Diamagnetism of microcavity polaritons induced by spin-dependent polariton–polariton interactions

Diamagnetism of condensed microcavity polaritons in a vertically applied magnetic field is theoretically studied by using the density of free energy of polaritons. The magnetic dependence of polariton–polariton interactions and spin polarization degree of polaritons are derived, and are used to show the diamagnetic behavior of the polariton spin polarization, which is discussed for GaAs-based microcavities. We show that for strong magnetic field the spin polarization of the polaritons is paramagnetic as usual, while around positive exciton–photon detuning and special Rabi splitting, the spin polarization of the polaritons could be diamagnetic. In addition, weak magnetic field and high polariton density are beneficial to observe the polariton diamagnetism.     

ODMR Study of Zn1−x Mn x Se/Zn1−y Be y Se and (Cd1−x ,Mn)Te/Cd1−y Mg y Te Diluted Magnetic Semiconductor Quantum Wells

The effects of microwave pumping with a frequency of 60 GHz on the magneto-optical properties of diluted magnetic semiconductors (DMSs) are studied in (Zn,Mn)Se/(Zn,Be)Se and (Cd,Mn)Te/(Cd,Mg)Te quantum wells. Resonant heating of the Mn²⁺ ions in the electron spin resonance conditions leads to an increase in the Mn-spin temperature, which exceeds the bath temperature by up to 5.2 K, as detected by the shift of exciton emission line and decrease of its integral intensity. Nonresonant heating mediated by free carriers is also observed through variation of the polarization degree of emission. Direct measurements of spin–lattice relaxation times for both materials using time-resolved optically detected magnetic resonance (ODMR) technique have been performed. The mechanisms of ODMR in nanostructures of DMSs are discussed.     

Motional-narrowing-type dephasing of electron and hole spins of itinerant excitons in magnetically doped II-VI bulk semiconductors

Time-resolved optical spin-quantum-beat measurements performed on magnetically doped II-VI bulk semiconductors reveal an increase of the electron spin dephasing time with rising temperature typical for motional narrowing. With the dephasing being notably faster than in undoped II-VI semiconductors, the magnetic dopants must play a key role, modifying the known dephasing mechanisms and introducing new ones. Focusing on the latter, we theoretically explore the spin dephasing channel arising from magnetization fluctuations sampled by the itinerant excitons. This mechanism suffices to explain quantitatively the results of our time-resolved Faraday-rotation experiments on optically excited Cd(1-x)Mn(x)Te which we present here as a function of magnetic field, temperature and manganese dopant density. In addition to electron spin-quantum beats, some of our experiments reveal hole spin beats as well.     

Magnetoplasticity and magnetic memory in diamagnetic solids

A mechanism for the depinning of dislocations pinned by a stopper is formulated. This mechanism includes the transfer of an electron from a dislocation to the stopper and the appearance of a spin two-electron nanoreactor that has no Coulomb interaction that would hold the dislocation at the stopper in the initial state. The spin dynamics in the nanoreactor is controlled by a magnetic field; therefore, it causes magnetoplasticity and short-term magnetic memory. Another origin of magnetoplasticity is the aggregation of diffusing paramagnetic ions (stoppers) into dimers, trimers, and clusters; this aggregation is also spin-selective and magnetically sensitive. The magnetic-field dependence of the structural evolution of the stoppers provides long-term magnetic memory in diamagnetic solids. Both mechanisms of magnetoplasticity and magnetic memory can coexist and be independent of or dependent on each other.     

High-Density Excitons in a Diluted Magnetic Semiconductor: Cd 1 − x Mn x Te

Time-resolved magneto photoluminescence in a diluted magnetic semiconductor Cd 0.9 Mn 0.1 Te has been carried out with varying exciton density from 10 14 to 10 19 cm m 3 . The reduction of the Zeeman shift and that of the magnetic polaron energy was found under strong photoexcitation. The spectral feature is interpreted in terms of the heating of the manganese spin subsystem. Polarization dependence of the spin heating is observed for the first time, revealing the contribution of the spin flip between excitons and magnetic ions to the heating process.     

