Effect of laser incident energy on the structural,morphological and optical properties of Cu2ZnSnS4 (CZTS) thin films

The polycrystalline Cu₂ZnSnS₄ (CZTS) thin films have been prepared by pulsed laser deposition (PLD) method at room temperature. The laser incident energy was varied from 1.0 at the interval of 0.5–3.0 J/cm². The effect of laser incident energy on the structural, morphological and optical properties of CZTS thin films was studied by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and optical absorption. The studies reveal that an improvement in the structural, morphological and optical properties of CZTS thin films with increasing laser incident energy up to 2.5 J/cm². However, when the laser incident energy was further increased to 3.0 J/cm², leads to degrade the structural, morphological and optical properties of the CZTS thin films.     

Deposition of device quality amorphous silicon and solar cell from argon dilution of silane

In our present study hydrogenated amorphous silicon (a-Si:H) thin films and solar cells have been prepared in a conventional single chamber rf-PECVD unit from silane–argon mixture by varying radio frequency (rf) power densities from 6 mW/cm² to 50 mW/cm². By optimizing the properties of the intrinsic material we have chosen a material which is deposited at 6 mW/cm² rf power density, 0.2 Torr pressure, 175 ^oC substrate temperature and by 97% argon dilution. For this material minority carriers (holes) diffusion length (L_d) measured in the as deposited state is 180 nm and it degrades by 15% after light soaking. This high L_d value indicates that the material is of device quality. We have fabricated a single junction solar cell having the structure p-a-SiC:H/i-a-Si:H/n-a-Si:H without optimizing the doped layers. This set exhibits a mean open circuit voltage of 0.8 V and conversion efficiency of 7.7%. After light soaking conversion efficiency decreases by 15% which demonstrates that it is possible to deposit device grade material and solar cells from silane–argon mixture.     

AZO/Ag/AZO multilayer films prepared by DC magnetron sputtering for dye-sensitized solar cell application

Ag films were deposited on Al-doped ZnO (AZO) films and coated with AZO to fabricate AZO/Ag/AZO multilayer films by DC magnetron sputtering on glass substrates without heating of glass substrates. The best multilayer films have low sheet resistance of 19.8 Ω/Sq and average transmittance values of 61% in visible region. It was found that the highest figure of merit (F_TC) is 6.9 × 10⁻⁴ Ω⁻¹. For the dye-sensitized solar cell (DSSC) application, the multilayer films were used as transparent conductive electrode (multilayer films/ZnO + Eosin-Y/LiI + I₂/Pt/FTO). The best DSSC based on the multilayer films showed that open circuit voltage (V_oc) of 0.47 V, short circuit current density (J_sc) of 2.24 mA/cm², fill factor (FF) of 0.58 and incident photon-to-current conversion efficiency (η) of 0.61%. It was shown that the AZO/Ag/AZO multilayer films have potential for application in DSSC.     

Using high haze (> 90%) light-trapping film to enhance the efficiency of a-Si:H solar cells

The high haze light-trapping (LT) film offers enhanced scattering of light and is applied to a-Si:H solar cells. UV glue was spin coated on glass, and then the LT pattern was imprinted. Finally, a UV lamp was used to cure the UV glue on the glass. The LT film effectively increased the Haze ratio of glass and decreased the reflectance of a-Si:H solar cells. Therefore, the photon path length was increased to obtain maximum absorption by the absorber layer. High Haze LT film is able to enhance short circuit current density and efficiency of the device, as partial composite film generates broader scattering light, thereby causing shorter wave length light to be absorbed by the P layer so that the short circuit current density decreases. In case of lab-made a-Si:H thin film solar cells with v-shaped LT films, superior optoelectronic performances have been found (V_oc = 0.74 V, J_sc = 15.62 mA/cm², F.F. = 70%, and η = 8.09%). We observed ~ 35% enhancement of the short-circuit current density and ~ 31% enhancement of the conversion efficiency.     

