Electronic structure of β-RbNd(MoO4)2 by XPS and XES

β-RbNd(MoO₄)₂ microplates have been prepared by the multistage solid state synthesis method. The phase composition and micromorphology of the final product have been evaluated by XRD and SEM methods. The electronic structure of β-RbNd(MoO₄)₂ molybdate has been studied employing the X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES). For the molybdate, the XPS core-level and valence-band spectra, as well as XES bands representing energy distribution of the Mo 4d- and O 2p-like states, have been measured. It has been established that the O 2p-like states contribute mainly to the upper portion of the valence band with also significant contributions throughout the whole valence-band region. The Mo 4d-like states contribute mainly to a lower valence band portion.     

Electronic structure of ZrTiO4 and HfTiO4: Self-consistent cluster calculations and X-ray spectroscopy studies

Total and partial densities of states of the constituent atoms of ZrTiO₄ and HfTiO₄ titanates have been calculated using a self-consistent cluster method as incorporated in the FEFF8 code. The calculations reveal the similarity of the electronic structure of both titanates and indicate that the valence band of the compounds under consideration is dominated by contributions of O 2p states. These states contribute throughout the whole valence-band region; however their maximum contributions occur in the upper portion of the band. Other significant contributors in the valence-band region are Ti 3d and Zr 4d states in ZrTiO₄ and Ti 3d and Hf 5d states in HfTiO₄. All the above d-like states contribute throughout the whole valence-band region of the titanates; however maximum contributions of the Ti 3d states occur in the upper portion, whilst those of the Zr 4d (Hf 5d) states are in the central portions of the valence band. The FEFF8 calculations render that the bottom of the conduction band of ZrTiO₄ and HfTiO₄ is dominated by contributions of Ti 3d^? states, with also smaller contributions of Zr 4d^?/Hf 5d^? and O 2p^? states. To verify the above FEFF8 data, the X-ray emission bands, representing the energy distributions of mainly O 2p, Ti 3d and Zr 4d states, were measured and compared on a common energy scale. These experimental data are found to be in agreement with the theoretical FEFF8 results for the electronic structure of ZrTiO₄ and HfTiO₄ titanates. Additionally, X-ray photoelectron valence-band and core-level spectra were recorded for the constituent atoms of the titanates under study.     

Crystal growth and the electronic structure of Tl3PbCl5

Total and partial densities of states of constituent atoms of two tetragonal phases of Tl₃PbCl₅ (space groups P4₁2₁2 and P4₁) have been calculated using the full potential linearized augmented plane wave (FP-LAPW) method and Korringa-Kohn-Rostoker method within coherent potential approximation (KKR-CPA). The results obtained reveal the similarity of occupations of the valence band and the conduction band in the both tetragonal phases of Tl₃PbCl₅. The FP-LAPW and KKR-CPA data indicate that the valence band of Tl₃PbCl₅ is dominated by contributions of the Cl 3p-like states, which contribute mainly to the top and the central portion of the valence band with also significant contributions throughout the whole valence-band region. Further, the bottom of the valence band of Tl₃PbCl₅ is composed mainly of the Tl 6s-like states, while the bottom of the conduction band is dominated by contributions of the empty Pb 6p-like states. The KKR-CPA results allow to assume that the width of the valence band increases somewhat while band gap, E_g, decreases when changing the crystal structure from P4₁2₁2 to P4₁. The X-ray photoelectron core-level and valence-band spectra for pristine and Ar⁺-ion-irradiated surfaces of a Tl₃PbCl₅ monocrystal grown by the Bridgman-Stockbarger method have been measured.     

The electronic structure of SrTiO3 and some simple related oxides (MgO,Al2O3, SrO,TiO2)

The valence band density of states (VBDOS) of the insulating oxides SrTiO₃, TiO₂, SrO, MgO and Al₂O₃ obtained by X-ray photoelectron spectroscopy (XPS), are reported. Qualitatively, the VBDOS of these oxides are similar to one another. The XPS results are compared with results from soft X-ray emission spectroscopy (XES), ultraviolet photoemission spectroscopy (UPS), and theoretical calculations. There are some differences (in particular for TiO₂) between the XES and XPS results, which are probably due to matrix element effects enhancing different features of the VBDOS in the two techniques. The XPS results definitively establish the position of the O 2s level, which had been erroneously assigned in previous low-energy UPS measurements. Cluster-type calculations are demonstrated to give a reasonable representation of the VBDOS for the oxides.     

