Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction

A variational method is adopted to investigate the properties of shallow impurity states near the interface in a free strained wurtzite GaN/AlxGa1-xN heterojunction under hydrostatic pressure and external electric field by using a simplified coherent potential approximation. Considering the biaxial strain due to lattice mismatch or epitaxial growth and the uniaxial strains effects, we investigated the Stark energy shift led by an external electric field for impurity states as functions of pressure as well as the impurity position, Al component and areal electron density. The numerical result shows that the binding energy near linearly increases with pressure from 0 to 10 GPa. It is also found that the binding energy as a function of the electric field perpendicular to the interface shows an un-linear red shift or a blue shift for different impurity positions. The effect of increasing x on blue shift is more significant than that on the red shift for the impurity in the channel near the interface. The pressure influence on the Stark shift is more obvious with increase of electric field and the distance between an impurity and the interface. The increase of pressure decreases the blue shift but increases the red shift.     

Diffusion transport of negative ions through the interface between cryogenic liquids

A theory of electron bubble transport through the interface between cryogenic liquids is developed based on a new approach to calculating the potential of interaction of a bubble with the interface. The theory is in good agreement with experiments on the electric-field dependence of the potential barrier near the interface between liquid ⁴He, ³He, and vacuum, as well as at the interface between ³He and ⁴He saturated solutions. It is found that the interaction potential dependence on the distance between the electron bubble and the interface is isotopically invariant to three versions of such an interface. The dependence of the lifetime of negative ions in ⁴He and ³He on the temperature and electric field has been determined using the Kramers theory.     

Charge and force acting on a spherical body near a planar electrode in a polarizable conducting medium

A method for calculating electric fields in conducting polarizable media with interface is suggested. An integral equation for the density of surface charge induced at the interface is derived. The value of this density is used to find the field in the volume. The total charge induced at the interface and the force acting on a spherical body touching a planar electrode are calculated. It is found that the total charge and the force are alternating functions of the relative conductivity of the media; that is, both repulsion from and attraction to the electrode are possible depending on the conductivity. The near-electrode force acting on solid particles, bubbles, and drops in an immiscible liquid is studied experimentally.     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas(2DEG) regions in AlGaN/GaN high electron mobility transistors(HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

磁场下半导体GaAs/AlxGa1-xAs异质结中的杂质态

对异质结势采用三角势近似,考虑屏蔽效应,用变分法讨论磁场下半导体异质结系统中的施主杂质态,数值计算了GaAs/AlxGa_1-xAs单异质结系统中杂质态结合能随磁场的变化关系。结果表明,由于外界磁场使界面附近束缚于正施主杂质的单电子波函数的定域性增强,从而对杂质态的结合能有明显的影响,结合能随磁感应强度的增强而显著增大。还计算了杂质位置、电子面密度产生的导带弯曲以及屏蔽效应诸因素对结合能的影响。结果显示,结合能对电子面密度和杂质位置的变化十分敏感,屏蔽则使得有效库仑吸引作用减弱而导致结合能明显下降。     

TiAl/Ti3Al体系剪切变形的分子动力学研究

利用分子动力学方法研究了正化学比的TiAl/Ti3Al双相体系中剪切变形诱发位错形核以及相关结构转变的动态过程以及切变力场对最终结构的影响.研究发现,在TiAl/Ti3Al双相体系中剪切变形诱发黏滞-滑移式的滑移行为;界面在其中起到了传递能量、均衡协变的作用,界面两侧的异相结构保留了单相形变特征.六角密堆积(HCP)-Ti3Al部分各原子层较长时间内呈整体剪切协变,其后形变分化为应力集中诱发层错区和初始完整结构回复区;而面心立方(FCC)-TiAl部分因刚性较大仅存在微协变,其后局部受力区直接诱发相邻原子层间相对滑移,发生FCC向HCP结构转变.变形结构方面,HCP-Ti3Al部分在剪切力较大区域形成连续且稳定的FCC堆垛,近界面区FCC薄层与HCP相交替并存;而FCC-TiAl部分内禀层错和孪晶共存,当力场增大时形成亚稳HCP结构.     

Acoustic scattering by a three-dimensional elastic object near a rough surface

The ensemble-averaged field scattered by a smooth, bounded, elastic object near a penetrable surface with small-scale random roughness is formulated. The formulation consists of combining a perturbative solution for modeling propagation through the rough surface with a transition (T-) matrix solution for scattering by the object near a planar surface. All media bounding the rough surface are assumed to be fluids. By applying the results to a spherical steel shell buried within a rough sediment bottom, it is demonstrated that the ensemble-averaged "incoherent" intensity backscattered by buried objects illuminated with shallow-grazing-angle acoustic sources can be well enhanced at high frequencies over field predictions based on scattering models where all environmental surfaces are planar. However, this intensity must compete with the incoherent intensity scattered back from the interface itself, which can defeat detection attempts. The averaged "coherent" component of the field maintains the strong evanescent spectral decay exhibited by flat interface predictions of shallow-angle measurements but with small deviations. Nevertheless, bistatic calculations of the coherent field suggest useful strategies for improving long-range detection and identification of buried objects.     

