Influence of impurity and indentation time on dislocation rosettes

It has been shown that the impurity type and indentation time affect appreciable on dislocation rosettes of NaCl single crystals. It was established that the growth of indentation diagonal was not practically followed by the increase of the dislocation zone size. This phenomenon connected with the cross slip processes, which are perhaps more intensive for prolonged indentation time and high temperatures. The assumption is made that the two mechanisms of responsible for indentation formation the movement of dislocations and their multiplication by the cross slip.     

Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation

It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary dislocation slip systems. It is shown that the automatic pulling of large CsI-based crystals can be provided by the introduction of a single Br impurity into the charge; this impurity, to a large extent, strengthens only the top part of the crystal. The absence of plastic deformation in CsI-CsBr(Na) crystals with a diameter Ø300 mm and height h = 600 mm (grown by the continuous method) and Ø500 mm and h = 200 mm (grown by the automatic Kiropulos method) has been experimentally confirmed.     

Possible dynamical mechanism of dislocation drag in metals in the easy slip stage

The slip of an edge dislocation through a system of parallel immobile dislocation dipoles oriented parallel to it has been investigated. A new mechanism of dislocation drag (irreversible transformation of the kinetic energy of a moving dislocation into the energy of natural vibrations of a pair of edge dislocations (forming a dipole), excited by the elastic field of the moving dislocation) is proposed and analyzed. The dynamic drag force of moving dislocation caused by this mechanism is calculated. It is shown that this force is inversely proportional to the slip velocity of mobile dislocations.     

The development of the rolling texture of f.c.c. metals dependent on relative stacking-fault energy

Neutronographic texture investigations are presented for nickel and Co32Ni – the representatives of f.c.c. metals of very high or extremely low relative stacking-fault energies, resp., as well as for α-brasses with zinc concentrations between 1 and 4 atomic percent, which are typical for mean values of γ/Gb. The discussion of the results is based on three-dimensional distribution functions calculated by series expansion. For the main texture components a higher indexing as usually is assumed what is also due to the orientations of these minor components originating in the mechanical twinning. The origin of additional minor components of additional minor components is attributed to the formation of surface textures and recrystallization phenomena. The texture development at extreme relative stacking-fault energies is associated with cross slip or microtwinning and partial glide, resp.     

Deformation Induced Micro-Twins in CdTe?

Room- and high-temperature micro-indentation experiments have been performed to answer the question if, concerning a material with very low stacking-fault energy like CdTe, deformation induced twinning occurs in these substances during or shortly after growth. Micro-twins appear in consequence of room-temperature deformation only, whereas microindentation at 565°C does not produce any twins, but leads to widely expanded dislocation glide-figures, due to dislocation climbing and/or cross-gliding.     

Dynamic aging of dislocations in materials with a high crystalline relief: Competition between diffusion and impurity entrainment

A model of the dynamic interaction of dislocations with the impurity subsystem of crystals that have a high lattice potential relief (Peierls barriers) has been developed. It is shown that the microscopic structure of migration barriers for impurities near a dislocation core may cause qualitatively different behavior of the impurity atmosphere on a moving dislocation. It is justified that the impurity kinetics during atmosphere formation includes two stages. The first (initial) stage is fast and significantly nonequilibrium; it is followed by the second stage, characterized by a slower approach to equilibrium. The initial stage manifests itself at a sufficiently fast dislocation motion and may lead to an anomalous increase in the driving force (or the yield strength of the material) with an increase in the temperature in some range. Blocking of the dislocation motion by impurities may cause inverse brittle-ductile transition, which is observed in some materials with an increase (rather than the usual decrease) in temperature.     

Impurity effects on low-angle boundary formation in silicon single crystals

The combined effects of crystal growth conditions and impurity (Sb, P, B, Ga) concentration on low-angle boundary (LAB) formation in silicon single crystals growing by Czochralski technique was investigated. The dependence of LAB formation frequency and LAB parameters on crystal growth conditions and impurity content was found. Impurity effects on LAB formation become apparent at concentrations of about 10¹⁸ cm⁻³. – All impurity investigated decreases the probability of LAB formation, the acceptor impurity influence is stronger. At B concentration exceeding 2 · 10¹⁹ cm⁻³ LAB formation does not occur. – Results are interpreted in terms of scheme of LAB formation in thermal stress field of growing crystal. To explain observed impurity effects assumptions about dislocation drag and about raising of critical stresses for dislocation generation with doping are made.     

