Structural, electronic, elastic and optical properties of fluoro-perovskite KZnF3

We determine the structural, electronic, elastic and optical properties of fluoro-perovskite KZnF₃ using the full potential linear augmented plane wave approach (FP-LAPW) based on the density functional theory (DFT). The exchange-correlation potential is treated by the local density approximation (LDA) and the generalized gradient approximation (GGA). The calculated structural parameters are in good agreement with the available data. We have obtained an indirect band gap. The effect of the pressure on the band gaps is investigated. We evaluate the elastic constants (C_ij), elastic moduli and the Debye temperature. The imaginary and the real parts of the dielectric function ε(ω) and some optical constants are also calculated.     

First-principles study on the electronic and optical properties of SnxGe1 − x

The electronic and optical properties of the direct band gap alloys Sn_xGe_1 − x (x = 0.000, 0.042, 0.083, 0.125, 0.167, and 0.208) have been studied by using the generalized gradient approximation in the framework of the density functional theory. The calculated lattice constants obey Vergard's law. The band structures show that the alloys have direct band gap and the band gaps can be tunable by Sn contents. The optical properties of the Sn_xGe_1 − x alloys with the physical quantities such as the complex dielectric function, the energy-loss function and the static dielectric constant, respectively, are shown to support the potential application of infrared devices in the future.     

The first principles study on the Boron antimony compound

We present the results of our calculations on Boron antimony (BSb) compound in zinc-blende (ZB) and rock-salt (RS) structures by performing ab initio calculations within the local density approximation (LDA). Some basic physical properties, such as lattice constant, bulk modulus, cohesive energy, phase transition pressure, second-order elastic constants (C_ij), phonon frequencies, and some band structural parameters are calculated and compared with those obtained with other recent theoretical works. In order to further understand the behaviour of BSb compound, we have also predicted, the pressure-dependent behaviours of the band gap, second-order elastic constants (C_ij), Young's modulus, poison ratios (ν), Anizotropy factor (A), sound velocities, and Debye temperature for this hypothetical compound.     

First-principles study of the structural, elastic, electronic and optical properties of the monoclinic BiScO3

The structural, elastic, electronic and optical properties of the monoclinic BiScO₃ are investigated in the framework of the density functional theory. The calculated structural parameters are in agreement with the experimental values. Moreover, the structural stability of BiScO₃ system has been confirmed by the calculated elastic constants. The band structure, density of states, charge transfers and bond populations are also given. The results indicate that BiScO₃ has a direct band gap of 3.36 eV between the occupied O 2p states and unoccupied Bi 6p states, and its bonding behavior is a combination of covalent and ionic nature. Finally, the absorption spectrum, refractive index, extinction coefficient, reflectivity, energy-loss function and dielectric function of the monoclinic BiScO₃ are calculated. In addition, the variation of the static dielectric constants ε₁(0) as a function of pressure for BiScO₃ is also discussed.     

Reconstruction of the conduction band in metallic hydrogen sulfide

The theory of the normal properties of a metal generalized to the case of particular properties of an electron band with a finite width for electron–phonon systems with a varying electron density of states has been used to study the normal state of the SH₃ phase of hydrogen sulfide at a pressure of 225 GPa and a temperature of 200 K. The frequency dependences of the real, ReΣ(ω), and imaginary, ImΣ(ω), parts of the selfenergy part of the Green’s function of the electron Σ(ω), as well as the electron density of states N(ε) of the Im–3m stable orthorhombic structure of SH₃ hydrogen sulfide at a pressure of P = 225 GPa, which is renormalized by the strong electron–phonon coupling, have been calculated. It has been established that a part of the electron conduction band of the SH₃ phase of hydrogen sulfide adjacent to the Fermi level undergoes renormalization-induced reconstruction in the form of a number of energy pockets with the widths equal to fractions of the characteristic phonon energies of the system.     

