电-声子耦合强度对量子点系统噪声的影响

利用Lang-Firsov正则变换和Keldysh非平衡格林函数方法研究了低温下具有电子-声子相互作用的量子点系统的噪声.我们特别注意了电-声子耦合强度的变化对量子点系统噪声的影响.数值结果表明:随着电-声子耦合强度的增大,系统的噪声增大,同时微分噪声谱中会出现一系列的声子伴带峰,峰的高度和数目对电-声子耦合强度的变化非常敏感.我们也研究了系统的Fano因子,它显示系统噪声对肖特基(Schottky)公式的偏离.在高偏压区,Fano因子随着电-声子耦合强度的增大而增大.     

非对称量子点中磁极化子的声子平均数

采用线性组合算符方法研究了非对称量子点中强、弱耦合磁极化子的声子平均数的性质。导出了非对称量子点中强、弱耦合磁极化子的声子平均数和振动频率随量子点的横向和纵向受限强度,电子-声子耦合强度的变化关系。对RbCl晶体进行数值计算,结果表明非对称量子点中强、弱耦合磁极化子的声子平均数和振动频率随量子点的横向和纵向受限强度和电子-声子耦合强度的增大而迅速增大。     

抛物量子点中弱耦合磁极化子的性质

应用线性组合算符和幺正变换方法研究了抛物量子点中磁极化子的基态性质。得出基态能和基态束缚能随有效束缚强度增大而减小,随回旋频率增大而增大。当有效柬缚强度给定,基态能量随电子-体纵光学声子耦合强度增加而减小。当有效束缚强度l0>0.3时,电子-体纵光学声子耦合强度的变化对量子点中弱耦合磁极化子的基态能量的影响变得显著。当有效束缚强度l0<0.3时,电子-体纵光学声子耦合强度的变化对基态能量影响很小。由于有效束缚强度与量子点受限强度的平方根成反比,所以量子点受限越强,基态能量、基态束缚能越大,电子一体纵光学声子耦合强度和磁场的变化对量子点的影响相对越小;当量子点受限变弱时,电子-声子耦合强度变化对量子点的影响变大,磁场对量子点的影响也变大,所以在量子点中,极化子对量子点的影响不容忽略。     

非对称量子点中极化子的声子平均数

采用线性组合算符和幺正变换方法研究非对称量子点中强、弱耦合极化子的声子平均数的性质,导出了量子点中强、弱耦合极化子的声子平均数和振动频率随量子点的横向和纵向受限强度、电子-声子耦合强度的变化关系。对RbCl晶体进行数值计算,结果表明非对称量子点中强耦合极化子的振动频率和声子平均数随量子点的横向和纵向的受限强度的增强而迅速增大,随电子-声子耦合强度的增强而增大。     

库仑场对非对称量子点中强耦合极化子声子平均数的影响

采用线性组合算符和幺正变换方法研究库仑场对非对称量子点中强耦合极化子振动频率和声子平均数的影响。导出量子点中强耦合束缚极化子振动频率和声子平均数随量子点的横向和纵向有效受限长度,库仑束缚势和电子-声子耦合强度的变化关系。数值计算结果表明:非对称量子点中强耦合束缚极化子的振动频率和声子平均数随量子点的横向和纵向有效受限长度的减小而迅速增大。随库仑束缚势和电子-声子耦合强度的增加而增大。     

非对称量子点中电子的激发能量和跃迁谱线频率

研究了非对称量子点中与声子强耦合的电子的性质.采用线性组合算符和幺正变换方法研究非对称量子点中与声子强耦合的电子的第一内部激发态能量、激发能量和第一内部激发态到基态的跃迁谱线频率随量子点的横向和纵向有效受限长度,电子-声子耦合强度的变化关系。数值计算结果表明：非对称量子点中与声子强耦合的电子的第一内部激发态能量、激发能量和第一内部激发态到基态的跃迁谱线频率随量子点的横向和纵向有效受限长度的减小而迅速增大,表现出奇特的量子尺寸效应。非对称量子点中与声子强耦合的电子的第一内部激发态能量随电子-声子耦合强度的增加而减小。非对称量子点中与声子强耦合的电子的激发能量和第一内部激发态到基态的跃迁谱线频率随电子-声子耦合强度的增加而增大。     

