注氮GaAs中的深能级及其对自由载流子的补偿

详细研究了注氮n型GaAs中深的和浅的杂质缺陷的电学性质。深能级瞬态谱(DLTS)技术测量表明,能量为140keV和剂量为1×10¹³cm^-2的氮离子注入并经800℃退火30min的GaAs中存在四个电子陷阱,E₁(0.111),E₂(0.234),E₃(0.415),E₄(0.669)和一个空穴陷阱H(0.545),而在能量为20keV和剂量为5×10^{14关键词：}     

Divacancy complexes induced by Cu diffusion in Zn-doped GaAs

Positron annihilation spectroscopy was applied to investigate the nature and thermal behavior of defects induced by Cu diffusion in Zn-doped p-type GaAs crystals. Cu atoms were intentionally introduced in the GaAs lattice through thermally activated diffusion from a thin Cu capping layer at 1100 °C under defined arsenic vapor pressure. During isochronal annealing of the obtained Cu-diffused GaAs in the temperature range of 450?850 K, vacancy clusters were found to form, grow and finally disappear. We found that annealing at 650 K triggers the formation of divacancies, whereas further increasing in the annealing temperature up to 750 K leads to the formation of divacancy-copper complexes. The observations suggest that the formation of these vacancy-like defects in GaAs is related to the out-diffusion of Cu. Two kinds of acceptors are detected with a concentration of about 10¹⁶ ? 10¹⁷ cm^?3, negative ions and arsenic vacancy copper complexes. Transmission electron microscopy showed the presence of voids and Cu precipitates which are not observed by positron measurements. The positron binding energy to shallow traps is estimated using the positron trapping model. Coincidence Doppler broadening spectroscopy showed the presence of Cu in the immediate vicinity of the detected vacancies. Theoretical calculations suggested that the detected defect is V _Ga V _As-2Cu_Ga.     

Properties of ion implanted silicon,sulfur, and carbon in gallium arsenide

Work is described in which chromium-doped semi-insulating gallium arsenide has been successfully doped n-type with ion implanted silicon and sulfur, and p-type with ion implanted carbon. A dilute chemical etch has been employed in conjunction with differential Hall effect measurements to obtain accurate profiles of carrier concentration and mobility vs. depth in conductive implanted layers. This method has so far been applied to silicon-and sulfur-implanted layers in both Cr-doped semi-insulating GaAs and high purity vapor grown GaAs. In the case of sulfur implants, a strong diffusion enhancement has been observed during the annealing, presumably due to fast-diffusing, implantation-produced damage. Peak doping levels so far obtained are about 8 × 10¹⁷ electrons/cm³ for silicon implants and 2 × 10¹⁷ electrons/cm³ for sulfur implants. Mobility recovery has been observed to be complete except in regions near the surface which are heavily damaged by the implantation.     

Superconductivity of vapour quenched beryllium and beryllium-based alloys

The properties of Be films, quench-condensed upon a³He cooled substrate, have been investigated by resistance and tunneling measurements. The superconducting transition temperature,T _c , of Be films increased with thickness and a thick film limit of 9.95 K could be estimated. Alloying with Al or Pb decreasedT _c. The ratios between energy gaps andT _c 's indicated that Be is a weak coupling superconductor, and no phonon induced structure could be traced in tunneling curves neither in pure Be nor in the Be based alloys. Resistance change during annealing as well as superconducting data indicated that the vapour quenched Be films were amorphous as deposited.     

Impurity lattice sites after implantation of Te and Sb in GaAs: Search for the DX centre

¹¹⁹Sn Mössbauer Spectroscopy has been applied to study the nearest environment of radioactive^119mTe and¹¹⁹Sb atoms implanted into GaAs. After a low-dose implantation and annealing above 300°C the impurity atoms are found at As sites. High-dose implantation and annealing above 600°C results in the population of at least two additional sites; these are clearly different for Te and Sb. No evidence is found for the population of DX-centres. A likely possibility is the formation of coherent Ga₂Te₃ precipitates.     

Optical properties of laser-processed In x Ga1−x As

Various spots in GaAs, In-diffused with the 1.064 μm line of pulsed Nd:YAG laser with several energy densities, have been characterized and compared with samples prepared by the conventional rapid thermal annealing method. Of the energy densities used, the spot processed with an energy density of 7 J/cm² shows In _x Ga_1?x As phases with an indium concentration of 60% and below. An abrupt boundary in the indium concentration is observed at the edge of the laser-annealed spot. The diffusion depth is found to be less than 1000 Å. The spot processed with an energy density of 14 J/cm² shows considerable damage from the irradiation resulting in strain in the lattice. The samples prepared by the thermal annealing method show similar results to the laser-diffused samples. However, these thermally annealed samples suffer from arsenic loss unlike the laser-processed samples. It can be concluded that laser-induced alloying of indium into GaAs can be achieved with less arsenic loss than the thermal annealing method.     

