Nitridation of niobium oxide films by rapid thermal processing

The possibility of forming niobium oxynitride through the nitridation of niobium oxide films in molecular nitrogen by rapid thermal processing (RTP) was investigated. Niobium films 200 and 500 nm thick were deposited via sputtering onto Si(100) wafers covered with a thermally grown SiO₂ layer 100 nm thick. These as-deposited films exhibited distinct texture effects. They were processed in two steps using an RTP system. The as-deposited niobium films were first oxidized under an oxygen atmosphere at 450 °C for various periods of time and subsequently nitridated under a nitrogen atmosphere at temperatures ranging from 600 to 1000 °C for 1 min. Investigations of the oxidized films showed that samples where the start of niobium pentoxide formation was detected at the surface and the film bulk still consisted of a substoichiometric NbO_x phase exhibited distinctly lower surface roughness and microcrack densities than samples where complete oxidation of the film to Nb₂O₅ had occurred. The niobium oxide phases formed at the Nb/substrate interface also showed distinct texture. Zones of niobium oxide phases like NbO and NbO₂, which did not exist in the initial oxidized films, were formed during the nitridation. This is attributed to a “snow-plough effect” produced by the diffusion of nitrogen into the film, which pushes the oxygen deeper into the film bulk. These oxide phases, in particular the NbO₂ zone, act as barriers to the in-diffusion of nitrogen and also inhibit the outdiffusion of oxygen from the SiO₂ substrate layer. Nitridation of the partially oxidized niobium films in molecular nitrogen leads to the formation of various niobium oxide and nitride phases, but no indication of niobium oxynitride formation was found. Figure Schematic representation of the phase distribution in 200 nm Nb film on SiO₂/Si substrate after two steps annealing using an RTP system. The plot below represents the SIMS depth profiles of the nitridated sample with the phase assignment     

Nitridation of Niobium Pentoxide Films in Ammonia by Rapid Thermal Processing

The feasibility of niobium oxynitride formation through nitridation of niobium pentoxide films in ammonia by rapid thermal processing (RTP) was investigated. Niobium films 200 and 500 nm thick were deposited by sputtering on Si(100) wafers covered by a 100 nm thick thermally grown SiO₂ layer. These as‐deposited films exhibited distinct texture effects. They were processed in three steps using an RTP system. The as‐deposited niobium films were first nitridated in an ammonia atmosphere at 1000 °C for 1 min and then oxidised in molecular oxygen at temperatures ranging from 400 to 600 °C. Those samples in which a single Nb₂O₅ phase was determined after oxidation were additionally nitridated in ammonia at 1000 °C for 1 min. Investigations show that surface roughness of the samples after oxidation of niobium films first nitridated in ammonia is lower than after direct oxidation of as‐deposited films in oxygen, although the niobium pentoxide phase formed after annealing was the same in both cases. We explain this result as being due to the large expansion of the niobium lattice during the direct oxidation of the niobium film in molecular oxygen and also to the high oxidation rate of the as‐deposited niobium film in oxygen. By incorporation of oxygen in the crystal lattice of niobium and rapid formation of niobium pentoxide, substantial intrinsic stress was built up in the film, frequently resulting in delamination of the film from the substrate. Nitrogen hinders the diffusion of oxygen in nitridated films, which leads to a decrease of the oxidation rate and thus slower formation of Nb₂O₅. Nitridation of the completely oxidised niobium films in ammonia leads to the formation of niobium oxynitride and niobium nitride phases.     

Nitridation of niobium films by rapid thermal processing: different behaviour of films on oxydized silicon and monocrystalline sapphire substrates

By electron beam evaporation and RF magnetron sputtering 500 nm thick niobium films were deposited on thermally oxidized Si-(100)-wafers and by RF magnetron sputtering on monocrystalline sapphire-(1-102)-wafers. Investigations by scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealed differences of the film morphology depending on the substrate used: films deposited on SiO₂ exhibited an even surface with small crystallites, films on sapphire showed parallel surface structures with relatively large and well-shaped crystallites pointing at regular crystal growth influenced by the substrate. These differences in film morphology were also reflected in different reflection intensities of the films in XRD patterns, indicating that the films deposited on sapphire were strongly textured. In a first set of experiments nitridation in molecular nitrogen and ammonia was investigated. In a second set of experiments, it was tried to form oxynitrides of niobium by annealing the nitrided films in molecular oxygen. Particularly by X-ray-diffraction the formation of different nitride and oxide phases in dependence of the reaction temperature was examined. Further, elemental depth profiles were recorded by secondary ion mass spectrometry (SIMS) to track the position of the phases formed in the film. The different substrates led to disparate film reactivities, resulting in different nitridation grades of the films at similar reaction temperatures. In general, larger crystallite sizes resulted in less chemical reactivity of the films: even after nitridation at 1000 °C metallic niobium was still present in films deposited on sapphire. However, no evidence was obtained for the formation of oxynitrides by the process sequence observed.     

