Electrical and optical properties of pure and KClO3-doped P(MMA-CO-4VPNO) polymer electrolyte films

Ion-conducting polymer electrolyte films based on a copolymer poly(methyl-methacrylate-co-4-vinyl pyridine N-oxide) [P(MMA-CO-4VPNO)] complexed with potassium chlorate (KClO₃) were prepared by solution cast technique. The complexation of KClO₃ salt with the polymer was confirmed by X-ray diffraction and infrared studies. The electrical conductivity and optical absorption of pure and KClO₃-doped P(MMA-CO-4VPNO) polymer electrolyte films have been studied. The electrical conductivity increased with increasing dopant concentration, which is attributed to the formation of charge transfer complexes. The variation of electrical conductivity with temperature shows two regions with two activation energies. Optical properties like direct band gap, indirect band gap, and optical absorption edge were investigated for pure and doped polymer films in the wavelength range 300–550 nm. It was found that the energy gaps and band edge values shifted to lower energies on doping. The behavior is in an agreement with the activation energies obtained from the conductivity data.     

Electrical and optical properties of pure and Pb2+ ion doped PVA???PEG polymer composite electrolyte films

Pb²⁺ ion conducting polymer composite electrolyte films, based on polyvinyl alcohol and polyethylene glycol doped with Pb(NO₃)₂ salt, were prepared using the solution cast technique. X-ray diffraction patterns of polymer composite with salt reveal the decrease in the degree of crystallinity with increasing concentration of the salt. The dielectric plots show an increase in dielectric permittivity at low frequency side with increasing salt concentration as well as temperature. The frequency dependence of ac conductivity obeys the Jonscher power law, and the maximum dc conductivity value is found to be 2.264×10^?7 S/m at 303?K for the polymer composite with 30?mol% Pb(NO₃)₂. The activation energy for the ion in polymer electrolyte has been calculated from the modulus plots, and is in good agreement with the activation energy calculated from the temperature-dependent dc conductivity plot. The modulus plots indicate the non-Debye nature of the sample. For pure and doped films at room temperature, the impedance plots exhibit only one semicircle, indicating the presence of one type of conduction mechanism, whereas for 30?mol% salt doped with electrolyte film at different temperatures, it demonstrated the existence of bulk and electrode?Celectrolyte interface properties. Optical absorption spectra show a broad peak for all complexes, while compared with pure polymer composite, due to the complex formation of polymer electrolyte with Pb(NO₃)₂ and their absorption edge, direct band gap and indirect band gap were calculated. It was found that the absorption edge and energy gap values decreased on doping with Pb(NO₃)₂ dopant.     

Electronic and optical properties of pure and Mo doped anatase TiO2 using GGA and GGA+U calculations

Comparative GGA and GGA+U calculations for pure and Mo doped anatase TiO₂ are performed based on first principle theory, whose results show that GGA+U calculation provide more reliable results as compared to the experimental findings. The direct band gap nature of the anatase TiO₂ is confirmed, both by using GGA and GGA+U calculations. Mo doping in anatase TiO₂ narrows the band gap of TiO₂ by introducing Mo 4d states below the conduction band minimum. Significant reduction of the band gap of anatase TiO₂ is found with increasing Mo doping concentration due to the introduction of widely distributed Mo 4d states below the conduction band minimum. The increase in the width of the conduction band with increasing doping concentration shows enhancement in the conductivity which may be helpful in increasing electron–hole pairs separation and consequently decreases the carrier recombination. The Mo doped anatase TiO₂ exhibits the n-type characteristic due to the shifting of Fermi level from the top of the valence band to the bottom of the conduction band. Furthermore, a shift in the absorption edge towards visible light region is apparent from the absorption spectrum which will enhance its photocatalytic activity. All the doped models have depicted visible light absorption and the absorption peaks shift towards higher energies in the visible region with increasing doping concentration. Our results describe the way to tailor the band gap of anatase TiO₂ by changing Mo doping concentration. The Mo doped anatase TiO₂ will be a very useful photocatalyst with enhanced visible light photocatalytic activity.     

Conductivity and optical studies of plasticized solid polymer electrolytes doped with carbon nanotube

Solid polymer electrolyte films based on Poly(ethylene oxide) (PEO) complexed with lithium hexafluorophosphate (LiPF₆), ethylene carbonate (EC) and amorphous carbon nanotube (αCNTs) were prepared by the solution cast technique. The conductivity increases from 10^?10 to 10^?5 Scm^?1 upon the addition of salt. The incorporation of EC and αCNTs to the salted polymer enhances the conductivity significantly to 10^?4 and 10^?3 Scm^?1. The complexation of doping materials with polymer were confirmed by X-ray diffraction and infrared studies. Optical properties like direct band gap and indirect band gap were investigated for pure and doped polymer films in the wavelength range 200–400 nm. It was found that the energy gaps and band edge values shifted to lower energies on doping.     