Characterization of silicon doped with sodium upon high-voltage implantation

The depth distribution profiles of sodium atoms in silicon upon high-voltage implantation (ion energy, 300 keV; implantation dose, 5 × 10¹⁴ and 3 × 10¹⁵ cm ^?2) are investigated before and after annealing at temperatures in the range T _ann = 300–900°C (t _ann = 30 min). Ion implantation is performed with the use of a high-resistivity p-Si (ρ= 3–5 kΩ cm) grown by floating-zone melting. After implantation, the depth distribution profiles are characterized by an intense tail attributed to the incorporation of sodium atoms into channels upon their scattering from displaced silicon atoms. At an implantation dose of 3 × 10¹⁵ ions/cm², which is higher than the amorphization threshold of silicon, a segregation peak is observed on the left slope of the diffusion profile in the vicinity of the maximum after annealing at a temperature T _ann = 600°C. At an implantation dose of 5 × 10¹⁴ ions/cm², which is insufficient for silicon amorphization, no similar peak is observed. Annealing at a temperature T _ann = 700°C leads to a shift of the profile toward the surface of the sample. Annealing performed at temperatures T _ann ≥ 800°C results in a considerable loss of sodium atoms due to their diffusion toward the surface of the sample and subsequent evaporation. After annealing, only a small number of implanted atoms that are located far from the region of the most severe damages remain electrically active. It is demonstrated that, owing to the larger distance between the diffusion source and the surface of the sample, the superficial density of electrically active atoms in the diffusion layer upon high-voltage implantation of sodium ions is almost one order of magnitude higher than the corresponding density observed upon low-voltage implantation (50–70 keV). In this case, the volume concentration of donors near the surface of the sample increases by a factor of 5–10. The measured values of the effective diffusion parameters of sodium at annealing temperatures in the range T _ann = 525–900°C are as follows: D ₀ = 0.018 cm²/s and E _a = 1.29 eV/kT. These parameters are almost identical to those previously obtained in the case of low-voltage implantation.     

Atomistic mechanisms of dopant-induced multiple quantum well mixing and related phenomena

We discuss mechanisms of Ga self-diffusion and impurity diffusion in GaAs, and of layer mixing enhancement in GaAs/AlGaAs multiple quantum wells (MQWs). Ga self-diffusion and Ga-Al interdiffusion are governed by the triply negatively charged Ga vacancies, V _Ga ^3– , under intrinsic and n-doping conditions, and by doubly positively charged Ga self-interstitials, I _Ga ²⁺ , under heavy p-doping conditions. The mechanisms responsible for enhancing MQW mixing are the Fermi-level effect for the n-dopants Si and Te, and the combined effects of the Fermi-level and the dopant diffusion-induced nonequilibrium point defects for the p-dopants Zn and Be. For n-type GaAs the donor Si atoms diffuse primarily also via V _Ga ^3– . For p-type GaAs the interstitial-substitutional impurities Zn and Be diffuse via the kickout mechanism and induce a supersaturation and an undersaturation in the concentrations of I _Ga ²⁺ , respectively, under indiffusion and outdiffusion conditions.     

Nitrogen implantation in GaAs1−xPx (x=0.4; 0.65)

Nitrogen ions were implanted in GaAs_1−xP_x (x=0.4; 0.65) at room temperature at various doses from 5×10¹² cm⁻² to 5×10¹⁵ cm⁻² and annealed at temperatures from 600°C up to 950°C using a sputtered SiO₂ encapsulation to investigate the possibility of creating isoelectronic traps by ion implantation. Photoluminescence and channeling measurements were performed to characterize implanted layers. The effects of damage induced by optically inactive neon ion implantation on photoluminescence spectrum were also investigated. By channeling measurements it was found that damage induced by nitrogen implantation is removed by annealing at 800°C. A nitrogen induced emission intensity comparable to the intensity of band gap emission for unimplanted material was observed for implanted GaAs_0.6P_0.4 after annealing at 850°C, while an enhancement of the emission intensity by a factor of 180 as compared with an unimplanted material was observed for implanted GaAs_0.35P_0.65 after annealing at 950°C. An anomalous diffusion of nitrogen atoms was found for implanted GaAs_0.6P_0.4 after annealing at and above 900°C.     