高组分稀磁半导体Cd1-xMnxTe/CdTe超晶格的荧光谱研究

报道用分子束外延(MBE)技术生长的x=0.4,0.8的高组分稀磁半导体Cd1-xMnxTe/CdTe超晶格低温和室温荧光谱研究结果.基态激子跃迁能级荧光谱实验结果显示高组分超晶格中具有高量子效率和高质量光发射.对激子能级随温度的变化进行了详细研究,给出激子跃迁能量的温度系数.激子能级线型的展宽随温度变化关系可用激子-纵向光学声子耦合模型解释.与光调制反射谱实验结果进行了比较.     

The (29)Si T(1) and T(2) NMR relaxation in porous paramagnetic material SiO(2)-MnO-Al(2)O(3)

The (29)Si spin-lattice relaxation in porous silica-based material 1, doped by ions Mn(2+) at a Si/Mn ratio of 3.5, is non-exponential, independent of magic-angle spinning (MAS) rates and governed by direct dipolar coupling between electron and nucleus where an electron relaxation time is estimated to be about 10(-8)s. In the absence of mutual energy-conserving spin flips (spin diffusion) in 1, the (29)Si T(2) time increases linearly with spinning rates. None was observed in diamagnetic porous system 2. The unexpected (29)Si T(2) dependence has been interpreted in terms of the large bulk magnetic susceptibility (BMS) effects. It has been shown that editing the (29)Si Hahn-echo MAS NMR spectra eliminates wide lines, belonging to (29)Si nuclei in the proximity of paramagnetic centers, and reduces the BMS broadenings in sideband patterns for nuclei remote from these centers.     

二维带电自旋-1/2费米气体的磁性质

通过引入描述电荷-磁场和自旋-磁场相互作用竞争关系的自旋因子,研究了磁场和简谐势阱双重约束的二维带电自旋-1/2费米气体的磁性质.结果表明,当自旋因子很小时,系统显示出抗磁性,随着自旋因子的进一步增大,系统逐渐转变为顺磁性.自旋因子的临界值将磁化强度划分为抗磁性区和顺磁性区,临界值随磁场和温度的增大仅发生微小的改变.     

Bound states in optical absorption of semiconductor quantum wells containing a two-dimensional electron Gas

The dependence of the optical absorption spectrum of a semiconductor quantum well on two-dimensional electron concentration n(e) is studied using CdTe samples. The trion peak (X-) seen at low n(e) evolves smoothly into the Fermi edge singularity at high n(e). The exciton peak (X) moves off to high energy, weakens, and disappears. The X,X- splitting is linear in n(e) and closely equal to the Fermi energy plus the trion binding energy. For Cd0.998Mn0.002Te quantum wells in a magnetic field, the X,X- splitting reflects unequal Fermi energies for M = +/-1/2 electrons. The data are explained by Hawrylak's theory of the many-body optical response including spin effects.     

Exciton Spectroscopy of Semiconductors by the Method of Optical Harmonics Generation (Review)

Nonlinear optical phenomena are widely used for the study of semiconductor materials. The paper presents an overview of experimental and theoretical studies of excitons by the method of optical second and third harmonics generation in various bulk semiconductors (GaAs, CdTe, ZnSe, ZnO, Cu₂O, (Cd,Mn)Te, EuTe, EuSe), and low-dimensional heterostructures ZnSe/BeTe. Particular attention is paid to the role of external electric and magnetic fields that modify the exciton states and induce new mechanisms of optical harmonics generation. Microscopic mechanisms of harmonics generation based on the Stark effect, the spin and orbital Zeeman effects, and on the magneto-Stark effect specific for excitons moving in an external magnetic field are considered. This approach makes it possible to study the properties of excitons and to obtain new information on their energy and spin structure that is not available when the excitons are investigated by linear optical spectroscopy. As a result of these studies, a large amount of information was obtained, which allows us to conclude on the establishing of a new field of research—exciton spectroscopy by the method of optical harmonics generation.     