Improved short-circuit photocurrent densities in dye-sensitized solar cells based on ordered arrays of titania nanotubule electrodes

We report on the synthesis of highly ordered arrays of titania nanotubules and their applications in enhanced photoelectrochemical cells. Ordered arrays of titania nanotubules of ∼120 nm external diameter, ∼100 nm internal diameter, and ∼5 μm length were fabricated on transparent conductive oxide (TCO) glass substrates by sol–gel processes using in-house prepared anodic alumina templates. After thermal bonding and template removal, the resultant nanotubule structures were applied in dye-sensitized solar cells (DSCs). Overall photoconversion efficiency of nearly 4.8% was achieved with Ru-bipyridine dye, N719, and iodolyte liquid electrolyte. This remarkable performance, for electrodes only ∼5 μm thick, is attributed to an unexpectedly high short-circuit photocurrent density of 16 mA/cm² for masked cells and up to 17 mA/cm² for unmasked cells. The enhanced short-circuit photocurrent (J_sc) is attributed to the high surface area (roughness factor ca. 1207) of the nanotubules and thus improved dye adsorption to the electrodes. The improved J_sc is also attributed to the parallel and vertical orientation of the nanostructures and thus to a well-defined electron diffusion path.     

Structural investigation of Te-based chalcogenide glasses using Raman spectroscopy

Structural changes of metals (Zn, Sb, In, Ga) and metal halides (AgI, ZnI₂, CdI₂, PbI₂, BiI₃) modified GeTe₄ glasses were investigated with the aid of Raman spectroscopy. The Raman spectra of these glasses in the frequency region between 100 cm^?1 and 300 cm^?1 display four main bands at about 124, 140, 159 and 275 cm^?1 which are contributed by Ge–Te, Te–Te, Te–Te and Ge–Ge vibration modes. The intensity of 159 cm^?1 and 275 cm^?1 bands vary with the addition of different glass modifiers. While the relative intensity of the 124 cm^?1 and 140 cm^?1 bands are insensitive to composition changes. Glass modifiers like Zn, In and Sb act as glass network unstabilizer which will disorganize the glass network by opening up the chain structures of Ge–Te and Te–Te. In the case of Ga and metal halides, Ga can open up Ge–(Te–Te)_4/2 tetrahedra and form Ga–(Te–Te)_3/2 triangle. Iodine can form covalent bonds with tellurium and decrease the tendency of microcrystal formation. Thus both Ga and iodine ultimately act as glass network stabilizer.     

Investigating gate metal induced reduction of surface donor density in GaN/AlGaN/GaN heterostructure by electroreflectance spectroscopy

The internal field of GaN/AlGaN/GaN heterostructure on Si-substrate was investigated by varying the thickness of an undoped-GaN capping layer using electroreflectance spectroscopy. The four samples investigated are AlGaN/GaN heterostructure without a GaN cap layer (reference sample) and three other samples with GaN/AlGaN/GaN heterostructures in which the different thickness of GaN cap layer (2.7 nm, 7.5 nm, and 12.4 nm) has been considered. The sheet carrier density (n_s) of a two-dimensional electron gas has decreased significantly from 4.66 × 10¹² cm⁻² to 2.15 × 10¹² cm⁻² upon deposition of a GaN capping layer (12.4 nm) over the reference structure. Through the analysis of internal fields in each GaN capping and AlGaN barrier layers, it has been concluded that the undiminished surface donor states (n_s) of a reference structure and the reduced n_s caused by the Au gate metal are approximately 5.66 × 10¹² cm⁻² and 1.08 × 10¹² cm⁻², respectively.     

Fabrication of Cu2O nanocrystalline thin films photosensor prepared by RF sputtering technique

Cuprous oxide (Cu₂O) nanocrystalline thin films were prepared on two types of substrates known as crystalline silicon and amorphous glass, by radio frequency reactive magnetron sputtering method. Scanning electron microscopy images confirmed that Cu₂O particles covered the entire surface of both substrates with smoothing distribution. The root mean square surface roughness for the prepared Cu₂O thin films on glass and Si (111) substrates is 4.16, and 3.36 nm, respectively. Meanwhile, X-ray diffraction results demonstrated that the two phases of Cu₂O and CuO were produced on Si (111) and glass substrates. The optical bandgap of Cu₂O thin films synthesised on glass substrate is 2.42 eV. Furthermore, the prepared Cu₂O nanocrystalline thin films have showed low reflectance value in the visible spectrum. Metal-Semiconductor-Metal photodetector based Cu₂O nanocrystalline thin films deposited onto Si (111) was fabricated using aluminium and platinum, with the current-voltage and photoresponse characteristic investigated under various applied bias voltages. The fabricated Metal-Semiconductor-Metal (M-S-M) photodetector had shown 126% sensitivity in the presence of 10 mW/cm² of 490 nm light with 1.0 V bias, displaying 90 and 100 ms response and recovery times, respectively. These findings have demonstrated the suitability of M-S-M Cu₂O photodetector as an affordable photosensor in the future.     

