Dopant-induced nanoscale electronic inhomogeneities in Ca(2-x)Sr(x)RuO4

Ca(2-x)Sr(x)RuO4 single crystals with 0.1 < or = x < or = 2.0 have been studied systematically using scanning tunneling microscopy (STM) and spectroscopy, low-energy electron diffraction, and angle resolved photoelectron spectroscopy (ARPES). In contrast with the well-ordered lattice structure, the local density of states at the surface clearly shows a strong doping dependent nanoscale electronic inhomogeneity, regardless of the fact of isovalent substitution. Remarkably, the surface electronic roughness measured by STM and the inverse spectral weight of quasiparticle states determined by ARPES are found to vary with x in the same manner as the bulk in-plane residual resistivity, following the Nordheim rule. For the first time, the surface measurements--especially those with STM--are shown to be in good agreement with the bulk transport results, all clearly indicating a doping-induced electronic disorder in the system.     

Bridging charge-orbital ordering and Fermi surface instabilities in half-doped single-layered manganite La(0.5)Sr(1.5)MnO₄

The single-layered half-doped manganite La(0.5)Sr(1.5)MnO? (LSMO), was studied by means of the angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and resistivity measurements. STM revealed a smooth reconstruction-free surface; the density of states, extracted from photoemission and tunneling spectroscopy, is in agreement with transport measurements. The derived from ARPES Fermi surface (FS) nesting properties correspond to the known pattern of the charge-orbital ordering (COO), which implies that FS instability is related to the propensity to form a COO state in LSMO.     

Effect of quasiparticle spectral weight and consistency of energy gaps obtained from STM and ARPES spectra for underdoped superconductor Bi2Sr2CaCu2O8 + δ

By comparing the recently obtained superconducting energy gaps from the scanning tunneling microscopy (STM) and the angle-resolved photoemission spectroscopy (ARPES) for underdoped superconductor Bi₂Sr₂CaCu₂O_8 + δ, significant distinctions were observed. By properly taking the effect of quasiparticle spectral weight in the STM spectra into account, good consistency between both energy gaps obtained by STM and ARPES is unveiled.     

Giant alkali-metal-induced lattice relaxation as the driving force of the insulating phase of alkali-metal/Si(111):B

Ab initio density-functional theory calculations, photoemission spectroscopy (PES), scanning tunneling microscopy, and spectroscopy (STM, STS) have been used to solve the 2sqrt[3]×2sqrt[3]R30 surface reconstruction observed previously by LEED on 0.5 ML K/Si:B. A large K-induced vertical lattice relaxation occurring only for 3/4 of Si adatoms is shown to quantitatively explain both the chemical shift of 1.14 eV and the ratio 1/3 measured on the two distinct B 1s core levels. A gap is observed between valence and conduction surface bands by ARPES and STS which is shown to have mainly a Si-B character. Finally, the calculated STM images agree with our experimental results. This work solves the controversy about the origin of the insulating ground state of alkali-metal/Si(111):B semiconducting interfaces which were believed previously to be related to many-body effects.     

Hydrogen-induced metallization on Ge(1 1 1) c(2 × 8)

We have studied hydrogen adsorption on the Ge(1 1 1) c(2 × 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 × 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states.     

High quality PdTe_2 thin films grown by molecular beam epitaxy

PdTe_2,a member of layered transition metal dichalcogenides(TMDs),has aroused significant research interest due to the coexistence of superconductivity and type-II Dirac fermions.It provides a promising platform to explore the interplay between superconducting quasiparticles and Dirac fermions.Moreover,PdTe_2 has also been used as a substrate for monolayer antimonene growth.Here in this paper,we report the epitaxial growth of high quality PdTe_2 films on bilayer graphene/SiC(0001)by molecular beam epitaxy(MBE).Atomically thin films are characterized by scanning tunneling microscopy(STM),X-ray photoemission spectroscopy(XPS),low-energy electron diffraction(LEED),and Raman spectroscopy.The band structure of 6-layer PdTe_2 film is measured by angle-resolved photoemission spectroscopy(ARPES).Moreover,our air exposure experiments show excellent chemical stability of epitaxial PdTe_2 film.High-quality PdTe_2 films provide opportunities to build antimonene/PdTe_2 heterostructure in ultrahigh vacuum for future applications in electronic and optoelectronic nanodevices.     

