Peierls相变与磁场中碳纳米管的场发射

应用紧束缚模型和WKB方法研究碳纳米管的out-of-plane型Peierls相变,及其对碳纳米管的场发射的影响.结果发现Peierls相变会在室温出现,并使碳纳米管费米面附近出现能隙,导致碳纳米管发生金属—半导体转变,从而抑制碳纳米管的场发射.磁场也会抑制Peierls形变,Peierls相变和磁场相互竞争影响碳纳米管的能带结构,从而影响碳纳米管的场发射. 关键词： 场发射 碳纳米管 Peierls相变     

Effect of uniaxial tensile strength on the electrical properties of doped carbon nanotubes: Density functional theory

We investigated the effect of uniaxial tensile strength on a pristine carbon nanotube, boron-doped carbon nanotube, nitrogen-doped carbon nanotube and co-doped carbon nanotube with boron and nitrogen atoms. To achieve our goal, we performed our calculations with the aid of density functional theory. We studied the changes in the electrical properties after the atomic substitution of a carbon atom by boron, nitrogen, and boron and nitrogen in pristine carbon nanotubes. We also applied uniaxial tensile strength to doped structures as well as pristine one. In addition to studying the band gap, we studied the changes in the Fermi energy, valence bands, and conduction bands. We found that defects as well as stress and strain play a crucial rule on modifying the electrical properties of carbon nanotubes.     

Structure and properties of BeO nanotubes

The structure of a new non-carbon (beryllium oxide BeO) nanotube consisting of a rolled-up graphene sheet is proposed, and its physical properties are described. Ab initio calculations of the binding energy, the electronic band structure, the density of states, the dependence of the strain energy of the nanotube on the nanotube diameter D, and the Young’s modulus Y for BeO nanotubes of different diameters are performed in the framework of the density functional theory (DFT). From a comparison of the binding energies calculated for BeO nanotubes and crystalline BeO with a wurtzite structure, it is inferred that BeO nanotubes can be synthesized by a plasma-chemical reaction or through chemical vapor deposition. It is established that BeO nanotubes are polar dielectrics with a band gap of ～5.0 eV and a stiffness comparable to that of the carbon nanotubes (the Young’s modulus of the BeO nanotubes Y _BeO is approximately equal to 0.7Y _C, where Y _C is the Young’s modulus of the carbon nanotubes). It is shown that, for a nanotube diameter D > 1 nm, the (n, n) armchair nanotubes are energetically more favorable than the (n, 0) zigzag nanotubes.     

Reentrant semiconducting behavior of zigzag carbon nanotubes at substitutional doping by oxygen dimers

The electronic structures of carbon nanotubes doped with oxygen dimers are studied using the ab initio pseudopotential density functional method. The fundamental energy gap of zigzag semiconducting nanotubes exhibits a strong dependence on both the concentration and configuration of oxygen-dimer defects that substitute for carbon atoms in the tubes and on the tube chiral index. For a certain type of zigzag nanotube when doped with oxygen dimers, the energy gap is closed and the tube becomes semimetallic. At higher oxygen-dimer concentrations the gap reopens, and the tube exhibits semiconducting behavior again. The change of the band gap of the zigzag tube is understood in terms of their response to the strains caused by the dimer substitutional doping.     

形变碳纳米管场效应晶体管的电学性质

在紧束缚理论的基础上,推导出轴向拉伸和扭转形变时碳纳米管（CNT）的能带公式.结果显示拉伸和扭转形变都可以改变CNT的导电性质,在金属型和半导体型之间转变,特别是对于锯齿型CNT,根据n 与3的余数关系,在拉伸和扭转中分别显示出三种不同的变化规律.进一步应用场效应晶体管Natori理论模拟计算形变对CNT场效应晶体管的电流-电压特性的影响,锯齿型CNT根据n 与3的余数关系表现出不同的电流变化趋势,而对于扶手椅型CNT轴向拉伸不改变电流;在扭转形变时,CNT电流急剧升高,特别是扶手椅型CNT.锯齿型CNT和扶手椅型CNT的电流随扭转角度和外电压行为明显不同.在某些特定的扭转角度,电流随扭转角度变化非常显著,显示出锯齿型CNT和扶手椅型CNT发生半导体型与金属型之间的转变. 关键词： 碳纳米管 紧束缚理论 费米能级 能带结构     

