Effect of NaF on optical and structural properties of CdxZn1−xS nano crystalline films

This work investigates the effect of NaF on optical and structural properties of nano crystalline Cd_xZn_1?xS films. The Cd_xZn_1?xS films are prepared through chemical bath deposition (CBD) technique in aqueous alkaline bath and their subsequent condensation on substrates. The as-obtained samples are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–VIS absorption spectroscopy. Micro structural features, obtained from XRD analysis confirm the formation of cubic phase of undoped as well as NaF doped Cd_xZn_1?xS nano particles while SEM observations depict non-uniform distribution of grains. These results show the average grain size of pure as well as NaF doped samples to range from 50 to 90 nm. Tauc's plots, extracted from absorption spectra exhibit absorption to be dominating mainly in blue-green region of visible spectrum. The room-temperature photoluminescence (PL) spectra of Cd_xZn_1?xS samples show a peak around 425 nm, which gets blue shifted for doped sample indicating improvement in PL properties on its addition.     

Phase transformations and structural characteristics of AL–Cu–Co(–Si) decagonal phase

The phase transformations and structural characteristics of the Al-Cu-Co-Si alloy have been studied by neutron diffraction and high-resolution electron microscopy. The Al₆₅Cu_17.5Co_17.5 decagonal phase is stable in the temperature range between 973 K and 1350 K. At the low-temperature end, it relaxes to a microcrystalline approximant structure. At the high-temperature end, it melts directly into liquid. Two distinct orthorhombic phases are identified in the Al₆₃Cu_17.5Co_17.5Si₂ microcrystalline structure. They are composed of several structure units that can also construct the Penrose tiling. Because of lack of units, a single orthorhombic phase cannot undergo the transformation towards the high-temperature decagonal phase. An analysis of the orientation relationships between the CsCl and orthorhombic phases leads to the definition of Penrose tiling-like subnetworks inside the orthorhombic unit cells so that these orthorhombic phases can be regarded as the periodic patchworks of quasiperiodic subnetworks.     

Photoconductivity and photoluminescence in chemically deposited films of (Cd–Zn)S:CdCl2, Ho

Results of SEM, XRD, optical absorption/reflectance, photoconductivity (PC), and photoluminescence (PL) are presented for (Cd–Zn)S:CdCl₂, Ho films prepared by chemical deposition technique by direct dipping either at room temperature (RT) or at 60 °C in a water bath. SEM studies show the presence of non-uniform distribution of particles. XRD studies show lines of CdS, ZnS along with lines of CdCl₂ and Ho. PL is found to be pronounced in films of RT preparation and for those prepared at 60 °C, PC is higher. Optical absorption/reflectance studies show the presence of Ho corresponding to the transition ⁵I₈→⁵F₁/⁵G₆. Emissions corresponding to the transitions ⁵S₂/⁵ F₄→⁵ I₈, ⁵G₅→⁵I₇, and ³H₅→⁵I₈ are observed in PL emission spectra.     

Cu2ZnSnSe4 films by selenization of Sn–Zn–Cu sequential films

This paper deals with the formation of Cu₂ZnSnSe₄ (CZTS) in the process of selenization of metal precursor layers in elemental selenium vapour. Metallic precursors were sequentially evaported from Sn, Zn and Cu sources. Precursor Sn–Zn–Cu films have a “mesa-like” structure and consist mainly of Cu₅Zn₈ and Cu₆Sn₅ phases. It was confirmed that the formation of different binary copper selenides is the dominating process of selenization in elemental Se vapour at temperatures up to 300 °C. The formation of kesterite CZTS films begins at 300 °C and dominates at higher temperatures, always resulting in multiphase films that consist of high-quality Cu₂ZnSnSe₄ crystals and of a separate phase of ZnSe.     

