Hopping conductivity of carbynes modified under high pressures and temperatures: Galvanomagnetic and thermoelectric properties

The conductivity, thermopower, and magnetoresistance of carbynes structurally modified by heating under a high pressure are investigated in the temperature range 1.8–300 K in a magnetic field up to 70 kOe. It is shown that an increase in the synthesis temperature under pressure leads to a transition from 1D hopping conductivity to 2D and then to 3D hopping conductivity. An analysis of transport data at T ≤ 40 K makes it possible to determine the localization radius a ～ (56?140) Å of the wave function and to estimate the density of localized states _g(E _F) for various dimensions d of space: _g(E _F) ≈ 5.8 × 10⁷ eV^?1 cm^?1 (d=1), _g(E _F) ≈5×10¹⁴ eV^?1 cm ^?2 (d=2), and _g(E _F)≈1.1×10²¹ eV^?1 cm_?3 (d=3). A model for hopping conductivity and structure of carbynes is proposed on the basis of clusterization of sp ² bonds in the carbyne matrix on the nanometer scale.     

Temperature shift of the CdxHg1−xTe energy gap

The temperature coefficient of the Cd_xHg_1?xTe energy gap dE_g/dT as a sum of lattice dilatation and the phonon-electron interaction terms has been calculated as the function of molar composition x, for 0?x?0.3, in the temperature range 4.2–300 K. A non-linear dependence of $\text{d}\text{E}{}_{\mathrm{g}}\text{d}\text{T}$ vs x and a strong effect of temperature on $\text{d}\text{E}{}_{\mathrm{g}}\text{d}\text{T}$ values have been obtained and a comparison with experimental data is discussed.     

A tunneling spectroscopy study of the temperature dependence of the forbidden band in Bi2Te3 and Sb2Te3

Tunneling measurements of dI/dV, d ² I/dV ², and d ³ I/dV ³ were formed along the C ₃ axis (normally to layers) for Bi₂Te₃ and Sb₂Te₃ layered semiconductors in the temperature range 4.2<T>29 5 K. Temperature dependences of the forbidden band energy E _g were obtained. The forbidden band energy in Bi₂Te₃ was 0.20 eV at room temperature and increased to 0.24 eV at T=4.2 K. The E _g value for Sb₂Te₃ was 0.25 eV at 295 K and 0.26 eV at 4.2 K. The distance between the top of the higher valence band of light holes and the top of the valence band of heavy holes situated lower was found to be ΔE _V≈19 meV in Bi₂Te₃; this distance was independent of temperature. The conduction bands of Bi₂Te₃ and Sb₂Te₃ each contain two extrema with distances between them of ΔE _c≈25 and 30 meV, respectively.     

Dielectric Spectroscopy of Strongly Correlated Electronic States of Vanadium Dioxide

The thermal evolution of the conductivity of a VO₂ film and database-obtained band gap E_g of film nanocrystallites is traced in the temperature range of –196°C < T < 100°C (77 K < T < 273 K); the level position of donor impurity centers is determined to be E_d = 0.04 eV. It is shown that energy E_g decreases from 0.8 to ～0 eV with an increase in temperature in the range of 273 K < T < 300 K, which is caused by the narrowing of the energy gap due to correlation effects and considered as the temperature-extended Mott “insulator–metal” electron phase transition with the monoclinic lattice symmetry retained. The subsequent jump in the symmetry from monoclinic to tetragonal with a further increase in temperature is considered as the Peierls structural phase transition, the temperature of which is in the vicinity of 340 K and determined by the size effects, nonstoichiometry of VO₂ film nanocrystallites, and degree of their adhesion to the substrate.     

Temperature dependence of interband transitions and exchange splitting in nickel

Interband transitions of Ni have been studied as a function of temperature by observing energy losses of low energy electrons reflected from a Ni(100) surface. A threshold is found at E_g ～ 0.15 eV and interpreted as the onset of X^↑₅ → X^↓₂ transitions. The threshold remains unchanged for temperatures up to 900 K. The loss continuum below E_g exhibits an anomalous increase with temperature with a discontinuity in the slope at T ～ 1.2 T_c.     

