Charge transport across bulk heterojunction organic thin film

The transport of charges in organic photo-active film has been the focus of tremendous research in the past few decades with the view to understand the physics of the polymers. Bulk heterojunction type devices are particularly more interesting because of their high power conversion efficiency. We have fabricated organic PV cell based on sandwich type ITO/PEDOT:PSS/APFO green-6:PCBM/LiF/Al device structure. The space charge limited currents were investigated to be able to derive important transport parameters of the devices. The measured current agrees very well with trap free space charge limited transport theory. The zero field mobility and field activation factor found from the data were μ ₀=(3.39±0.2)×10⁻⁶ m²/V sec and γ=(8.3±0.3)×10⁻⁴ (m/V)^1/2, respectively.     

Field desorption of a potassium-gold film on tungsten

The formation and destruction of alloys and chemical compounds of gold with potassium occurring in their coadsorption on tungsten have been studied by continuous-mode field-desorption microscopy, field-emission microscopy, and time-of-flight mass analysis of the products of field-induced desorption. The effect of an electric field on these processes was investigated. Monatomic and cluster ions of potassium and its compounds with gold were found to appear in fields too weak for field desorption to set in. Chemical reactions give rise to autooscillations in the field desorption of potassium.     

Effect of hydrogen content on dielectric strength of the silicon nitride film deposited by ICP-CVD

The inductively coupled plasma chemical vapor deposition(ICP-CVD) deposited silicon nitride(SiN_x) thin film was evaluated for its application as the electrical insulating film for a capacitor device.In order to achieve highest possible dielectric strength of SiN_x,the process parameters of ICP-CVD were carefully tuned to control hydrogen in SiNx films by means of tuning N_2/SiH_4 ratio and radio frequency(RF) power.Besides electrical measurements,the hydrogen content in the films was measured by dynamic secondary ion mass spectrometry(D-SIMS).Fourier transform infrared spectroscopy(FTIR) and micro Raman spectroscopy were used to characterize the SiN_x films by measuring Si-H and N-H bonds' intensities.It was found that the more Si-H bonds lead to the higher dielectric strength.     

In situ atomic force microscopy observation of hydrogen absorption/desorption by Palladium thin film

Grain structure changes in Pd thin film during hydrogen absorption and desorption were observed by in situ atomic force microscopy. The as-sputtered film had a smooth flat surface with 20-30 nm grains. Film that absorbed hydrogen showed buckling, caused by the compressive stress due to lattice expansion as Pd metal reacted with hydrogen to form the hydride. Grains on the buckles were agglomerated and deformed unlike those on flat areas beside the buckles. Film that absorbed and then desorbed hydrogen still showed some buckling; however, many buckles shrank and flattened when the compressive stress of lattice expansion was released during desorption. On both the remaining and the shrunken buckles, grain agglomeration was retained; whereas, the deformed grains reverted back to their original form. X-ray diffraction indicated compressive residual stress in the as-sputtered film and tensile residual stress in the film after hydrogen absorption/desorption. These results indicate that irreversible grain agglomeration is related to residual tensile stress in the film although agglomeration occurs only on the buckled areas.     

Confinement-enhanced electron transport across a metal-semiconductor interface

We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(111) interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportional increase of the electron injection rate into the semiconductor with the frequency of electron oscillations in the Pb quantum well.     

Vacancy trapping mechanism for multiple hydrogen and helium in beryllium: a first-principles study

The microscopic mechanism for H and He trapping by vacancy defects and bubble formation in a Be host lattice is investigated using first-principles calculations. A single He atom prefers to occupy a vacancy centre while H does not. He can segregate towards the vacancy from the interstitial site much more easily than H. Both H and He exhibit lower diffusion barriers from a remote interstitial to a vacancy with regard to their diffusion barriers inside a perfect Be solid. Up to five H or 12 He atoms can be accommodated into the monovacancy space, and the Be-He interaction is much weaker than Be-H. The physical origin for aggregation of multiple H or He atoms in a vacancy is further discussed. The strong tendency of H and He trapping at vacancies provides an explanation for why H and He bubbles were experimentally observed at vacancy defects in materials. We therefore argue that vacancies provide a primary nucleation site for bubbles of H and He gases inside Be materials.     

Electron-stimulated desorption of cesium atoms from cesium layers deposited on a germanium-coated tungsten surface

The yield and energy distribution of Cs atoms from cesium layers adsorbed on germanium-coated tungsten were measured, using the time-of-flight technique with a surface-ionization-based detector, as a function of the energy of bombarding electrons, germanium film thickness, the amount of adsorbed cesium, and substrate temperature. The threshold for the appearance of Cs atoms is ～30 eV, which correlates well with the germanium 3d-level ionization energy. As the electron energy increases, the Cs atom yield passes through a broad maximum at ～120 eV. For germanium film thicknesses from 0.5 to 2 monolayers, resonance Cs yield peaks were observed at electron energies of 50 and 80 eV, which can be related to the tungsten 5p and 5s core-level ionization energies. As the cesium coverage increases, the Cs atom yield passes through a flat maximum at monolayer coverage. The energy distribution of Cs atoms follows a bell-shaped curve. With increasing cesium coverage, this curve shifts to higher energies for thin germanium films and to lower energies for thick films. The Cs energy distribution measured at a substrate temperature T = 160 K exhibits two bell-shaped peaks, namely, a narrow peak with a maximum at ～0.35 eV, associated with tungsten core-level excitation, and a broad peak with a maximum at ～0.5 eV, deriving from the excitation of the germanium 3d core level. The results obtained can be described within a model of Auger-stimulated desorption.     