Microstructure and electro-optical properties of sol–gel derived Cd-doped ZnO films

The microstructure, and the electrical and optical properties of undoped zinc oxide (ZnO) and cadmium-doped ZnO (CZO) films deposited by a sol–gel method have been investigated. The films have a polycrystalline structure with hexagonal wurtzite ZnO. Scanning electron microscopy (SEM) images indicated that the films have a wrinkle network with uniform size distributions. The elemental analyses of the CZO films were carried out by energy dispersive X-ray analysis. The fundamental absorption edge changed with doping. The optical band gap of the films decreased with Cd dopant. The optical constants of the films such as refractive index, extinction coefficient and dielectric constants changed with Cd dopant. A two-probe method was used to investigate the electrical properties, and the effect of Cd content on the electrical properties was investigated. The electrical conductivity of the films was improved by incorporation of Cd in the ZnO film.     

Genetic programming modelling for the electrical resistivity of Cu–Zn thin films

Using quantum hydrodynamic (QHD) model and standard reductive perturbation method, we have investigated the formation and characteristics of space-charge solitary waves and double layers in n-type compensated drifting semiconductor plasma with varying doping profiles. Through numerical analysis, it is shown that the structures of space-charge solitary waves and double layers depend significantly on electron drift and compensation parameter which measures a comparative proportion of the donor, acceptor and intrinsic ion concentrations.     

Fabrication and temperature-dependent photoluminescence spectra of Zn–Cu–In–S quaternary nanocrystals

A series of Zn-Cu-In-S nanocrystals （ZCIS NCs） are prepared and the optical properties of the ZCIS NCs are tuned by adjusting the reaction time. It is interesting to observe that the temperature-dependent photoluminescence （PL） spectra of the ZCIS NCs show a redshift with decreasing intensity at low temperature （50-280 K） and a blueshift at high temperature （318--403 K）. The blueshift can be explained by the thermally active phonon-assisted tunneling from the excited states of the low-energy emission band to the excited states of the high-energy emission band.     

Effect of Cd content on the structural characteristic and some physical properties of Zn1−x Cd x Se

The present work focuses on the structural, optical, and electrical properties of Zn_1?x Cd _x Se (0.1≤x≤0.25) compounds. The compounds were synthesized by solid state reaction. X-ray diffraction (XRD) patterns confirm that the samples have cubic single phase (zinc-blende) crystal structure with space group F-43m. The crystal structural parameters were refined by the Rietveld method using the FullProf program. It was found that the lattice parameters increase linearly with increasing the Cd content and obeys Vegard’s law. The refined values of the crystallite size and the bond lengths increase with increasing the Cd content. The energy band gap of the samples has been calculated and it was found that it decreased as Cd increased. The conductivity of the samples increases with increasing both of composition parameter x and temperature, and showing semiconducting behavior.     

Influence of Mn doping on structural and optical properties of ZnO nano thin films synthesized by sol–gel technique

Undoped and Mn-doped ZnO samples with different percentages of Mn content (1, 5 and 10?at%) were synthesized by a dip-coating sol?Cgel method. We have studied the structural, chemical and optical properties of the samples by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-visible spectroscopy. The XRD spectra show that all the samples are hexagonal wurtzite structures. We note that doping favors c-axis orientation along (002) planes. Up to 5?at% of Mn doping level, the c-axis lattice parameter shifts towards higher values with the increase of manganese content in the films. The expansion of the lattice constant of ZnO?CMn indicates that Mn is really doped into the ZnO. The SEM investigations of all samples revealed that the crystallites are of nanometer size. The surface quality of the ZnO?CMn film increases with Mn doping but no significant change of the grain size is observed from SEM images. The transmittance spectra show that the transparency of all the samples is greater than 85?%. We note, also, that a small doping (1?%) lowered the refractive index while the thickness of the layers and the gap increase. However, on raising the proportion of Mn beyond 5?%, practically the same values of index and gap as pure ZnO are found.     

