Effective atomic numbers for CoCuNi alloys using transmission experiments

Effective atomic numbers for CuCoNi alloys against changing Ni contents were measured in the X-ray energy range from 15.746 to 40.930 keV. The gamma rays emitted a ²⁴¹Am point source have been send on absorbers to be used transmission arrangement. The X-rays were counted by a Si(Li) detector with a resolution of 160 eV at 5.9 keV. The compositions of the Ni films were determined to be 0.03, 0.47, 0.62, 1.23, 1.22 and 1.6 by a scanning electron microscopy in CuCoNi alloys prepared against changing Ni contents. CoCuNi alloy films were prepared with an electrodeposition technique. Also, the total effective atomic numbers of each alloy were estimated using mixture rule. The measured values were compared with estimated values for alloys.     

Simulated mixed absorbers and effective atomic numbers for γ attenuation

The total γ-ray interaction cross-sections on mixed absorbers were determined at 662 keV with a view to study the effective atomic numbers for γ-ray absorption under narrow beam good geometry set-up. The measurements were taken for the combination of metallic absorbers like aluminium, copper, lead and mercury and also for the simulated absorbers by rotating the targets. ORTEC HPGe and NaI(Tl) detectors were used for detection of γ-rays. The experimental results compare favourably with theoretical values derived from XCOM package and suggest the usefulness of the concept of effective atomic numbers and the utility of the rotating absorbers technique.     

Effective atomic numbers and electron densities of CuGaSe2 semiconductor in the energy range 6–511 keV

The effective atomic numbers and electron densities of the CuGaSe₂ semiconductor were calculated at 29 different energies from 6.9 to 511.0 keV by using the measured mass attenuation coefficients. Also, the mass attenuation coefficients for Cu, Ga, and Se elements were obtained at this energy range. The samples were irradiated using Cd-109, Co-57, Ba-133, and Na-22 radioactive sources. The x-ray energies were obtained using secondary targets. The gamma and x-rays were counted by an Ultra-LEGe detector with a resolution of 0.55 at 122.0 keV. The mass attenuation coefficients were compared with theoretical ones obtained using the XCOM program. Copyright © 2008 John Wiley & Sons, Ltd.     

Ab initio study of atomic geometry and electronic states of GaSb(0 0 1) reconstructions

We have employed the pseudopotential method and the density functional scheme to study the atomic geometry and electronic states of the GaSb(0 0 1) surface such as (1 × 3), c(2 × 6) and (4 × 3) reconstructions. It is found that both of (1 × 3) and c(2 × 6) reconstructions are characterised by metallic band structures, and thus violate the so-called electron counting rule, one of the main building principles of the stability of compound semiconductor surfaces. We establish that the stability of these reconstructions results from significant elastic deformation in the top atomic layers of the surface, a process which overcomes the penality incurred by the violation of the electron counting rule. The atomic geometry and electronic states for the two reconstructions are compared and contrasted with each other. The α and β phases of the (4 × 3) reconstruction also show large atomic relaxations but are semiconducting and obey the electron counting rule.     

Scattering effects and damping of electrons in Pt(1 1 1) and Cu(1 1 1)

In this work an analysis of experimental and theoretical data associated with the scattering and attenuation of electrons in the Pt(1 1 1) and Cu(1 1 1) crystalline samples is presented. The information about the crystalline structure of the first few atomic layers was obtained by the directional elastic peak electron spectroscopy (DEPES) at the primary electron beam energies E_p from 1.5 keV to 2.0 keV. The comparison of the experimental and theoretical DEPES distributions indicates a qualitative agreement between experiment and theory. The relative signal values associated with the intensity maxima were found to be different. The latter effect suggest that the electron attenuation in the crystalline samples can have an anisotropic character. A qualitative analysis of the characteristic pattern around the [1 1 1] direction concerning the calculation of the scattering factors was performed. The collective scattering of electrons by atoms located around the threefold symmetry axis resulting in the so called ring focusing effect is discussed.     