Infrared spectroscopy of solids

For materials like small gap semiconductors or intercalated layered compounds the general form of the complex dielectric function is: ϵ(ω) = ϵ_x + Δϵ_inter + Δϵ_intra + Δϵ_ph, where ϵ_∞is the high frequency dielectric constant due to all interband transitions except the uppermost valence band and the lowest conduction band, Δϵ_inter is the contribution to the dielectric constant due to this two bands in particular, Δϵ_intra is the contribution due to intraband free carrier transitions and Δϵ_ph is the contribution due to lattice vibrations. The contribution from transitions between valence and conduction bands to the imaginary part of the dielectric function Δϵ_inter(ω,T) for a narrow gap material can be readily calculated in the random phase approximation (RPA) formalism. The real part Δϵ_inter is obtained by performing the Kramers-Kronig inversion on the expression Δϵ_inter. Dielectric function of HgTe between 8 and 300 K is discussed. The interband contribution to the complex dielectric function in a layered intercalation compound is also examined. Pure graphite, first and second stage compounds are treated as an example. Reflectivity and magnetoreflectivity spectra simultaneously determining the plasma and the cyclotron frequencies, allow one to measure the free carrier density, hence the Fermi level, and the effective mass of the carriers. The variation of the effective mass as a function of the position of the Fermi level traces the energy bands dispersion relation. An example of such investigations is given for PbSe layered materials like Bi₂Se₃ are also studied by infrared reflectivity spectroscopy. Intercalation of such materials increases the free carrier population which consequently moves the Fermi level up in the conduction band. Analysis of reflectivity spectra allows an accurate determination of the free carrier concentration and gives a useful tool for the investigation of atom insertion in layered materials. Recent experiments on the intercalation of Li in a certain number of layered materials will be presented. In the frame of the classical theory of independent harmonic oscillators, the phonon contribution to the dielectric function is given by the sum of transverse modes for each oscillator with the corresponding damping parameters and oscillator strength. The complex dielectric function can then be written as a set of separate equations for the real and imaginary parts of the wave-number-dependent dielectric function. In the spectral region when phonon and plasmon frequencies may coincide a strong plasmon-phonon coupling will be experienced. In a simple model with one LO and one TO frequency, one expects two singularities at the two maxima of the function 1m −ϵ⁻¹; representing longitudinal modes. The frequencies generally labeled ω₊ and ω_- correspond to longitudinal oscillations with the lattice and electron plasma vibrating, respectively, in phase and 180° out of phase. In small gap materials the situation is more complex. Because of the particular band structure, the contribution Δϵ_inter(ω) must be included. In some cases it also becomes necessary to include additional oscillators with strong polar character corresponding to a particular defect or to additional vibrations. The implications of all these fundamental concepts in the investigation of high Tc materials is discussed and examples given.     

Phonon dispersion and dielectric behaviour of mixed alkali halide crystal NaCl0.5Br0.5

In the present paper we have calculated the phonon dispersion curves and dielectric constants, their volume derivatives and the Gruneisen parameters of the mixed alkali halide NaCl_0.5Br_0.5, using the extended three body force shell model. The results of dielectric constants, their volume derivatives and Gruneisen parameters are found to agree reasonably well with the experimental values, which establishes the validity of the three body charge transfer parameter. With this concept the phonon dispersion curves are obtained in all the three symmetry directions (q,o,o), (q,q,o) and (q,q,q), which will be of interest for experimental workers, since no experimental values have so far been obtained for phonon frequencies.     

Estimation of the influence of ionic dielectricity on the dynamic superconducting order parameter

We consider the influence of an ω-dependent ionic dielectric constant ?(ω) on the properties of a superconductor. Assuming that the pairing interaction is proportional to ?² we have solved the Eliashberg equations for this case, both for imaginary and real frequencies. The interaction potential depends on a coupling constant λ and on a longitudinal phonon frequency Ω. The dielectric constant is assumed to be independent of wavevector q, and to depend on frequency through the expression: ?(ω) = (ω² - ω²_long)/(ω² - ω²_trans), where ω_long, ω_trans are the frequencies of optical phonons of the dielectric. We find that along the imaginary frequency axis (but not for real frequencies) the weighted phonon propagator can be modeled by an appropriate choice of a cutoff frequency and an effective coupling constant. The influence of ?(ω) on T_c, the gap δ(ω), and the renormalization function Z(ω) are studied and it is found that these quantities increase significantly with the dielectric constant.     

Electronic and lattice vibrational properties of cubic BaHfO3 from first principles calculations

Through first principles calculations, we investigated the electronic structure and lattice vibrational properties of BaHfO₃. The optimized lattice constant of BaHfO₃ is in agreement with experimental and theoretical results. Our results show that cubic BaHfO₃ is an insulator with an indirect band gap of 3.5 eV. Besides, the calculation using the screened exchange local density approximation (sX-LDA) has been performed with the predicted minimum gap of 5.3 eV. The phonon dispersion curves of BaHfO₃ were also calculated. All positive phonon frequencies in the Brillouin zone were found, indicating the stability of BaHfO₃ structure.     

