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1.
Superconductivity and crystal structure data are reported for a series of ternary CuxMo3S4 samples with 0 ≤ x ≤ 1 which were prepared by anodic oxidation of Cu1.0Mo3S4. A phase with the composition Cu0.5Mo3S4 was found to have rhombohedral lattice parameters aR = 6.447(5) A? and αR = 93.74(4) ° and a superconducting critical temperature Tc = 5.8 K. The dependence of Tc on pressure for Cu0.5Mo3S4 has been measured between 0 and 19 kbar.  相似文献   

2.
A Mössbauer measurement of the pressure dependence of the Néel temperature in FeF2 is reported. Up to the maximum pressure of 50 kbar TN increases at the rate of 0.27 ± 0.03°K/kbar. When this pressure dependence is converted to volume dependence, the result, d In TN/d In V = 3.2 ± 0.3, is found to obey the “103 rule” established by Bloch for a wide variety of antiferromagnetic insulators.  相似文献   

3.
The temperature dependence of the electrical conductivity of magnetite was measured under hydrostatic pressure up to 18.4 kbar. It is found that the temperature of the conductivity maximum in the high temperature phase is more rapidly reduced by pressure (dTm/dP = -4.1 K/kbar) than the Verwey temperature (dTv/dP = -0.27 K/kbar). The discontinuous change of the conductivity at Tv appears to increase with applied pressure as a result of a lowering of Tm.  相似文献   

4.
The hydrostatic pressure dependence of magnetic properties are reported for antiferromagnetic RSb where R = Nd, Gd, Tb, Dy, HoorEr. Measurements were made for pressures 0 ≤ p ≤ 10 kbar, magnetic fields 0 ≤ H0 ≤ 60 kG, and temperatures 1.4 K ≤ T ≤ 35 K. dTN/dP shows no systematic trend and ranges from -0.038 K/kbar for DySb to + 0.21 K/kbar for NdSb. The magnetic properties of DySb are strongly P-dependent, whereas those of HoSb are P-independent, but sample-dependent.  相似文献   

5.
A semiconductor-metal transition in the electrical resistance of NiS2, which has been suggested to be a Mott transition, is observed with decreasing temperature under pressure up to 44 kbar. The transition temperature increases with pressure with a slope of dTdP = 6 ± 1 K/kbar. The activation energy in a semiconducting region is found to decrease with increasing pressure and to vanish at about 46 kbar. The critical pressure and temperature are predicted to be 46 ± 2 kbar and 350 ± 20 K.  相似文献   

6.
Photoluminescence measurements on GaSb samples were carried out at low temperatures (2 – 5 K) and high pressures (0 – 9 kbar). The energy shift of the direct gap was determined: dEΓ/dP= 14.5± 0.3 meV/kbar. At pressures above 8 kbar the spectra showed additional structure from the indirect L-conduction band minima. The energy shift of the L-conduction bands were determined: dEL/dP = 5.5± 1. meV/kbar. From these data the critical pressure for the inversion of the two conduction bands was calculated: phc = 10.5 ± 1. kbar.  相似文献   

7.
For the linear chain system Y2[Pt(CN)4]3·21H2O a pressure induced phase transition is observed by emission spectroscopy. At ptrans=(5±0.5) kbar and T=295 K the compound undergoes a first order phase transition, in the course of which the intra-chain Pt-Pt distance R shrinks by ΔR≈-0.03 A?. An approximate value had already been found at standard pressure for a temperature induced phase transition (Ttrans=218 K).  相似文献   

8.
Using magnetic susceptibility measurements, we have studied the pressure dependence of the magnetic transition fields of powder samples of antiferromagnetic (C2H5NH3)2CuC?4, for hydrostatic pressures up to P ~ 7 kbar. The spin-flop field H1 decreases linearly with pressure (dH1dP= ?(20±4)Gkbar), while the field corresponding to the paramagnetic transition H2 shows an increase, ~ 70% for P~7 kbar, that is roughly quadratic with P.  相似文献   