Preparation and characterization of F doped SnO2 films and electrochromic properties of FTO/NiO films

The dependence of structural and electrical properties of SnO₂ films, prepared using spray pyrolysis technique, on the concentration of fluorine is reported. X-ray diffraction, FTIR and scanning electron microscope (SEM) studies have been performed on SnO₂:F (FTO) films coated on glass substrates. Measured values of Hall coefficient and resistivity are reported. The 7.5 m% of F doped film had a resistivity of 15 × 10⁻⁴ Ω cm, carrier density of 18.7 × 10¹⁹ cm⁻³ and mobility of 21.86 cm² V⁻¹ S⁻¹. The NiO film was coated on an FTO substrate and its electrochromic (EC) behavior was studied and the results are reported and discussed in this paper.     

Interface photoluminescence of the SnO2:F/CdS:In/CdTe thin film solar cells prepared partially by the spray pyrolysis technique

CdS/CdTe solar cells were built by depositing a 200 nm layer of SnO₂:F on glass substrates by the spray pyrolysis (SP) technique, a 500 nm CdS:In layer by the same technique and a 1–1.5 μm CdTe layer by vacuum evaporation. The cells were CdCl₂ heat-treated in nitrogen atmosphere for 30 min at 350 °C. The photoluminescence (PL) spectra were measured at the CdS/CdTe interface for two cells with different values of the CdTe layer's thickness at the temperature T=60 K. A deconvolution peak fit was performed from which it is found that the peaks are characteristic of the solid solution CdS_xTe_1?x. The parabolic relation that relates the bandgap energy with the composition was used to estimate x, where x is [S]/([Te]+[S]) and [Te], [S] are the concentrations of Te and S atoms, respectively. The results show that the interface is smooth and the change of the bandgap occurs gradually. The solar cell of the thicker CdTe layer showed more interdiffusion at the CdS/CdTe interface and better photovoltaic characteristics.     

Photo-curable epoxy functionalized cyclotetrasiloxane as a gate dielectric for organic thin film transistors

We synthesized a new photo-curable organic/inorganic hybrid material, cyclotetrasiloxane (CTS) derivative containing cyclohexene-1,2-epoxide functional groups (CTS-EPOXY), and its characteristics are compared with a prototypical organic gate insulator of poly(4-vinylphenol) (PVP) in the organic thin film transistors (OTFTs) using pentacene as an active p-type organic semiconductor. Compared with PVP, CTS-EPOXY shows better insulating characteristics and surface smoothness. A metal/insulator/metal (MIM) device with the 300-nm-thick CTS-EPOXY film shows more than two orders of magnitude lower current (less than 40 nA/cm² over the voltage range up to 60 V) compared with PVP. In addition, the pentacene TFT with CTS-EPOXY as a gate dielectric layer shows slightly higher field-effect mobility of μ_FET = 0.20 cm²/V s compared to that with PVP.     

Preserving long-term emission stability of carbon nanotube field emitter using aluminum layer

Carbon nanotube (CNT) field emitter was fabricated, and then its emission stability was evaluated with three different anode structures; indium tin oxide (ITO)/glass, ZnS:Cu,Al(green phosphor)/ITO/glass, and Al/ZnS:Cu,Al/ITO/glass. It was found that the electron emission from CNTs to the phosphor layer degrades much faster than the emission to ITO layer does. The current decay time from 100 μA/cm² to 50 μA/cm² for ITO/glass and ZnS:Cu,Al/ITO/glass were 250 h and 20 h, respectively. Such rapid decay in emission current with the phosphor-coated anode was found to be attributed to the formation of Zn particles on CNTs during the field emission. However, the deposition of aluminum layer on the phosphor, in other words, using the anode structure of Al/ZnS:Cu,Al/ITO/glass recovered the stability that is comparable to that with an ITO/glass. The aluminum layer was found to efficiently prevent phosphor elements from being degassed, preserving the long-term emission stability of carbon nanotubes.     

Part 2: Ultra-short pulse laser patterning of very thin indium tin oxide on glass substrates

We investigate selective patterning of ultra-thin 20 nm Indium Tin Oxide (ITO) thin films on glass substrates, using 343, 515, and 1030 nm femtosecond (fs), and 1030 nm picoseconds (ps) laser pulses. An ablative removal mechanism is observed for all wavelengths at both femtosecond and picoseconds time-scales. The absorbed threshold fluence values were determined to be 12.5 mJ cm⁻² at 343 nm, 9.68 mJ cm⁻² at 515 nm, and 7.50 mJ cm⁻² at 1030 nm for femtosecond and 9.14 mJ cm⁻² at 1030 nm for picosecond laser exposure. Surface analysis of ablated craters using atomic force microscopy confirms that the selective removal of the film from the glass substrate is dependent on the applied fluence. Film removal is shown to be primarily through ultrafast lattice deformation generated by an electron blast force. The laser absorption and heating process was simulated using a two temperature model (TTM). The predicted surface temperatures confirm that film removal below 1 J cm⁻² to be predominately by a non-thermal mechanism.     

