量子反常霍尔效应研究进展

在没有外加磁场的作用下就能表现出量子化霍尔电导的量子反常霍尔效应已经成为霍尔家族中的重要一员,其物理起源是体能带反转结构和铁磁性相互作用.量子反常霍尔效应最重要的表现是在边缘态处具有无耗散运动的手性电流,这种性质拥有可以改变未来量子电子学的潜力,极大推动器件小型化、低损耗、高速率发展.近年来,基于理论指导,人们在实验上已多次观察到量子反常霍尔效应.在本文中,从实验层面上重点回顾了量子反常霍尔效应在铬(Cr)、钒(V)掺杂的(Bi, Sb)₂Te₃体系的研究进展,以及目前量子反常霍尔效应在其它体系中的研究现状,深入理解量子反常霍尔效应的起源和机理,最后对量子反常霍尔效应进行总结和展望.     

An Extended Extrinsic Mechanism for Anomalous Hall Effect

The extrinsic mechanism for anomalous Hall effect in ferromagnets is extended to include the contributions both from spin-orbit-dependent impurity scattering and from the spin-orbit coupling induced by external electric fields. The results obtained suggest that, within the framework of the extrinsic mechanisms, the anomalous Hall current in a ferromagnet may also contain a substantial amount of dissipationless contribution independent of impurity scattering. After the contribution from the spin-orbit coupling induced by external electric fields is included, the total anomalous Hall conductivity is about two times larger than that due to soin-orbit dependent impurity scatterings.     

An Extended Extrinsic Mechanism for Anomalous Hall Effect

The extrinsic mechanism for anomalous Hall effect in ferromagnets is extended to include the contributions both from spin-orbit-dependent impurity scattering and from the spin-orbit coupling induced by external electric fields. The results obtained suggest that, within the framework of the extrinsic mechanisms, the anomalous Hall current in a ferromagnet may also contain asubstantial amount of dissipationless contribution independent of impurity scattering. After the contribution from the spin-orbit coupling induced by external electric fields is included, the total anomalous Hall conductivity is about two times larger than that due to spin-orbit dependent impurity scatterings.     

CORE: Frustrated Magnets, Charge Fractionalization, and QCD

I explain how to use a simple method to extract the physics of lattice Hamiltonian systems which are not easily analyzed by exact or other numerical methods. I will then use this method to establish the relationship between QCD and a special class of generalized, highly frustrated anti-ferromagnets.     

Anomalous Hall Effect in Layered Ferrimagnet MnSb_2Te_4

We report on low-temperature electron transport properties of MnSb_2Te_4,a candidate of ferrimagnetic Weyl semimetal.Long-range magnetic order is manifested as a nearly square-shaped hysteresis loop in the anomalous Hall resistance,as well as sharp jumps in the magnetoresistance.At temperatures below 4K,a lnT-type upturn appears in the temperature dependence of longitudinal resistance,which can be attributed to the electron-electron interaction(EEI),since the weak localization can be excluded by the temperature dependence of magnetoresistance.Although the anomalous Hall resistance exhibits a similar lnT-type upturn in the same temperature range,such correction is absent in the anomalous Hall conductivity.Our work demonstrates that MnSb_2Te_4 microflakes provide an ideal system to test the theory of EEI correction to the anomalous Hall effect.     

异常霍尔效应和自旋霍尔效应

异常霍尔效应和自旋霍尔效应是在常规霍尔效应的基础上引发出的2种新现象.本文介绍了这2种现象及其原理和潜在的应用.     

Anomalous Hall effect in granular alloys

A theoretical study is performed of the anomalous Hall effect in granular alloys with giant magnetoresistance. The calculation is carried out within the Kubo formalism and the Green’s function method. The mechanism of asymmetric scattering of the spin-polarized current carriers is considered with allowance for a size effect associated with scattering not only by one grain, but also with more complicated processes of transport among two and three grains. It is shown that scattering of conduction electrons by the interfaces of the grains and the matrix has a substantial effect on the magnitude of the anomalous Hall effect and determines its sign. In general, correlation between the quantities ρ _H and ρ ² is absent, where ρ _H is the Hall resistivity and ρ is the total resistivity of the granular alloy. However, numerical calculation shows that for certain values of the model parameters ρ _H∼ρ ^3.8 and for these same parameter values the amplitude of the giant magnetoresistance reaches 40%, which is found to be in quantitative agreement with the experimental data for Co₂₀Ag₈₀ alloys [P. Xiong, G. Xiao, J. Q. Wang et al., Phys. Rev. Lett. 69, 3220 (1992)]. It is also shown that increasing the resistivity of the matrix leads to a significant growth in the anomalous Hall effect, and more substantial growth for alloys with small grain size, which is in good agreement with experiment [A. B. Pakhomov, X. Yan, and Y. Xu, J. Appl. Phys. 79, 6140 (1996); [X. N. Jing, N. Wang, and A. B. Pakhomov, Phys. Rev. B 53, 14032 (1996)]. Zh. éksp. Teor. Fiz. 112, 2198–2209 (December 1997)     

Anomalous Hall effect in ferromagnetic semiconductors

We present a theory of the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wave function upon traversing closed paths on the spin-split Fermi surface. The quantitative agreement between our theory and experimental data in both (In, Mn)As and (Ga, Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in diluted magnetic semiconductors. The success of this model for (III, Mn)V materials is unprecedented in the longstanding effort to understand origins of the anomalous Hall effect in itinerant ferromagnets.     

