic field direction that allows monitoring of the LAC signals in the nonoriented systems, such as powder materials, without need to determine the nanocrystal orientation in the sensing measurements. Furthermore, an LAC-like signal is also observed for the spin color centers (NV centers) in diamond in low magnetic fields with only marginal dependence on the magnetic field direction. This effect is enabled to detect weak magnetic fields using nanodiamond samples in the form of disordered mixture. In addition, the optically detected magnetic resonance and LAC techniques are suggested to serve as a simple method to determine the local stress in nanodiamonds under ambient conditions.     

表面态对碳化硅功率金-半场效应管特性的影响

分析了4H-SiC射频功率MESFET栅源和栅漏区域内的表面态形成,建立了包含表面态影响的非线性解析模型,理论描述了对器件输出特性的稳态、瞬态响应.本模型具有计算简单、物理概念清晰的特点.     

碳化硅表面硅改性层的磁介质辅助抛光

为了实现碳化硅表面硅改性层的精密抛光,获得高质量光学表面,对磁介质辅助抛光技术进行研究。设计了适合碳化硅表面硅改性层抛光的磁介质辅助抛光工具,并对抛光工具的材料去除函数进行研究。针对材料去除函数的特性,对数控磁介质辅助抛光的驻留时间算法进行了研究。采用磁介质辅助抛光技术对碳化硅表面硅改性层平面样片进行了抛光实验。经过一次抛光迭代,碳化硅样片表面硅改性层的面形精度(均方根)由0.049λ收敛到0.015λ（λ=0.6328 μm）,表面粗糙度从2 nm改善至0.64 nm。实验结果表明基于矩阵代数的驻留时间算法有效,磁介质辅助抛光适合碳化硅表面硅改性层加工。     

Techniques for Polytypic Transformations in Silicon Carbide

Physics of the Solid State - Two main polytype transformations in silicon carbide, namely, 2H → 6H and 3C → 6H, have been studied by ab initio methods. It has been shown that the...     

Yb：YAG晶体中的色心

在用引上法生长的Ｙｂ：ＹＡＧ晶体中，存在一个独特的色心，其吸收带位于３７５ｎｍ的６２５ｎｍ，随着Ｙｂ２Ｏ３掺杂浓度的增加，色心浓度增加，探讨了晶体生长过程中色心形成机理。高强γ射线辐照Ｙｂ：ＹＡＧ晶体，诱导大量色心的形成。晶体中的 对激发态Ｙｂ＾３＋离子的荧光寿命具有流淬火效应，因此，Ｙｂ：ＹＡＧ激光晶体需要经高温退火，消除色心的影响。     

Electronic Structure of Graphene on Silicon Carbide Intercalated with Silicon and Cobalt Atoms

Physics of the Solid State - The ab initio calculations have been performed for the spin-polarized band structure of graphene on silicon carbide intercalated with cobalt and silicon atoms. The...     

Evolution of Shock Waves in Hot-Pressed Ceramics of Boron Carbide and Silicon Carbide

Technical Physics - In this paper we studied the evolution of shock compression waves in hot-pressed ceramics based on boron carbide and silicon carbide at a maximum compressive stress of 32 and 34...     

二维二元碳化硅纳米结构的等离激元激发

基于含时密度泛函理论,研究两种构型的二维二元碳化硅（SiC）纳米结构的等离激元激发.SiC纳米结构有两个等离激元共振带.由于键长的改变,相对于硅烯纳米结构和石墨烯纳米结构,SiC纳米结构的两个等离激元共振带分别发生蓝移和红移.一种SiC纳米结构的等离激元共振激发依赖于边界的构型和纳米结构形貌;另一种SiC纳米结构的等离激元共振激发对于边界构型和纳米结构形貌的依赖性降低.沿不同方向激发时,等离激元共振特性基本相同.     

碳化硅中惰性气体离子辐照引起缺陷的研究

综述了有关碳化硅材料中惰性气体离子引起辐照缺陷研究的进展。包括借助多种方法对氦离子辐照的碳化硅中氦泡集团形成的剂量阈值的实验研究,基于过冷固体假设对氦泡阈值的理论解释,不同剂量氦泡的两种形态及其机理的研究,以及重惰性气体离子（Ne,Xe）辐照下缺陷演化的特点。This paper gives a review of our recent studies on the defect production in silicon carbide induced by energetic inert-gas-ion irradiation. The work includes the study of the dose threshold for helium bubble formation by combining TEM, RBS-channeling and PAS, the theoretical analysis of the dose threshold for bubble formation based on the Frozen-Matrix assumption, two types of bubble arrangement at different dose regions and the study of damage um-ion production behavior in the case of irradiation with heavier inert-gas-ions （ Ne, Xe） as a comparison to heliirradiation.     