Electronic structure of amorphous Zr based alloys with V,Cr and Mn studied by photoelectron spectroscopy and bandstructure calculations

The electronic structure of the amorphous alloys V₃₆Zr₆₄, Cr₃₀Zr₇₀ and Mn₃₀Zr₇₀ has been studied by photoelectron spectroscopy (UPS, XPS) and bandstructure calculations for the ordered analogs. The valence band photoelectron spectra and the calculated density of states reveal a large contribution to the state density at the Fermi level from the 3d metal. This behavior is characteristic of Zr based alloys with early 3d transition metals and differs from alloys with higher 3d electron numbers in which the 3d band is located at higher energies. The implications of the high density of states at E_F of the amorphous Zr-(V, Cr, Mn) alloys for magnetism and the occurrence of superconductivity is discussed.     

Photoemission study of Pd Zr and Cu Zr alloys

The XPS valence bands and core levels of the alloys Pd_1?xZr_x (0<x<1) and Cu_1?xZr_x (0<x<1) have been measured. The alloys prepared by coevaporation are crystalline — but their valence band spectra are close to those of the metallic glasses of the same compositions. The large valence band and core level shifts observed for Pd can be explained by a simple theory, not necessitating the postulation of a new type of bonding in these systems.     

d Band structure and alloying effects in crystalline and amorphous ZrCo and ZrNi

We study the electronic structure by photoemission of amorphous Zr₇₀Co₃₀, Zr₇₅ Ni₂₅ and crystalline Zr₂Co, Zr₂Ni. The results show that the electronic structures for the amorphous and crystalline states are quite similar. The valence bands of the amorphous alloys do not present features attributable specifically to the amorphous state. In both cases the valence band indicate a strong localization of the d levels and can be interpreted as a superposition of the Zr 4d levels in the upper part of the band, the Co or Ni 3d levels being centered in the low part of the part of the band. The present results and previous ones on ZrCu amorphous alloys show that the binding energies of the 3d levels increase with the distance between the alloying elements in the periodic table. Moreover the full width at half maximum of Co, Ni or Cu d levels is noticeably less than for pure elements. These results are considered at the light of atomic structure and theoretical models ; in particular it seems that the coordination number of the atoms plays a dominant role in the structure of the d levels.     

Electronic structure of Alq3 and Liq using soft X-ray spectroscopy and density functional theory calculation

The electronic structure of aluminum tris-8-hydroxyquinoline (Alq₃) and 8-hydroquinolatolithium (Liq) was investigated using a combination of X-ray emission spectroscopy (XES), X-ray absorption spectroscopy (XAS), X-ray photoelectron spectroscopy (XPS), and spectral simulation with density functional theory. The chemical bonding states of Alq₃ and Liq were analyzed using XPS core-level spectra. The band gaps of Alq₃ and Liq were measured by combining the XAS and XES results. Additionally, resonant and non-resonant XES were used to measure the density of states for O sites in the molecules.     

Electronic structure and optical properties of RbPb2Br5

We report on density functional theory (DFT) calculations of the total and partial densities of states of rubidium dilead pentabromide, RbPb₂Br₅, employing the augmented plane wave+local orbitals (APW+lo) method as incorporated in the WIEN2k package. The calculations indicate that the Pb 6s and Br 4p states are the dominant contributors to the valence band: their main contributions are found to occur at the bottom and at the top of the band, respectively. Our calculations reveal that the bottom of the conduction band is formed predominantly from contributions of the unoccupied Pb 6p states. Data of total DOS derived in the present DFT calculations are found to be in agreement with the experimental X-ray photoelectron valence-band spectrum of this compound. The predominant contributions of the Br 4p states at the top of the valence band of rubidium dilead pentabromide are confirmed by comparison on a common energy scale of the X-ray emission band representing the energy distribution of the valence Br p states and the X-ray photoelectron valence-band spectrum of the RbPb₂Br₅ single crystal. Main optical characteristics of RbPb₂Br₅, such as dispersion of the absorption coefficient, real and imaginary parts of dielectric function, electron energy-loss spectrum, refractive index, extinction coefficient and optical reflectivity are explored for RbPb₂Br₅ by the DFT calculations.     

Resonant photoemission spectroscopy study of electronic structures of LiMn2O4

The valence-band resonant photoemission spectra (RPES) of LiMn₂O₄ have been measured throughout the Mn3p absorption edge. Based on the RPES data, the contribution of Mn3d states to the valence band of LiMn₂O₄ has been described and, consequently, the detailed hybridization between O2p and Mn3d states in the valence-band was determined.     

