Dielectric Spectroscopy of Strongly Correlated Electronic States of Vanadium Dioxide

The thermal evolution of the conductivity of a VO₂ film and database-obtained band gap E_g of film nanocrystallites is traced in the temperature range of –196°C < T < 100°C (77 K < T < 273 K); the level position of donor impurity centers is determined to be E_d = 0.04 eV. It is shown that energy E_g decreases from 0.8 to ～0 eV with an increase in temperature in the range of 273 K < T < 300 K, which is caused by the narrowing of the energy gap due to correlation effects and considered as the temperature-extended Mott “insulator–metal” electron phase transition with the monoclinic lattice symmetry retained. The subsequent jump in the symmetry from monoclinic to tetragonal with a further increase in temperature is considered as the Peierls structural phase transition, the temperature of which is in the vicinity of 340 K and determined by the size effects, nonstoichiometry of VO₂ film nanocrystallites, and degree of their adhesion to the substrate.     

Iron-Alloyed Vanadium Dioxide Analysis Using X-Ray Photoelectron Spectroscopy Technique

Russian Physics Journal - The paper presents the qualitative and quantitative elemental analysis of V0.93Fe0.07O2 compound powder performed by the X-ray photoelectron spectroscopy (XPS) technique....     

钒氧化物薄膜的拉曼散射

用射频磁控溅射以纯金属钒做靶材在氩氧混合气体中制备了钒氧化物 (VO2 (B)、V6O1 3、V2 O5)薄膜。报导了钒氧化物薄膜的拉曼光谱 ,结合这些钒氧化物不同的结构特点 ,对它们的拉曼光谱进行了分类讨论     

沉积工艺对二氧化锆薄膜生长特性影响的研究

利用反应离子束溅射、反应磁控溅射和电子束蒸发在K9基底上沉积ZrO2薄膜,并用原子力显微镜对薄膜表面形貌进行测量。通过数值相关运算,对不同工艺条件下薄膜生长界面进行定量描述,得到了薄膜表面的粗糙度指数、横向相关长度、标准偏差粗糙度等参量。由于沉积条件的不同,薄膜生长具有不同的动力学过程。在反应离子束溅射和反应磁控溅射沉积薄膜过程中,薄膜生长动力学行为均可用Kuramoto-Sivashinsky方程来描述,电子束蒸发制备薄膜的过程可以用Mullins扩散模型来描述,并发现在沉积薄膜过程中基底温度和沉积过程的稳定性对薄膜表面特征影响很大。     

Er2O3薄膜的光学常数和介电性能

采用射频磁控反应溅射技术,在不同的Ar/O2流量比条件下制备了系列Er2O3薄膜样品.采用椭偏光谱和紫外一可见光透射光谱测试分析技术,研究了Er2O3薄膜的折射率、消光系数、透射率和光学带隙等光学常数与制备工艺的关系.研究了不同条件下制备的Er2O3薄膜的介电常数和Ⅰ～Ⅴ特性.结果表明,Er2O3薄膜的折射率、禁带宽度和介电常数随Ar/O2流鼍比的增加而增加,而消光系数基本不随Ar:O2流量比的变化而变化.在Ar:O2流量比为7:1制备的Er2O3薄膜具有较好的物理性能,在可见红外波段其折射率约1.81,消光系数为3.7×10-6,禁带宽度5.73 eV,介电常数为10.5.     

Dielectric and Ferroelectric Properties of Thin Heteroepitaxial Films of SBN-50

Physics of the Solid State - The phase transformations and ferroelectric characteristics of thin films of barium-strontium niobate SBN-50 grown by RF-cathode sputtering in an oxygen atmosphere are...     

Quasi-Stationary Processes of the Dielectric Relaxation in Polycrystalline Thin PZT Films

Physics of the Solid State - The relaxation processes in polycrystalline PZT films formed on silicon substrates have been studied during a quasi-static change in an external electric field. The...     

The Study of Zeolite ZSM-5 by a Dielectric Spectroscopy Method

The dielectric absorption spectrum of zeolite ZSM-5, in the range of frequencies 100 c - 10 Mc, was studied. The influence of the crystallization degree and influence of the Si/Al ratio on the amplitude of the dielectric absorption were analysed. It was observed that _max depends on the Si/Al ratio in an exponential form. An excess of Et.OH in the mixture of crystallization influences favorably the kinetics of the process.     

相变光盘介电薄膜ZnS-SiO2 的微结构和光学特性

采用射频磁控溅射法制备了ZnS-SiO₂ 介电薄膜,利用透射电镜和椭偏仪研究了溅射条件对ZnS-SiO₂薄膜微结构和折射率n的影响.研究表明,ZnS-SiO₂薄膜中存在微小晶粒,大小为2～10 nm的ZnS颗粒分布在SiO₂基体中,当溅射功率和溅射气压变化时,ZnS-SiO₂薄膜的微结构和折射率n发生显著变化,微结构的变化是导致折射率n变化的主要原因,通过优化溅射条件可以制备适用于相变光盘的高质量ZnS-SiO₂介电薄膜.     