Synthesis and performance of Zn–Ni–P thin films

The electroplating of Zn–Ni–P thin film alloys from a sulfate bath containing phosphoric and phosphorous acid was investigated. The bath composition and the deposition parameters were optimized through Hull cell experiments, and the optimum experimental conditions were determined(p H = 2, temperature = 298–313 K, zinc sulfate concentration =30 g·L-1, EDTA concentration = 15 g·L-1, and current density = 1.0–2.0 A·dm-2). The SEM analysis of the coating deposited from the optimum bath revealed fine-grained deposits of the alloy in the presence of EDTA. Optical microscopy analysis indicated an electrodeposited thin film with uniform thickness and good adhesion to the steel substrate. The good adherence of the coatings was also demonstrated by the scratch tests that were performed, with a maximum determined value of 25 N for the critical load. Corrosion resistance tests revealed good protection of the steel substrate by the obtained Zn–Ni–P coatings, with values up to 85.89% for samples with Ni contents higher than 76%. The surface analysis of the thin film samples before and after corrosion was performed by X-ray photoelectron spectroscopy(XPS).     

Growth and luminescent properties of (Lu–Y)AlO3:Ce single crystalline films

The work is dedicated to the development of scintillating screens based on single crystalline films (SCF) of Ce doped Lu–Y–Al perovskites grown by the liquid phase epitaxy method. We show in this work that Lu_1−xY_xAP:Ce SCF with very good structural and optical perfection can be grown from the PbO-based flux onto YAP substrates in all range of x-values. We also found the Lu_1−xY_xAP:Ce SCF can be crystallized by LPE method from the lead free BaO–B₂O₃–BaF₂ flux onto YAP substrates in the range of x values up to 0.4 formula units.     

Photoconductive properties of some chemically deposited (Cd–Pb)s films

Films of (Cd–Pb)S have been prepared using chemical deposition in aqueous alkaline bath and their subsequent condensation on substrates. Important achievements in terms of electrical response, optical absorption and photoconductivity (PC) excitation spectra, SEM, XRD and photoluminescence (PL) studies are presented and discussed. From the photocurrent curves, the ratio I_PC (saturated photocurrent)/I_DC (dark current) was observed to be of the order of 10⁶ for the systems prepared with CdCl₂, and to be 10⁷ when doped with samarium nitrate. Values of trap depth E, lifetime and mobility are evaluated from the PC decay. Band-gaps are determined from the two spectra. Diffraction lines in XRD studies are associated to CdS and PbS, and according to SEM studies layered growth of the films takes place. PL of samarium doped (Cd–Pb)S films shows an emission peak in the green-yellow region under 365?nm excitation. The PL brightness decreases with temperature.     

Cyclic deformation and fatigue cracking behaviour of polycrystalline Cu,Cu–10 wt% Zn and Cu–32 wt% Zn

The cyclic deformation behaviour of polycrystalline Cu, Cu–10 wt% Zn and Cu–32 wt% Zn was systematically investigated in the plastic strain amplitude range of 1 × 10^?4–4 × 10^?3. The differences in the cyclic stress–strain (CSS) responses and fatigue cracking behaviour between Cu, Cu–10 wt% Zn and Cu–32 wt% Zn were compared. It was found that the occurrence of a cyclic saturation for Cu–10 wt% Zn and Cu–32 wt% Zn strongly depends on the applied strain amplitude, whereas polycrystalline Cu always displays cyclic saturation. Surface deformation morphologies were analyzed by scanning electron microscopy (SEM). One of the major features observed is that the slip bands become increasingly homogenous with Zn addition. The fatigue cracks were found to frequently nucleate along the annealing twin boundaries (TBs) in Cu–10 wt% Zn and Cu–32 wt% Zn, but not in polycrystalline Cu. Based on these experimental results, the cyclic deformation response and fatigue cracking behaviour are discussed, and a developed TB cracking mechanism is proposed to explain the difference in fatigue cracking mechanisms in Cu, Cu–10 wt% Zn and Cu–32 wt% Zn.     