From spin flip excitations to the spin susceptibility enhancement of a two-dimensional electron gas

The g-factor enhancement of the spin-polarized two-dimensional electron gas was measured directly over a wide range of spin polarizations, using spin flip resonant Raman scattering spectroscopy on two-dimensional electron gases embedded in Cd(1-x)Mn(x)Te semimagnetic quantum wells. At zero Raman transferred momentum, the single-particle spin flip excitation, energy Z*, coexists in the Raman spectrum with the spin flip wave of energy Z, the bare giant Zeeman splitting. We compare the measured g-factor enhancement with recent spin-susceptibility enhancement theories and deduce the spin-polarization dependence of the mass renormalization.     

Spin relaxation of Mn ions in (CdMn)Te/(CdMg)Te quantum wells under picosecond optical pumping

Spin relaxation of Mn ions in a Cd_0.97Mn_0.03Te/Cd_0.75Mg_0.25Te quantum well with photogenerated quasi-two-dimensional electron-hole plasma at liquid helium temperatures in an external magnetic field has been investigated. Heating of Mn ions by photogenerated carriers due to spin and energy exchange between the hot electron-hole plasma and Mn ions through direct sd-interaction between electron and Mn spins has been detected. This process has a short characteristic time of about 4 ns, which leads to appreciable heating of the Mn spin subsystem in about 0.5 ns. Even under uniform excitation of a dense electron-hole plasma, the Mn heating is spatially nonuniform, and leads to formation of spin domains in the quantum well magnetic subsystem. The relaxation time of spin domains after pulsed excitation is measured to be about 70 ns. Energy relaxation of excitons in the random exchange potential due to spin domains results from exciton diffusion in magnetic field B=14 T with a characteristic time of 1 to 4 ns. The relaxation time decreases with decreasing optical pump power, which indicates smaller dimensions of spin domains. In weak magnetic fields (_B=2 T) a slow down in the exciton diffusion to 15 ns has been detected. This slow down is due to exciton binding to neutral donors (formation of bound excitons) and smaller spin domain amplitudes in low magnetic fields. The optically determined spin-lattice relaxation time of Mn ions in a magnetic field of 14 T is 270±10 and 16±7 ns for Mn concentrations of 3% and 12%, respectively. Zh. éksp. Teor. Fiz. 112, 1440–1463 (October 1997)     

The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures

We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band offset based on the experimental data, we found that the spin current densities strongly depend on the Mn concentration. The magnitude as well as the sign of the electron-spin polarization and the tunnel magnetoresistance can be tuned by varying the Mn concentration, the width of the paramagnetic layer, and the external magnetic field. By an appropriate choice of the Mn concentration and the width of the paramagnetic layer, the degree of spin polarization for the output current can reach 100% and the device can be used as a spin filter.     

The magnetotransport properties of the intermetallic compound GdCu6

We have studied the temperature and magnetic field dependence of the electrical resistivity of GdCu(6) and have co-related the results with the temperature dependence of heat capacity and magnetization. The magnetoresistance of GdCu(6) is found to be positive both in the paramagnetic and antiferromagnetic regimes. Within the antiferromagnetic regime, the magnetoresistance is very high and increases to still higher values both with increasing field and decreasing temperature. In the paramagnetic regime the magnetoresistance continues to exhibit a finite positive value up to temperatures much higher than that corresponding to the antiferromagnetic to paramagnetic phase transition. We have shown through quantitative analysis that both the temperature dependences of resistivity and heat capacity indicate the presence of spin fluctuations within the paramagnetic regime of GdCu(6). The field dependence of electrical resistivity indicates that the positive magnetoresistance in the paramagnetic phase is not related to the orbital motion of the conduction electrons in a magnetic field (the Kohler rule). In contrast, our analysis indicates that these spin fluctuations are responsible for the positive magnetoresistance observed within this paramagnetic regime. The nature of the field dependence of electrical resistivity is found to be qualitatively similar both in the antiferromagnetic and paramagnetic regimes, which probably indicates that spin fluctuations in the paramagnetic regime are of the antiferromagnetic type.     