Comparison of electrochromic amorphous and crystalline electron beam deposited WO3 thin films

Tungsten oxide (WO₃) thin films were prepared by an electron beam deposition technique. Films were deposited onto fluorine-doped tin oxide (FTO)-coated glass substrates maintained at 523 K. The as-deposited films were found to be amorphous and crystallized after annealing at 673 K. The electrochromic and optical properties, structure, and morphology are strongly dependent on the annealing conditions. Cyclic voltammetry (C-V) was carried out in the potential range −1 to +1 V. Before and after colouration, the films were characterized by measuring transmittance and reflectance. The colouration efficiencies at 630 nm are about 39.4 cm² C⁻¹ and 122.2 cm² C⁻¹ for amorphous and crystalline films, respectively. An investigation of self-bleaching for the coloured film revealed that the film fades gradually over time.     

Fast femtosecond laser ablation for efficient cutting of sintered alumina substrates

Fast, accurate cutting of technical ceramics is a significant technological challenge because of these materials' typical high mechanical strength and thermal resistance. Femtosecond pulsed lasers offer significant promise for meeting this challenge. Femtosecond pulses can machine nearly any material with small kerf and little to no collateral damage to the surrounding material. The main drawback to femtosecond laser machining of ceramics is slow processing speed. In this work we report on the improvement of femtosecond laser cutting of sintered alumina substrates through optimisation of laser processing parameters. The femtosecond laser ablation thresholds for sintered alumina were measured using the diagonal scan method. Incubation effects were found to fit a defect accumulation model, with F_th,1=6.0 J/cm² (±0.3) and F_th,∞=2.5 J/cm² (±0.2). The focal length and depth, laser power, number of passes, and material translation speed were optimised for ablation speed and high quality. Optimal conditions of 500 mW power, 100 mm focal length, 2000 µm/s material translation speed, with 14 passes, produced complete cutting of the alumina substrate at an overall processing speed of 143 µm/s – more than 4 times faster than the maximum reported overall processing speed previously achieved by Wang et al. [1]. This process significantly increases processing speeds of alumina substrates, thereby reducing costs, making femtosecond laser machining a more viable option for industrial users.     

Analysis of current loss from a series-parallel combination of dye-sensitized solar cells using electrochemical impedance spectroscopy

Dye-sensitized solar cells (DSCs) have been proposed as a substitute for silicon crystalline solar cells which have a high manufacturing cost but it is still difficult to fabricate highly efficient DSC module assemblies. Therefore, in this work, an externally connected module assembly was investigated for industrial applications of DSCs. The equivalent circuit of a DSC was determined using typical electrical components and the cause of a current loss in the parallel connection was analyzed using electrochemical impedance spectroscopy. Also, an externally connected module has been constructed using 50 DSCs, where each cell has an active area of 8 cm² (4.62 cm × 1.73 cm) and a conversion efficiency of 4.21% under 1 sun illumination (P_in of 100 mW/cm²). As a result, the externally connected DSC module assembly has an output of 7.4 V and 200 mA, and shows stable performance, with an energy conversion efficiency of 4.44% under 0.45 sun illuminations.     

High-energy ion induced physical and surface modifications in antimony sulphide thin films

Sb₂S₃ thin films prepared by electrodeposition on indium tin oxide coated glass substrate were irradiated with 150 MeV Ni¹¹⁺ ions for various fluence in the range of 10¹¹–10¹³ ions/cm². The modifications in the structure, surface morphology and optical properties have been studied as a function of ion fluence. X-ray diffraction (XRD) analysis indicates a shift in the (2 4 0) peak position towards lower diffraction angle and a decrease in grain size with increase in ion fluence. Presence of microcracks due to irradiation induced grain splitting effect has been observed from the SEM micrograph at higher ion fluence. The optical absorbance spectrum revealed a shift in the fundamental absorption edge and the band gap energy increased from a value of 1.63 eV for as-deposited films to 1.80 eV for the films irradiated with 10¹³ ions/cm².     