Excitons in optical spectra of boron-nitride (BN) nanotubes

Exciton effects are studied in single-wall boron-nitride nanotubes. The Coulomb interaction dependence of the band gap, the optical gap, and the binding energy of excitons are discussed. The optical gap of the (5,0) nanotube is about 6 eV at the on-site interaction U=2t with the hopping integral t=1.1 eV. The binding energy of the exciton is 0.50 eV for these parameters. This energy agrees well with that of other theoretical investigations. We find that the energy gap and the binding energy are almost independent of the geometries of nanotubes. This novel property is in contrast with that of the carbon nanotubes, which show metallic and semiconducting properties depending on the chiralities.     

剪切形变对硼氮掺杂碳纳米管超晶格电子结构和光学性能的影响

碳纳米管作为最先进的纳米材料之一, 在电子和光学器件领域有潜在的应用前景, 因此引起了广泛关注. 掺杂、变形及形成超晶格为调制纳米管电子、光学性质提供了有效途径. 为了理解相关机理, 利用第一性原理方法研究了不同剪切形变下扶手椅型硼氮交替环状掺杂碳纳米管超晶格的空间结构、电子结构和光学性质. 研究发现, 剪切形变会改变碳纳米管的几何结构, 当剪切形变大于12%后, 其几何结构有较大畸变. 结合能计算表明, 剪切形变改变了掺杂碳纳米管超晶格的稳定性, 剪切形变越大, 稳定性越低. 电荷布居分析表明, 硼氮掺杂碳纳米管超晶格中离子键和共价键共存. 能带和态密度分析发现硼氮交替环状掺杂使碳纳米管超晶格从金属转变为半导体. 随着剪切形变加剧, 纳米管超晶格能隙逐渐减小, 当剪切形变大于12%后, 碳纳米管又从半导体变为金属. 在光学性能中, 剪切形变的硼氮掺杂碳纳米管超晶格的光吸收系数及反射率峰值较未受剪切形变的均减小, 且均出现了红移.     

Band gap tuning of defective silicon carbide nanotubes under external electric field: Density functional theory

We have theoretically investigated the effect of applying longitudinal and transverse electric field on silicon carbide nanotubes with different orientations of Stone Wales defects. We found that each type of Stone Wales defects maintained different formation energy. We have also successfully proved that the orientation of Stone Wales defects in silicon carbide nanotubes response quite differently upon applying external electric field, whereas, two important and interesting phenomena were observed. First, the semiconductor-metal phase transition occurred in silicon carbide nanotubes as well as the three types of Stone Wales defects. However, clear band gap variations were observed in all silicon carbide nanotubes under study. Second, the band gap variations in pristine silicon carbide nanotubes and nanotubes with different orientations of Stone Wales defects have the same trend, even though all silicon carbide nanotubes have clear band gap values under different strengths of the applied external electric field. However, band gap tuning under longitudinal electric field is less significant compared to band gap tuning under the transverse electric field.     

拓扑缺陷对单壁碳纳米管电子结构及其光学光谱的影响

应用密度泛函理论计算了半导体型单壁碳纳米管(7,0)和(8,0)以及其发生镜像对称和非镜像对称Stone-Wales形变、形成异质结(7,0)—(8,0)情况下的能带结构、吸收光谱、反射光谱,并对计算结果进行了比较。研究发现： 引入拓扑缺陷态后,碳纳米管的能带结构发生了明显的变化,费米能级在不同缺陷情况下移动方向不一致;碳管的吸收和反射明显减弱且吸收峰和反射峰在低能区发生红移现象;在光子能量约为E=13 eV处各碳管的吸收谱和反射谱中均出现一特征峰,并且在引入缺陷以后该特征峰向高能区移动。文章对计算结果进行了分析和探讨,可望利用这种拓扑缺陷的引入而产生的光电特性来设计碳管光电器件。     