Annealing of thin B/Nb<Subscript>2</Subscript>N bilayers,B/Nb bilayers and Nb/B/Nb trilayers via rapid thermal processing (RTP)

B/Nb and B/Nb₂N bilayers and Nb/B/Nb trilayers of about 550 nm total thickness have been deposited on Si(100) wafers with 100 nm thermally grown oxide. Nb and B layers were deposited by magnetron sputtering. Nb₂N layers were prepared by nitridation of Nb films via rapid thermal processing (RTP). The samples were annealed subsequently at temperatures between 600 and 1,200 °C in an RTP system under Ar or NH₃ gas flow to study interdiffusion and reactivity of niobium, boron and nitrogen. Formation of phases was investigated by X-ray diffraction (XRD); surface morphology and roughness were studied via scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. Elemental depth profiles of selected samples were recorded by secondary ion mass spectrometry (SIMS). Annealing of the B/Nb bilayers and Nb/B/Nb trilayers under Ar leads to the formation of Nb₃B₂ at 1,200 °C at the B/Nb interface. At lower temperatures the high oxygen content in the boron layer is supposed to hinder the formation of borides due to formation of glass-like boron oxides. In NH₃ several niobium nitrides are formed but no boride phases. Here again the reactivity of boron with niobium is suppressed by the high oxygen content and boron oxide formation. During annealing of the B/Nb₂N bilayers no borides were formed indicating that well-formed Nb₂N is an effective diffusion barrier for B.     

Niobium nitride films formed by rapid thermal processing (RTP): a study of depth profiles and interface reactions by complementary analytical techniques

The nitridation of niobium films approximately 250 and 650 nm thick by rapid thermal processing (RTP) at 800 °C in molecular nitrogen or ammonia was investigated. The niobium films were deposited by electron beam evaporation on silicon substrates covered by a 100 or 300 nm thick thermally grown SiO₂ layer. In these investigations the reactivity of ammonia and molecular nitrogen was compared with regard to nitride formation and reaction with the SiO₂ substrate layer. The phases formed were characterized by X-ray diffraction (XRD). Depth profiles of the elements in the films were recorded by use of secondary neutral mass spectrometry (SNMS). Microstructure and spatial distribution of the elements were imaged by transmission electron microscopy (TEM) and energy-filtered TEM (EFTEM). Electron energy loss spectra (EELS) were taken at selected positions to discriminate between different nitride, oxynitride, and oxide phases. The results provide clear evidence of the expected higher reactivity of ammonia in nitride formation and reaction with the SiO₂ substrate layer. Outdiffusion of oxygen into the niobium film and indiffusion of nitrogen from the surface of the film result in the formation of oxynitride in a zone adjacent to the Nb/SiO₂ interface. SNMS profiles of nitrogen reveal a distinct tail which is attributed to enhanced diffusion of nitrogen along grain boundaries.     

Vanadium Nitride Films Formed by Rapid Thermal Processing (RTP): Depth Profiles and Interface Reactions Studied by Complementary Analytical Techniques