Vibrational, dielectric and scintillation properties of YAlO3

Vibrational and dielectric properties of YAlO₃ are investigated within the framework of density functional perturbation theory. The calculated zone center phonon frequencies and dielectric constants are in good agreement with available experimental data. Based on the theoretical values of the dielectric constants and the highest longitudinal IR phonon energy and using the phenomenological model of Lempicki and Wojtowicz, we investigate the scintillation properties of the YAlO₃.     

Mg2Sn电子结构及热力学性质的第一性原理计算

采用基于第一性原理的赝势平面波方法系统地计算了Mg₂Sn基态的电子结构、弹性常数和热力学性质.计算结果表明Mg₂Sn的禁带宽度为0.1198eV.运用线性响应方法确定了声子色散关系和态密度,得出Mg₂Sn的热力学性质如等容比热和德拜温度.计算Mg₂Sn的热导率并与实验数据相比较. 关键词： 第一性原理 电子结构 弹性常数 热力学性质     

Electronic structure of (BP)n/(BAs)n (0 0 1) superlattices

An accurate ab initio full potential linear muffin-tin orbital method has been used to investigate the structural, electronic and optical properties of BP, BAs and their (BP)_n/(BAs)_n superlattices (SLs). The exchange-correlation potential is treated with the local density approximation of Perdew and Wang (LDA-PW). The calculated structural properties of BP and BAs compounds are in good agreement with available experimental and theoretical data. It is found that BP, BAs and their alloys exhibit an indirect fundamental band gap. The fundamental band gap decreases with increasing the number of monolayer n. The optical properties show that the static dielectric constant significantly decreases in superlattices compared to their binary compounds.     

Studies of the structural,electronic and dielectric properties of Ca1−xSrxTiO3

The lattice constants, band structure and dielectric properties of Ca_1−xSr_xTiO₃ (0<x<1) (CSTO) have been studies by using the first-principles implemented with the GGA-PBEsol method. The calculation results shows that the lattice constants of CSTO obeys the Vegard model while the energy gap of CSTO shows a decreasing trend with the changing molar fraction x. The real and imaginary parts of the dielectric function and the static dielectric constant of the CSTO, optical permittivity and the static refractive index, are given to support the potential applications of the compounds in the future.     

Optical absorption in a heavily doped semiconductor with a narrow forbidden band

The coefficient of interband absorption in a heavily doped, strongly compensated semiconductor with a narrow forbidden band was calculated for emission frequencies ?ω which are smaller than the width? _g of the forbidden band. If the width of the forbidden band is smaller than the characteristic energy w₀ of the random field produced by randomly distributed impurities, the optical absorption gap is missing and the coefficient of absorption increases with the frequency, with the increase being basically proportional toω.     

Mechanical stability and optoelectronic behavior of BeXP2 (X=Si and Ge) chalcopyrite

We have conducted a first-principles study on the structural, electronic, optical and elastic properties of BeSiP₂ and BeGeP₂ chalcopyrite compounds. Using the density functional theory (DFT), implemented in both full potential linear muffin-tin orbital (FP-LMTO) and Vienna Ab initio simulation (VASP) packages. The FP-LMTO is used for the determination of the structural, electronic and optical properties, while the VASP is used to determine the elastic constants that give indications about the material stability. The obtained equilibrium structural parameters are in good agreement with available results. An investigation of the band gap indicates that our compounds possess a semiconductor behavior with direct band gap for BeSiP₂ and with an indirect band gap for BeGeP₂. The energy band gaps decreased by changing Be atoms from Si to Ge. We have calculated the dielectric function ε(ω). The obtained results show that these materials are promising semiconductors for photovoltaic applications. For the elastic properties, the single-crystal elastic constants C_ij, shear anisotropic factors A, as well as polycrystalline bulk, shear and Young's modulus (B, G and E) and Poisson's ratio v have been predicted. The generalized elastic stability criteria for a tetragonal crystal are well satisfied, indicating that BeSiP₂ and BeGeP₂ are mechanically stable in the chalcopyrite structure.     

