GdN,GdP和GdAs的电子结构：第一性原理研究

用从头计算第一性原理对Gd-V化合物进行了电子结构与磁性的理论研究.计算的理论基础是密度泛函理论和局域(自旋)密度近似,并应用了相对论性LMTO-ASA计算方法.结果表明Gd-V的非自旋极化能带均为半金属特征.在进行宽能带的自能修正后GdN的非自旋极化能带是半导体行为(E_{g≈019eV).自旋极化的LSDA计算结果表明Gd-V均为半金属性的能带结构,即空带与价带有微弱的交叠.在布里渊区的X点和Γ点,分别有n型和p型色散的能带穿过费米面.对于GdN而言,它的上自旋子带为半金属能带,而下自旋子带却 关键词：}     

碳和氧掺杂紫磷烯作为双极磁性半导体材料的理论预测

紫磷烯是一种结构稳定且具有优异光电特性的新型二维材料,研究掺杂效应有助于理解其物理本质,对进一步开发纳米电子器件具有重要意义.本文采用基于密度泛函理论的第一性原理方法,研究了非金属元素B,C,N,O掺杂单层紫磷烯的电磁性质.计算结果表明,B和N掺杂之后没有产生磁性,体系依旧表现为非磁性半导体;而C和O掺杂导致体系发生自旋劈裂,紫磷烯由非磁性半导体转变成为双极磁性半导体,其自旋密度主要分布在磷原子和间隙区域内而非杂原子上.电场调控氧掺杂紫磷烯可使其载流子的自旋极化方向发生反转,当施加一定大小的正向或反向的静电场时,能带色散程度变强,氧掺杂紫磷烯转变成100%自旋极化向下或向上的单自旋半金属磁体.基于氧掺杂紫磷烯材料设计的场效应自旋滤通器可利用改变门电压方向的方法实现电流自旋极化方向的反转,表明氧掺杂紫磷烯有望成为二维自旋场效应晶体管、双极磁性自旋电子学器件、双通道场效应自旋滤通器以及场效应自旋阀的理想候选材料.     

三元化合物ZnVSe2半金属铁磁性的第一性原理计算

采用基于密度泛函理论(DFT)框架下的第一性原理平面波赝势(PWP)方法,结合广义梯度近似(GGA),对三元化合物ZnVSe₂晶体的电子结构进行了计算,分析了ZnVSe₂晶体自旋极化的能带结构、电子态密度、电荷布居、磁矩等.计算结果表明,三元化合物ZnVSe₂会产生自旋极化状态,能带结构和态密度显示为半金属特征,表现出显著的铁磁性行为,具有高达近100%的传导电子自旋极化率,其半金属能隙为0.443eV,理论预测其可能是一种具有一定应用潜能 关键词： 2')" href="#">ZnVSe₂ 平面波赝势方法 半金属铁磁性 第一性原理     

半金属磁性材料研究进展

半金属材料是一种新型的功能自旋电子学材料，是一种具有特殊能带结构的物质，近年来13益受到人们的关注。半金属材料从微观上具有导体和绝缘体双重性质：对一种自旋取向的电子其能带结构呈现金属性，而另一自旋取向的电子其能带结构呈现绝缘体性．文章着重对Half—Heusler结构半金属材料、CrO2铁磁半金属、Fe3O4亚铁磁材料半金属、反铁磁材料半金属和钙钛矿及双钙钛矿半金属的结构特性进行分析和综述，并对半金属材料的应用原理和应用前景作了阐述。     

分子基磁体Cr[N(CN)2]2电子结构和半金属性的第一性原理研究

基于第一性原理方法结合广义梯度近似,研究了分子基磁体Cr[N(CN)₂]₂的电子结构和半金属性. 对总能量,自旋极化的能带结构,态密度以及自旋磁矩的计算表明该分子磁体为半金属铁磁体．每个分子的总磁矩为2.00μB,其中Cr²⁺对分子磁矩的贡献较大,而配位体上的碳原子和氮原子的贡献相对较小．讨论了当晶格常数发生小幅变化时材料半金属性的变化.     