The nitridation of vanadium films in molecular nitrogen and ammonia using a RTP‐system was investigated. The V films were deposited on silicon substrates covered by 100 nm thermal SiO₂. For a few experiments sapphire substrates were used. Nitride formation at high temperatures (900 and 1100 °C) and interface reactions and diffusion of oxygen out of the SiO₂‐layer into the metal lattice at moderate temperatures (600 and 700 °C) were studied. For characterisation complementary analytical methods were used: X‐ray diffraction (XRD) for phase analysis, secondary neutral mass spectrometry (SNMS) and Rutherford Backscattering (RBS) for acquisition of depth profiles of V, N, O, C and Si, transmission electron microscopy (TEM) in combination with electron energy filtering for imaging element distributions (EFTEM) and recording electron energy loss spectra (EELS) to obtain detailed information about the initial stages of nitride, oxide and oxynitride formation, respectively, and the microstructure and element distributions of the films. In these experiments the SiO₂‐layer acts as diffusion barrier for nitrogen and source for oxygen causing the formation of substoichiometric vanadium oxides and oxynitrides near the V/SiO₂‐interface primarily at temperatures ≤ 900 °C. At a temperature of 1100 °C just a small amount of oxynitride forms near the interface because rapid diffusion of nitrogen and fast formation of VN (diffusion barrier for oxygen) inhibit the outdiffusion of oxygen into the metal layer. In the 600 °C regime, in argon atmosphere oxynitride phases observed in the surface region of these films originate from reaction of residual oxygen in the argon gas, whereas NH₃ as process gas does not lead to oxide or oxynitride formation at the surface (apart from the oxidation caused by storage). NH₃ seems to support the diffusion of oxygen out of the SiO₂‐layer. During the decomposition of ammonia at higher temperatures hydrogen is formed, which could attack the SiO₂. In contrast, sapphire substrates do not act as oxygen source in the 600 °C regime and change the nitridation behaviour of the vanadium films.     

Formation of niobium nitride by rapid thermal processing

The formation of group V transition metal nitride films by means of rapid thermal processing (RTP) has been investigated. Here we focus on the nitridation of niobium films of 200-500 nm thickness in the temperature range from 500 to 1,100 degrees C under laminar flow of molecular nitrogen or ammonia. The nitride phases formed were characterized by X-ray diffraction (XRD). Secondary neutral mass spectrometry (SNMS) and transmission electron microscopy (TEM) in combination with electron energy loss spectroscopy (EELS) were carried out on samples of selected experiments to provide more detailed information about the initial stages of nitride formation and the microstructure of the films. A classical formation sequence of nitride phases was observed with increasing nitrogen content in the order: alpha-Nb(N) --> beta-Nb2N --> gamma-Nb4N3 --> delta'-NbN --> Nb5N6. Furthermore, oxide enriched regions were discovered inside the metal films. These turned out to be formed mainly in the nitride sequence between the a-alphaNb(N) and beta-Nb2N-phases at the Nb/SiO2 interface due to a reaction of the Nb with the SiO2 layer of the silicon substrates on which the films had been deposited. The SiO2 layer acts as diffusion barrier for nitrogen but also as source for oxygen, according to SNMS and TEM/EELS studies, resulting in the formation of Nb-oxides and/or oxynitrides at the Nb/SiO2 interface.     

Characterization of transition metal nitride formation in rapid thermal processing (RTP)

The potential of RTP for the preparation of transition metal nitrides by reaction of metal thin films in molecular nitrogen was investigated. The films and the nitridation process were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive x-ray analysis (EDX) in a scanning electron microscope (SEM) and secondary neutral mass spectrometry (SNMS). The chemical states of vanadium at the utmost surface, detected by XPS, are related to V₂O₅ before RTP and to vanadium nitride, oxide and oxynitride after RTP. The deposition of a 3 nm Si top layer prevents V from oxidation and its selective removal before RTP enhances the proportion of nitride determined by XPS after RTP. From comparative experiments in a conventional tube furnace the advantages of RTP became obvious. With short process times of the RTP technique the integral amount of residual oxygen is kept low and oxide formation is largely avoided. The nitrogen content and the different polycrystalline phases formed by varying process time and temperature provide information about reactivity and the nitridation process. The nitrogen to vanadium ratio was determined by EDX and SNMS, revealing that the N content reaches saturation after only 5 seconds at 1100?°C.     

Synthesis of crystallized TaON and Ta3N5 by nitridation of Ta2O5 thin films grown by pulsed laser deposition

TaON and Ta₃N₅ thin films of different thicknesses were prepared by pulsed laser deposition of tantalum oxide followed by ex situ thermal nitridation under ammonia. The nitridation was carried out in flowing gas in the 600–800 °C temperature range. The dependence of tantalum oxynitride and nitride crystalline phases formation on nitridation reaction parameters was investigated. Structural and microstructural characteristics were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM).     