A Scheme for Spin Manipulation in a Quantum Dot with Both Charge and Spin Bias

We propose a scheme for the effective polarization and manipulation of electron spin by using a quantum dot with both charge and spin bias. Using the equation of motion for Keldysh nonequilibrium Green function, we study the spin accumulation and polarization for the system. Through analytical analysis and a few numerical examples, it is demonstrated that fairly large spin accumulation and polarization can be produced due to the breakingsymmetry of the chemical potential for different electron spin in the leads. Moreover, the direction and the strength of the spin polarization can be conveniently controlled and tuned by varying the charge bias or the gate voltage.     

Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer

An epitaxial cubic 350-nm-thick cadmium selenide has been grown on silicon for the first time by the method of evaporation and condensation in a quasi-closed volume. It is revealed that, in this method, the optimum substrate temperature is 590°C, the evaporator temperature is 660°C, and the growth time is 2 s. To avoid silicon etching by selenium with formation of amorphous SiSe₂, a high-quality ~100-nm-thick buffer silicon carbide layer has been synthesized on the silicon surface by substituting atoms. The powder diffraction pattern and the Raman spectrum unambiguously correspond to cubic cadmium selenide crystal. The ellipsometric, Raman, and electron diffraction analyses demonstrate high structural perfection of the cadmium selenide layer and the absence of a polycrystalline phase.     

SiC电子输运特性的Monte Carlo数值模拟

利用系综MonteCarlo法研究了2H ,4H和6HSiC的电子输运特性.在模拟中考虑了对其输运过程有着重要影响的声学声子形变势散射、极化光学声子散射、谷间声子散射、电离杂质散射以及中性杂质散射.通过计算,获得了低场下这几种不同SiC多型电子迁移率同温度的关系,并以4H SiC为例,重点分析了中性杂质散射的影响.最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究.将模拟结果同已有的实验数据进行了比较,发现当阶跃电场强度为10×106V·cm-1时,4H Sic电子横向瞬态速度峰值接近33×107cm·s^-1,6H Sic接近30×107cm·s^-1.     

Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide

The intercalation of iron under a graphene monolayer grown on 4H-SiC(0001) is studied. The experiments have been carried out in situ under conditions of ultrahigh vacuum by low-energy electron diffraction, high-energy-resolution photoelectron spectroscopy using synchrotron radiation, and near carbon K-edge X-ray absorption spectroscopy. The deposited iron film thicknesses have been varied within 0.1–2 nm and the sample temperatures from room temperature to 700°C. It is shown that the intercalation process begins at temperatures higher than ~350°C. In this case, it is found that intercalated iron atoms are localized not only between graphene and a buffer layer coating SiC, but also under the buffer layer itself. The optimal conditions of the intercalation are realized in the range 400–500°C, because, at higher temperatures, the system becomes unstable due to the chemical interaction of the intercalated iron with silicon carbide. The inertness of the intercalated films to action of oxygen is demonstrated.

     

Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal

Physics of the Solid State - The main processes that occur during diffusion of gaseous carbon CO and silicon SiO monoxides through a layer of a single-crystal silicon carbide SiC of the cubic...     

Synthesis of Ultrafine Silicon Carbide Powders in Thermal Arc Plasmas

Ultrafine ?-SiC powders are synthesized in thermal plasmas by a reaction between methane and silicon monoxide. The reaction is carried out in an unconfined plasma jet (22.5 kW) operating at atmospheric Ar pressure. High temperatures (> 10 000 K) combined with ultrarapid quench rates (? 106 K/s) of the plasma lead to a high degree of supersaturation of the chemical vapor, resulting in homogeneous nucleation of ultrafine particles. Product characterizations are pursued with X-ray diffraction analysis, X-ray photoelectron spectroscopy (XPS), scanning, and transmission electron microscopy. The maximum SiC yield determined by thermogravimetric analysis (TGA) is 97.3 percent. Particle size analyses show a bimodal distribution with the majority of the particles falling in a size range from 2 to 40 nm. Triangular and hexagonal SiC particles are observed throughout this work and the nucleation and growth of these particles are discussed.     

On the Adsorption of Gases on Silicon Carbide: Simple Estimates

Physics of the Solid State - The adsorption of atomic and molecular nitrogen and ammonia on silicon carbide is considered within two physically different (solid-state and quantum-chemical)...