嵌入硅基多孔氧化铝中的荧光染料的发光性质研究

3种不同的荧光染料被分别嵌入硅基多孔氧化铝模板中,并且在室温下得到了蓝光、绿光和红光波长的荧光发射.实验中同时观测到上述荧光光谱的蓝移现象.研究结果表明,荧光染料沉积在不同的模板(如硅基多孔氧化铝、多孔硅)中,其相互作用的机理是不同的.模板发光机制的差异将直接影响荧光染料的发光性质.     

多孔阳极氧化铝膜的制备研究

在直流恒压下,在不同的酸性溶液中对铝片实施两步阳极氧化制备多孔氧化铝膜,在磷酸溶液中制得的模板孔径大,并且电解时间缩短,加快了制备模板的过程。同时利用阳极氧化初期电流密度的变化,分析了多孔氧化铝膜的形成机理。     

硅基多孔氧化铝膜的AES多层结构分析和生长过程研究

将电子束蒸发在硅衬底（Ｐ型，〈１００〉晶向，０－５ Ω·ｃｍ） 上厚度４００ ｎｍ 、纯度９９－９９ ％的铝膜，浸入具有中等溶解能力的１５ ｗｔ％ Ｈ２ＳＯ４ 中，ＤＣ恒压６０ Ｖ、恒温０ ℃条件下，进行多孔型过度阳极氧化处理，从而在Ｓｉ 基上得到包含空隙层的多孔氧化铝膜．通过对样品ＴＥＭ 平面形貌、ＳＥＭ 横断面形貌观察以及ＡＥＳ深度剖析，研究了样品的多层结构，并初步讨论了由此揭示出的硅基多孔氧化铝膜的生长过程     

多孔硅镶嵌正丁胺/激光染料复合膜的荧光谱

多孔介质染料镶嵌膜有可能是发展固体染料激光器的一种途径[1].由于其所具有的微孔结构和大的比表面积,故使其成为激光染料理想的载体,以形成多孔硅基发光材料[2].　　我们用正丁胺作碳源,采用射频辉光(ＲＦ)放电法制备碳膜.利用正丁胺、Ｒ6Ｇ/聚乙二醇分别作碳源和蒸发源得到一种混合膜,如将其沉积在刚制备的新鲜多孔硅上则得到多孔硅镶嵌复合膜.本文着重研究了镶嵌于多孔硅中的正丁胺/Ｒ6Ｇ的荧光光谱,并考察了多孔硅衬底的改变对多孔硅镶嵌膜发光的影响.1　样品制备　　(1)多孔硅的制备　制备多孔硅(ＰＳ)所用的材料为(100)晶向的ｐ型单…     

硅基超薄多孔氧化铝膜的制备

将二次阳极氧化法应用于硅基铝膜的制备, 在草酸溶液中得到了厚度可控的硅基超薄多孔氧化铝膜(PAM), 厚度小于100 nm. 实验中记录了氧化电流随时间的实时变化曲线, 发现硅衬底的氧化电流在大幅下降前有一小幅波动. 对应于Al/Si界面的氧化过程中, 孔洞底部之间的残留铝岛被优先氧化, 可将此作为终止铝氧化的标志. 扫描电镜(SEM)观察表明, 二次氧化提高了孔洞分布的均匀性, 使得孔在一定的区域内呈现有序六角分布.这种模板可进一步用于硅基纳米器件和纳米结构的制备.     

多孔硅制备条件对其电致发光特性的影响

应用蒸镀-阳极氧化法制备结构为ITO/PS/p-S i/A l的多孔硅电致发光器件,在7.5V电压下实现了数小时连续电致发光.实验表明,多孔硅电致发光峰位会随着阳极氧化电流密度的增大、腐蚀时间的延长以及HF酸浓度的降低而蓝移.欲制备工作电压较低、发光时间较长、发光效率较高的电致发光样品,则多孔硅制备时的阳极氧化应使用较低电流密度和较短的腐蚀时间.     

二次阳极氧化方法制备有序多孔氧化铝膜

通过二次阳极氧化方法制备多孔氧化铝膜与一次阳极氧化方法制备多孔氧化铝膜孔排布规律性的对比,结果发现,二次阳极氧化方法制取的多孔氧化铝膜孔排布规律性明显好于一次阳极氧化法制取的多孔膜.在几个微米范围内,孔呈理想的六角排布.去除一次阳极氧化膜后,二次阳极氧化得以在更良好的表面进行,制取的氧化铝膜孔规律性和有序度更高.有序区域的尺寸与晶粒内的亚晶大小有一定关系.     