Anomalous Hall effect in noncommutative mechanics

The anomalous velocity term in the semiclassical model of a Bloch electron deviates the trajectory from the conventional one. When the Berry curvature (alias noncommutative parameter) is a monopole in momentum space, as found recently in some ferromagnetic semiconductors while observing the anomalous Hall effect, we get a transverse shift, similar to that in the optical Hall effect.     

Electronic States and the Anomalous Hall Effect in Strongly Correlated Topological Systems

Journal of Experimental and Theoretical Physics - Elementary excitations, the spin-liquid state, and the anomalous Hall effect, including the quantum Hall effect, are considered in layered strongly...     

Anomalous Hall Effect in Spin-Polarized Two-Dimensional Hole Gas with Cubic-Rashbsa Spin-Orbit Interaction

Based on the Kubo formalism, the anomalous Hall effect in a magnetic two-dimensional hole gas with cubic-Rashba spin-orbit coupling is studied in the presence of δ-function scattering potential. When the weak, short-ranged disorder scattering is considered in the Born approximation, we find that the self-energy becomes diagonal in the helicity basis and its value is independent of the wave number, and the vertex correction to the anomalous Hall conductivity due to impurity scattering vanishes when both subbandsare occupied. That is to say, the anomalous Hall effect is not vanishing or influenced by the vertex correction for two-dimensional heavy-hole system, which is in sharp contrast to the case of linear-Rashba spin-orbit coupling in the electron band when the short-range disorder scattering is considered and the extrinsic mechanism as well as the effect of external electric field on the SO interaction are ignored.     

Anomalous Hall effect in polycrystalline Ni films

We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (4–6 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well.     

Mg0.3Fe2.7GeTe2 单晶的磁性及霍尔效应研究

Fe3GeTe2 是一种具有稳定长程磁有序的准二维范德瓦尔斯磁性材料, 范德瓦尔斯材料的稳定性和可调性使其在自旋电子器件的应用方面具有巨大潜力. 本文用助熔剂法生长了 Mg 原子掺杂Fe2 位的 Mg0.3Fe2.7GeTe2单晶样品, 并对 Mg 掺杂Fe3GeTe2 的结构、磁性和输运性质的影响进行了研究. 磁性数据表明 Mg 掺杂后铁磁转变温度不变, 但样品的饱和磁矩减小. 输运性质的测量中观察到各向异性的反常霍尔效应, 与Fe3GeTe2 相比, Mg掺杂后的反常霍尔电阻率减小, 同时各向异性发生了变化.     

Anomalous Hall effect in highly Mn-Doped silicon films

The transport and magnetic properties of Mn _x Si_{1 ? x} films with a high (x ≈ 0.35) content of Mn produced by laser deposition at growth temperatures of 300–350°C have been studied in a temperature range of 5–300 K in magnetic fields of up to 2.5 T. The films exhibit a hole-type metallic conductivity and a relatively weak change of magnetization in a temperature range of 50–200 K. An anomalous Hall effect with an essentially hysteretic behavior from 50 K up to ≈230 K has been discovered. The properties of the films are explained by the two-phase model, in which ferromagnetic clusters containing interstitial Mn ions with a localized magnetic moment are embedded in the matrix of a weak band MnSi_{2 ? x} (x ≈ 0.3) type ferromagnet with delocalized spin density.     

Anomalous Hall effect in perpendicular CoFeB thin films

Our recent research achievements in the perpendicular magnetic anisotropy （PMA） properties of the CoFeB sand- wiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin fihn. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeBFFa thin film with a thick MgO layer, which opens a door tbr future device applications of perpendicular ferromagnetic thin films.     

Unusual Anomalous Hall Effect in a Co_2MnSi/MnGa/Pt Trilayer

An ultra-thin Co₂MnSi(0.5 nm)/Mn Ga(1.5 nm) bilayer capped with Pt(5 nm) has been successfully grown by molecular-beam epitaxy.It is a potential candidate of synthetic antiferromagnets due to antiferromagnetic coupling between Co₂MnSi and MnGa,which is a promising skyrmion-racetrack-memory medium without skyrmion Hall effect after capping with a Pt layer.Unusual humps in transverse Hall resistance loops are clearly observed in the temperature range from 260 to 400 K.This an...     

Anomalous hydrodynamics of fractional quantum Hall states

We propose a comprehensive framework for quantum hydrodynamics of the fractional quantum Hall (FQH) states. We suggest that the electronic fluid in the FQH regime can be phenomenologically described by the quantized hydrodynamics of vortices in an incompressible rotating liquid. We demonstrate that such hydrodynamics captures all major features of FQH states, including the subtle effect of the Lorentz shear stress. We present a consistent quantization of the hydrodynamics of an incompressible fluid, providing a powerful framework to study the FQH effect and superfluids. We obtain the quantum hydrodynamics of the vortex flow by quantizing the Kirchhoff equations for vortex dynamics.