In situ UV-Vis and ex situ IR spectroelectrochemical investigations of amorphous and crystalline electrochromic Nb2O5 films in charged/discharged states

Niobium oxide (Nb₂O₅) films and powders have been obtained via the sol-gel route from an NbCl₅ precursor. XRD spectra revealed that films with pseudohexagonal (TT-phase) and orthorhombic (T-phase) structure were formed at 500  °C and 800  °C, respectively, while at 300  °C films were amorphous. Infrared (IR) and Raman spectra of powders and films of Nb₂O₅ in different polymorphic forms were detected, and vibrational band assignments were made. Electrochromic properties of amorphous films and films with the TT-phase were established from in situ ultraviolet visible (UV-Vis) spectroelectrochemical measurements and correlated with ex situ IR transmission spectra of charged films. Ex situ IR spectra revealed that charging of amorphous films is accompanied by variations of the Nb-O stretching mode intensity, while, for films with the TT- and T-phase, splitting of the Nb₃-O stretching modes and the appearance of polaron absorption were noted with Li⁺ ion insertion. Ex situ X-ray diffraction (XRD) spectra of charged films with the TT-phase showed changes of the unit cell dimensions with charging. The influence of the polaron absorption on the ex situ near-grazing incidence angle (NGIA) IR reflection-absorption spectra of charged/discharged films is discussed in detail. Received: 21 August 1997 / Accepted: 9 October 1997     

Compositional evolution of zirconium and niobium in the process of high-temperature nitridation of Zr–Nb alloys

The mechanism of formation of zirconium nitride-based ceramics in the single-stage high-temperature nitridation of Zr–Nb alloys with different niobium contents (0.1–10 at%) in a wide temperature range was determined using an oxidative constructing approach. In the process of nitridation, the segregation of a metallic niobium phase occurred with the subsequent formation of NbN. This should be taken into account when producing new high-temperature materials with unique functional properties     

Quantitative Analysis of Thin Aluminium-Oxynitride Films by EPMA

 Thin films of aluminium oxynitride with diverse composition were prepared by dc-magnetron sputtering of aluminium, utilising sputtering power as well as argon, oxygen and nitrogen gas flows to vary the composition. Since film properties depend mainly on the content of incorporated oxygen and nitrogen, a method for quantitative analysis of the main constituents based on electron probe micro analysis with energy dispersive detection was developed. The excellent precision of the quantitative results for aluminium as well as oxygen and nitrogen are shown. Furthermore, a film layer analysis program was applied for the quantification of several films deposited under the same deposition parameters on silicon wafers, from 520 nm down to 40 nm thickness, showing that electron probe micro analysis with energy dispersive detection is a reliable method for quantitative compositional analysis of thin aluminium oxynitride films down to approximately 20 nm thickness. Since this method of analysis provides only bulk information, expected inhomogeneities of the depth distribution of the film components were checked by secondary ion mass spectrometry depth profiles of two thin films and correlated to the EPMA results. The thickness of the films was determined by ellipsometry. Received September 1, 1998     

Oxygen ionic transport in Bi2O3-based oxides: The solid solutions Bi2O3–Nb2O5

The minimum concentration of niobium to stabilize the fluorite-type f.c.c. phase in the Bi₂O₃–Nb₂O₅ oxide system at temperatures below 996 K was ascertained to be about 10 mol%. Thermal expansion, electrical conductivity and crystal lattice parameters of the Bi(Nb)O_1.5+δ solid solutions decrease with increasing niobium content. Thermal expansion coefficients were calculated from the dilatometric data to be (10.314.5)×10⁻⁶ K⁻¹ at temperatures in the range 300–700 K and (17.526.0)×10⁻⁶ K⁻¹ at 700–1100 K. The conductivity of the Bi_{1− x} Nb _x O_1.5+δ ceramics is predominantly ionic. The p-type electronic transference numbers of the Bi(Nb)O_1.5+δ solid solutions in air were determined to be less than 0.1. Annealing at temperatures below 900 K results in a sharp decrease in conductivity of the Bi_{1− x} Nb _x O_1.5+δ ceramics. Received: 18 August 1997 / Accepted: 20 October 1997     