脉冲阳极氧化条件对多孔硅法布里-珀罗干涉特性影响

采用电化学脉冲阳极氧化法制备具有干涉效应的多孔硅. 研究电流密度、有效阳极氧化时间、电解液组成对多孔硅法布里-珀罗(F-P)干涉特性的影响, 利用光纤光谱仪测量多孔硅反射光谱并计算其光学厚度. 结果表明, 当阳极氧化电流密度78 mA•cm－2、有效阳极氧化时间5 min、氢氟酸与乙醇体积比VHF∶VEtOH＝2∶1时, 制备的多孔硅法布里-珀罗干涉条纹均匀, 膜层性质稳定; 当与饱和乙醇气体接触时, 多孔硅反射光谱吸收峰位由612红移到637 nm, 光学厚度由5864增加到6296 nm, 表明利用多孔硅法布里-珀罗干涉效应检测乙醇气体思路是可行的.     

多孔硅表面性质导致电致发光的进一步论证

用荧光分光光度法现场监测多孔硅在阳极偏压下于溶液中的电致发光行为 ,该电致发光行为主要取决于多孔硅本身的表面性质 .将电致发光实验后的多孔硅样品再次电解 ,并再次进行电致发光实验 ,发现其发光性能明显改善 ;实验表明 ,多孔硅在阳极偏压下的液相电致发光机制是由表面的Si_H键氧化向导带注入电子 ,并与阳极偏压注入的价带空穴进行复合而发光 ;此外 ,还发现了多孔硅于溶液中在阳极偏压下电压调制的可见光发射行为 ,并以量子限制效应对该现象进行了解释     

恒电位电解法制备光致发光掺钬多孔硅

研究了一种新的多孔硅掺稀土的电化学方法———恒电位电解，以及稀土硝酸盐支持电解质有机溶剂的新电解体系。这一方法和体系的特点是通过采用适当外加电压来控制电解产物，提高掺入的稀土浓度，提高发光强度，同时避免生成导致发光不稳定的产物，提高发光稳定性。优化了阳极氧化制备多孔硅的条件和阴极还原制备掺钬多孔硅的条件（钬化合物浓度、溶剂、离子强度、电解电压、时间），获得光致发光强度高于多孔硅的掺钬多孔硅。对多孔硅和掺钬多孔硅的光致发光机制进行了讨论。     

纳米孔阵列阳极氧化铝膜的制备和表征

本文通过在0℃、0.5mol·L^-1的草酸溶液中阳极氧化高纯铝片的方法制得了阳极氧化铝(AAO)膜，并用扫描电子显微镜(SEM)和原子力显微镜(AFM)对AAO膜的形貌和结构进行了表征。结果表明，阻挡层AAO膜中大小一致的膜胞在铝/氧化铝界面上排成六方形阵列;有孔层AAO膜中含有高度有序的纳米孔阵列和膜胞阵列，并且孔的直径和膜胞的尺寸都具有较窄的分布。另外，考察了阳极氧化电压对膜胞尺寸、孔径大小、孔密度和膜胞密度的影响，表明在一定的电压范围内，膜胞和孔径都随电压的升高而增大，而孔密度和膜胞密度却随电压的升高而减小。     

交流电在Al_2O_3模板中沉积金属机理探讨

以铝阳极氧化形成有序的多孔氧化铝为模板,利用交流电在模板孔洞中沉积金属Ag得到纳米Ag粒子/Al2O3组装体系,透射电镜观察证实在氧化铝模板中有金属纳米Ag粒子存在.分析了交流电能在孔洞中沉积金属的原因是由于Al/Al2O3界面的整流特性,测量了Al/Al2O3界面的I－U关系曲线.     

交流电在Al2O3模板中沉积金属机理探讨

以铝阳极氧化形成有序的多孔氧化铝为模板,利用交流电在模板孔洞中沉积金属Ag得到纳米Ag粒子/Al2O3组装体系,透射电镜观察证实在氧化铝模板中有金属纳米Ag粒子存在.分析了交流电能在孔洞中沉积金属的原因是由于Al/Al2O3界面的整流特性,测量了Al/Al2O3界面的I－U关系曲线.     

Photocatalysts of Cr Doped TiO2 Film Prepared by Micro Arc Oxidation

A series of Cr doped TiO2 films were prepared by micro arc oxidation (MAO) using an electrolyte of Na3PO4+K2Cr2O7. X-ray diffraction and scanning electron microscopy revealed that the films mainly consisted of anatase phase with a porous surface morphology. The films have an excellent photocatalytic effect for degradation of methylene blue and decomposition of water under visible light illumination. This arises from the formation of Cr3+/Cr4+ and oxygen vacancy energy levels owing to Cr doping. The former reduces the electron-hole recombination chance, while the latter generates a new gap between the conduction band (CB) and valence band (VB) of TiO2, which lowers the photo energy of the excited electron in the VB to the oxygen vacancy states. The mechanisms for film synthesis during the MAO process are also presented.     

