Determination of the thickness and optical constants of amorphous Ge–Se–Bi thin films

The effect of varying bismuth concentration on the optical constants of amorphous Ge₂₀Se_{80? x} Bi _x (where x = 0, 3, 6, 9 and 12 at%) thin films prepared by thermal evaporation has been investigated. The transmission spectra T(λ) of the films at normal incidence were obtained in the spectral region from 400 to 2500 nm. An analysis proposed by Swanepoel [J. Phys. E: Sci. Instrum. 16 (1983) p.1214], based on the use of the maxima and minima of the interference fringes, was applied to derive the real and imaginary parts of the complex index of refraction and also the film thickness. Increasing bismuth content was found to affect the refractive index and extinction coefficient of the Ge₂₀Se_{80? x} Bi _x films. Optical absorption measurements show that the fundamental absorption edge is a function of composition. With increasing bismuth content, the refractive index increases while the optical band gap decreases.     

Photoinduced effects on the optical constants of a-Ge–Se–Bi chalcogenide glassy thin films

In addition to the conversion from p-type to n-type conductivity that occurs in Ge–Se–Bi thin films when Bi is incorporated in a certain concentration. We found that, when these films were illuminated to UV light, after being annealed at glass transition temperature T _g, the photobleaching is dominant for Ge₂₀Se_80?x Bi _x (x=0, 2.5, and 5 at.%), while for Ge₂₀Se_72.5Bi_7.5 photodarkening is dominant. The photoinduced changes in the optical constants were studied. The refractive index (n) has been analysed according to the Wwmple–DiDominico single oscillator model and the values of E _o and E _d for exposed and unexposed films were determined, respectively. The photostructural effects were discussed in the light of single–double well model proposed by Tanaka and chemical bond approach.     

Effect of SnI2 on the thermal and optical properties of Ge–Se–Te glasses

A systematic series of (Ge₂₀Se₁₅Te₆₅)_1?x–(SnI₂)_x (x = 0, 0.05, 0.1, 0.15) chalcogenide glasses have been prepared. The amorphous nature can be confirmed by XRD and SEM. With the SnI₂ content increasing, the indirect optical band gaps are decreased from 0.662 to 0.622 eV according to Tauc laws. The introduction of SnI₂ makes the glasses much easier to prepare and more stable against crystallization, making them drawable as optical fibers. The highest ΔT (130 °C) value for (Ge₂₀Se₁₅Te₆₅)_0.9–(SnI₂)_0.1 glass composition can be obtained. A slight red-shifting of the long-wavelength cutting-off edge from 18.4 to 19.4 μm was shown and it seems that SnI₂ in these glasses offers the improvement in the far-infrared properties.     

Measurement of the energy transfer and upconversion constants in Er–Yb-doped phosphate glass

A simple method to measure the ytterbium-to-erbium energy transfer and the co-operative upconversion constants in a phosphate laser glass is proposed. The technique is based on the experimental acquisition of the luminescence decay from the Er3+ 4I13/2 metastable level at 1.5m as a function of time and on a suitable fit of the experimental data. The fitting procedure relies on a simplified model of the Er–Yb system and makes use of a numerical solution of the rate equations to describe the dynamics of the populations, showing considerable sensitivity to the fitting parameters. The results obtained are in fairly good agreement with previous data reported in the literature.     

Investigation of the optical constants of arsenic chalcogenide films in the wavelength range 0.5–2.5 μm

Thin films of chalcogenide glasses deposited on quartz glass substrates by thermal evaporation in vacuum have been investigated. The dependences n(λ) and k(λ) for films of different composition have been determined from the transmission spectra. Expressions of the n = A + BL + CL ² + Dλ ² + Eλ ⁴ type (L = (λ ² ? 0.028)^?1 and A, B, C, D, and E are constants) for calculating the refractive indices of As₂Se₃, AsSe₄, AsS₄, and AsS_16.2Se_16.2 films in the wavelength range from 0.5 to 2.5 μm are reported.     