Investigation of 4H-SiC epitaxial layers implanted by Al ions

4H-SiC epitaxial layers 26 μm thick with N _d ?N _a = 1 × 10¹⁵ cm^?3 grown by the CVD method on 4H-SiC commercial wafers were implanted by Al ions with energy of 100 keV and a dose of 5 × 10¹⁶ cm^?2. To produce the p ⁺?n junction, a rapid thermal annealing for 15 s at 1700°C was used. The obtained samples were studied by the local cathodoluminescence, X-ray diffractometry, and transmission electron microscopy. It was established that under specified conditions of implantation, the width of a region with a high content of radiation defects exceeded by two orders of magnitude, the depth of the projective range of Al ions and was equal to 40 μm. This result is explained by the combined contribution of the radiation enhanced defect diffusion and long-range action effect. A short-term high-temperature annealing resulted in the recrystallization of the specimen surface layer and enhancement of CVD layer structure.     

Effect of radiation annealing on activation of silicon implanted in gallium arsenide

We have investigated the profile of²⁸Si implanted in GaAs obtained by radiation annealing using an electron beam (P=7.6 W/cm², E=10 keV, t=10 sec, T≅750°C) and thermal annealing in a furnace (T=800°C, t=30 min). It was found that the radiation annealing provides diffusion redistribution of the impurities and a high degree of electrical activation. Tomsk Polytechnic University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 89–92, July, 1998.     

Quadrupole interaction at Ta and lattice location of Hf in Be

The time-differential perturbed angular correlation technique (TDPAC) has been applied to the 482 keV excited state of¹⁸¹Ta, to determine the nuclear electric quadrupole interaction (QI) at Ta in Be. Sources were prepared by ion-implantation of¹⁸¹Hf in Be. Particle channeling measurements have revealed that. Hf impurities implanted in Be reside primarily at the tetrahedral interstitial site. The fundamental QI frequency obtained for Ta at this interstitial site in Be is |v _Q| =e ² qQ/h = 227.0 ± 2.2 MHz which corresponds to an electric field gradient |eq|=(3.71±0.15)×10¹⁷ V/cm². This result is discussed in terms of results for Cd impurities in the same system and the systematics of the impurity QI in metals.     

Application of mechanical scanning to ion implantation

Abstract

Atomic depth profiles from Be-implanted Si have been examined as a function of implant fluence and annealing, and the results have been correlated with theoretically calculated implantation induced damage profiles. The Be atomic depth profiles were obtained by secondary ion mass spectrometry (SIMS) techniques from samples implanted at 300 keV to fluences ranging from 2 × 10¹² to 10¹⁵ cm^?2. Subsequent to annealing at 600°C for 30 min, the Be SIMS profiles exhibited anomalous redistribution effects. The Be profiles obtained from the annealed samples had the same general features as the depth distribution of implant energy deposited into damage, based on Brice's¹ calculations. The correlation of the SIMS atomic profiles and the theoretical damage profiles indicated that Be “decorates” the implantation induced damage regions while redistributing during the annealing process.     

Formation of Cu nanoparticles in GaAs using MeV ion implantation followed by thermal annealing

Analytical electron microscopy, high-resolution X-ray diffraction and combined Rutherford backscattering spectrometry and channeling experiments have been used to investigate the radiation damage and the effect of post-implantation annealing on the microstructure of GaAs(100) single crystals implanted with 1.00 MeV Cu⁺ ions to a dose of ≈ 3×10¹⁶ cm^-2 at room temperature. The experiments reveal the formation of a thick and continuous amorphous layer in the as-implanted state. Annealing up to 600 °C for 60 min does not result in the complete recovery of the lattice order. The residual disorder in GaAs has been found to be mostly microtwins and stacking fault bundles. The redistribution of implanted atoms during annealing results in the formation of nano-sized Cu particles in the GaAs matrix. The X-ray diffraction result shows a cube-on-cube orientation of the Cu particles with the GaAs lattice. The depth distribution and size of the Cu particles have been determined from the experimental data. A tentative explanation for these results is presented. Received: 15 February 1999 / Accepted: 18 February 1999 / Published online: 28 April 1999     

Superconductivity of niobium nitride single crystals after implantation of carbon and nitrogen

Single crystals of δ-NbN_0.85 with a superconducting transition temperature T_c of 14.3 K were implanted with nitrogen and carbon ions at room temperature and subsequently annealed at high temperatures. Implantation was also performed at high substrate temperatures. After implantation at about 920°C maximum T_c-values of 16.5 and 17.8 K were obtained with N- and C-ions respectively. Disorder observed after room temperature implantation consisted of displaced Nb-atoms which could not be completely annealed in an isochromous annealing process up to 1000°C. For annealing temperatures above 1100°C nitrogen diffusion out of the implanted layers resulted in a reduction of T_c.     

