Analysis of first and second order strain derivatives of the dielectric constants of alkali halides

Expressions for evaluating the first and second order strain derivatives of the electronic and static dielectric constants of alkali halides are derived. The strain derivatives of the electronic dielectric constant are calculated by taking account of the effect of the crystalline potential on the variation of electronic polarizabilities with volume. The strain derivatives of the static dielectric constant are evaluated adopting the exponential and the inverse power forms for the short range repulsive potential. Two sets of the Born repulsive parameters derived from ultrasonic data and dielectric data are used to evaluate the lattice contribution to the volume dependence of static dielectric constant of alkali halides.     

The theory of SERS on semiconductor and dielectric substrates

It is demonstrated that the reason for SERS on dielectric and semiconductor substrates is enhancement of the electric field in the regions of the tops of surface roughness with a very small radius or a very large curvature. The enhancement depends on the dielectric constant of the substrate and is stronger for a larger dielectric constant. It is indicated that the enhancement on dielectrics and semiconductors is weaker than on metals with the same modulus of the dielectric constant. The result obtained is confirmed by experimental data on the enhancement coefficients obtained for various semiconductor and dielectric substrates.     

Enhanced dielectric constant resolution of thin insulating films by electrostatic force microscopy

Electrostatic force microscopy has been shown to be a useful tool to determine the dielectric constant of insulating films of nanometer thicknesses that play a key role in many electrical, optical and biological phenomena. Previous approaches have made use of simple analytical formulas to analyze the experimental data for thin insulating films deposited directly on a metallic substrate. Here we show that the sensitivity of the EFM signal to changes in the dielectric constant of the thin film can be enhanced by using dielectric substrates with low dielectric constants. We present detailed numerical calculations of the tip-sample electrostatic interaction in the following setup: an insulating thin film, a dielectric substrate (or spacing layer) of known low dielectric constant and a metallic electrode. The EFM sensitivity to the dielectric constant increases with the thickness of the spacing layer and saturates for thicknesses above 100-300 nm, when it is close to that of an infinite medium.     

Temperature dependence of dielectric constant of crystals with fluorite structure

The experimental data on the temperature variation of dielectric constant of six crystals with fluorite structure are analysed using an approach proposed by Havinga and Bosman for ionic crystals. The temperature variation of dielectric constant is resolved in three components related to the thermal expansion, the pressure dependence of dielectric constant and the temperature variation of polarizability (theA, B, C terms). In the present work, theB term is calculated semiempirically, such that the analysis can be extended to crystals like EuF₂ for which high pressure dielectric constant data are not available. For the first time, such calculations have been made for EuF₂ and PbF₂ at elevated temperatures. TheC term, which is related to the temperature variation ofir polarizability is seen to play a dominant role in determining the temperature variation of dielectric constant.     

Optical constants of gold and silver clusters in the spectral range between 1.5 eV and 4.5 eV

Optical constants of gold and silver clusters of various sizes are determined from measurements of their optical extinction in the range from 1.5 eV to 4.5 eV photon energy. For this purpose, it is shown that the optical extinction by spherical clusters satisfies a Kramers-Kronig relation, yielding the second quantity needed for the determination of the complex dielectric constant ε of the cluster material. The dielectric constant is then obtained applying a generalized Newton-Raphson iteration method on the measured extinction data and the Kramers-Kronig data. The results show a clear dependence on cluster size, and also deviations from bulk dielectric constants in the range of the interband transitions. From the various ε-data, a “bulk” dielectric constant of gold and silver is obtained, which fits the positions of the cluster plasmons more precisely than bulk dielectric constants from the literature.     

Dispersion data for open inverted microstrip on RT-duroid and fused quartz substrates

Accurate dispersion data for open inverted microstrip is presented. Two most commonly used substrate materials, namely, RT-duroid (dielectric constant 2.22) and fused quartz (dielectric constant 3.78) are considered. The work is a continuation of the earlier reported data on a similar structure, called suspended microstrip, and will be an useful addition to the millimeter-wave designer's library.     