Solutal convection around growing protein crystals and diffusional purification in Space

Convective and diffusional mass transport to an isolated crystal growing from solution, with slow linear interface kinetics, is considered analytically as a generic scaling model. We focus on the interface kinetics which is slow as compared to the diffusion mass transport which is typical of protein crystal growth. Independently, full-scale numerical solutions of transport equations around a cylindrical crystal, at the center of the bottom of a cylindrical cell filled with the solution, are found. The two approaches give results that agree over a wide range of parameters, providing dimensionless relationships that allow predictions of the contribution of convection and diffusion to mass transport. Requirements for microgravity level in Space experiments to achieve diffusional mass transport are estimated on the basis of these relationships. Coefficients of impurity distribution between a growing crystal and its solution, under the influences of convection and diffusion around the crystal, were numerically evaluated as functions of time. The results provide further support for the hypothesis concerning the role of the impurity depletion zone in the purification of a growing crystal. They also reveal that in general, the impurity distribution within the crystal is not homogeneous due to convection. The effects of various factors on growth kinetics and crystal purity are considered.     

Accumulated distribution of material gain at dislocation crystal growth

A model for slowing down the tangential growth rate of an elementary step at dislocation crystal growth is proposed based on the exponential law of impurity particle distribution over adsorption energy. It is established that the statistical distribution of material gain on structurally equivalent faces obeys the Erlang law. The Erlang distribution is proposed to be used to calculate the occurrence rates of morphological combinatorial types of polyhedra, presenting real simple crystallographic forms.     

Dislocations (Solitons) in anharmonic crystals

Static dislocations (solitons) in an anharmonic lattice are studied within the framework of the Frenkel-Kontorova model. The dislocation-induced fields corresponding to the displacement vector and the stress tensor are calculated, and their properties are analyzed. The process of soliton nucleation is discussed in terms of the kinetics of the excited phonon subsystem of a loaded crystal. The expressions describing the nucleation time and the force and the energy conditions of a dislocation (soliton) nucleation are derived.     

The Influence of Impurities on Crystallization Kinetics of Sodium Chloride

The influence of impurities on the crystallization kinetics of NaCl was investigated in a fluidized bed crystallizer. The growth and dissolution rates were related to the supersaturation and impurity concentrations. The effect of different impurities on the growth rate of NaCl crystals can be divided into thermodynamic effects where the impurities influence the solubility and kinetic effects where the impurities will suppress the growth rate compared to the pure NaCl. A mathematical model describing crystal growth rates from aqueous solution as a function of impurity concentration is presented. The model explains impurity concentration effects on the crystal growth rate in terms of an impurity effectiveness factor and a Langmuir adsorption isotherm for the impurity.     

Finite element analysis of dislocation density during bulk single crystal growth (effect of doping atoms in InP single crystal)

A computer code for simulation of dislocation density in a bulk single crystal during liquid encapsulated Czochralski (LEC) or Czochralski (CZ) growth process. In this computer code, the shape of crystal–melt interface and the temperature in a crystal at an arbitrary time were determined by linear interpolation of the results that were discretely obtained by heat conduction analysis of a CZ single crystal growth system. A dislocation kinetics model called Haasen–Sumino model was used as a constitutive equation. In this model, creep strain rate is related to dislocation density, and this model extended to multiaxial stress state was incorporated into a finite element elastic creep analysis program for axisymmetric bodies. Dislocation density simulations were performed using this computer code for InP bulk single crystals with about 8″ in diameter. In the analysis, the effect of dopant atoms on the dislocation density was examined. In the case of a low doped InP single crystal, dislocations are distributed in the whole of the crystal. On the other hand, in the case of a highly doped InP single crystal, dislocations are localized at both the central and peripheral regions of the crystal.     

Formation of dislocation structure in silicon layers on non-orienting substrates

A dislocation structure of Si layers crystallized from a floating grain on quartz glass and mullite ceramics substrates has been investigated by transmission electron microscopy (TEM) including the high-voltage one. The effect of the layer orientation on the crystallographic features of dislocation distribution and brittle fracture in Si-SiO₂ system has been considered. The dislocation structure is proved to form mainly at temperatures lower than 0.8 of absolute melting temperature (T_m) of Si. Dislocation sources are located inside the crystallizable layer, and they are dislocations appearing from grain as well as the dislocation bundles near the interface. The cross slip of screws plays an essential role in dislocation multiplication. The difference of thermal expansion coefficients of the layer and substrate determines the finite dislocation density near the interface and in the bulk of the layer.     