9.
The Glauber dynamics of an Ising spin glass with infinite-range interactions and additional static field, h, is investigated near the freezing temperature, Tf. We obtain critical slowing down at and below the de Almeida-Thouless instability line, hc(T), to order (1?T/Tf)3 with algebraic decay of the spin correlations ~t, where ν=12 at Tf and ν≤12 for T<Tf.  相似文献   

10.
Measurements of the temperature dependence of the upper critical field, Hc2(T), for a series of V100?xGax materials are presented for 20.5 ≤ × ≤ 29.6. Fits of the data to conventional theory for a paramagnetically limited, dirty, type II superconductor show: 1) a maximum in Tc and Hc2(0) for x ? 25; 2) a constant (dHc2dT)T = Tc for x ≤ 25; 3) a slowly increasing value of λso with increasing x up to x ~ 25; and 4) good agreement with stoichiometric ordered and thermally disordered V3Ga. Above x ? 25 broader transitions are observed. For x = 25, Tc = 15.3 K, (dHc2dT)T=Tc = 4.3 TK, λso = 0.3 and Hc2(0) = 23.4 tesla. The effects of inclusion of strong-coupling in the theory are discussed briefly.  相似文献   

11.
Measurements of the pressure dependence of the low-frequency dielectric constant ? and high pressure, low temperature X-ray diffraction photographs on (CH3)4 (TMMC) have shown that the low temperature P21aa phase of TMMC transforms to the low temperature P21m-like phase of (CH3)4 NCdCl3 (TMCC) at high pressure. The pressure-temperature phase diagram has been deliniated from the triple point at 2.0 kbar and 137° K to lower temperatures, and, from changes in the dielectric constant anomaly, it appears that another triple point may occur at ~ 1.0 kbar and 95° K. The pressure and temperature dependences of ? together with the observed doubling of the unit cell suggest that the P21a low temperature phase of TMMC may be antiferroelectric.  相似文献   

12.
The Raman spectrum of crystalline As4S3 has been investigated as a function of temperature from 4 to 430 K at ambient pressure, and as a function of pressure to 70 kbar at ambient temperature. The external mode frequencies which appear clearly separated from the internal modes exhibit stronger pressure and temperature sensitivity compared to the latter modes. At the β-As4S3 to α-As4S3 phase transition near 410 K, the external modes change discontinuously indicating a first-order phase transition. The internal mode frequencies remain practically unaffected. The dvdP and dvdT data are analyzed using well established approaches. Application of non-hydrostatic pressure (>60 kbar) appears to destroy the crystallinity of As4S3.  相似文献   

13.
We have measured the dc resistance, R, of n-type NbO2 single crystals in the semiconducting, distorted rutile-structured phase at temperatures from T = 196 K to 410 K using hydrostatic pressures, P, from one to 6000 atm. The resistivity, divided by the temperature, increases exponentially with 1T and the resistance increases linearly with PT at different rates along the a- and c-axes. We find that conduction is due to thermally-activated, adiabatic hopping of small polarons and obtain values and pressure dependences for the vibrational frequency and polaronic energies involved. A discussion of our results is given.  相似文献   

14.
Electrical resistivity measurements under pressure have been carried out on the high-temperature superconductor YBa2Cu3O7 – as a function of temperature T between 1 and 300 K at various pressures between 8 kbar and 149 kbar. The superconducting transition temperature Tc increases almost linearly with pressure at the rate dTc/dP - 0.13 K/kbar. The onset of Tc, defined as the temperature at which(T) drops to 90% of its extrapolated normal state value, increases from 95 K at 8 kbar to 107 K at 149 kbar. These results suggest that higher pressures will yield yet higher values of Tc.  相似文献   