Cr掺杂浓度对AlN半金属性影响的第一性原理研究

本文基于密度泛函理论的第一性原理方法, 在广义梯度近似(GGA)下计算了掺杂过渡金属Cr原子后AlN晶体自旋极化的能带结构、分态密度等性质. 结果表明, 半金属能隙随着掺杂浓度的增大而减小. 文中以掺杂浓度为12.5%的Cr-AlN(2×2×1)为例, 分析了其自旋极化的能带结构、分态密度和磁矩等性质, 发现Cr-3d电子对自旋向下子带导带底的能量位置起决定作用. 随着掺杂浓度的增大, Cr原子间相互作用增强, Cr-3d能带向两边展宽, 导致自旋向下子带导带底的能量位置下降, 从而半金属能隙变窄.     

Cr掺杂浓度对AlN半金属性影响的第一性原理研究

本文基于密度泛函理论的第一性原理方法, 在广义梯度近似(GGA)下计算了掺杂过渡金属Cr原子后AlN晶体自旋极化的能带结构、分态密度等性质. 结果表明, 半金属能隙随着掺杂浓度的增大而减小. 文中以掺杂浓度为12.5%的Cr-AlN(2×2×1)为例, 分析了其自旋极化的能带结构、分态密度和磁矩等性质, 发现Cr-3d电子对自旋向下子带导带底的能量位置起决定作用. 随着掺杂浓度的增大, Cr原子间相互作用增强, Cr-3d能带向两边展宽, 导致自旋向下子带导带底的能量位置下降, 从而半金属能隙变窄.     

扰动对有机磁体器件自旋极化输运特性的影响

基于紧束缚模型和格林函数方法,研究了有机磁体晶格扰动和侧基自旋取向扰动对金属/有机磁体/金属三明治结构有机自旋器件自旋极化输运特性的影响.计算结果表明:晶格扰动的存在降低了器件的起始偏压,减小了导通电流,并使得电流-电压曲线的量子台阶效应不再显著,扰动不太强时电流仍呈现较高的自旋极化率;而侧基自旋取向扰动减小了体系的自旋劈裂,增加了器件的起始偏压,低偏压下随着扰动的增强器件电流及其自旋极化率明显降低.进一步模拟了温度对器件自旋极化输运的影响. 关键词： 有机自旋电子学 有机磁体 自旋极化输运 自旋过滤     

半金属磁性材料

半金属材料的一个重要特征为具有高达100%的传导电子自旋极化率。半金属磁性材料是一种具有极大的应用潜能的自旋电子学材料。本文从半金属性的来源、材料的晶体结构、半金属的电子态和电磁特性等不同角度对半金属材料进行了系统分类。对现已发现的几种半金属材料的基本性质和原子结构特征进行了综述。分别对5种传导电子自旋极化率的测量方法进行了分析和讨论。     

半金属磁性材料

半金属材料的一个重要特征为具有高达100%的传导电子自旋极化率。半金属磁性材料是一种具有极大的应用潜能的自旋电子学材料。本文从半金属性的来源、材料的晶体结构、半金属的电子态和电磁特性等不同角度对半金属材料进行了系统分类。对现已发现的几种半金属材料的基本性质和原子结构特征进行了综述。分别对5种传导电子自旋极化率的测量方法进行了分析和讨论。     

Magnetization of beryllium oxide in the presence of nonmagnetic impurities: Boron,carbon, and nitrogen

The electronic and magnetic states of a nonmagnetic insulator, namely, beryllium oxide, doped with nonmagnetic 2p elements (boron, carbon, and nitrogen) are studied using the density functional theory. The spin polarization of the 2p impurity states, as well as the transition of the doped BeO:(B,C,N) systems to the states of semiconducting or half-metallic magnets, is observed. The prospects for creating new magnetic materials by doping nonmagnetic insulators with nonmagnetic p impurities are discussed.     