Electrical,optical, and structural characterization of polymer blend (PVC/PMMA) electrolyte films

Ion-conducting solid polymer blend electrolytes based on polyvinyl chloride (PVC)/poly methyl methacrylate (PMMA) complexed with sodium perchlorate (NaClO₄) were prepared in various concentrations by solution cast technique. The features of complexation of the electrolytes were studied by X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. DC conductivity of the films was measured in the temperature range 303–398 K. Transference number measurements were carried out to investigate the nature of charge transport in the polymer blend electrolyte system. The electrical conductivity increased with increasing dopant concentration, which is attributed to the formation of charge transfer complexes. The polymer complexes exhibited Arrhenius type dependence of conductivity with temperature. In the temperature range studied, two regions with different activation energies were observed. Transference number data showed that the charge transport in this system is predominantly due to ions. Optical properties like absorption edge, direct band gap, and indirect band gap were estimated for pure and doped films from their optical absorption spectra in the wavelength region 200–600 nm. It was found that the energy gap and band edge values shifted to lower energies on doping with NaClO₄ salt. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamil Nadu, India, Dec. 7–9, 2006.     

3d过渡金属掺杂锐钛矿相TiO2的第一性原理研究

采用基于密度泛函理论的平面波超软赝势方法研究了纯锐钛矿相TiO₂及掺杂3d过渡金属TiO₂的几何、电子结构及光学性质. 计算结果表明掺杂能级的形成主要是掺杂过渡金属3d轨道的贡献，掺杂能级在禁带中的位置是决定TiO₂吸收带边能否出现红移的重要因素. Cr，Mn，Fe，Ni，Co，Cu掺杂使TiO₂的吸收带边产生红移，并在可见光区有一定的吸收系数； Sc，Zn掺杂使TiO₂的吸收带边产生蓝移，但在可见光区有较大的吸收系数；掺V不但使TiO₂的吸收带边产生红移，增强了在紫外光区的光吸收，而且在可见光区有非常大的吸收系数.     

Preparation and characterization of Mn doped copper nitride films with high photocurrent response

The Mn-doped copper nitride (Cu₃N) films with Mn concentration of 2.0 at. % have high crystallinity and uniform surface morphology. We found that the as-synthesized Mn-doped Cu₃N films show suitable optical absorption in the visible region and the band gap is ∼1.48 eV. A simple photodetector based on Mn doped Cu₃N films was firstly fabricated via magnetron sputtering method. The fabricated device with doping of Mn demonstrated high photocurrent response and fast response shorter than 0.1 s both for rise and decay time superior to the pure Cu₃N. Furthermore, the energy levels of Mn-doped Cu₃N matched well with ITO and Ag electrode. The excellent photoelectric properties reflect a good balance between sensitivities and response rate. Our investigation reveals the excellent potential of Mn-doped Cu₃N films for application of photodetectors.     

First-principles study of the effect of heavy Ni doping on the electronic structure and absorption spectrum of wurtzite ZnO

The band structures, densities of states and absorption spectra of pure ZnO and two heavily Ni doped supercells of Zn_0.9722Ni_0.0278O and Zn_0.9583Ni_0.0417O have been investigated using the first-principles plane-wave ultrasoft pseudopotential method based on the density functional theory. The calculated results showed that the band gap is narrowed by Ni doping in ZnO; this, is because the conduction band undergoes a greater shift toward the low-energy region than the valence band and because heavier doping concentrations lead to, narrower band gaps. Moreover, the optical absorption edge exhibits a redshift due to the narrowing of the band gap. Heavier doping concentrations leads to more significant redshifts, which is in agreement with the experimental results.     

Effect of Fe3+ doping on structural,optical and electrical properties δ-Bi2O3 thin films

Fe³⁺ doped δ-Bi₂O₃ thin films were prepared by sol–gel method on quartz glass substrate at room temperature and annealed at 800 °C. The thin films were then characterized for structural, surface morphological, optical and electrical properties by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption measurements and d.c. two-probe, respectively. The XRD analyses revealed the formation δ-Bi₂O₃ followed by a mixture of Bi₂₅FeO₄₀ and Bi₂Fe₄O₉. SEM images showed reduction in grain sizes after doping and the optical studies showed a direct band gap which reduced from 2.39 eV for pure δ-Bi₂O₃ to 1.9 eV for 10% Fe³⁺ doped δ-Bi₂O₃ thin film. The electrical conductivity measurement showed the films are semiconductors.     