Effective utilization of spray pyrolyzed CeO2 as optically passive counter electrode for enhancing optical modulation of WO3

Nanocrystalline cerium oxide (CeO₂) thin films were deposited onto the fluorine doped tin oxide coated glass substrates using methanolic solution of cerium nitrate hexahydrate precursor by a simple spray pyrolysis technique. Thermal analysis of the precursor salt showed the onset of crystallization of CeO₂ at 300 °C. Therefore, cerium dioxide thin films were prepared at different deposition temperatures from 300 to 450 °C. Films were transparent (T ~ 80%), polycrystalline with cubic fluorite crystal structure and having band gap energy (Eg) in the range of 3.04–3.6 eV. The different morphological features of the film obtained at various deposition temperatures had pronounced effect on the ion storage capacity (ISC) and electrochemical stability. The larger film thickness coupled with adequate degree of porosity of CeO₂ films prepared at 400 °C showed higher ion storage capacity of 20.6 mC cm^? 2 in 0.5 M LiClO₄ + PC electrolyte. Such films were also electrochemically more stable than the other studied samples. The Ce⁴⁺/Ce³⁺ intervalancy charge transfer mechanism during the bleaching–lithiation of CeO₂ film was directly evidenced from X-ray photoelectron spectroscopy. The optically passive behavior of the CeO₂ film (prepared at 400 °C) is affirmed by its negligible transmission modulation upon Li⁺ ion insertion/extraction, irrespective of the extent of Li⁺ ion intercalation. The coloration efficiency of spray deposited tungsten oxide (WO₃) thin film is found to enhance from 47 to 53 cm² C^? 1 when CeO₂ is coupled with WO₃ as a counter electrode in electrochromic device. Hence, CeO₂ can be a good candidate for optically passive counter electrode as an ion storage layer.     

Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays

In this paper, we present an InAs/GaSb type-II superlattice (SL) with the M-structure for the fabrication of a long-wavelength (10 μm range) infrared (LWIR) focal plane arrays (FPA), which are grown by molecular beam epitaxy (MBE). The M-structure is named for the shape of the band alignment while the AlSb layer is inserted into the GaSb layer of InAs/GaSb SL. A 320 × 256 LWIR FPA has been fabricated with low surface leakage and high R₀A product of FPA pixels by using anodic sulfide and SiO₂ physical passivation. Experiment results show that the devices passivated with anodic sulfide obviously have higher R₀A than the un-sulphurized one. The 50% cutoff wavelength of the LWIR FPA is 9.1 μm, and the R₀A is 224 Ω cm² with the average detectivity of 2.3 × 10¹⁰ cm Hz^1/2 W⁻¹.     

Enhanced performance of bi-layer Nb2O5 coated TiO2 nanoparticles/nanowires composite photoanode in dye-sensitized solar cells

Dye sensitized solar cells (DSSCs) were fabricated based on coumarin NKX-2700 dye sensitized bi-layer photoanode and quasi-solid state electrolyte sandwiched together with cobalt sulfide coated counter electrode. A novel bi-layer photoanode has been prepared using composite mixtures of 90 wt.% TiO₂ nanoparticles + 10 wt.% TiO₂ nanowires (TNPWs) as active layer and Nb₂O₅ is coated on the active layer, which acts as scattering layer. Hafnium oxide (HfO₂) was applied over the TNPWs/Nb₂O₅ photoanode film, as a blocking layer. TiO₂ nanoparticles (TNPs), TiO₂ nanowires (TNWs) and TNPWs/Nb₂O₅ were characterized by X-ray diffractometer (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM). The sensitizing organic dye coumarin NKX-2700 displayed maximum absorption wavelength (λ_max) at 525 nm, which could be observed from the UV–vis spectrum. DSSC-1 fabricated with composite bi-layer photoanode revealed enhanced photo-current efficiency (PCE) as compared to other DSSCs and illustrated photovoltaic parameters; short-circuit current J_SC = 18 mA/cm², open circuit voltage (V_OC) = 700 mV, fill factor (FF) = 64% and PCE (η) = 8.06%. The electron transport and charge recombination behaviors of DSSCs were investigated by electrochemical impedance spectra (EIS) and the results illustrated that the DSSC-1 showed the lowest charge transport resistance (R_tr) and the longest electron lifetime (τ_eff). Therefore, in the present investigation, it could be concluded that the novel bi-layer photoanode with blocking layer increased the short circuit current, electron transport and suppressed the recombination of charge carriers at the photoanode/dye/electrolyte interface in DSSC-1.