Electron correlations and the minority-spin band gap in half-metallic Heusler alloys

Electron-electron correlations affect the band gap of half-metallic ferromagnets by introducing nonquasiparticle states just above the Fermi level. In contrast with the spin-orbit coupling, a large asymmetric nonquasiparticle spectral weight is present in the minority-spin channel, leading to a peculiar finite-temperature spin depolarization effects. Using recently developed first-principle dynamical mean-field theory, we investigate these effects for the half-metallic ferrimagnetic Heusler compound FeMnSb. We discuss depolarization effects in terms of strength of local Coulomb interaction U and temperature in FeMnSb. We propose Ni(1-x)Fe(x)MnSb alloys as a perspective materials to be used in spin-valve structures and for experimental search of nonquasiparticle states in half-metallic materials.     

Mn掺杂LiZnN新型稀磁半导体磁电性质的第一性原理计算

采用基于密度泛函理论的第一性原理平面波超软赝势方法,对纯LiZnN、Mn掺杂LiZnN及Li不足和过量时Mn掺杂LiZnN体系进行几何结构优化,分析体系的电子结构、半金属性和磁电性质.结果表明,Mn的掺入使体系产生自旋极化杂质带,自旋极化率为100%,表现出半金属铁磁性,且形成较强的Mn-N共价键.当Li不足时,Mn-N键的共价性最强,键长变短,体系半金属性明显增强,形成能最低,结构最稳定.Li过量时,体系半金属性消失,表现为金属性,杂质带宽度增大,体系导电能力增强.表明Mn掺杂LiZnN新型稀磁半导体可以通过Mn的掺入和改变Li的含量来实现磁性和电性的分离调控.掺杂体系的基态均为铁磁性,其净磁矩主要由Mn原子贡献,通过海森堡模型计算发现,Li空位可以有效提高体系的居里温度.     

Surface effects on the magnetic properties of Co2FeAl(0 0 1): An ab initio study

Electronic structures of the Co₂FeAl(0 0 1) surface are studied theoretically via first-principles calculations based on density functional theory. It is found that the minority spin band gap at the Fermi level in bulk Co₂FeAl disappears at the surface due to space localization of the states. However, beneath the surface, the density of states of individual atoms shows a trend of minority spin gap opening at the Fermi level, which indicates that the electronic structures become close to that of bulk Co₂FeAl. The termination of FeAl is more favorable for spin polarization of Co₂FeAl films than that of Co. Accordingly, we present a composite tri-layer model to illustrate the fading of the half-metallic property in Co₂FeAl films against the ideal character in bulk materials.     

Theory of half-metallic ferrimagnetism in double perovskites

Double perovskites such as Sr(2)FeMoO(6) are rare examples of materials with half-metallic ground states and a ferrimagnetic T(c) above room temperature. We present a comprehensive theory of the temperature and disorder dependence of their magnetic properties by deriving and validating a new effective spin Hamiltonian for these materials, amenable to large-scale three-dimensional simulations. We show how disorder, ubiquitous in these materials, affects T(c), the magnetization, and the conduction electron polarization. We conclude with a novel proposal to enhance T(c) without sacrificing polarization.     