Pressure and temperature dependence of the static dielectric constant of KBr

The static dielectric constant and the temperature and pressure derivatives of the static dielectric constant of KBr have been measured at several temperatures between 4·3°K and room temperature. The sample was prepared in the form of a three-terminal parallel-plate capacitor and the dielectric constant was determined from measurements of the capacitance with a high precision bridge. The dielectric constant decreases with temperature as does the magnitude of the temperature dependence and the magnitude of the pressure dependence. The data were used to calculate the fixed-volume temperature derivative of the dielectric constant. This quantity, (? ln ε/?T)_v, exhibiting lattice-anharmonicity effects, decreases slightly from its room temperature value as the temperature is lowered, rises to a maximum value at about 33°K and then decreases rapidly at lower temperatures.     

碳纳米管组成二维光子晶体的有效介电常数FDTD数值模拟

把有序排列的碳纳米管看做二维光子晶体,引入平均场方法,先计算单根纳米碳管的有效介电常数,再用时域有限差分方法(FDTD)计算碳管阵列的有效介电常数,其结果与Maxwell-Garnett(MG)法结果相比,更接近实验数据.     

Dielectric properties of CaCu3Ti4O12–silicone resin composites

CaCu₃Ti₄O₁₂ (CCTO)–silicone resin composites with various CCTO volume fractions were prepared. Relatively high dielectric constant (ε=119) and low loss (tanδ=0.35) of the composites with CCTO volume fraction of 0.9 were observed. Two theoretical models were employed to predict the dielectric constant of these composites; the dielectric constant obtained via the Maxwell–Garnett model was in close agreement with the experimental data. The dielectric constant of CCTO–silicone resin composites showed a weak frequency dependence at the measuring frequency range and the loss tangent apparently decreases with increase in frequency.     

分数Poynting-Thomson模型对E7复介电常数的应用

基于分数阶微积分理论和介电分数单元,建立了分数Poynting-Thomson模型,给出了复介电常数的表达式.利用遗传算法结合共轭梯度法,分别求得复介电常数实部和虚部的最优参数,并对E7（主要是氰基联苯化合物）复介电常数实部和虚部的实验数据进行拟合.结果表明能对E7的复介电常数给出很好的描述.另外,由于该法对研究聚合物的复介电常数有广泛的适用性,故该法对研究与E7性质相差很大的聚合物同样适用.     

分数Poynting-Thomson模型对E7复介电常数的应用

基于分数阶微积分理论和介电分数单元,建立了分数Poynting-Thomson模型,给出了复介电常数的表达式.利用遗传算法结合共轭梯度法,分别求得复介电常数实部和虚部的最优参数,并对E7（主要是氰基联苯化合物）复介电常数实部和虚部的实验数据进行拟合.结果表明能对E7的复介电常数给出很好的描述.另外,由于该法对研究聚合物的复介电常数有广泛的适用性,故该法对研究与E7性质相差很大的聚合物同样适用.     

Study on dielectric properties of oil/water random composites

Considering the electric double layers between oil and water, a new “complex model” of dielectric constant of oil/water composites was built up. Starting from the Maxwell–Garnett theory and Bruggeman theory, the effective dielectric constant of oil/water random composites is presented. The nonlinearity of the theory is obvious. The model is especially suited to study the dielectric properties of oil/water composites of different nature. The model is also suited to study the dielectric properties of two-phase random composites with an interfacial shell. The theoretical results on dielectric properties of different kinds of oil/water composites are in good agreement with experimental data.     

Theory of strain derivative of electronic dielectric constant of ionic crysts

A theoretical method for evaluating the strain derivative of the electronic dielectric constant of ionic crystals has been developed. The analysis presented here is based on the shell model and takes account of the exchange charge polarizations. Values of strain derivative of the electronic constant dielectric calculated for 6 alkali halides and MgO show a remarkable agreement with experimental data on photoelastic constants.     