The electronic structures of the core and valence ion states of metal oxides

SCF-Xα SW MO calculations on metal core ion hole states and X-ray emission (XES) and X-ray photoelectron (XPS) transition states of the non- transition metal oxidic clusters MgO₆^10?, AlO₄^5? and SiO₄^4? show relative valence orbital energies to be virtually unaffected by the creation of valence orbital or metal core orbital holes. Accordingly, valence orbital energies derived from XPS and XES are directly comparable and may be correlated to generate empirical MO diagrams. In addition, charge relaxation about the metal core hole is small and valence orbital compositions are little changed in the core hole state. On the other hand, for the transition metal oxidic clusters FeO₆^10?, CrO₆^9? and TiO₆^8? relative valence orbital energies are sharply changed by a metal core orbital or crystal field orbital hole, the energy lowering of an orbital increasing with its degree of metal character. Consequently O 2p nonbonding → M 3d-O 2p antibonding (crystal field) energies are reduced, while M 3d bonding → O 2p nonbonding and M 3d-O 2p antibonding → M 4s,p-O 2p antibonding (conduction band) energies increase. Charge relaxation about the core hole is virtually complete in the transition metal oxides and substantial changes are observed in the composition of those valence orbitals with appreciable M 3d character. This change in composition is greater for e _g than for t_2g orbitals and increases as the separation of the e_g crystal field (CF) orbitals and the O 2p nonbonding orbital set decreases. Based on the hole state MO diagrams the higher energy XPS satellite in TiO₂ (at about 13 eV) is assigned to a valence → conduction band transition. The UV PES satellites at 8.2 eV in Cr₂O₃ and 9.3 eV in FeO are tentatively assigned to similar transitions to conduction band orbitals, although the closeness in energy of the crystal field and O 2p nonbonding orbitals in the valence orbital hole state prevents a definite assignment on energy criteria alone. However the calculations do clearly show that charge transfer transitions of the e_g bonding → e_g crystal field orbital type would generally occur at lower energy than is consistent with observed satellite structure.A core electron hole has little effect upon relative orbital energies and is only slightly neutralized by valence electron redistribution for MgO and SiO₂. For the transition metal oxides a core hole lowers the relative energies of M3d containing orbitals by large amounts, reducing O → M charge transfer and increasing M 3d crystal field → conduction band energies. Large and sometimes overcomplete neutralization of the core hole is observed, increasing from CrO₆^9? to FeO₆^10? to TiO₆^8?. as the O → M charge transfer energy declines.High energy XPS satellites in TiO₂ may be assigned to O 2p nonbonding → conduction band transitions while lower energy UV PES satellites in FeO and Cr₂O₃ arise from crystal field or O 2p nonbonding → conduction band excitations. Our “shake-up” assignment for FeO₆^10?, CrO₆^9? and TiO₆^8? are less than definitive because no procedure has yet been developed to calculate “shake-up” intensities resulting from transitions of the type described. However the results do allow a critical evaluation of earlier qualitative predictions of core and valence hole effects. First, we find that the comparison of hole or valence state ionic systems with equilibrium distance systems of higher nuclear and/or cation charge (e.g. the comparison of the FeO₆^10? Fe 2p core hole state to Co₃O₄) is dangerous. For example, larger MO distances in the ion states substantially reduce crystal field splittings. Second, core and CF orbital holes sharply reduce O → M charge transfer energies, giving 2e_g → 3e_g energy separations which are generally too small to match observed satellite energies. Third, highest occupied CF-conduction band energies are only about 4–5 eV in the ground states, but increase to about 7–11 eV in the core and valence hole states of the transition metal oxides studied. The energetic arguments presented thus support the idea of CF and/or O 2p nonbonding → conduction band excitations as assignments for “shake-up” satellites, at least in oxides of metals near the beginning of the transition series.     

The first principle study of magnetic properties of Mn2WSn,Fe2YSn (Y=Ti,V), Co2YSn (Y=Ti,Zr, Hf,V, Mn) and Ni2YSn (Y=Ti,Zr, Hf,V, Mn) heusler alloys

The spin polarized electronic band structures, density of states (DOS) and magnetic properties of Mn₂WSn, Fe₂YSn (Y=Ti, V), Co₂YSn (Y=Ti, Zr, Hf, V, Mn) and Ni₂YSn (Y=Ti, Zr, Hf, V, Mn) huesler compounds are reported. The calculations are performed by using full-potential linearized augmented plane wave method (FP-LAPW) within density functional theory. The magnetic trend in these compounds is studied using values of magnetic moments, exchange interaction and calculated band gap. The results reveal that Mn₂WSn and Ni₂VSn show 100% spin polarization, Co₂YSn (Y=Ti, Zr, Hf, Mn), Fe₂YSn (Y=Ti, V), and Ni₂MnSn exhibit metallic nature and Ni₂YSn (Y=Ti, Zr, Hf) and Co₂VSn show semi-conducting behavior.     