15.
姚玉书  陈红  李永津 《物理学报》1984,33(9):1278-1281
在流体静压力到10kbar范围内,采用DTA技术研究了压力对NH4IO3及其固溶体Kx(NH4)1-xIO3的相变温度(Tc)的影响。实验结果表明,虽然固溶体的相变温度Tc随K+组分的增加而减小,但是dTc/dP值却同K+组分无关。这意味着在压力下IO3-离子的伸长对Tc随压力增加起主要作用。 关键词:  相似文献   

16.
Nuclear pure quadrupole resonance has been observed in single crystal gallium as a function of hydrostatic pressure up to 7 kbar at temperatures of 77, 198 and 273 K. The resonance frequency vQ increases linearly with pressure and the slope (δvOδP)T is 13.7, 15.5 and 16.3 Hz/bar at 77, 198 and 273 K respectively. The asymmetry parameter decreases nonlinearly with pressure. Using compressibility and thermal expansion data, the volume dependence of the major principle component of the electric field gradient was deduced. The principal components Kx, Ky and Kz of the Knight shift tensor have been measured as a function of pressure to 6 kbar at 77 K. The isotropic and anisotropic components of the Knight shift were deduced as a function of pressure, and Kiso is found to vary with volume as V4.95 ± 0.80.  相似文献   

17.
The heat capacity of (C6H11NH3) CuCl3 (CHAC) has been measured for 0.45 < T < 60 K. Three-dimensional ordering is observed at T = 2.214 K. The data in the paramagnetic region can be described by a ferromagnetic S = 12 Heisenberg linear chain model system with J/k = +45 ± 5K.  相似文献   

18.
The sound velocities in GeS2 glass have been measured by means of ultrasonic interferometry as a function of temperature or pressure up to 1.8 kbar. The bulk modulus Ks = 117.6 kbar and shear modulus G = 60.60 kbar were obtained for GeS2 glass at 15°C and 1 atm. The temperature derivatives of both sound velocities and elastic moduli are negative :
(1?T)
p =
?1.54 × 10?4 kmsec
°C,
(1?T)
p =
?1.27× 10?4 kmsec
°C and
(?Ks?T)
p =
?1.27 × 10?2kbar°C
,
(?G?T)
p = ?1.23 × 10?2 kbar/°C,
(?Y?T)
p = ?2.93 × 10?2 their pressure derivatives are positive:
(1?P)
T = 4.43× 10?2km/kbar,
(1?P)
T =
0.633 × 10?2kmkbar
and (?Ks?P0)T=6.81,
(?G?P)T
= 1.03, (?Y?TT= 3.57. The Grüneisen parameter, γth= 0.298, and the second Grüneisen parameter, δs = 3.27, have also been calculated from these data. The elastic behavior of GeS2 glass has proved to be normal despite the structural similarity among the tetrahedrally coordinated SiO2, GeO2 and GeS2 glasses.  相似文献   

19.
Dielectric susceptibility and ferroelectric hysteresis measurements on TSCC show that the 2nd-order paraelectric-ferroelectric (PE-FE) phase boundary beginning at (130.8 K, 1 bar) runs with pronounced curvature to (176.8 K, 5.03 kbar), where a new phase of low dielectric susceptibility appears. This phase is hypothesized to be antiferroelectric (AFE) with 3 possible structures: orthorhombic (P212121, piezoelectric) or monoclinic (P21a or P21n, centrosymmetric). The FE-AFE phase boundary was determined down to (81.0 K, 2.60 kbar) and the PE-AFE boundary up to (225.5 K, 6.82 kbar). Both the FE-AFE and PE-AFE transitions are of 1st order over the range studied.  相似文献   

20.
Proton spin-lattice relaxation times T1 and T have been measured in NH4IO4 between 150 K and 50 K. The relaxation in the rotating frame was strongly nonexponential between 70 K and 53 K, which supports the tunneling assisted relaxation model of NH+4 in the rotating frame. The tunneling frequency was determined to be Λ0 =1.5 MHz.  相似文献   

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