Single pulse near field study on a Co(3 nm)/Cu(6 nm)/Co(20 nm) multilayer structure by using a femtosecond laser

Single pulse near field study on a Co(3 nm)/Cu(6 nm)/Co(20 nm) multilayer structure was experimentally investigated with a laser pulse width of 200 fs at a wavelength of 775 nm. For the near field experiments, we have used polystyrene colloidal particles of 700 nm diameter deposited by spin coating on top of the multilayer structure, as well on top of Co (50 nm) and Cu (50 nm) thin films. The diameter and the morphologies of the holes were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). We have estimated the fluence thresholds values for the near field and discuss their values in respect with the enhancement factor of the intensity of the electromagnetic field due to the use of the colloidal particles. We compare the depths and the widths of the holes obtained at the same peak laser fluence for the Co thin film (50 nm), Cu thin film (50 nm) and Co(3 nm)/Cu(6 nm)/Co(20 nm) multilayer structure. Depending on the laser fluence, the ablation depth can reach the first, the second, or the third layer. Theoretical estimations of the intensity enhancement were done using the finite-difference time-domain (FDTD) by using the RSoft software. This type of a selective distribution of the ablation depth, in the near field regime, of a planar metal/dielectric interface can open new perspective in the excitation of propagating surface plasmons.     

Confinement-induced entropic recoil of single DNA molecules in a nanofluidic structure

The behavior of DNA molecules is observed in a nanofluidic device near the interface of two regions that produce different configuration entropies. An electric field is applied to drive the molecules partway across the interface. Upon removal of the field, the molecules recoil to the higher-entropy region with a profile characteristic of a force localized to the interface and independent of length. This is consistent with a confinement-mediated entropic force, distinct from the well-known entropic elasticity common to all polymers. An estimate of the hydrodynamic drag is used to produce a lower bound for the force. The phenomenon can be exploited to separate long-strand polyelectrolytes according to length.     

TiAl/Ti3Al体系剪切变形的分子动力学研究

利用分子动力学方法研究了正化学比的TiAl/Ti₃Al双相体系中剪切变形诱发位错形核以及相关结构转变的动态过程以及切变力场对最终结构的影响.研究发现,在TiAl/Ti₃Al双相体系中剪切变形诱发黏滞-滑移式的滑移行为;界面在其中起到了传递能量、均衡协变的作用,界面两侧的异相结构保留了单相形变特征.六角密堆积（HCP）-Ti₃Al部分各原子层较长时间内呈整体剪切协变,其后形变分化为应力集中诱发层错区和初始完整结构回复区;而面心立方（FCC）-TiAl部分因刚性较大仅存在微协变,其后局部受力区直接诱发相邻原子层间相对滑移,发生FCC向HCP结构转变.变形结构方面,HCP-Ti₃Al部分在剪切力较大区域形成连续且稳定的FCC堆垛,近界面区FCC薄层与HCP相交替并存;而FCC-TiAl部分内禀层错和孪晶共存,当力场增大时形成亚稳HCP结构. 关键词： 3Al')" href="#">TiAl/Ti₃Al 分子动力学模拟 剪切变形 层错结构     

Aharonov-Bohm effect revisited

The Aharonov-Bohm (AB) effect shows that electromagnetic potentials can influence an electron in a field-free region. The single-slit and double-slit electron diffraction patterns are explicitly calculated here by the Feynman path integral method for different configurations of the magnetic field in order to compare the effect of the vector potential with the effect of the magnetic field. When an electron passes through a magnetic field behind the slits, the whole diffrection pattern is shifted due to the Lorentz force. When an electron passes through two slits with magnetic flux confined to a small cylinder between them, the double-slit diffraction pattern is shifted within the single-slit diffraction envelope. The asymmetric diffraction pattern corresponds to a nonzero average displacement and momentum of the electron even though the field exerts no force on the electron. This behavior can be understood on the basis of a quantum-mechanical interference effect. The classical limit of the electron diffraction patterns is taken to obtain the classical particle distributions. The effect of the potential vanishes in the classical limit, while the effect of the magnetic field persists because of the Lorentz force.     

Surface electromagnetic waves in thin-layer biaxial structure in a magnetic field

The conditions for the existence of surface electromagnetic waves at the planar interface between a homogeneous medium (vacuum) and a thin-layer periodic structure consisting of alternating semiconductor and dielectric layers in an external magnetic field have been investigated. This structure represents an optically biaxial crystal with the effective permittivity tensor components dependent both on the geometric parameters of the structure and on the physical characteristics (magnetic field strength, frequency, and thicknesses of the layers). It has been shown that the propagation of surface electromagnetic waves localized near the interface can occur in the thin-layer biaxial structure within specific ranges of frequencies and external magnetic field strengths.     