Statistical-thermodynamic theory of ordering in a binary film deposited on the surface of a monocrystal

The ordering of a binary monolayer deposited on the surface of a monocrystal is studied. In the case when the structure of the film is equivalent to that of the crystal surface, the ordering in the film is qualitatively similar to that in the bulk of the sample: When the ordering energy is positive there exists an order-disorder phase transition at a certain temperature and for a certain concentration interval. If the structure of the film is different from the structure of the surface, then the film is ordered at all temperatures, independently of the sign of the ordering energy. In this case, in addition to the equilibrium ordered state in the region T < T_* (T_* is a certain temperature which is determined by the composition of the alloy and by the magnitude of the energy shift of the atoms of the film in the field of the substrate), there exists a metastable ordered state in which there is a jump-like change in the ordering at the point T_*, analogous to a first-order phase transition. Possible methods of experimental study of the ordering in films are discussed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 53–57, May, 1987.     

电子束蒸发沉积六硼化镧薄膜的逸出功

六硼化镧(LaB6)具有电子逸出功低、高熔点和高化学稳定性等优点,是制作热阴极和场发射阴极的理想发射体材料。而且在常规场发射尖锥表面涂敷一层LaB6)薄膜能够大幅度提高场发射尖锥的发射能力。为了测量LaB6) 薄膜的逸出功,采用电子束蒸发技术沉积LaB6)薄膜,并对薄膜进行了X射线衍射分析和X射线光电谱分析。通过测量薄膜的热电子发射特性和敷LaB6)薄膜的硅尖锥阵列的场致电子发射特性确定了LaB6薄膜的逸出功,与块状LaB6)多晶材料的逸出功大体相同,说明电子束蒸发沉积技术适合于制备高纯度、低逸出功的LaB6薄膜。     

电子束蒸发沉积六硼化镧薄膜的逸出功(英文)

六硼化镧(LaB6)具有电子逸出功低、高熔点和高化学稳定性等优点,是制作热阴极和场发射阴极的理想发射体材料。而且在常规场发射尖锥表面涂敷一层LaB6薄膜能够大幅度提高场发射尖锥的发射能力。为了测量LaB6薄膜的逸出功,采用电子束蒸发技术沉积LaB6薄膜,并对薄膜进行了X射线衍射分析和X射线光电谱分析。通过测量薄膜的热电子发射特性和敷LaB6薄膜的硅尖锥阵列的场致电子发射特性确定了LaB6薄膜的逸出功,与块状LaB6多晶材料的逸出功大体相同,说明电子束蒸发沉积技术适合于制备高纯度、低逸出功的LaB6薄膜。     

Diffusion and desorption of submonolayer platinum deposited on the multi-faceted surface of a tungsten micro-crystal

Diffusion and desorption of platinum on the tungsten micro-crystal in the form of the W(1 1 1) oriented emitter tip has been studied using the field electron microscopy (FEM) technique. Diffusion of small dose of platinum (average thickness about 0.18 geometrical ML after spreading) on the thermally clean W emitter tip was studied at temperatures 648-742 K. Average activation energy for diffusion E_diff was found to lie between 1.16 ± 0.08 eVand 1.30 ± 0.16 eV. During annealing at the diffusion temperatures Pt-induced faceting of the emitter surface was visible in the neighbourhood of the {1 1 1} pole. The layer equilibrated in the diffusion process was stable at temperatures up to 1100 K where reduction of the high voltage at a fixed emission current, characteristic of alloying of Pt with W, was detected. Submonolayer of platinum (Θ_Pt = 0.18 ML) started to desorb at tip temperature ≥1780 K. The measurements of average activation energy for desorption of ‘zero coverage’ Pt (0.03 ML ≤ Θ_Pt ≤ 0.06 ML) from the entire W emitter surface were carried out at temperatures 1990-2170 K and yield the value of E_des = 5.19 ± 0.22 eV to 5.33 ± 0.19 eV. The results are compared with data for diffusion of individual Pt atoms and small clusters and with data for adsorption of Pt atoms on a planar W(1 1 0) surface. In discussion the atomic surface structure of the substrate, modified by the strong interaction of Pt with the W micro-crystal, is also taken into account.     