Luminescent and scintillation properties of the Pr3+ doped single crystalline films of Lu3Al5−xGaxO12 garnet

The Pr³⁺ d–f luminescence was investigated in the single crystalline films (SCF) of Lu₃Al_5−xGa_xO₁₂:Pr garnet solid solution at x = 1–3, grown by the liquid phase epitaxy (LPE) method from the melt-solution based on the PbO–B₂O₃ flux. The shape of CL spectra and decay kinetics of Pr³⁺ ions in Lu₃Al_5−xGa_xO₁₂ SCFs strongly depend on the total gallium concentration x and distribution of Ga³⁺ ions between the tetrahedral and octahedral position of the garnet host. The best scintillation properties of Lu₃Al_5−xGa_xO₁₂:Pr SCF are achieved at the nominal Ga content in melt-solution in the x = 2–2.5 range.     

Hume-Rothery electron concentration rule across a whole solid solution range in a series of gamma-brasses in Cu–Zn,Cu–Cd,Cu–Al,Cu–Ga,Ni–Zn and Co–Zn alloy systems

The aim of the present work is to examine if the Hume-Rothery stabilisation mechanism holds across whole solid solution ranges in a series of gamma-brasses with especial attention to the role of vacancies introduced into the large unit cell. The concentration dependence of the number of atoms in the unit cell, N, for gamma-brasses in the Cu–Zn, Cu–Cd, Cu–Al, Cu–Ga, Ni–Zn and Co–Zn alloy systems was determined by measuring the density and lattice constants at room temperature. The number of itinerant electrons in the unit cell, e/uc, is evaluated by taking a product of N and the number of itinerant electrons per atom, e/a, for the transition metal element deduced earlier from the full-potential linearised augmented plane wave (FLAPW)-Fourier analysis. The results are discussed within the rigid-band model using as a host the density of states (DOS) derived earlier from the FLAPW band calculations for the stoichiometric gamma-brasses Cu₅Zn₈, Cu₉Al₄ and TM₂Zn₁₁ (TM = Co and Ni). A solid solution range of gamma-brasses in Cu–Zn, Cu–Cd, Cu–Al, Cu–Ga and Ni–Zn alloy systems is found to fall inside the existing pseudogap at the Fermi level. This is taken as confirmation of the validity of the Hume-Rothery stability mechanism for a whole solute concentration range of these gamma-brasses. An exception to this behaviour was found in the Co–Zn gamma-brasses, where orbital hybridisation effects are claimed to play a crucial role in stabilisation.     

Characteristics of the crystalline and luminescence properties of a-plane GaN films grown on γ-LiAlO_2(302) substrates

A-plane GaN films are deposited on(302) γ-LiAlO 2 substrates by metalorganic chemical vapor deposition(MOCVD) . The X-ray diffraction(XRD) results indicate that the in-plane orientation relationship between GaN and LAO substrates is [010] LAO [0001] GaN and [203] LAO [1100] GaN with 0.03% and 2.85% lattice mismatch,respectively. Raman scattering results indicate that the strain in the films decreases along with the increase in the thickness of the films. In addition to the band edge emission at 3.42 eV,defects-related luminescence at 3.35 eV is observed in the photoluminescence(PL) spectra. The cathodoluminescence(CL) spectra indicate that the 3.35-eV emission is related to the V pits.     

Influence of drying conditions on the optical and structural properties of sol–gel-derived ZnO nanocrystalline films

Zinc oxide nanothin films were prepared on glass substrate by sol–gel dip-coating method using zinc acetate dihydrate, methanol, and monoethanolamine as precursor, solvent, and stabilizer, respectively. The relationship between drying conditions and the characteristics of ZnO nanocrystalline films (c-axis orientation, grain size, roughness and optical properties) was studied. The films were dried in an oven at different temperatures and by IR radiation. Then, the films were annealed at 500°C in a furnace. The chemical composition, transmission spectra, structure, and morphology of the samples were studied using infrared (IR) and UV–visible spectroscopy, X-ray diffraction (XRD), and atomic force microscopy (AFM), respectively. The XRD results show that the drying conditions affect the orientation of crystallization along the (0 0 2) plane. AFM images show that the thicknesses of the films decrease from 128 to 93 nm by changing the drying conditions. The photoluminescence (PL) of ZnO nanothin films shows the UV emission at near band edge and broad green radiation at about 465 nm wavelength.