Structural and electronic properties of carbon nanotubes under hydrostatic pressures

We studied the structural and electronic properties of carbon nanotubes under hydrostatic pressures based on molecular dynamics simulations and first principles band structure calculations. It is found that carbon nanotubes experience a hard-to-soft transition as external pressure increases. The bulk modulus of soft phase is two orders of magnitude smaller than that of hard phase. The band structure calculations show that band gap of (10, 0) nanotube increases with the increase of pressure at low pressures. Above a critical pressure (5.70GPa), band gap of (10, 0) nanotube drops rapidly and becomes zero at 6.62GPa. Moreover, the calculated charge density shows that a large pressure can induce an {sp}²-to-{sp}³ bonding transition, which is confirmed by recent experiments on deformed carbon nanotubes.     

Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field

Ab initio calculations demonstrated that the energy gap modulation of a chiral carbon nanotube with mono-vacancy defect can be achieved by applying a transverse electric field. The bandstructure of this defective carbon nanotube varying due to the external electric field is distinctly different from those of the perfect nanotube and defective zigzag nanotube. This variation in bandstructure strongly depends on not only the chirality of the nanotube and also the applied direction of the transverse electric field. A mechanism is proposed to explain the response of the local energy gap between the valence band maximum state and the local gap state under external electric field. Several potential applications of these phenomena are discussed.     

轴压和扭转复合载荷作用下氮化硼纳米管屈曲行为的分子动力学模拟

采用分子动力学方法模拟了氮化硼纳米管在轴压和扭转复合荷载作用下的屈曲和后屈曲行为.在各加载比例下,给出了初始线性变形阶段和后屈曲阶段原子间相互作用力的变化,确定了屈曲临界荷载关系.通过对屈曲模态的细致研究,从微观变形机理上分析了纳米管对不同外荷载力学响应的差异.研究结果表明,扶手型和锯齿型纳米管均呈现出非线性的屈曲临界荷载关系,复合加载下的屈曲行为具有强烈的尺寸依赖性.温度升高将导致屈曲临界荷载的下降,且温度的影响随加载比例的变化而变化.无论在简单加载或复合加载中,同尺寸的碳纳米管均比氮化硼纳米管具有更强地抵抗屈曲荷载的能力.     

Bright band gap photoluminescence from unprocessed single-walled carbon nanotubes

Unprocessed single-walled carbon nanotubes suspended in air at room temperature emit bright, sharply peaked band gap photoluminescence. This is in contrast with measurements taken from nanotubes lying on the flat surface for which no luminescence was detected. Each individual nanotube has a luminescence peak of similar linewidth ( approximately 13 meV), with different species emitting at various different wavelengths spanning at least 1.0 to 1.6 microm. A strong enhancement of photoluminescence intensity is observed when the excitation wavelength is resonant with the second Van Hove singularity, unambiguously confirming the origin of the photoluminescence.     

Energy and electronic properties of non-carbon nanotubes based on silicon dioxide

The geometric, energy, and electronic characteristics of new non-carbon nanotubes based on silicon dioxide are investigated in the framework of the local electron density functional formalism. Nanotubes are classified according to the type of rolling-up of the SiO₂ sheet. It is shown that, among the entire set of considered nanotubes with different symmetries, the (6, 0) nanotubes are energetically more favorable. The densities of states for nanotubes are calculated. It is established that all nanotubes are dielectrics with a wide band gap. The band gap varies over a wide range with a change in the longitudinal strain of the nanotube.     

Hexagonal silicon nanotube confined inside a carbon nanotube: A first-principles study

We studied the stability, geometrical structures and electronic energy band of hexagonal silicon nanotube (SiNT) confined inside carbon nanotubes based on first-principle calculations. The results show that the encapsulating process of SiNT is exothermic in (9,9) carbon nanotube while endothermic in (8,8) and (7,7) carbon nanotubes. When the SiNT is inserted into (9,9) carbon nanotube, the insertion energy is about 0.09 eV. Energy band of SiNT@(9,9) nanotube is not distorted greatly compared with the superposition of bands of isolated SiNT and (9,9) carbon nanotube. Especially, a parabolic band occurs near the Fermi level of energy band in SiNT@(7,7) nanotube. Such a band could be a nearly free electronic state originating from carbon nanotube. Moreover, we discuss the variation of total energy as the SiNT rotates around its axis inside carbon nanotubes.     