Characterisation of Radioactive Particles by SIMS

 Secondary ion mass spectrometry (SIMS) was optimised for characterisation of uranium- and plutonium-containing particles in soils, swipes and forensic samples. This was done by analysing in-house produced spherical UO₂-particles. Screening techniques as α-autoradiography together with SIMS analysis were employed to detect UO₂-particles in a soil sample from Chernobyl. The use of SIMS was exploited for the identification of uranium- and plutonium-containing particles and for the determination of their isotopic composition. The particles collected on swipe samples were transferred to a special adhesive support for the analysis by SIMS. Particles containing highly enriched uranium with diameters up to 10 μm were also detected in a forensic sample. For the measurements of the isotopic ratios a mass resolution of 1000 was used. At this resolution flat-top peaks were obtained which greatly improve the accuracy of the measurement. The isotopic composition of the particles was measured with a typical accuracy and precision of 0.5%. Statistically meaningful results can be obtained, for instance, from a specimen containing as few as 10¹⁰ atoms/μm³ of uranium in particles of UO₂ weighing a few picograms.     

Mesoporous Nb2O5 Films: Influence of Degree of Crystallinity on Properties

Nanocrystalline Nb₂O₅ films were prepared by an extended sol-gel method. The synthesis is based on the hydrolysis of a modified Nb-alkoxide precursor. Reaction of the modified precursor (Nb(OEt)₅ + 2 2,4-pentanedione) with water in ethanol leads to a homogeneous hydrolyzed solution, which is stable against precipitation of niobium oxide after evaporation of the ethanol and in the whole pH-range investigated (1–10). Autoclaving leads to amorphous gels, from which homogeneous nanocrystalline niobium oxide films of up to 15 m can be made. During annealing crystalline phases are first observed above 500°C with fully crystalline films of orthorhombic T-phase Nb₂O₅ attained at 600°C. The microstructural, crystallographic, optical and photoelectrical properties of the films were characterized by means of SEM, XRD, UV-VIS spectroscopy and surface photovoltage spectroscopy, respectively.     

Quantitative Sputter Depth Profiling of Silicon- and Aluminium Oxynitride Films

 Silicon- and aluminium oxynitride films have gained attention because of their interesting properties in various fields of technology. The specific properties strongly depend on the concentration of oxygen and nitrogen in the films. For the quantitative analysis of homogeneous silicon- and aluminium oxynitride films, EPMA has been proven a very reliable and precise method of analysis. In order to characterise films with graded composition or interface effects between the film and the substrate it is necessary to use sputter depth profiling techniques such as SIMS, hf-SNMS, AES, or hf-GD-OES. Unfortunately, stoichiometric silicon- and aluminium oxynitride films are insulating and therefore charge compensation has to be applied. For the quantification it was necessary to prepare calibration samples which have been analysed by different bulk analytical techniques such as NRA, RBS and EPMA. With these calibration samples, sensitivity factors have been determined and the functional dependence of the sensitivity factors on the composition has been derived. The advantages and disadvantages of the different sputtering techniques and the applicability of the obtained sensitivity functions for the quantitative depth profiling of silicon- and aluminium oxynitride films are discussed.     

Spectroelectrochemistry of conducting polypyrrole and poly(pyrrole–cyclodextrin) prepared in aqueous and nonaqueous solvents

Conducting polypyrrole (PPy) and poly(pyrrole-2,6-dimethyl-β-cyclodextrin) [poly(Py-β-DMCD)] films were prepared by electrode potential cycling on a gold electrode in aqueous and nonaqueous (acetonitrile) electrolyte solutions containing lithium perchlorate. The resulting products were characterized with cyclic voltammetry, in situ UV–Vis spectroscopy, and in situ conductivity measurements. For the electrosynthesis of poly(Py-β-DMCD), a (1:1) (mole–mole) (Py-β-DMCD) supramolecular cyclodextrin complex of pyrrole previously characterized with proton NMR spectroscopy was used as starting material. A different cyclic voltammetric behavior was observed for pyrrole and the poly(Py-β-DMCD) complex in aqueous and nonaqueous solutions during electrosynthesis. The results show that in both solutions in the presence of cyclodextrin, the oxidation potential of pyrrole monomers increases. However, the difference of oxidation potentials for films prepared in aqueous solution is larger than for the films prepared in nonaqueous solution. In situ conductivity measurements of the films show that films prepared in acetonitrile solution are more conductive than those synthesized in aqueous solutions. Maximum conductivity can be observed for PPy and poly(Py-β-DMCD) films prepared in nonaqueous solution in the range of 0.10 < E _Ag/AgCl < 0.90 V and 0.30 < E _Ag/AgCl < 0.90 V, respectively. In situ UV–Vis spectroelectrochemical data for both films prepared potentiodynamically by cycling the potentials from −0.40 < E _Ag/AgCl < 0.90 V in nonaqueous solutions are reported. This paper is dedicated to Prof. Alan Bond on the occasion of his 65th birthday in recognition of his numerous contributions toward electrochemistry.     