Spectroscopy of Zinc Oxide Thin Films near the Fundamental Absorption Edge

Optics and Spectroscopy - The optical absorption spectra of zinc oxide (ZnO) thin films formed by reactive cathode sputtering are studied. The observed absorption of light in the region of photon...     

On a Photoinduced Heterostructure in a Vanadium Dioxide Film

Physics of the Solid State - An athermal photo-induced semiconductor-metal phase transition that occurs in a vanadium dioxide film on an aluminum substrate for time Δt &lt; 1 ps is studied...     

Terahertz and Infrared Spectroscopy of Dense and Porous Organosilicate Glass Thin Films

Doklady Physics - Wide-range measurements of thin films of SiCxOyHz organosilicate glasses, both dense and porous, deposited on dielectric sapphire substrates and conductive layers of platinum and...     

超薄原子蒸汽的透射与反射光谱

通过数值分析研究了超薄气体的透射与反射光谱特性与其厚度大小的树应关系。研究表明,透射光谱随薄膜厚度的增大而展宽,光谱呈现对称性,而在反射的情况下,这一对称性由薄膜厚度为1／4波长的奇数或偶数倍决定。     

衬底温度对氧化锌薄膜的光谱学特性影响研究

采用脉冲激光沉积技术,在不同沉积温度下制备了氧化锌薄膜。对衬底温度为400和700℃的薄膜进行了结构和光谱学性能表征。结果表明:沉积温度为400和700℃时,氧化锌薄膜均为C轴取向生长;但是表面晶粒生长模式由岛状生长转为柱状晶生长,柱状晶的出现导致了氧化锌薄膜拉曼光谱信号的增强、谱线的展宽、以及拉曼禁戒模式的出现;氧化锌UV峰由3.29 eV红移到3.27 eV,这可能是由于沉积温度为700℃时,氧化锌颗粒尺寸显著增大造成的。     

Kinetics of Hydrogenation and Variations in Resistance of Vanadium Thin Films Treated in Atomic Hydrogen Flow

Methods of nuclear reactions, x-ray diffraction analysis, transmission electron and nuclear microscopy were used to investigate the mechanism of hydrogenation of thin vanadium films in their treatment in a flow consisting of a mixture of molecular and atomic hydrogen. It has been shown that the main component penetrating into the metal from the gas phase is atomic hydrogen. At a gas pressure of 10^–2 Pa and room temperature, the dissolution of particles which, in the gas phase, are in molecular form, occurs at a much lower rate. It has been established that the (initially high) rate of variation of the hydrogen concentration in the film decreases during hydrogenation and gradually approaches zero. As this takes place, the hydrogen concentration in vanadium reaches its limiting value equal to about 42.5 at. %. A mathematical model of the hydrogenation of a vanadium film is proposed which describes experimental results based on the relaxation dependence of the hydrogen concentration on hydrogenation time. Comparative analysis of the variations in hydrogen concentration in a film and in film resistance is performed. It has been established that the dependence of the resistance on hydrogen concentration for a thin film hydrogenated in a flow of atomic hydrogen differs from the similar dependence for a bulk material hydrogenated in the atmosphere of molecular hydrogen under the conditions of thermodynamic equilibrium. The features of the behavior of the resistance of a thin film on hydrogenation time revealed experimentally are caused, as in the case of a bulk material, by the formation of the phase of vanadium hydride in the film. The possibility of using vanadium thin films for measuring absolute values of the atomic hydrogen flow density is discussed.     

In Situ Electronic Structure Study of Epitaxial Niobium Thin Films by Angle-Resolved Photoemission Spectroscopy

High-quality single crystalline niobium films are grown on a-plane sapphire in molecular beam epitaxy. The film is single crystalline with a(110) orientation, and both the rocking curve and the reflection high-energy electron diffraction pattern demonstrate its high-quality with an atomically smooth surface. By in situ study of its electronic structure, a rather weak electron-electron correlation effect is demonstrated experimentally in this4 d transition metal. Moreover, a kink structure is observed in the electronic structure, which may result from electron-phonon interaction and it might contribute to the superconductivity. Our results help to understand the properties of niobium deeply.     

激光薄膜损伤的声频判别方法

光学薄膜损伤阈值是衡量光学薄膜抗激光损伤能力的重要参数,而要实现损伤阈值的测试必须先实现薄膜损伤的判识。利用光声频谱特性研究单层氧化硅薄膜在不同激光能量下的损伤情况,简要地分析了声频法判别薄膜损伤的可行性,建立了激光致薄膜产生的声波采集系统,比较和分析薄膜损伤前后的24~40kHz高频段曲线,提取频率特征,并提出利用曲线相似函数进行薄膜损伤的识别。实验数据结果表明,该方法简单易行,可实现在线检测,又能准确判别薄膜损伤。