Enhancement of photoluminescence emission intensity of zirconia thin films via aluminum doping for the application of solid state lighting in light emitting diode

Al doped ZrO₂ thin films were deposited on quartz substrates by sol–gel dip coating technique. X-ray diffraction pattern showed the deterioration of the crystallinity of the films with increase in Al doping concentration due to the formation of stress in the film. Scanning electron microscope images showed crack free surface. An average transmittance of >80% (in UV–vis region) was observed for all samples. Optical band gap was found to vary as a function of doping concentration. Photoluminescence spectra of the films exhibited an increase in the emission intensity with increase in Al doping concentration which is due to the increase in oxygen vacancies in the Al doped films. The “Blueshift” and “Redshift” of the PL spectra with increase in Al concentration originates from the change of stress in the films. The enhancement of PL intensity in the Al doped ZrO₂ thin films make it suitable for generation of solid state lighting in light emitting diode.     

Zn掺杂β-Ga2O3薄膜的制备和特性研究

β-Ga₂O₃是一种宽带隙半导体材料,能带宽度E_g≈5.0eV,在光学和光电子学领域有广泛的应用。用射频磁控溅射方法在Si衬底和远紫外光学石英玻璃衬底制备了本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜,用紫外 可见分光光度计、X射线衍射仪、荧光分光光度计对本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜的光学透过、光学吸收、结构和光致发光进行了测量,研究了Zn掺杂和热退火对薄膜结构和光学性质的影响。退火后的β-Ga₂O₃薄膜为多晶结构,与本征β-Ga₂O₃薄膜相比,Zn掺杂β-Ga₂O₃薄膜的β-Ga₂O₃(111)衍射峰强度变小,结晶性变差,衍射峰位从35.69°减小至35.66°。退火后的Zn掺杂β-Ga₂O₃薄膜的光学带隙变窄,光学透过降低,光学吸收增强,出现了近边吸收,薄膜的紫外、蓝光及绿光发射增强。表明退火后Zn掺杂β-Ga₂O₃薄膜中的Zn原子被激活充当受主。     

EFFECT OF ZnFe22O4 DOPING ON THE OPTICAL PROPERTIES OF TiO2 THIN FILMS

Amorphous TiO₂ thin films and ZnFe₂O₄ doped TiO₂ composite films were deposited by radio frequency magnetron sputtering. The effect of ZnFe₂O₄ doping on the optical properties of TiO₂ thin films was reported. Our results show that the absorption edge of TiO₂ thin films and composite films exhibits a blue shift with decreasing annealing temperature. The absorption edge of composite films has moved to visible spectrum range, and a very large red shift occurs in comparison with TiO₂ thin film. An enhanced photoluminescence in ZnFe₂O₄ doped anatase TiO₂ thin film at room temperature.     

Optical limiting action of C60 doped poly(ethylacetylenecarboxylate)

The optical limiting action of C₆₀ doped poly(ethylacetylenecarboxylate) polymer has been carried out using Pulse Nd-YAG laser at 532 nm as the source of excitation. The optical limiting measurements were performed at three different doping concentrations. The optical limiting efficiency of the C₆₀ doped poly(ethylacetylenecarboxylate) polymer was studied at various doping concentrations, the threshold limiting fluence at 0.15 J/cm² was observed with transmission of about 89%. An explanation based on the combination of two-photon absorption and reverse saturable absorption was proposed for its nonlinear optical absorption behavior.     

Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

We have carried out comprehensive computational and experimental study on the face-centered cubic Ge₂Sb₂Te₅ (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge–Te, Sb–Te and Te–Te bond lengths. In element substitutes Sb to form In–Te-like structure in the GST system. In–Te has a weaker bond strength compared with the Sb–Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In₂Te₃ crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation \( \alpha h\nu = \beta (h\nu - E_{\text{g }} )^{2} \) . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials.     