Determination of Nb, Ta, Zr and Hf in Micro-Phases at Low Concentrations by EPMA

 Depletion of high field strength elements (HFSE: Nb, Ta, Zr, Hf ) relative to other lithophile trace elements in arc magmas and variations of Nb/Ta and Zr/Hf ratios in mantle-derived rocks can be addressed through studies of minerals, which concentrate and fractionate these elements. The presence of rutile, a common accessory Ti-oxide phase in various mantle rocks, has often been invoked to explain the Nb and Ta depletion in arc lavas because it has the highest HFSE abundances among the known mantle minerals. In this study, we measure the concentrations of Nb, Ta, Zr and Hf (at > 200 ppm) in rutile of two metasomatized mantle lherzolites using a Cameca SX-100 electron microprobe and obtain Nb/Ta ratios with an accuracy of about ± 5%. Mass balance calculations indicate that ≤ 1−5% of Nb and Ta in the rocks reside in major minerals and that the balance is hosted by accessory Ti-oxides. The Nb/Ta ratios vary significantly in nearby rutile grains in both peridotites (17–33, average 23; 12–37, average 21). Therefore, individual rutile grains may not be representative of the total grain population. However, Nb/Ta ratios measured in the bulk rock lherzolites by solution ICP-MS (21 ± 0.3) are within the analytical error of the average Nb/Ta values calculated for 5–7 rutile grains in both samples. These results emphasise that a representative grain selection must be analysed in order to determine trace elements contents of bulk rocks from data on accessory phases.     

EPMA and Quantitative MCs+-SIMS of Metal-DLC Coating Materials

 Compositional characterization of metal-DLC (metal-containing diamond-like carbon) hard coatings is carried out by (WDS)-EPMA and MCs⁺-SIMS. EPMA enables accurate (± 5% relative) quantitative analysis including minor concentrations (0.1–10 at%) of N, O and Ar. Under conditions of “near-surface” EPMA (E₀ < 10 keV) the influence of surface oxide films on “pure” metal standards may be a limiting factor in respect of accuracy. Depth profiling of sufficiently “thick” layered structures (film thickness ≥ 2 μm) is carried out by EPMA-line scans along mechanically prepared bevels. The depth resolution is about 0.2 μm. SIMS in the MCs⁺-mode enables high resolution (< 20 nm) depth profiling of metal-DLC layered structures including the determination of H (1–20 at%). MCs⁺-SIMS, i.e. employing Cs⁺ primary ions and monitoring MCs⁺ molecular secondary ions (M is the element of interest) is presented as a promising route towards sufficiently accurate (10–20%) SIMS-quantification. Matrix-independent relative sensitivity factors for MCs⁺-SIMS are derived from homogeneous coating materials defined by EPMA. EPMA proves to be also useful to detect problems related to SIMS of Ar in metal-DLC materials. The combination EPMA-SIMS is demonstrated as an effective analytical strategy for quality control in industrial production and to support the development of metal DLC layered structures with optimum tribological properties.     

Installation of a Shielded SIMS for the Analysis of Irradiated Nuclear Fuels

A CAMECA IMS 6F secondary ion mass spectrometer (SIMS) for the analysis of irradiated nuclear fuel has been installed in the Microbeam Analysis Laboratory of the Institute for Transuranium Elements (ITU). This device is specially equipped with heavy metal shielding to enable the safe examination of irradiated nuclear fuel samples with activities up to 75 GBq. At ITU the shielded SIMS will be used in conjunction with EPMA taking advantage of the complementary nature of the two techniques and will make important contributions to ongoing research programmes such as the safety of nuclear fuels, the partitioning and transmutation programme and the characterisation of spent fuels. The paper describes the shielded SIMS installation and presents a selection of results from the commissioning tests.