Crystalline structure of the Au(1 1 1) surface revealed by stereographic intensity DEPES maps

The intensity of elastically backscattered electrons at the primary electron beam energy 1.9 keV was used to obtain a stereographic map of Au(1 1 1) by means of the directional elastic peak electron spectroscopy (DEPES). An experimental result is compared with the theoretical data obtained by using multiple scattering calculations (MS) performed for both not-reconstructed and model-reconstructed clusters. The lateral lattice misfit of the first layer leads to quantitative changes of theoretical intensities showing a sensitivity of DEPES to the short atomic chain axial order. This comparison proves that a main contribution of the experimental contrast originates from a higher background level. Moreover an anisotropy of the inelastic mean free path is discussed in the paper.     

Synthesis of molybdenum silicide by both ion implantation and ion beam assisted deposition

Two groups of Mo/Si films were deposited on surface of Si(1 0 0) crystal. The first group of the samples was prepared by both ion beam assisted deposition (IBAD) and metal vapor vacuum arc (MEVVA) ion implantation technologies under temperatures from 200 to 400 °C. The deposited species of IBAD were Mo and Si, and different sputtering Ar ion densities were selected. The mixed Mo/Si films were implanted by Mo ion with energy of 94 keV, and fluence of Mo ion was 5 × 10¹⁶ ions/cm². The second group of the samples was prepared only by IBAD under the same test temperature range. The Mo/Si samples were analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), sheet resistance, nanohardness, and modulus of the Mo/Si films were also measured. For the Mo/Si films implanted with Mo ion, XRD results indicate that phase of the Mo/Si films prepared at 400 and 300 °C was pure MoSi₂. Sheet resistance of the Mo/Si films implanted with Mo ion was less than that of the Mo/Si films prepared without ion implantation. Nanohardness and modulus of the Mo/Si films were obviously affected by test parameters.     

Surface modification study of low energy electron beam irradiated polycarbonate film

The effect of low energy electron beam irradiation on polycarbonate (PC) film has been studied here. The PC film of thickness 20 μm was exposed by 10 keV electron beam with 100 nA/cm² current density. The irradiated film was characterized by mean of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and residual gas analyzer (RGA). Formation of unsaturated bonds and partial graphitization of the surface layer are measured by XPS. Results of the AFM imaging shows electron implantation induce changes in surface morphology of the polymer film. The residual gas analyzer (RGA) spectrum of PC is recorded in situ during irradiation. The results show the change in cross-linking density of the polymer at the top surface.     

X-ray attenuation coefficients of Fe compounds in the K-edge region at different energies and the validity of the mixture rule

The total mass attenuation coefficients for element Fe and compounds FeF₃, Fe₂O₃, FeCl₂·4H₂O, FeCl₃2NH₄Cl·H₂O were measured at different energies between 4.508-17.443 keV range by using secondary excitation method. Ti, V, Cr, Ni, Cu, Zn, As, Se, Br, Rb, Sr, Y, Zr, Nb, Mo were chosen as secondary exciter. 59.5 keV gamma rays emitted from an ²⁴¹Am annular source were used to excite secondary exciter and K_α(K-L₃, L₂) lines emitted of secondary exciter were counted by a Si(Li) detector with a resolution of 160 eV at 5.9 keV. It was observed that mixture rule method is not a suitable method for determination of the mass attenuation coefficients of compounds, especially at energy that is near the absorption edge. Obtained values were compared with theoretical values.     

Molar extinction coefficients of solutions of some organic compounds

Molar extinction coefficients of aqueous solutions of some organic compounds, viz. formamide (CH₃NO),N-methylformamide (C₂H₅NO),NN-dimethylformamide (C₃H₇NO),NN-dimethylacetamide (C₄H₉NO), 1,4-dioxane (C₄H₈O₂₄), succinimide (C₄H₅NO₂) and solutions of acetamide (C₂H₅NO) and benzoic acid (C₇H₆O₂) in 1,4-dioxane (C₄H₈O₂) have been determined by narrow beam γ-ray transmission method at 81, 356, 511, 662, 1173 and 1332 keV. The experimental values of mass attenuation coefficients of these compounds have been used to calculate effective atomic numbers and electron densities. The additivity rule earlier used for aqueous solution has been extended to non-aqueous (1,4-dioxane) solutions.     