抛物形量子点中弱耦合极化子的性质

采用线性组合算符和幺正变换方法研究了抛物形量子点中弱耦合极化子的基态能量和束缚能。计算结果表明,基态能量和束缚能随有效束缚强度增加而减小。随着有效束缚强度逐渐加大,最后逐渐趋于体结构极化子的基态能量。当有效束缚强度给定,基态能随电子-体纵光学声子耦合强度增加而减小。由于有效束缚强度与量子点受限强度平方根成反比,所以量子点受限越强,基态能和束缚能越大,电子-体纵光学声子耦合强度的变化对量子点的影响越小。当量子点受限变弱时,电子-体纵光学声子耦合强度变化对量子点的影响变大。所以在量子点弱受限区域,极化子对量子点的影响不容忽略。     

磁场对非对称量子点中弱耦合极化子的相互作用能的影响

采用改进的线性组合算符和幺正变换相结合的方法,研究磁场、量子点的横向和纵向有效受限长度和电子-声子耦合强度对非对称量子点中弱耦合磁极化子的振动频率和相互作用能的影响.导出了振动频率和相互作用能随量子点的横向和纵向有效受限长度、电子-声子耦合强度和磁场的回旋共振频率的变化关系.数值计算结果表明:振动频率和相互作用能随量子点的横向和纵向有效受限长度的减小而迅速增大,随磁场的回旋共振频率的增加而增大,相互作用能随电子-声子耦合强度的减小而呈线性的增大.     

磁场对非对称量子点中极化子性质的影响

采用线性组合算符和幺正变换方法研究磁场对非对称量子点中弱耦合磁极化子性质的影响.导出了非对称量子点中弱耦合磁极化子的振动频率、基态能量和基态结合能随量子点的横向和纵向有效受限长度、磁场和电子-声子耦合强度的变化关系.数值计算结果表明:非对称量子点中弱耦合磁极化子的基态能量和基态结合能随量子点的横向和纵向有效受限长度的增加而迅速增大.随回旋频率的增加而增大,随电子-声子耦合强度的增加而减小.     

库仑场对量子点中强耦合束缚极化子激发态性质的影响

采用线性组合算符和幺正变换方法研究量子点中强耦合束缚极化子的振动频率、第一内部激发态能量、激发能量和共振频率的性质。讨论了这些量随量子点的有效受限长度、电子-声子耦合强度和库仑束缚势的变化关系。通过数值计算结果表明:量子点中强耦合束缚极化子的振动频率、第一内部激发态能量、激发能量和共振频率随量子点的有效受限长度的减小而迅速增大,随库仑束缚势和电子-声子的耦合强度的增加而增大。     

AC shot noise through a vibrating quantum dot

In this paper we investigate the joint effects of the electron-phonon interaction and an external alternating (ac) gate voltage on the spectral density of shot noise through a vibrating quantum dot system, by applying the Lang-Firsov canonical transformation and the Keldysh nonequilibrium Green's function (NGF) technique. We find that the effects of the electron-phonon and electron-photon interaction on the differential shot noise are different. The main resonant peak of the differential shot noise is decreased only when a time-dependent gate voltage is imposed on quantum dot. With the ac field amplitude increasing, the main resonant peak of the differential shot noise decreases. The Fano factor of the system, which exhibits the deviation of shot noise from the Schottky formula, is also studied. Super-Poissonian shot noise appears due to the photon absorption (emission) processes in the low bias voltage region.     

Effect of electron-phonon scattering on shot noise in nanoscale junctions

We investigate the effect of electron-phonon inelastic scattering on shot noise in nanoscale junctions in the regime of quasiballistic transport. We predict that when the local thermal energy of the junction is larger than its lowest vibrational mode energy eV(c), the inelastic contribution to shot noise (conductance) increases (decreases) with bias as V (sqrt[V]). The corresponding Fano factor thus increases as sqrt[V]. We also show that the inelastic contribution to the Fano factor saturates with increasing thermal current exchanged between the junction and the bulk electrodes to a value which, for V > V(c), is independent of bias. These predictions can be readily tested experimentally.     

Shot noise of the spin inelastic tunneling through a quantum dot with single molecule-magnet

We have studied the quantum fluctuations of inelastic spin-electron scattering in quantum dot with an embedded biaxial single molecule-magnet and particularly investigated the zero-frequency shot noise and Fano factor in different magnetic fields. It is found that the shot noise and Fano factor exhibit a stepwise behaviour as bias increases in the presence of interaction between the electron and molecule-magnet for a weak magnetic field. As magnetic field becomes strong, a dip is displayed in the shot-noise-bias curve due to the suppression of inelastic shot noise caused by the quantum tunneling of magnetisation. Because of the spontaneous inelastic tunneling at zero bias, a small shot noise occurs, which results in the case of Fano factor F >> 1. Moreover, our results show that the sweeping speed can also influence the shot noise and Fano factor obviously.     