Thermodynamic Stability,Half-Metallic and Optical Properties of Sc2CoSi [001] Film:a DFT Study

The electronic and optical characteristics of the Sc2 CoSi Heusler with L21 structure and also the surface effect on electronic and optical properties, and the ?lms thermodynamic stability of the [001] direction in four cases including:Sc-Sc, Sc-Co, Sc-Si and Co-Si terminations are studied using the ?rst principles calculations(FPLAPW) within the framework of the density functional theory(DFT). The band structure calculations represent the ferromagnetic halfmetallic properties with 100% spin polarization and 0.54 e V indirect gap in spin down for Sc2 CoSi bulk with optimized lattice parameters of 6.25 A?. The total magnetic moment obtained for this compound is-1.0 μB, which is in accordance with Slater-Pauling rule. The half-metallic(HM) behavior by 100% spin polarization at Fermi level is occurred in the Sc-Si termination with a 0.32 eV gap in down spin. The optical responses have been calculated for the bulk and ScSi termination by a red shift in these parameters and the metallic treatments have been increased. According to the thermodynamic phase diagrams, it is shown the Sc-Si and Sc-Sc terminations are more stable than other terminations.     

Mn-doped GaN/AlN heterojunction for spintronic devices

We present first principles calculations of Mn-doped GaN/AlN(0001) heterostructures obtained within the framework of density functional theory by using plane wave pseudopotential techniques. We found that for diluted Mn concentration this system present an integer magnetization that is a fingerprint of half-metallic property; this suggests the possibility to use this junction as a spin injector.     

Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure

First-principles investigations of the structural, electronic, and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal the possibility of efficient spin injection from a ferromagnetic GaN:Cr electrode through an AlN tunnel barrier. We demonstrate that Cr atoms segregate into the GaN region and that these interfaces retain their half-metallic behavior leading to a complete, i.e., 100%, spin polarization of the conduction electrons. This property makes the wide band-gap nitrides doped with Cr to be excellent candidates for high-efficiency magnetoelectronic devices.     

有限温度张量重正化群方法及其在阻挫量子磁性研究中的应用

阻挫量子磁体中的新奇物态与效应是凝聚态物理研究的重要前沿方向,因其与高温超导、拓扑量子计算等的密切联系,近年来吸引了人们浓厚的研究兴趣。实验上,阻挫自旋液体候选材料的 新进展层出不穷,人们系统地研究了若干三角晶格、笼目晶格和六角Kitaev 阻挫磁体等材料,发 现其在一定条件下展现出自旋液体态的特征,但澄清其中的量子物态是充满挑战的量子多体问题。 作者最近的工作指出,可以从有限温度张量重正化群多体计算入手,开展热力学性质的精确计算 与分析,确定阻挫磁体的微观自旋模型,做出进一步理论预言并开展实验验证,从而建立量子磁性 系统的多体计算精确研究方案。有限温度张量重正化群方法是计算大尺寸二维阻挫量子自旋模型 有限温度性质的有力工具,在本文中作者首先介绍新近发展的系列张量重正化群方法,包括线性 和指数张量重正化群等。随后,作者讨论有限温度张量方法在三角晶格量子伊辛磁体TmMgGaO4 和六角晶格Kitaev 磁体α-RuCl3 的微观自旋模型中的具体应用：通过高精度和全面的多体计算, 揭示出其中存在演生U(1) 对称性与拓扑相变,以及高场量子自旋液体态等新颖的结论,这些理 论预言也陆续被实验所证实。通过上述实例,作者展示了有限温度张量重正化群计算方法在自旋 液体候选材料研究中的应用价值,并期待这些方法能在强关联量子物质研究中发挥重要作用。     

Reducing disorder in artificial kagome ice

Artificial spin ice has become a valuable tool for understanding magnetic interactions on a microscopic level. The strength in the approach lies in the ability of a synthetic array of nanoscale magnets to mimic crystalline materials, composed of atomic magnetic moments. Unfortunately, these nanoscale magnets, patterned from metal alloys, can show substantial variation in relevant quantities such as the coercive field, with deviations up to 16%. By carefully studying the reversal process of artificial kagome ice, we can directly measure the distribution of coercivities, and, by switching from disconnected islands to a connected structure, we find that the coercivity distribution can achieve a deviation of only 3.3%. These narrow deviations should allow the observation of behavior that mimics canonical spin-ice materials more closely.