Radiative properties of α-ZnAl2S4:V spinel type single crystals

The absorption and luminescent properties of α-ZnAI₂S₄:V spinel type crystals in the temperature range 10-300 K are investigated. The spectra are assigned to the electronic transitions of trivalent vanadium ions located in octahedral sites. It is shown that at low temperatures the three main components of the revealed IR luminescence spectra are caused by the ¹A_1g(¹G)→¹E_g(¹D), ¹T_2g(¹D), ³T_2g(³F)→³T_1g(³F), and ¹E_g(¹D)→³T_1g(³F) transitions. The observed dependencies of the emission components intensities on temperature are explained assuming that there is a phonon assisted tunnelling between ³T_2g(³F) and ¹E_g(¹D) states. On temperature rise, the ³T_2g(³F)→³T_1g(³F) vibronic transitions suppress other emission channels, which leads to the enhancement of the integral luminescence intensity and to the broadening of the spectrum centred at λ=1.4 μm.     

Temperature dependence of the energy gap of MgxZn1−xTe semiconductors alloys

Wavelength-modulation spectroscopy is used to obtain the temperature dependence of the near band gap reflectivity spectrum E_o of Mg_xZn_1?xTe ternary semiconducting alloys. Results are given in the range 80–100 K for the cubic materials: 0〈x〈0.5. The analysis of the line shapes as a function of x and T confirms the hypothesis of an exciton bound to the complex defect associated with zinc vacancy, as ZnTe. The E_o(x) curve is parabolic. The bowing parameter is C=0.45 ± 0.1 eV at 80 K, C=0.6 ± 0.1 eV at 300 K. Within experimental scattering the temperature coefficient dE₀dT is nearly constant with x:-4.5±0.3 × 10^?4eVK^?1. This data is smaller than the value calculated in the literature for ZnTe from pseudo potential method.     

Critical behavior of the optical absorption edge in EuO

Measurements of the temperature dependence of the optical absorption edge, E_g(T), in EuO, at the close vicinity of its critical temperature, T_c, are reported. In agreement with theoretical expectations the analysis of the results, with the constraints of continuous E_g and dE_g/dT, yielded the same critical exponents (α = α' ≈ -0.044) and amplitude ratio (|A/Á| ≈ 1.22) as the specific heat data analysis.     

Effect of heat treatment on the optical and electrical transport properties of Ge15Sb10Se75 and Ge25Sb10Se65 thin films

The effect of heat treatment on the optical and electrical properties of Ge₁₅Sb₁₀Se₇₅ and Ge₂₅Sb₁₀Se₆₅ thin films in the range of annealing temperature 373-723 K has been investigated. Analysis of the optical absorption data indicates that Tauc's relation for the allowed non-direct transition successfully describes the optical processes in these films. The optical band gap (E_g^opt.) as well as the activation energy for the electrical conduction (ΔE) increase with the increase of annealing temperature (T_a) up to the glass transition temperature (T_g). Then a remarkable decrease in both the E_g^opt. and ΔE values occurred with a further increase of the annealing temperature (T_a>T_g). The obtained results were explained in terms of the Mott and Davis model for amorphous materials and amorphous to crystalline structure transformations. Furthermore, the deduced value of E_g^opt. for the Ge₂₅Sb₁₀Se₆₅ thin film is higher than that observed for the Ge₁₅Sb₁₀Se₇₅ thin film. This behavior was discussed on the basis of the chemical ordered network model (CONM) and the average value for the overall mean bond energy 〈E〉 of the amorphous system Ge_xSb₁₀Se_90−x with x=15 and 25 at%. The annealing process at T_a>T_g results in the formation of some crystalline phases GeSe, GeSe₂ and Sb₂Se₃ as revealed in XRD patterns, which confirms our discussion of the obtained results.     

Influence of temperature on raman spectra of the FeS2 single crystal with pyrite structure

Raman scattering in a natural FeS₂ single crystal with the pyrite structure was investigated in the temperature range of 80–300 K. All five Raman-active modes E _g , T _g (1), T _g (2), A _g , and T _g (3) were observed under normal conditions (T = 23°C). The influence of temperature on the Raman spectra was studied in the HH configurations (polarizations of the incident and scattered radiations are parallel), which made it possible to detect the strongest spectral lines A _g and E _g . Widths of modes E _g and A _g were substantially smaller than those given in previous publications. It was found that the temperature dependences of frequencies and widths (FWHM) of modes A _g and E _g are approximated well by the Klemens model, which describes the three-phonon scattering mechanism.     