An exact solution to the problem of current transport through the grain boundary in a metal

The problem of electrical resistance of a planar boundary between two crystalline grains of a polycrystalline metal is solved analytically. The solution is derived using the Case method. The electric field and the electron distribution function are represented in the form of an eigenfunction expansion of the corresponding characteristic equation. It is demonstrated that the electric field at the interface increases drastically when the Debye frequency substantially exceeds the frequency of electron collisions in the bulk of the metal. It is found that the resistance of the grain boundary does not depend on the frequency of electron collisions in the bulk, i.e., on their mean free path.     

铝-金刚石界面电子特性与界面肖特基势垒的杂化密度泛函理论HSE06的研究

宽带隙半导体金刚石具有突出的电学与热学特性,近年来,基于金刚石的高频大功率器件受到广泛关注,对于金属-金刚石肖特基结而言,具有较高的击穿电压和较小的串联电阻,所以金属-金刚石这种金半结具有非常好的发展前景.本文通过第一性原理方法去研究金属铝-金刚石界面电子特性与肖特基势垒的高度.界面附近原子轨道的投影态密度的计算表明:金属诱导带隙态会在金刚石一侧产生,并且具有典型的局域化特征,同时可以发现电子电荷转移使得Fermi能级在金刚石一侧有所提升.电子电荷在界面的重新分布促使界面形成新的化学键,使得金属铝-氢化金刚石形成稳定的金半结.特别地,我们通过计算平均静电势的方法得到金属铝-氢化金刚石界面的势垒高度为1.03 eV,该值与金属诱导带隙态唯像模型计算的结果非常接近,也与实验值符合得很好.本文的研究可为金属-金刚石肖特基结二极管的研究奠定理论基础,也可为金刚石基金半结大功率器件的研究提供理论参考.     

Disturbance of spin equilibrium by current through the interface of noncollinear ferromagnets

Boundary conditions are derived that determine the penetration of spin current through an interface of two noncollinear ferromagnets with an arbitrary angle between their magnetization vectors. We start from the well-known transformation properties of an electron spin wave functions under the rotation of a quantization axis. It allows directly find the connection between partial electric current densities for different spin subbands of the ferromagnets. No spin scattering is assumed in the near interface region, so that spin conservation takes place when electron intersects the boundary. The continuity conditions are found for partial chemical potential differences in the situation. Spatial distribution of nonequilibrium electron magnetizations is calculated under the spin current flowing through a contact of two semi-infinite ferromagnets. The distribution describes the spin accumulation effect by current and corresponding shift of the potential drop at the interface. These effects appear strongly dependent on the relation between spin contact resistances at the interface.     

Liquid Flow in a Porous Channel with Electrokinetic Effects

In this paper, a fully developed laminar flow in a porous channel between two paralleled flat plates in the presence of a double layer electric field is analyzed. The linear Poisson-Boltzmann equation is suggested to model the double layer electric field near the solid-liquid interface. The equation of motion is extended by including the electrical body force generating from the double layer field and then solved analytically. Different from previous models, our proposed one is continuous in the whole flow field and matches commonly-accepted models in the field of fluid mechanics.Besides, the effects of various physical parameters such as the zeta potential, the electrokinetic separation distance, and the ratio of the streaming current to conduction current on the velocity, the pressure, the apparent viscosity of the fluid,as well as the streaming potential are discussed. Physical explanations on the changing trends of those physical quantities with various parameters are given.     

Liquid Flow in a Porous Channel with Electrokinetic Effects

In this paper, a fully developed laminar flow in a porous channel between two paralleled flat plates in the presence of a double layer electric field is analyzed. The linear Poisson-Boltzmann equation is suggested to model the double layer electric field near the solid-liquid interface. The equation of motion is extended by including the electrical body force generating from the double layer field and then solved analytically. Different from previous models, our proposed one is continuous in the whole flow field and matches commonly-accepted models in the field of fluid mechanics. Besides, the effects of various physical parameters such as the zeta potential, the electrokinetic separation distance, and the ratio of the streaming current to conduction current on the velocity, the pressure, the apparent viscosity of the fluid, as well as the streaming potential are discussed. Physical explanations on the changing trends of those physical quantities with various parameters are given.     

Pressure potential and stability analysis in an acoustical noncontact transportation

Near field acoustic traveling wave is one of the most popular principles in noncontact manipulations and transportations. The stability behavior is a key factor in the industrial applications of acoustical noncontact transportation. We present here an in-depth analysis of the transportation stability of a planar object levitated in near field acoustic traveling waves. To more accurately describe the pressure distributions on the radiation surface, a 3D nonlinear traveling wave model is presented. A closed form solution is derived based on the pressure potential to quantitatively calculate the restoring forces and moments under small disturbances. The physical explanations of the effects of fluid inertia and the effects of non-uniform pressure distributions are provided in detail. It is found that a vibration rail with tapered cross section provides more stable transportation than a rail with rectangular cross section. The present study sheds light on the issue of quantitative evaluation of stability in acoustic traveling waves and proposes three main factors that influence the stability: (a) vibration shape, (b) pressure distribution and (c) restoring force/moment. It helps to provide a better understanding of the physics behind the near field acoustic transportation and provide useful design and optimization tools for industrial applications.