Amorphous GaP produced by ion implantation

Two types of non-crystalline states (“disordered” and “amorphous”) of GaP were produced by using ion implantation and post annealing. A structural-phase-transition-like annealing behaviour from the “disordered” state to the “amorphous” state was observed.The ion dose dependence and the annealing behaviour of the atomic structure of GaP implanted with 200 keV ? N⁺ ions were studied by using electron diffraction, backscattering and volume change measurements. The electronic structure was also investigated by measuring optical absorption and electrical conductivity.The implanted layer gradually loses the crystalline order with the increase of the nitrogen dose.The optical absorption coefficient α and electric conductivity σ of GaP crystals implanted with 200 keV?N⁺ ions of 1 × 10¹⁶ cm^?2 were expressed as αhν = C(hν ? E₀)ⁿ and log $\text{σ = A ? BT}{}^{\mathrm{<mtext>-</mtext><mtext>1</mtext><mtext>4</mtext>}}$, respectively. Moreover, the volume of the implanted layer increased about three percent and the electron diffraction pattern was diffused halo whose intensity monotonically decreases along the radial direction. These results indicate that the as-implanted layer has neither a long range order nor a short range order (“disordered state”).In the sample implanted at 1 × 10¹⁶ cm^?2, a structural phase-transition-like annealing stage was observed at around 400°C. That is, the optical absorption coefficient α abruptly fell off from 6 × 10⁴ to 7 × 10³ cm^?1 and the volume of the implanted layer decreased about 2% within an increase of less than 10 degrees in the anneal temperature. Moreover, the short range order of the lattice structure appeared in the electron diffraction pattern. According to the backscattering experiment, the heavily implanted GaP was still in the non-crystalline state even after annealing.These facts lead us to believe that heavily implanted GaP, followed by annealing at around 400°C, is in the “amorphous” state, although as-implanted Gap is not in the “amorphous” state but in the “disordered” state.     

The annealing of damage in ion implanted gallium arsenide

Photoluminescence measurements at 77°K and Rutherford scattering of 450 keV protons were used to study radiation damage and annealing in ion implanted GaAs. The characteristic band edge luminescence (8225 Å) in GaAs is completely quenched by ion implantation. Photoluminescence measurements on samples which were isochronally annealed show a single annealing stage at 600°C. A luminescence peak at 9140 Å is introduced into the spectra of all implanted and annealed samples. This peak is attributed to an acceptor level created by As vacancies. The intensity of the peak is greatly reduced by protecting the surface of implanted layers with SiO₂ during annealing. Rutherford scattering measurements on isochronally annealed samples reveal two annealing stages. A 300°C annealing stage is observed on samples which have an initial aligned yield less than random while a 650°C stage is observed on samples which have an initial aligned yield equal to random.     

Structure, electrical and magnetic properties, and the origin of the room temperature ferromagnetism in Mn-implanted Si

The structure and the electrical and magnetic properties of Mn-implanted Si, which exhibits ferromagnetic ordering at room temperature, are studied. Single-crystal n- and p-type Si wafers with high and low electrical resistivities are implanted by manganese ions to a dose of 5 × 10¹⁶ cm^?2. After implantation and subsequent vacuum annealing at 850°C, the implanted samples are examined by various methods. The Mn impurity that exhibits an electric activity and is incorporated into the Si lattice in interstitial sites is found to account for only a few percent of the total Mn content. The main part of Mn is fixed in Mn₁₅Si₂₆ nanoprecipitates in the Si matrix. The magnetization of implanted Si is found to be independent of the electrical resistivity and the conductivity type of silicon and the type of implanted impurity. The magnetization of implanted Si increases slightly upon short-term postimplantation annealing and disappears completely upon vacuum annealing at 1000°C for 5 h. The Mn impurity in Si is shown to have no significant magnetic moment at room temperature. These results indicate that the room temperature ferromagnetism in Mn-implanted Si is likely to be caused by implantation-induced defects in the silicon lattice rather than by a Mn impurity.     

Lattice site location and electronic structure of Te in GaAs

High purity <100> wafers of GaAs were implanted with radioactive^129mTe and stable¹²⁸Te at 110 keV to total doses of 2×10¹⁴ and 2×10¹⁵ Te/cm² respectively and studied with RBS/ channeling and Mössbauer spectroscopy on the 27.8 keV level of¹²⁹I. After implantation and/or annealing at temperatures between 200–300°C the Mössbauer spectra are dominated by a single line. Channeling reveals an appreciable residual damage in the host lattice, but also points to a substitutional position of the Te atoms. After annealing above ≌500°C, where nearly complete lattice damage recovery is obtained, the Te atoms become defect-associated. The results clearly point to the formation of Te_As?V_Ga complexes.