Electronic stabilization of the Si(111)5 × 2-Au surface: Pb and Si adatoms

Using scanning tunneling microscopy/spectroscopy (STM/STS), angle resolved photoemission spectroscopy (ARPES) and first-principles density functional theory (DFT), we study the structural and the electronic properties of the Si(111)5 × 2-Au surface decorated with Pb adatoms. The STM topography data reveal that Pb adatoms form a similar superstructure to that observed in the case of Si adatoms on a bare Si(111)5 × 2-Au surface. The DFT calculations show that preferential adsorption sites of Pb atoms are located near the double Au chain. Bias dependent STM topography and spectroscopy together with the DFT calculations allow us to distinguish Pb from Si adatoms. Both the Si and Pb adatoms modify the electronic properties in the same way, which confirms the electronic origin of the stabilization of the surface.     

FOURIER ANALYSIS OF TEMPORAL AND SPATIAL OSCILLATIONS OF TUNNELING CURRENT IN SCANNING TUNNELING MICROSCOPY

Partially oxidized Si(111) surfaces and surfaces of highly oriented pyrolytic graphite (HOPG) were studied by two different ultrahigh vacuum scanning tunneling microscope (UHV-STM) systems and by an STM system working under ambient conditions, respectively. The STM current images of partially oxidized Si(111) surfaces and HOPG surfaces were analyzed by one/two-dimensional fast Fourier transformation (1D-FFT/2D-FFT). The phenomenon of temporal oscillations of tunneling current on the partially oxidized Si(111) surfaces was detected with both UHV-STM systems. Temporal as well as spatial oscillations of tunneling current appeared in highly resolved STM current images of the Si(111) surfaces simultaneously, but both kinds of oscillations could be discriminated according to their different influence on the 2D-FFT spectra of the current images, while varying the scanning range and rate. On clean HOPG surfaces only spatial oscillations of tunneling current induced by the surface structure were observed.     

Image charge effect on the light emission of rutile TiO_2(110) induced by a scanning tunneling microscope

The plasmon-enhanced light emission of rutile TiO_2(110) surface has been investigated by a low-temperature scanning tunneling microscope(STM). We found that the photon emission arises from the inelastic electron tunneling between the STM tip and the conduction band or defect states of TiO_2(110). In contrast to the Au(111) surface, the maximum photon energy as a function of the bias voltage clearly deviates from the linear scaling behavior, suggesting the non-negligible effect of the STM tip on the band structure of TiO_2. By performing differential conductance( dI/dV) measurements, it was revealed that such a deviation is not related to the tip-induced band bending, but is attributed to the image charge effect of the metal tip, which significantly shifts the band edges of the TiO_2(110) towards the Femi level(E_F) during the tunneling process. This work not only sheds new lights onto the understanding of plasmon-enhanced light emission of semiconductor surfaces, but also opens up a new avenue for engineering the plasmon-mediated interfacial charge transfer in molecular and semiconducting materials.     