Photoemission,NMR, susceptibility and specific heat in V and A15 V3Pt

We present a study on the electronic structure of V and V₃Pt, based on photoemission (XPS and UPS) measurements and on the examination of previous band calculations, specific heat, susceptibility and NMR results. Photoemission spectra on pure V, in particular the XPS one, show a good agreement with band calculations ; the He_II spectrum exhibits a strong satellite which could be attributed to a simple Auger effect or to a resonant process. Photoemission on V₃Pt allows an evaluation of the partial densities of states (PDOS) ; the Vanadium PDOS is similar to that of pure element, at least for the upper part of the valence band ; meanwhile the Platinium partial EDOS is drastically modified. This can be understood in the framework of electronic structure of compounds involving early and late transition metals where the atomic structure seems to play an important role. An evaluation of the EDOS's at the Fermi level n(E_F) can also be tempted and compared to those obtained from the other mentioned techniques. Therefore it is suggested that for Vanadium n(E_F) is similar to that of pure element ; for Platinium n(E_F) is strongly reduced. Finally the analysis of the electronic specific heat of V, Pt and V₃Pt indicates that the parameter of electron-phonon coupling determined by the Mc Millan's theory is likely underesti:ated, due to the occurence of an estimated coupling in V and V₃Pt.     

Comparison of site-specific valence band densities of states determined from Auger spectra and XPS-determined valence band spectra in GeS (001) and GeSe (001)

Auger lineshapes of the Ge M₁M_4,5V and M₃M_4,5V and Se _M1M_4,5V transitions in GeS (001) and GeSe (001) are measured and compared to XPS valence band spectra. Distortions in both types of spectra due to inelastic scattering, analyzer and source broadening, and core level lifetime broadening are removed by deconvolution techniques. The valence band consists of three main peaks at ?2 eV, ?8 eV, and ?13 eV. There is excellent agreement of peak positions in AES and XPS spectra. The Auger lineshapes can be interpreted in terms of site-specific densities of states. They indicate that the states at ～?8 eV and at ～?13 eV are associated with the cation and anion sites respectively. The bonding p-like states at the top of the valence band have both cation and anion character. The Auger lineshapes indicate that the states closest to the valence band maximum are preferentially associated with Ge.     

(Zr,V)N复合膜的结构、力学性能及摩擦性能研究

通过非平衡磁控溅射的方法制备了不同V含量的(Zr,V)N复合薄膜, 采用EDS, XRD, XPS, 纳米压痕仪和摩擦磨损仪等对薄膜的化学成分、微结构、力学性能及摩擦性能进行了研究. 结果表明, V的加入虽未改变ZrN的fcc晶体结构, 但使薄膜的择优取向由ZrN的(200)面转变为(Zr,V)N的(111)面. 随着V含量增加, (Zr,V)N复合膜的硬度略有升高后缓慢降低, 并在含25.8 at.%V后迅速降低. 与此同时, 薄膜的常温摩擦系数亦有小幅降低. 高温摩擦研究表明, (Zr,V)N薄膜在300 ℃时出现V₂O₃, V₂O₅ 在500 ℃后形成, 其含量也随温度的提高而增加. 薄膜的摩擦系数因V₂O₅ 的形成而得到显著降低. 关键词： (Zr,V)N 薄膜 微结构 力学性能 摩擦性能     

Properties and identification of oxygen sites at the V2O5(010) surface: theoretical cluster studies and photoemission experiments

Density functional theory cluster studies and angular resolved photoemission (ARUPS) measurements were performed to examine properties of differently coordinated surface oxygens at the V₂O₅(010) surface. Calculations on embedded clusters as large as V₁₆O₄₉H₁₈ confirm the ionic character of the oxide. The computed width of the O 2sp dominated valence band region of V₂O₅ and the work function value of V₂O₅ (010) are in good agreement with the present photoemission data for freshly cleaved V₂O₅(010) samples. Cluster derived total and partial densities of states (DOS, PDOS) can be used to identify differently coordinated surface oxygens. The PDOS referring to terminal (vanadyl) oxygens is localized near the center of the valence band whereas the PDOS’s of the different bridging oxygens yield a broad distribution covering the full energy range of the valence bands. The shape of the experimental ARUPS curves for V₂O₅(010) is well reproduced by the cluster DOS. Thus, the most prominent central peak in the experimental spectrum can be assigned to emission from terminal oxygen while the peripheral peaks at the top and bottom of the valence energy region are characterized as mixtures of vanadium with bridging oxygen induced contributions. This interpretation forms a basis to get insight into microscopic features at the real V₂O₅(010) surface such as imperfections and adsorbate binding. The present study suggests that the different O 2sp derived peaks observed in the photoemission experiment may be taken as monitors of the differently coordinated oxygens at the oxide surface and can be used to study details of catalytic surface reactions in which these oxygens participate.     