Shot noise in a quantum dot coupled to carbon nanotube terminals applied with a microwave field

We have investigated the spectral density of shot noise for the system of a quantum dot (QD) coupled to two single-wall carbon nanotube terminals irradiated with a microwave field on the QD. The terminal features are involved in the shot noise through modifying the self-energy of QD. The contributions of carbon nanotube terminals to the shot noise exhibit obvious behaviors. The novel side peaks are associated with the photon absorption and emission procedure accompanying the suppression of shot noise. The shot noise in balanced absorption belongs to sub-Poissonian, and it is symmetric with respect to the gate voltage. The differential shot noise displays intimate relation with the nature of carbon nanotubes and the applied microwave field. It exhibits asymmetric behavior for the unbalanced absorption case versus gate voltage. The Fano factor of the system exhibits the deviation of shot noise from the Schottky formula, and the structures of terminals obviously contribute to it. The super-Poissonian and sub-Poissonian shot noise can be achieved in the unbalanced absorption in different regime of source-drain bias.     

Rashba spin-orbit interaction and shot noise for spin-polarized and entangled electrons

We study shot noise for spin-polarized currents and entangled electron pairs in a four-probe (beam-splitter) geometry with a local Rashba spin-orbit (s-o) interaction in the incoming leads. Within the scattering formalism we find that shot noise exhibits Rashba-induced oscillations with continuous bunching and antibunching. We show that entangled states and triplet states can be identified via their Rashba phase in noise measurements. For two-channel leads, we find an additional spin rotation due to s-o induced interband coupling which enhances spin control. We show that the s-o interaction deter-mines the Fano factor, which provides a direct way to measure the Rashba coupling constant via noise.     

Spin-flip shot noise in a quantum dot coupled to carbon nanotube terminals responded by a rotating magnetic field

We have investigated the spectral density of shot noise of the system with a quantum dot (QD) coupled to two single-wall carbon nanotube terminals, where a rotating magnetic field is applied to the QD. The carbon nanotube (CN) terminals act as quantum wires which open quantum channels for electrons to transport through. The shot noise and differential shot noise exhibit novel behaviors originated from the quantum nature of CNs. The shot noise is sensitively dependent on the rotating magnetic field, and the differential shot noise exhibits asymmetric behavior versus source-drain bias and gate voltage. The Fano factor of the system exhibits the deviation of shot noise from the Schottky formula. The super-Poissonian and sub-Poissonian shot noise can be achieved in different regime of source-drain bias.     

AC shot noise through a quantum dot in the Kondo regime

The photon-assisted shot noise through a quantum dot in the Kondo regime is investigated by applying time-dependent canonical transformation and non-crossing approximation technique. A basic formula for the photon-assisted shot noise is obtained. The rich dependence of the shot noise on the external ac field and temperature is displayed. At low temperature and low frequencies, the differential shot noise exhibits staircase behavior. When the temperature increases, the steps are rounded. At elevated frequencies, the photon-assisted tunneling becomes more obvious. We have also found that the Fano factor is enhanced as the ac frequency is enhanced.     

Coupling strength effect on shot noise in boron devices

The shot noise properties in boron devices are investigated with a tight-binding model and the non-equilibrium Green’s function.It is found that the shot noise and Fano factors can be tuned by changing the structures,the size,and the coupling strength.The shot noise is suppressed momentarily as we switch on the bias voltage,and the electron correlation is significant.The Fano factors are more sensitive to the ribbon width than to the ribbon length in the full coupling context.In the weak-coupling context,the Fano factors are almost invariant with the increase of length and width over a wide bias range.     

Charge Transport Properties of the Majorana Zero Mode Induced Noncollinear Spin Selective Andreev Reflection

We study the charge transport properties of the spin-selective Andreev reflection(SSAR)effect between a spin polarized scanning tunneling microscope(STM)tip and a Majorana zero mode(MZM).Considering both the MZM and the excited states,we calculate the conductance and the shot noise power of the noncollinear SSAR using scattering theory.We find that the excited states give rise to inside peaks.Moreover,we numerically calculate the shot noise power and the Fano factor of the SSAR effect.Our calculation shows that the shot noise power and the Fano factor are related to the angle between the spin polarization direction of the STM tip and that of the MZM,which provide additional characteristics to detect the MZM via SSAR.