Quantum oscillations in Pb/Si (111) heterostructure system

This paper summarizes our recent work on the study of quantum size effects (QSE) and novel physical properties of the Pb/Si (111) heterostructure. Two different types of samples were investigated. One is wedge-shaped Pb islands, and the other is atomically flat Pb thin films. With scanning tunneling microscopy (STM) manipulation, we observed an intriguing morphology dynamics of the islands that swings between two extreme energy states, like that in a classical pendulum. We show that the dynamics is a result of the competition between the QSE and the classical step free energy minimizing effect. For the second type of the samples, the QSE is studied in terms of thickness-dependent film stability, electronic structure and physical properties by using STM, angle-resolved photoemission spectroscopy (ARPES) and transport measurement. The results consistently reveal the formation of quantum well states (QWS) due to electron confinement in the films. This size effect could greatly modify the electronic structure near the Fermi level and lead to quantum oscillations in superconductivity, electron-phonon coupling and thermal expansion. The work unambiguously demonstrates the possibility of quantum engineering of physical properties of thin films by exploiting well-controlled and thickness-dependent QSE.     

Identifying the electronic properties of the Ge(111)-(2×1) surface by low-temperature scanning tunneling microscopy

We present the results of our low-temperature scanning tunneling microscopy (STM) investigation of the clean Ge(111) surface. Our experiments enable, for the first time, STM observation of one-dimensional surface screening around surface defects. We identify the dominating role of surface states in the low-temperature STM imaging as well as the important influence of nonequilibrium kinetics on the measured tunneling spectra.     

铁氧化物中电子隧道现象的扫描隧道显微术研究

报道了利用扫描隧道显微术(STM)对金属表面氧化物层进行电子隧道谱研究的结果。在对两类铁晶体表面氧化层进行的隧道谱和势垒高度测量结果进行分析后表明,常温条件下形成的氧化层(Ⅰ类)应主要是Fe₃O₄;而在高温氧化条件下形成的表面层(Ⅱ类)的主要成分则应是Fe₂O₃。从而表明(STM)可用于研究铁表面氧化过程的不同阶段,并且由Ⅰ类氧化层的低势垒特性说明STM还可以用于观测此类氧化层的内部结构。类似研究方法还可应用到对一系列 关键词：     

Bistability of single 1,5 cyclooctadiene molecules on Si(001)

The adsorption and current-induced bistability of single 1,5 cyclooctadiene molecules on Si(001) were studied in ultrahigh vacuum by low-temperature scanning tunneling microscopy (STM). After a dosage of ≈0.05 L at room temperature followed by cooling to the measuring temperature of 7 K, we find that the cyclic alkene molecule preferably adsorbs in the bridge structure with both C=C double bonds reacting with two adjacent Si dimers via [2+2] cycloaddition reaction. The time-dependent current measured upon tunneling through the adsorbed molecule at fixed STM tip height displays a switching between two current levels with the same mean residence time in each level. Higher bias and/or reduced tip height—and therefore higher current—increase the switching rate, suggesting that the reversible switching is due to inelastic electron tunneling. The observed bistability is interpreted as a dynamic interconversion between two degenerate conformations of the adsorbed molecule.     

Interaction of two symmetric monovacancy defects in graphene

We investigate the interactions between two symmetric monovacancy defects in graphene grown on Ru(0001) after silicon intercalation by combining first-principles calculations with scanning tunneling microscopy(STM). First-principles calculations based on free-standing graphene show that the interaction is weak and no scattering pattern is observed when the two vacancies are located in the same sublattice of graphene, no matter how close they are, except that they are next to each other. For the two vacancies in different sublattices of graphene, the interaction strongly influences the scattering and new patterns' emerge, which are determined by the distance between two vacancies. Further experiments on silicon intercalated graphene epitaxially grown on Ru(0001) shows that the experiment results are consistent with the simulated STM images based on free-standing graphene, suggesting that a single layer of silicon is good enough to decouple the strong interaction between graphene and the Ru(0001) substrate.     

Crossover from coherent to incoherent electronic excitations in the normal state of Bi(2)Sr(2)CaCu(2)O(8+delta)

Angle resolved photoemission spectroscopy (ARPES) and resistivity measurements are used to explore the overdoped region of the high temperature superconductor Bi(2)Sr(2)CaCu(2)O(8+delta). We find evidence for a new crossover line in the phase diagram between a coherent metal phase, for lower temperatures and higher doping, and an incoherent metal phase, for higher temperatures and lower doping. The former is characterized by two well-defined spectral peaks in ARPES due to coherent bilayer splitting and superlinear behavior in the resistivity, whereas the latter is characterized by a single broad spectral feature in ARPES and a linear temperature dependence of the resistivity.     