Effect of Alkyl Side Chain Length on Relaxation Behaviors in Poly(n-alkyl Acrylates) and Poly(n-alkyl Methacrylates)

Dynamic mechanical analysis (DMA) is used to investigate the effect of alkyl side chain length on the relaxation behavior of poly(n-alkyl acrylates) (PnAA) and poly(n-alkyl methacrylates) (PnAMA) above the glass transition temperature (T_g). Master curves and shift factors (log a_T) were obtained using the time–temperature superposition (TTS) principle. The log a_T curves of PnAA and PnAMA exhibit a dynamic crossover from one Vogel–Fulcher–Tammann–Hesse (VFTH) equation to another above T_g. The corresponding temperature was designated as the dynamic crossover temperature (T_c). It is found that T_c/T_g and the apparent activation energy (E_g) increases, e whereas the fragility index (m) decreases with increasing alkyl side chain length. Further analysis shows that m ∝ T_g, E_g∝ , and E_g∝ m² for both PnAA and PnAMA.     

The nature of temperature dependence of energy gaps in layer semiconductors

The temperature dependences of direct and indirect energy gaps in layer semiconductors GaS, GaSe and GaS_xSe_1?x are investigated in the temperature range 5–150 K. The nonmonotonous behaviour of E_g(T) dependences is observed in these crystals. It is shown that the effect of thermal expansion cannot in itself explain the observed anomalies. A new model of electron-phonon interaction explaining the E_g(T) behaviour in layer crystals is proposed.     

The excitonic absorption spectrum of thin Ag2ZnI4 films

The electron absorption spectrum of thin films of the Ag₂ZnI₄ complex compound is studied at photon energies of 3–6 eV. It is established that the interband absorption edge corresponds to an allowed direct transitions across the energy gap E _g=3.7 eV. A strong exciton band is adjacent to the absorption edge at E _ex=3.625 eV (80 K); in the 80–390 K range, the temperature behavior of the half-width Γ of this band is determined by the exciton-phonon interaction typical of quasi-one-dimensional excitons. At T≤390 K, a discontinuity in the slope of the E _ex(T) and Γ(T) dependences is observed. This discontinuity is associated with the generation of Frenkel defects and is accompanied by the transfer of Ag ions to the interstitial sites and vacancies of the crystal lattice of the compound.     

Variable temperature EPR study of Fe2+ spin transition in Cu2+ doped [Fe(trz)(Htrz)2](BF4)

The temperature dependence of the EPR spectrum of Cu²⁺ in the range 293–393 K exhibits a low-spin (S=0) to high-spin (S=2) transition of the Fe²⁺ ions, with hysteresis (T _c↑=363 K,T _c↓=343 K). At 103 K, the principal values of theg and hyperfine tensors of Cu²⁺ ions are revealed by hyperfine structure.     

Temperature dependence of the fine structure of the C and E absorption bands in RbMnF3 below the Néel temperature

The variation in the parameters (width, position, intensity) of the fine structure lines in the C[⁶ A _1g → ⁴ A _1g , ⁴ E _g(⁴ G)] and E[⁶ A _1g → ⁴ E _g(⁴ D)] bands in RbMnF₃ with temperature is studied in the temperature range 10–70 K. In the C band, two narrow (<6 cm^?1) lines are are distinguished at distances of 77 and 80 cm^?1 from the exciton line at T = 10 K. The other lines in the C band and all lines in the E band are more than 20 cm^?1 wide. It is demonstrated that the narrow lines become allowed because of the spin-exchange interaction within a long-range magnetic order model and originate from the excitation of exciton-magnon bound states and that the other lines are made allowed by the exchange-vibronic mechanism within a short-range magnetic order model and originate from the excitation of bound states composed of an exciton, magnon, and oddparity phonon. The vibrational replicas of the main exciton-magnon-phonon lines are due to the quadratic vibronic interaction with odd-parity vibrations. Variations of the intensities and widths of the absorption lines with temperature indicate that these parameters are affected by relaxation and delocalization of the bound states.     

Aspects of simulating metal-insulator transitions in CrS and CoS

The electron-energy structure of CrS and CoS monosulfides at a temperature of 0 K is investigated theoretically using the augmented plane wave approach in combination with the WIEN2k program code. Computations of the total and partial densities of electron states are performed in the LDA + U approximation with allowance for the antiferromagnetic ordering of magnetic moments of 3d-metal atoms. In our models, the optical forbidden band gap E _g in the CrS compound emerges in the monoclinic crystal structure but is missing from the NiAs structure. For the CoS compound in the NiAs structure, computations of the electron-energy structure are performed for both the highand low-spin configurations of the Co atom’s 3d ⁷ shell. The optically forbidden E _g band gap appears in the high-spin configuration with strong correlations of d-electrons, while CoS remains a conductor in the low-spin configuration.     