On the delay of thermally activated motion of pyramidal dislocations in zinc

The effect of shear stress and temperature on the delay time, t_i, of thermally activated motion of dislocations in the {112 2} 〈112 3〉 slip system in Zn single crystals is studied. The delay is associated with a higher density of crystal defects at the initial path of dislocation motion.     

Dislocation Structure and Strain Localisation in Nickel Single Crystals Cyclically Deformed at 77 K

An experimentally based investigation is presented of the dislocation structure and of glide effects occurring in single slip oriented nickel crystals cyclically deformed at 77 K until saturation of the stress amplitude. Special attention is paid to a comparison of slip and structure phenomena observed in fatigue tests at 77 K and those found after cycling at room temperature (RT) and elevated temperatures. At strain amplitudes within the plateau region of the cyclic stress‐strain curve, where at higher temperatures in the crystal two structure types co‐exist, at 77 K nearly the entire specimen volume is occupied by one structure “phase”, a dislocation‐“condensed” wall configuration. On different scale levels the main characteristics of this extended wall structure were found to be independent of the imposed amplitude, and they turned out to fit in the temperature dependence of the structure features of the ladder‐like wall phase characterising the zones of intense slip (persistent slip bands) at RT and elevated temperatures. At 77 K the strain is localised in narrow slip bands (SBs) in the same way as at higher temperatures, although there is no indication of a “two‐phase” structure. From the experimental findings it is concluded that WINTERs “two‐phase” model remains valid, when averaging the plastic strain values over all SBs and over a sufficient number of cycles.     

Electromagnetic emission under uniaxial compression of ice: II. Analysis of the relationship between an electromagnetic signal and the dynamics of charged dislocation pile-ups

The nature of the electrical activity of mesoscopic defects in I_h ice and the relationship of this activity with the kinetics of plastic deformation and fracture is discussed. The theoretical time dependences of the shear caused by active dislocation pile-ups are compared with the shapes of actual electromagnetic signals generated in different stages of the plastic deformation of I_h ice. Good agreement with the model of free expansion of a conservative dislocation pile-up and the model of nucleation and propagation of a slip band is established.     

On Unstable Directions of Dislocations in the Intermetallic Compound V3Si

The angular dependence of the reciprocal elastic energy of a straight dislocation in the superconductor V₃Si has been computed for different temperatures and slip systems taking elastic anisotropy into account. Regions of instability have been found which depend on temperature. Crystallographic slip planes may be unstable against climb.     

The catalytic effect of impurity. The effect of benzene, acetone, organic acids, iron, and chromium on growth of KH2PO4 and C8H5O4K crystals

The effect of benzene, acetone, acetic, formic, and oxalic acids, iron, and chromium on the growth kinetics of KH₂PO₄ and C₈H₅O₄ K crystal faces has been studied. It is found that low concentrations of organic impurities increase growth rates of some crystal faces (the so-called catalytic effect of impurity). This effect is rather weak in the case of organic acids, however, it is clearly seen in the presence of inorganic impurity (Fe³⁺). The analysis of two models of growth (dislocation-free and B + S) under the assumption that the main cause of the catalytic effect is a decrease in the step energy showed that the calculated and experimental data are consistent only under certain assumptions that should be additionally verified both theoretically and experimentally.     

Magnetoplastic effects in crystals in the context of spin-dependent chemical kinetics

Possible mechanisms of a number of magnetoplastic effects in magnetically disordered crystals are analyzed in the context of the chemical kinetics of reactions occurring in a system of structural defects upon plastic deformation. Particular attention is given to spin-dependent reactions between real-structure elements containing paramagnetic centers (dislocation cores, impurity centers, electronic excitations, and so on). It is shown that reactions of several types may occur between these elements, and, in some cases, the relative deformation rate can be related to the rate constants of intracrystalline spin-dependent reactions.     

Effect of Impurities on the Etching of Sodium Chloride Crystals

The results of a study of the effect of HgCl₂, ZnCl₂, PbCl₂ and CaCl₂ on the surface micro-morphology and kinetics of etching of {100} planes of NaCl crystals in methanol and ethanol are described and discussed. It was found that addition of an impurity to the solvent leads to the formation of contrasting dislocation etch pits, and that the overall dissolution rate in a solvent decreases with an increase in additive concentration. In the case of HgCl₂ impurity added to methanol terraced etch pits are observed, but their terracing behaviour diminishes with the increasing impurity concentration.