Thermal Conductivity and Thermoelectric Power of Compounds in the Cu–Ge–As–Se System

Technical Physics - The influence of temperature (in the interval of 300–400 K) and concentrations on the electrical conductivity, thermal conductivity, and thermoelectric power of copper...     

Kramers–Kronig analysis of the optical constants of magnetite,pyrite, and chalcopyrite in the microwave range

The optical constants of a series of ore minerals (pyrite, magnetite, and chalcopyrite) have been analyzed in the microwave range using the Kramers–Kronig method. The spectral dependences of the reflectance of these minerals in a wide frequency range (from deep UV to microwave) have been plotted based on numerous experimental data from different sources. These dependences made it possible to calculate the optical constants of the minerals under study in a frequency range of 12–145 GHz and compare them with the results of the theoretical and laboratory studies published in different sources.     

Study of cohesive,electronic and magnetic properties of the Ni–In intermetallic system

Cohesive, electronic and magnetic properties of the intermetallic system Ni–In, specifically the stable phases Ni₃In-hP8, Ni₂In-hP6, NiIn-hP6 and Ni₂In₃-hP5, have been investigated. At present, these materials are of great interest in connection to the application of the In–Sn alloys as lead-free micro-soldering alloys, and considering Ni as the contact material. In spite of this, scarce literature regarding basic thermodynamic properties of the Ni–In intermetallic phases has been found. Full-Potential Linear Augmented Plane Wave method (FP-LAPW) within the framework of the Density Functional Theory (DFT) with exchange and correlation effects in the Generalized Gradient (GGA) and Local Density (LDA) approximations is used. All the calculations include spin polarization. Structural parameters, formation energies and cohesive properties of the different phases are studied through minimization of internal parameters. The electronic density of states (DOS) is analyzed for each optimized structure. We found that the NiIn-hP6 phase is the most stable one and only the Ni₃In-hP8 phase exhibits magnetic properties.     

Optical constants of quaternary Ge–As–Te–In amorphous thin films evaluated from their reflectance spectra

Thin films of amorphous Ge₉As₂₀Te_{71? x} In _x with different compositions (x = 0, 3, 6 and 9 at. %) were obtained by deposition onto glass substrates by thermal evaporation. The reflection spectra, R(λ), of the films were obtained in the spectral region from 400 to 2500 nm. A straightforward analysis proposed by Ruiz-Perez et al., based on the use of the maxima and minima of the interference fringes, has been applied to derive the real and imaginary parts of the complex index of refraction, the thickness and the thickness variation of the studied films. Increasing In content is found to affect the refractive index and the extinction coefficient of the films. Optical absorption measurements were used to obtain the fundamental absorption edge as a function of composition. With increasing In content, the refractive index decreases, whereas the optical band gap, E_g , increases. The relationship between E_g and the chemical composition of the Ge₉As₂₀Te_{71? x} In _x system is discussed in terms of the cohesive energy, the average heat of atomization, H _s , and the average coordination number, N _r .     

Optimization of the cell in the ion–optical system of a powerful source of protons with energy 15 keV

We have described the results of numerical investigations of different versions of a three-electrode elementary slit cell for the formation a hydrogen ion beam with a relatively low energy and a high emission current density. The version of the cell chosen from the results of these investigations makes it possible to obtain a hydrogen atom beam with an energy of 15 keV, an ion current density of ~500 mA/cm², and an angular divergence of 24 mrad.     

Contribution of π-bonds to effective charges,cohesive energy,and force constants of graphene-like compounds

For 14 two-dimensional hexagonal compounds IV–IV and III–V, analytical expressions have been obtained using the Harrison bond-orbital method for the contribution from the π-interaction to the polarity of interatomic bonds, the effective atomic and transverse dynamical charges and their dependences on the deformation, as well as to the binding energy, the cohesive energy, and the central and non-central force constants.