Relation between 2p X-ray photoelectron and Kα X-ray emission spectra of manganese and iron oxides

The high resolution Mn and Fe Kα X-ray emission spectra (XES), and Mn and Fe 2p X-ray photoelectron spectra (XPS) for manganese and iron oxides were measured. The spectra were compared with those of [MnO₄]⁻, [Fe(CN)₆]⁴⁻ and [Fe(CN)₆]³⁻ ions. As the electronic structure of the latter compounds do not change with electron hole creation in the core levels, satellite peaks due to charge transfer are not observed in the 2p XPS spectra, and the peak profiles of metal 2p XPS and Kα XES are governed by the exchange splitting between 2p and valence electrons. The metal 2p XPS spectra of the oxides had satellite peaks, but the XES spectra had no satellites. FWHMs of the metal 2p_3/2 main peaks of the compounds being low spin states are smaller than those of metal Kα₁ XES spectra. However, FWHMs of Mn 2p_3/2 of the manganese oxide were nearly equal to those of Mn Kα₁ XES spectra, and those of Fe 2p_3/2 XPS spectra of the iron oxides are greater than those of Fe Kα₁ XES spectra.     

The characterization of Cr secondary oxide phases in ZnO films studied by X-ray spectroscopy and photoemission spectroscopy

X-ray absorption near-edge structure (XANES), X-ray emission spectroscopy (XES), and X-ray photoemission spectroscopy (XPS) were used to characterize the Cr secondary oxide phases in ZnO films that had been prepared using a co-sputtering method. Analysis of the Cr L_3,2-edge XANES spectra reveals that the intensity of white-line features decreases subtly as the sputtering power increases, indicating that the occupation of Cr 3d orbitals increases with Cr concentration in (Zn, Cr)O films. The O K-edge spectra show that the intensity of XANES features of (Zn, Cr)O films is lower than those of ZnO film, suggesting enhanced occupation of O 2p-derived states through O 2p-Cr 3d hybridization. The XES and XPS spectra indicate that the line shapes in the valence band of (Zn, Cr)O films are quite different from those of ZnO and that the Cr₂O₃ phase dominates the spinel structure of (Zn, Cr)O films increasingly as the Cr sputtering power is increased. Over all results suggest that the non-ferromagnetic behavior of (Zn, Cr)O films can be attributed to the dominant presence of Cr₂O₃, whereas the bulk comprise phase segregations of Cr₂O₃ and/or ZnCr₂O₄, which results them the most stable TM-doped ZnO material against etching.     

Electronic structures of MRhO2, MRh2O4, RhMO4 and Rh2MO6 on the basis of X-ray spectroscopy and ESCA data

X-ray O Kα, Rh Mγ and a series of M Lα emission spectra, ESCA spectra of the valence and inner levels, and O K and Rh M_III quantum-yield spectra for X-ray photoemission of the rhodium double oxides MRhO₂ (M = Li, Na, K), MRh₂ O₄ (M = Be, Mg, Ca, Sr, Ba, Co, Ni, Cu, Zn, Cd, Pb), RhMO₄ (M = V, Nb, Ta) and Rh₂MO₆ (M = Mo, W) have been measured and the dependence of electronic structure on the metal M analysed. For all compounds the inner part of the valence band corresponds to O 2p_σ + O 2p_π + Rh 4d states, while the outer part corresponds to Rh 4d. The valence band is separated from the conduction band by a narrow gap of width less than 1 eV. The first empty band, near the bottom of the conduction band, is formed by Rh 4d states, followed by a band due to vacant O 2p states.     

X-ray photoemission spectra of valence electrons in V3X and Nb3X compounds

The X-ray photoemission spectra (XPS) of the A15 type compounds V₃Au, Nb₃Os, Nb₃Ir, Nb₃Pt and Nb₃Au have been studied. The inner level binding energies of the different components and the valence electron distribution were measured. The Nb4d and the X5d energy bands of the Nb₃X compounds appear to be more and more separate with increasing atomic number of the X component. The comparison between the results from X-ray emission spectroscopy (XES) and X-ray photoelectron spectroscopy (XPS) of corresponding V₃X and Nb₃X compounds points out the similarity of their electronic structures.