Structural, electrical and optical properties of TiO2 doped WO3 thin films

TiO₂ doped WO₃ thin films were deposited onto glass substrates and fluorine doped tin oxide (FTO) coated conducting glass substrates, maintained at 500 °C by pyrolytic decomposition of adequate precursor solution. Equimolar ammonium tungstate ((NH₄)₂WO₄) and titanyl acetyl acetonate (TiAcAc) solutions were mixed together at pH 9 in volume proportions and used as a precursor solution for the deposition of TiO₂ doped WO₃ thin films. Doping concentrations were varied between 4 and 38%. The effect of TiO₂ doping concentration on structural, electrical and optical properties of TiO₂ doped WO₃ thin films were studied. Values of room temperature electrical resistivity, thermoelectric power and band gap energy (E_g) were estimated. The films with 38% TiO₂ doping in WO₃ exhibited lowest resistivity, n-type electrical conductivity and improved electrochromic performance among all the samples. The values of thermoelectric power (TEP) were in the range of 23-56 μV/K and the direct band gap energy varied between 2.72 and 2.86 eV.     

Crystalline and optical properties of Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>S (0.5 ≤ <Emphasis Type="Italic">x</Emphasis> ≤ 1) films doped with silver

The results from studying Cd _x Zn_1–x S (0.5 ≤ x ≤ 1) films fabricated via pyrolysis from thiourea coordination compounds of cadmium and zinc bromides doped with silver ions having impurity concentrations of 10^–7, 10^–6, 10^–5, 10^–4, and 10^–3 mol L^–1 in sputtered solutions are presented. Films prepared at 400°С have the wurtzite lattice. The bandgap of pure and doped films, determined from absorption spectra near the edge of fundamental absorption, varies linearly from 2.5 to 3.11 eV. An order of magnitude increase in the intensity of luminescence is observed after doping with silver.     

Photoconductivity and dark conductivity of hydrogenated amorphous silicon

The study of plasma-deposited hydrogenated amorphous silicon films prepared in various deposition systems and under the use of different gases (SiH₄, SiD₄, Si₂H₄) shows a unique correlation between the photoconductivity and the dark conductivity of undoped and lightly doped films grown under optimized conditions. Deviations from his relation occur at high doping levels, in particular for boron doping, as well as upon annealing. They are attributed to an increased density of gap states due to hydrogen depletion.     

Investigations on the mechanism of carrier transport in plasma polymerized pyrrole thin films

Plasma polymerization is found to be an excellent technique for the preparation of good quality, pinhole-free, polymer thin films from different monomer precursors. The present work describes the preparation and characterization of polypyrrole (PPy) thin films by ac plasma polymerization technique in their pristine and in situ iodine doped forms. The electrical conductivity studies of the aluminium-polymer-aluminium (Al-polymer-Al) structures have been carried out and a space charge limited conduction (SCLC) mechanism is identified as the most probable mechanism of carrier transport in these polymer films. The electrical conductivity shows an enhanced value in the iodine doped sample. The reduction of optical band gap by iodine doping is correlated with the observed conductivity results.     

Structural, magnetic and electronic structure studies of Mn doped TiO2 thin films

We report structural, magnetic and electronic structure study of Mn doped TiO₂ thin films grown using pulsed laser deposition method. The films were characterized using X-ray diffraction (XRD), dc magnetization, X-ray magnetic circular dichroism (XMCD) and near edge X-ray absorption fine structure (NEXAFS) spectroscopy measurements. XRD results indicate that films exhibit single phase nature with rutile structure and exclude the secondary phase related to Mn metal cluster or any oxide phase of Mn. Magnetization studies reveal that both the films (3% and 5% Mn doped TiO₂) exhibit room temperature ferromagnetism and saturation magnetization increases with increase in concentration of Mn doping. The spectral features of XMCD at Mn L_3,2 edge show that Mn²⁺ ions contribute to the ferromagnetism. NEXAFS spectra measured at O K edge show a strong hybridization between Mn, Ti 3d and O 2p orbitals. NEXAFS spectra measured at Mn and Ti L_3,2 edge show that Mn exist in +2 valence state, whereas, Ti is in +4 state in Mn doped TiO₂ films.     

Enhanced flux-pinning in fluorine-free MOD YBCO films by chemical doping

YBCO films without and with dilute cobalt and zinc doping were prepared on (0 0 l) LaAlO₃ substrate by non-fluorine metal organic deposition method. Effects of dilute cobalt and zinc doping on biaxial texture, microstructure and flux-pinning properties of YBCO films were investigated. The surface density and smoothness of the doped YBCO films have been distinctly improved compared with that of the pure film. Dilute cobalt- and zinc-doped YBCO films exhibit significantly enhanced J_c values in the magnetic field. The best result is achieved in the cobalt-doped YBCO film. At 77 K, J_c values of cobalt-doped film are 1.7 and 5.4 times higher than that of pure film in 0.5 T and 1.5 T, respectively. These results strongly suggest that dilute cobalt and zinc doping is a promising way to increase the current carrying capability of YBCO films.