Study on the electronic structure and optical properties of different Al constituent Ga1−xAlxAs

Using quantum mechanics GASTEP software package based on the first principle density function theory, the electronic structure and optical properties of Ga_1−xAl_xAs at different Al constituent are calculated. Result shows that with the increase of Al constituent, the band gap of Ga_1−xAl_xAs increases and varies from direct band gap to indirect band gap; the absorption band edge and the absorption peak move to high-energy side; the static reflectivity decreases. With the increasing of the incident photon energy, Ga_1−xAl_xAs shows metal reflective properties in certain energy range. With the increasing of Al constituent, static dielectric constant decreases and the intersection of dielectric function and the x-axis move towards high-energy side; the peak of energy loss function move to low-energy side and the peak value reduces.     

Electronic and optical properties of Fe<Subscript>2</Subscript>SiO<Subscript>4</Subscript> under pressure effect: ab initio study

We report first-principles studies the structural, electronic, and optical properties of the Fe₂SiO₄ fayalite in orthorhombic structure, including pressure dependence of structural parameters, band structures, density of states, and optical constants up to 30 GPa. The calculated results indicate that the linear compressibility along b axis is significantly higher than a and c axes, which is in agreement with earlier work. Meanwhile, the pressure dependence of the electronic band structure, density of states and partial density of states of Fe₂SiO₄ fayalite up to 30 GPa were presented. Moreover, the evolution of the dielectric function, absorption coefficient (α(ω)), reflectivity (R(ω)), and the real part of the refractive index (n(ω)) at high pressure are also presented.     

Ternary mixed crystal effects on interface optical phonon and electron-phonon coupling in zinc-blende GaN/AlxGa1−xN spherical quantum dots

The theoretical investigations of the interface optical phonons, electron–phonon couplings and its ternary mixed effects in zinc-blende spherical quantum dots are obtained by using the dielectric continuum model and modified random-element isodisplacement model. The features of dispersion curves, electron–phonon coupling strengths, and its ternary mixed effects for interface optical phonons in a single zinc-blende GaN/Al_xGa_1−xN spherical quantum dot are calculated and discussed in detail. The numerical results show that there are three branches of interface optical phonons. One branch exists in low frequency region; another two branches exist in high frequency region. The interface optical phonons with small quantum number l have more important contributions to the electron–phonon interactions. It is also found that ternary mixed effects have important influences on the interface optical phonon properties in a single zinc-blende GaN/Al_xGa_1−xN quantum dot. With the increase of Al component, the interface optical phonon frequencies appear linear changes, and the electron–phonon coupling strengths appear non-linear changes in high frequency region. But in low frequency region, the frequencies appear non-linear changes, and the electron–phonon coupling strengths appear linear changes.     

Elastic,electronic structure,and optical properties of orthorhombic Na<Subscript>3</Subscript>AlF<Subscript>6</Subscript>: a first-principles study

First-principles investigation of elastic, electronic, and optical properties of orthorhombic Na₃AlF₆ has been carried out by DFT using plane-wave pseudo-potentials within the LDA and GGA. Calculated lattice parameters agree well with experimental results. From calculated elastic constants, Na₃AlF₆ is a mechanically stable anisotropic and behaves in a ductile manner. Electronic structure analysis indicates that Na₃AlF₆ behaves as an insulator with a direct band gap of 6.065 eV in LDA and 5.868–5.949 eV in GGA. DOS, population analysis, and charge densities difference indicate that Al-F bonds are mainly ionic as well as partially covalent due to the hybridization of F-2p and Al-3s (3p) states. Moreover, the imaginary part of calculated dielectric function ε₂(ω) shows three prominent peaks due to the inter band transitions F 2p states→Na 3s states. From calculated ε (ω), other optical properties such as reflectivity and refractive index are also obtained up to the photon energy range of 40 eV.     

Structural, electronic and optical properties of orthorhombic distorted perovskite TbMnO3

This paper calculates the structural parameters, electronic and optical properties of orthorhombic distorted perovskite-type TbMnO3 by first principles using density functional theory within the generalised gradient approximation. The calculated equilibrium lattice constants are in a reasonable agreement with theoretical and experimental data. The energy band structure, density of states and partial density of states of elements are obtained. Band structures show that TbMnO3 is an indirect band gap between the O 2p states and Mn 3d states, and the band gap is of 0.48 eV agreeing with experimental result. Furthermore, the optical properties, including the dielectric function, absorption coefficient, optical reflectivity, refractive index and energy loss spectrum are calculated and analysed, showing that the TbMnO3 is a promising dielectric material.