溶胶-凝胶法制备多孔晶体材料C12A7-Cl-

利用溶胶-凝胶法制备了多孔晶体材料C12A7-Cl- (Ca12Al14O32Cl2), 制备凝胶的原料是四水合硝酸钙、九水合硝酸铝、氯化钙、尿素和乙二醇. 混合溶液经过搅拌2-3 h形成溶胶, 再经350 ℃热处理后形成凝胶体, 最终在流动氩气气氛中1000 ℃烧结后得到材料. 用X射线衍射, 场发射扫描电子显微镜, 热重分析, 电子顺磁共振和离子色谱等方法表征合成的C12A7-Cl-多孔晶体材料. 结果表明, 利用溶胶-凝胶法成功地生成了C12A7 结构, 氯负离子是材料中存储的主要负离子. 此外, 从C12A7-Cl-晶体材料表面发射的氯负离子也被飞行时间质谱观测到. 上述结果说明溶胶-凝胶法可被用于制备C12A7-Cl-晶体材料.     

TiO2微粒功能化多孔Al2O3膜的光电化学研究

用恒电位法制备了多孔Al2O3薄膜,通过在Al2O3薄膜孔内水蒸汽水解钛酸异丙酯生成了锐钛矿型TiO2微粒,制备出了Al2O3与TiO2微粒的复合薄膜．用XRD,SEM,光电化学方法进行了研究．实验表明：该复合薄膜具有光电转换特性,在光催化、光电化学太阳能转换中具有应用价值．     

NaGdF4:Eu3+/AAO薄膜的制备与表征

采用水热法在多孔阳极氧化铝(AAO)模板上制备了NaGdF<,4>:Eu<'3+>(摩尔分数5.0%)/AAO薄膜,并研究了制备方法、溶液浓度和退火温度对薄膜样品形貌、结构和发光性质的影响.XRD结果表明,在低于500 ℃退火,得到具有NaGdF<,4>六方相结构的NaGdF<,4>:Eu<'3+>/AAO薄膜;而在5...     

Effect of anodizing conditions on the cell morphology of anodic films on AA2024-T3 alloy

The effects of applied current density, anodizing time, and electrolyte temperature on the cell and pore morphology of anodic films and the voltage-time response obtained during galvanostatic anodizing of AA2024-T3 alloy in sulphuric acid electrolytes have been studied. Scanning electron microscopy was employed to observe the film morphology. Sponge-like porous structure was promoted by anodizing at relatively low current density and high electrolyte temperature. In contrast, linear porous structure was favoured under the converse conditions. Intermediate conditions resulted in films containing either sequential layers of the 2 morphologies or a morphology incorporating features of the 2 types; such conditions were associated with anodizing voltages in the range 25 to 35 V. The reasons for the morphological differences are proposed to be due to interactions between film growth stresses and stresses arising from oxygen evolution on the development of the alumina cells.     

Behavior of acid species during heat treatment and re-anodizing of porous alumina films formed in malonic acid

In the present work infrared spectroscopy, photoluminescence spectral measurements and the potenthiodynamic technique for studying the effect of treatment temperature on compositional and electronic properties of malonic acid alumina films were used. In the course of our studies, it has been proven that heat treatment of malonic acid films at temperatures from 250 up to 400 °C leads to considerable changes in the photoluminescence properties and voltammetric response during their potentiodynamic re-anodizing. We suggest that defects, such as electron traps, in this type of porous anodic films are caused by the atoms of hydrogen (one or two) escaping from the CH₂ groups of the malonic acid species as a result of the heat treatment. The sites of such defects provide pathways for easy electron migration under a high electric field increasing electroconductivity of anodic alumina films. On the contrary, no structural defects responsible for enhanced electroconductivity are observed during thermal splitting of oxalate groups in the oxalic acid alumina films.     

Synthesis and characterization of ZnO nanowires by thermal oxidation of Zn thin films at various temperatures

In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and photoluminescence (PL) measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002), and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. SEM results indicate that by increasing the oxidation temperature, the dimensions of the ZnO nanowires increase. The optimum temperature for synthesizing high density, ZnO nanowires was determined to be 600 °C. EDX results revealed that only Zn and O are present in the samples, indicating a pure ZnO composition. The PL spectra of as-synthesized nanowires exhibited a strong UV emission and a relatively weak green emission.