Third-Order Magnetic Susceptibility of an Ideal Fermi Gas

At low temperature and under weak magnetic field, non-interacting Fermi gases reveal both Pauli paramagnetism and Landau diamagnetism, and the magnitude of the diamagnetic susceptibility is 1/3 of that of the paramagnetic one. When the temperature is finite and the magnetic field is also finite, we demonstrate that the paramagnetism and diamagnetism start to deviate from the ratio 1/3. For understanding the magnetic properties of an ideal Fermi gas at quite low temperature and under quite weak magnetic field, we work out explicitly the third-order magnetic susceptibility in three cases, from intrinsic spin, orbital motion and in total. An interesting property is in third-order magnetic susceptibilities:when viewing individually, they are both diamagnetic, but in total it is paramagnetic.     

Optical spin orientation of a single manganese atom in a quantum dot

The magnetic state of a single magnetic atom (Mn) embedded in an individual semiconductor quantum dot is optically probed using micro-spectroscopy. A high degree of spin polarization can be achieved for an individual Mn atom localized in a quantum dot using quasi-resonant or fully-resonant optical excitation at zero magnetic field. Optically created spin polarized carriers generate an energy splitting of the Mn spin and enable magnetic moment orientation controlled by the photon helicity and energy. The dynamics and the magnetic field dependence of the optical pumping mechanism shows that the spin lifetime of an isolated Mn atom at zero magnetic field is controlled by a magnetic anisotropy induced by the built-in strain in the quantum dots. The Mn spin distribution prepared by optical pumping is fully conserved for a few microseconds. This opens the way to full optical control of the spin state of an individual magnetic atom in a solid state environment.     

Aggregation of ferromagnetic and paramagnetic atoms at edges of graphenes and graphite

In this work we report that when ferromagnetic metals (Fe,Co and Ni) are thermally evaporated onto n-layer graphenes and graphite,a metal nanowire and adjacent nanogaps can be found along the edges regardless of its zigzag or armchair structure.Similar features can also be observed for paramagnetic metals,such as Mn,Al and Pd.Meanwhile,metal nanowires and adjacent nanogaps cannot be found for diamagnetic metals (Au and Ag).An external magnetic field during the evaporation of metals can make these unique features disappear for ferromagnetic and paramagnetic metal;and the morphologies of diamagnetic metal do not change after the application of an external magnetic field.We discuss the possible reasons for these novel and interesting results,which include possible one-dimensional ferromagnets along the edge and edge-related binding energy.     

Discovery of a self-trapped-electron center in α-TeO 2

Electron spin resonance (ESR) studies show that electron irradiation of an f -TeO 2 single crystal followed by 330-nm UV illumination at ～10 v K generates a new spin-1/2 paramagnetic center having C 2 symmetry, like the Te lattice sites, that is attributed to a self-trapped charge on a Te. Identification is facilitated by a strong hyperfine interaction with 125 Te at a central Te site and weaker 125 Te superhyperfine interactions with three different equivalent pairs of neighboring Te cations. The irradiations also produce the diamagnetic V_{O}^{\times} center and the paramagnetic V_{O}^{\bullet} and V_{O}^{\prime} centers. From measurements of concentration changes of the paramagnetic centers due to thermal annealing of the new center it is deduced that the self-trapped charge is a self-trapped electron. It is designated as a \hbox{TeO}_{2}^{\prime} center. This assignment is consistent with its low thermal stability since it anneals quickly at temperatures above 40 v K. ESR characteristics of this new center are described.     

Contribution of spin-orbit interaction to the magnetic susceptibility of interacting electrons in metals

The effect of spin-orbit interaction on the magnetic susceptibility of metals has been investigated using a pseudopotential formalism. The orbital spin and spin-orbit contributions to the magnetic susceptibility of Zn and Cd have been calculated. An important feature is that the spin-orbit contribution is diamagnetic and is of the same order of magnitude as orbital contribution in the case of Zn and Cd.