Central peak in the strontium titanate crystal near the tetragonal-to-cubic phase transition

Raman spectra of the SrTiO3 crystal have been measured in wide temperature (22?C316 K) and frequency (2?C1020 cm^?1) ranges. It has been shown that a central peak appears in low-frequency Raman spectra at temperatures above 70 K. In the spectral geometry with polarization rotation near the temperature T _c = 106 K of the cubic-to-tetragonal phase transition, the central peak exhibits properties of the order-disorder phase transition. Such a behavior of the central peak has been explained by the interaction of the low-frequency soft mode E _g with the relaxation mode near T _c .     

Effect of correlation on electronic properties of NiO: A study from dynamical mean field theory

In order to describe a typical strongly correlated insulator NiO at electronic level, we perform a first principles calculation for temperature effect on electronic properties of NiO using a many-body method merging local density approximation (LDA) with dynamical mean field theory, so called the LDA+DMFT scheme. Band gap and density of states (DOS) are in good agreement with available experimental data and theoretical calculations, and Ni d-e_g and d-t_2g components both exhibit insulating character. Calculated hybridization functions indicate that Ni d-e_g states strongly hybrid with O p states at T = 58 K, 116 K, 145 K, 232 K and 464 K. In order to compare with experimental angle-resolved photoemission spectrum (ARPES), we also calculate momentum-resolved electronic spectrum function, which is established that obvious electronic excitation mainly arises from Ni d-t_2g states at temperature T = 232 K, and the spectrum functions between −0.5 eV and 0.0 eV are almost symmetric about certain k points. Finally, we analyze the effect of temperature on electronic properties of NiO by carrying out LDA+DMFT calculations at T = 58 K, 116 K, 145 K, 232 K and 464 K, respectively. Results show that temperature mainly influences the valence states of spectrum function and hybridization function, in particular high-lying states close to Fermi level. Electronic excitation distributions and spectrum characters in electronic spectrum function are also discussed.     

Temperature dependent g-shift and exchange interaction in β: BIS(N-methyl salicylaldimine) copper (II)

EPR Studies have been performed on β: bis(N-methyl salicylaldimine) copper (II) in the temperature range 300–1.5 K and are compared with EPR of other two isomers α and λ. Only in β-form g_∥ increases and g_⊥ decreases continuously with lowering temperature. This is explained in terms of temperature dependent vibronic mixing of d_z2 state with ground d_x²?y² state.Only at 1.5 K some structures appear. These may be identified as hyperfine structures. Also linewidths increases gradually at low temperatures. These observations show the existence of a positive temperature coefficient of exchange interaction in this salt.     

Magnetic circular dichroism and absorption spectra of Cs2ZrCl6:Mo4+

Absorption and magnetic circular dichroism (M.C.D.) spectra of Mo⁴⁺ in Cs₂ZrCl₆ have been recorded under high resolution at liquid helium temperature over the range 20 000–38 000 cm^-1. All of the bands can be assigned to parity-allowed, ligand-to-metal charge-transfer transitions in both MoCl₆ ^2-(4d²) and an impurity ion which has been identified as MoOCl₅ ^2-(4d¹). The d¹ and d² systems are easily distinguished by the temperature dependence of their M.C.D. spectra, and detailed assignments are proposed for the latter. The absorption spectrum in the region 23 000–26 000 cm^-1 has recently been attributed to a d→d transition in the ion MoCl₆ ^-(4d¹) [1], but the M.C.D. spectrum proves this assignment to be incorrect, and we find no evidence for the presence of this singly-charged species. From the temperature dependence of the M.C.D. spectrum of MoCl₆ ^2-, we estimate the second-order spin-orbit splitting of the E and T ₂ components of the ³ T _1g ground state to be 27 ± 5 cm^-1 with E lowest. The electrostatic splitting of the ³ T _2u and ⁵ T _2u charge-transfer states arising from the t _1u (π + σ) →t _2g excitation is estimated to be close to 515 cm^-1.