Adsorption on the graphene surface of carbon nanotubes and their energy spectrum

The conditions of formation of local states in the energy spectra of semi-infinite carbon nanotubes with regularly arranged atoms adsorbed on the outer surface are studied in the π-electron approximation. The influence of the adsorption type (physical and chemical), the donor-acceptor properties of adsorbed atoms, their concentration on the graphene surface, and the nanotube diameter on the characteristics of the local states that arise is considered. It is shown that both physical and chemical adsorptions cause a decrease in the band gap separating the upper filled energy band and the lower vacant band. This effect can significantly change the electrical and optical properties of the nanotubes under consideration in comparison with the initial “pure” tubulene.     

Electronic properties of oxidized carbon nanotubes

The effect of oxygenation on the electronic properties of semiconducting carbon nanotubes is studied from first principles. The O2 is found to bind to a single-walled nanotube with an adsorption energy of about 0.25 eV and to dope semiconducting nanotubes with hole carriers. Weak hybridization between carbon and oxygen is predicted for the valence-band edge states. The calculated density of states shows that weak coupling leads to conducting states near the band gap. The oxygen-induced gap closing for large-diameter semiconducting tubes is discussed as well. The influence of oxygen on the magnetic property is also addressed through a spin-polarized calculation and compared to experiment.     

温度对单壁碳纳米管端口结构的影响

利用紧束缚势分子动力学模拟方法，研究了温度在2000—3500 K之间单壁碳纳米管端口结构的变化趋势.研究表明，温度对整个管端口结构起关键作用，计算表明温度在3000K和3500K下碳管两端口在15ps时间尺度内依次闭合，温度高易于使理想单壁碳管端口封闭，且端口封闭导致碳管系统能量的降低.由于Armchair型碳纳米管与相同半径的Zigzag型碳纳米管相比有相对低的应力能，导致Armchair型碳纳米管更易形成端口封闭的结构. 关键词： 碳纳米管 紧束缚势     

Optical transition energies for carbon nanotubes from resonant Raman spectroscopy: environment and temperature effects

This Letter reports the laser energy dependence of the Stokes and anti-Stokes Raman spectra of carbon nanotubes dispersed in aqueous solution and within solid bundles, in the energy range 1.52-2.71 eV. The electronic transition energies (E(ii)) and the radial breathing mode frequencies (omega(RBM)) are obtained for 46 different (18 metallic and 28 semiconducting) nanotubes, and the (n,m) assignment is discussed based on the observation of geometrical patterns for E(ii) versus omega(RBM) graphs. Only the low energy component of the E(M)(11) value is observed from each metallic nanotube. For a given nanotube, the resonant window is broadened and down-shifted for single wall carbon nanotube (SWNT) bundles compared to SWNTs in solution, while by increasing the temperature, the E(S)(22) energies are redshifted for S1 [(2n+m) mod 3=1] nanotubes and blueshifted for S2 [(2n+m) mod 3=2] nanotubes.     

Magnetotransport properties in magnetic nanotubes studied using Monte Carlo simulations

The dependences of the magnetoelectric transport properties of nanotubes on the temperature, diameter and anisotropy were simulated using the Monte Carlo method, the Heisenberg model and the Drude formula. The simulations included the effects of an external magnetic field, magnetocrystalline anisotropy and nearest neighbor interactions. Two types of nanotubes with different unit cells (square and hexagonal) were implemented. The influence of the nanotube geometry was also analyzed. A smaller dependence of the resistivity on the nanotube diameter and magnetocrystalline anisotropy was observed for the square unit cell nanotubes compared to the results obtained for the hexagonal unit cell nanotubes. Furthermore, lower fluctuations in the resistivity were observed in the former. In contrast, an external magnetic field had a greater influence on the resistivity of the square unit cell nanotubes than for the hexagonal unit cell nanotubes.