ZnSe体单晶THz波段时域光谱测量及分析

利用透射型THz时域光谱技术,对ZnSe(110)体单晶在THz波段的色散和吸收性质进行了测量和分析。根据Drude理论获得了ZnSe体单晶的静电介电常数及高频介电常数,并观察到ZnSe体单晶在THz波段的多声子吸收效应。     

The dielectric constant associated with direct interband transitions in germanium

An expression for the complex dielectric constant associated with direct interband transitions in germanium has been obtained using a simple model. The model consists of four damped oscillators, and a fit to experimental results for the complex dielectric constant is made to obtain the model parameters, i.e., the oscillator frequencies and damping constants. The results show good agreement with experimental data over a broad range of frequencies.     

Dielectric constant of porous ultra low-k dielectrics by fractal-Monte Carlo simulations

The effective dielectric constant of porous ultra low-k dielectrics is simulated by applying the fractal geometry and Monte Carlo technique in this work. Based on the fractal character of pore size distribution in porous media, the probability models for pore diameter and for effective dielectric constant are derived. The proposed model for the effective dielectric constant is expressed as a function of the dielectric coefficient of base medium and the volume fractions of pores and base medium, fractal dimension for pores, the pore size, as well as random number. The Monte Carlo simulations combined with the fractal geometry are performed. The predictions by the present simulations are shown in good accord with the available experimental data. The proposed technique may have the potential in analyzing other properties such as electrical conductivity and thermal conductivity in porous ultra low-k dielectrics.     

The Born repulsive parameters and dielectric behaviour of alkali halides

The dependence of the Born repulsive parameters of alkali halides on elastic and dielectric data has been discussed. The values of hardness parameter in alkali halides have been recalculated using the revised values of van der Waals energies. It is observed that the two sets of hardness parameter corresponding to elastic and dielectric data differ from each other but become compatible if an effective charge parameter for the ions is introduced. Its usefulness has been demonstrated by calculating the strain derivative of static dielectric constant of alkali halides.     

Dielectric relaxation studies of aqueous sucrose in ethanol mixtures using time domain reflectometry

Time domain reflectometry method has been used in the frequency range of 10 MHz to 10 GHz to determine dielectric properties of aqueous sucrose in ethanol. The dielectric parameters, i.e., static dielectric constant and relaxation time were obtained from the complex permittivity spectra using the non-linear least squares fit method. The Luzar theory is applied to compute the cross-correlation terms for the mixtures. It adequately reproduces the experimental values of static dielectric constants. The Bruggeman model for the non-linear case has been fitted to the dielectric data for mixtures.     

Temperature dependence of the dielectric constant of acrylic dielectric elastomer

The dielectric constant is an essential electrical parameter to the achievable voltage-induced deformation of the dielectric elastomer. This paper primarily focuses on the temperature dependence of the dielectric constant (within the range of 173 K to 373 K) for the most widely used acrylic dielectric elastomer (VHB 4910). First the dielectric constant was investigated experimentally with the broadband dielectric spectrometer (BDS). Results showed that the dielectric constant first increased with temperature up to a peak value and then dropped to a relative small value. Then by analyzing the fitted curves, the Cole–Cole dispersion equation was found better to characterize the rising process before the peak values than the Debye dispersion equation, while the decrease process afterward can be well described by the simple Debye model. Finally, a mathematical model of dielectric constant of VHB 4910 was obtained from the fitted results which can be used to further probe the electromechanical stability of the dielectric elastomers.     

金红石相纳米块材TiO2的介电特性

研究了不同制备压力下成型的以金红石相为主的纳米二氧化钛介电常数的频率谱和温度谱。在频率谱上发现,当频率ω<0.1kHz时,随着测量频率的下降,介电常数迅速升高,低频下的介电常数比高频区的介电常数高1—2个数量级。并且随着样品加压压力的提高,介电常数升高,在与之相对应的介电损耗谱上,随着样品加压压力的提高,损耗值下降,损耗峰向低频区位移。对1.0GPa压力下成型的样品,其介电常数随测量温度的升高,分别在50℃和300℃出现两个峰值。经分析得出,影响金红石相纳米二氧化钛介电行为的微观机制主要为晶粒内部的电子松弛极化和界面中的电偶极矩的转向极化,50℃峰对应于电于松弛极化,而300℃峰则对应于电偶极矩的转向极化。 关键词：