Topological edge states and electronic structures of a 2D topological insulator： Single-bilayer Bi （111）

Providing the strong spin-orbital interaction, Bismuth is the key element in the family of three-dimensional topological insulators. At the same time, Bismuth itself also has very unusual behavior, existing from the thinnest unit to bulk crystals. Ultrathin Bi （111） bilayers have been theoretically proposed as a two-dimensional topological insulator. The related experimental realization achieved only recently, by growing Bi （111） ultrathin bilayers on topological insulator Bi2Te3 or Bi2Se3 substrates. In this review, we started from the growth mode of Bi （111） bilayers and reviewed our recent progress in the studies of the electronic structures and the one-dimensional topological edge states using scanning tunneling microscopy/spectroscopy （STM/STS）, angle-resolved photoemission spectroscopy （ARPES）, and first principles calculations.     

Atomic-scale structure of single-layer MoS2 nanoclusters

We have studied using scanning tunneling microscopy (STM) the atomic-scale realm of molybdenum disulfide ( MoS2) nanoclusters, which are of interest as a model system in hydrodesulfurization catalysis. The STM gives the first real space images of the shape and edge structure of single-layer MoS2 nanoparticles synthesized on Au(111), and establishes a new picture of the active edge sites of the nanoclusters. The results demonstrate a way to get detailed atomic-scale information on catalysts in general.     

Effects of Cooper pair tunneling on the electronic structure of trilayer cuprate superconductors

Recent angle-resolved photoemission spectroscopy (ARPES) experiment on the optimally doped trilayer cuprate superconductors Bi2223 has revealed a layer variation of both doping density and d-wave gap. In particular, the two outer layers are overdoped with a gap which is larger than the gap for optimally doped single layer cuprates while the inner layer is underdoped with an even larger gap. Here we propose a minimal model composed of three layer t-J Hamiltonian, single particle interlayer tunneling as well as Cooper pair tunneling terms. By using renormalized mean field method, we study the superconducting order parameters and their dependence of tunneling parameters. Some relevant physical quantities have been calculated. Both tunneling effects influence the electronic structure of the trilayer system and their cooperative action may qualitatively explain the ARPES results.     

STM manipulation of a subphthalocyanine double-wheel molecule on Au(111)

A new class of double-wheel molecules is manipulated on a Au(111) surface by the tip of a scanning tunneling microscope (STM) at low temperature. The double-wheel molecule consists of two subphthalocyanine wheels connected by a central rotation carbon axis. Each of the subphthalocyanine wheels has a nitrogen tag to monitor its intramolecular rolling during an STM manipulation sequence. The position of the tag can be followed by STM, allowing us to distinguish between the different lateral movements of the molecule on the surface when manipulated by the STM tip.     

Electronic properties of (Co, Ag) self-organized nano dots on Au(1 1 1) vicinal surfaces

Electronic properties of (Ag, Co) nanostructures grown on Au(1 1 1) vicinal surfaces have been studied by angle resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy and spectroscopy (STM/STS). The growth and self-assembling of Co and Ag nano dots on Au(7 8 8) surface are described. Co island growth leads to the formation of repulsive energy barriers for the surface state, and subsequently to the appearance of confined states in between each group of four Co dots. On the contrary, when Ag nano dots are grown, the potential barrier for the surface electrons is not enough to suppress their dispersive behavior. Nevertheless, inside Ag islands appear new quantized states whose energies can be tailored by varying the deposition rate of the adsorbate and/or the Miller index of the vicinal surfaces. In both systems, high homogeneity of the electronic properties is achieved over a macroscopic scale.