Increased spatial homogeneity in a light-emitting InGaN thin film using optical near-field desorption

We report a self-assembly method that produces greater spatial uniformity in InGaN thin films using optical near-field desorption. Spatial homogeneity in the In fraction was reduced by introducing additional light during the photo-enhanced chemical vapor deposition of InGaN. Near-field desorption of InGaN nanoparticles, upon addition depended on the In content of the film, and the photon energy of the illumination source determined the energy of the emitted photons. Since this deposition method is based on a photo-desorption reaction, it can easily be applied to other deposition techniques and used with other semiconductor systems.     

The role of hydrogen in hydrogenated microcrystalline silicon film and in deposition process with VHF-PECVD technique

The role of hydrogen in hydrogenated microcrystalline silicon ($\mu $c-Si:H) thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) technique have been investigated in this paper. With \textit{in situ} optical emission spectroscopy (OES) diagnosis during the fabrication of $\mu $c-Si:H thin films under different plasma excitation frequency $\nu _{\rm e }$ (60MHz--90MHz), the characteristic peak intensities ($I_{{\rm SiH}^*}$, $I_{{\rm H}\alpha^*}$ and $I_{{\rm H}\beta ^*}$) in SiHVHF-PECVD技术 氢化微晶硅 光发射光谱 薄膜学VHF-PECVD technique, hydrogenated microcrystalline silicon, role of hydrogen, optical emission spectroscopyProject supported by the Natural Science Foundation of Guangdong Province, China (Grant No 05300378), the State Key Development Program for Basic Research of China (Grant Nos G2000028202 and G2000028203) and the Program on Natural Science of Jinan University, Guangzhou, China (Grant No 51204056).2005-11-252005-11-252006-01-05The role of hydrogen in hydrogenated microcrystalline silicon （μc-Si：H） thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition （VHF-PECVD） technique have been investigated in this paper. With in situ optical emission spectroscopy （OES） diagnosis during the fabrication of μc-Si：H thin films under different plasma excitation frequency Ve （60MHz-90MHz）, the characteristic peak intensities （IsiH＊, IHα＊ and IHβ＊ ） in SiH4＋H2 plasma and the ratio of （IHα＊ ＋ IHβ＊ ） to IsiH＊ were measured; all the characteristic peak intensities and the ratio （IHα＊ ＋ IHβ＊ ）/IsiH＊ are increased with plasma excitation frequency. It is identified that high plasma excitation frequency is favourable to promote the decomposition of SiH4＋H2 to produce atomic hydrogen and SiHx radicals. The influences of atomic hydrogen on structural properties and that of SiHx radicals on deposition rate of μc-Si：H thin films have been studied through Raman spectra and thickness measurements, respectively. It can be concluded that both the crystalline volume fraction and deposition rate are enhanced with the increase of plasma excitation frequency, which is in good accord with the OES results. By means of FTIR measurements, hydrogen contents of μc-Si：H thin films deposited at different plasma excitation frequency have been evaluated from the integrated intensity of wagging mode near 640 cm^-1. The hydrogen contents vary from 4% to 5%, which are much lower than those of μc-Si：H films deposited with RF-PECVD technique. This implies that μc-Si：H thin films deposited with VHF-PECVD technique usually have good stability under light-soaking.     

Analytical study of non-linear transport across a semiconductor-metal junction

In this paper we study analytically a one-dimensional model for a semiconductor-metal junction. We study the formation of Tamm states and how they evolve when the semi-infinite semiconductor and metal are coupled together. The non-linear current, as a function of the bias voltage, is studied using the non-equilibrium Green’s function method and the density matrix of the interface is given. The electronic occupation of the sites defining the interface has strong non-linearities as a function of the bias voltage due to strong resonances present in the Green’s functions of the junction sites. The surface Green’s function is computed analytically by solving a quadratic matrix equation, which does not require adding a small imaginary constant to the energy. The wave function for the surface states is given.     

Selective photon-stimulated desorption of hydrogen from GaAs surfaces

Photon-stimulated desorption of H(+) from hydrogenated GaAs (110) and (100) surfaces was studied as a function of photon energy. Distinct peaks, observed around As 3d core-level binding energy for desorption from the GaAs (100) surface and in the As 3d and Ga 3p region for desorption from the GaAs (110) surface, show a striking similarity with the fine structure (spin-orbit splitting) measured in the photoemission from As 3d and Ga 3p levels. These results provide clear evidence for direct desorption processes and represent a basis for selective modification of hydrogenated GaAs surfaces.     

The role of Ti adhesion layer in electric charge transport in pentacene organic thin film transistors

We have performed measurements of electric current in pentacene organic thin film transistors in situ, during growth of pentacene layer. The source and the drain contacts were fabricated with varying thickness of Ti layer, followed by a thick Au layer. Our measurements confirm the hypothesis that only the first two molecular layers of pentacene are responsible for the transport of most of the electric current between the source and the drain. Consequently, several-nm thick Ti layer hinders charge carrier injection from source into the channel. This is manifested as a delayed onset of electric current when the thickness of Ti layer exceeds the thickness of two pentacene molecular layers.