Observation of ferromagnetism at room temperature for Cr ions implanted ZnO thin films

Single crystalline ZnO films were grown on c-plane GaN/sapphire (0 0 0 1) substrates by molecular beam epitaxy. Cr⁺ ions were implanted into the ZnO films with three different doses, i.e., 1 × 10¹⁴, 5 × 10¹⁵, and 3 × 10¹⁶ cm⁻². The implantation energy was 150 keV. Thermal treatment was carried out at 800 °C for 30 s in a rapid thermal annealing oven in flowing nitrogen. X-ray diffraction (XRD), atomic force microscopy, Raman measurements, transmission electron microscopy and superconducting quantum interference device were used to characterize the ZnO films. The results showed that thermal annealing relaxed the stress in the Cr⁺ ions implanted samples and the implantation-induced damage was partly recovered by means of the proper annealing treatment. Transmission electron microscopy measurements indicated that the first five monolayers of ZnO rotated an angle off the [0 0 0 1]-axis of the GaN in the interfacial layer. The magnetic-field dependence of magnetization of annealed ZnO:Cr showed ferromagnetic behavior at room temperature.     

Ion-induced secondary electron emission from ZnS thin films deposited by closed-spaced sublimation

ZnS thin films were deposited on soda lime glass and aluminum substrates by close-spaced sublimation technique. The change in composition, structural and optical properties of the films was investigated as a function of the substrate temperature. The deposited films were stoichiometric and crystalline in nature having cubic structure oriented only along (1 1 1) plane. The energy band gap of the films deposited at the substrate temperature of 150, 250 and 350 °C was 3.52, 3.58 and 3.63 eV respectively. These films were then bombarded with 2-10 keV energy pulsed Ar⁺ beam and their electron yield was determined from impinging ion and emitted electron currents. The electron yield of ZnS films was much high as compared to the metals. The electron yield of ZnS films increased with energy of the incident ion and got saturated at about 8 keV. The most important result of this study was that the electron yield of ZnS films having same composition was different. Monte Carlo simulations performed to interpret these experimental findings showed that the dissimilar electron yields of ZnS films is due to the combined effect of energy band gap, surface barrier potential and density of the films.     

Experimental calculations of number,energy and dose albedos for various materials using 662 keV gamma rays

ABSTRACT

Number, energy and dose albedos are measured at a scattering angle of 180° for a broad beam of 662 keV gamma rays obtained from a radioactive source of ¹³⁷Cs (having strength in µCi; 1 Ci?=?3.7?×?10¹⁰ disintegrations per second). The gamma beam is incident on semi-infinite thick targets of variable atomic numbers. The scattering media is divided into three sets, which are pure elements, alloys and composite materials. Experiments are carried out using a 3^″?×?3^″ NaI(Tl) scintillation detector. To obtain precision in data, the response unfolding of a scintillation detector is used, which converts the observed pulse-height distribution to a true photon spectrum over the energy range of 2.5 to 640 keV. The detector response unfolding results in the true intensity of back-scattered gamma flux by shifting the events resulting from partial absorption of photons to the full energy peak of the spectrum. In the present study, albedo factors are studied as a function of target thickness and their atomic number. The experimentally calculated numbers of back-scattered gamma photon are in good agreement with theoretically generated numbers of multiple back-scattered counts by using a Monte Carlo simulation code. The experimental data on energy and intensity of 662 keV gamma photons are used to evaluate the number, energy and dose albedos for different materials under investigation.     

Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing

Techniques of film deposition by co-evaporation, ion-beam assisted mixing, oxygen ion implantation, and thermal annealing were been combined in a novel way to study processing of erbium-in-silicon thin-film materials for optoelectronics applications. Structures with erbium concentrations above atomic solubility in silicon and below that of silicide compounds were prepared by vacuum co-evaporation from two elemental sources to deposit 200-270 nm films on crystalline silicon substrates. Ar⁺ ions were implanted at 300 keV. Oxygen was incorporated by O⁺-ion implantation at 130 keV. Samples were annealed at 600 °C in vacuum. Concentration profiles of the constituent elements were obtained by Rutherford backscattering spectrometry. Results show that diffusion induced by ion-beam mixing and activated by thermal annealing depends on the deposited Si-Er profile and reaction with implanted oxygen. Room temperature photoluminescence spectra show Er³⁺ transitions in a 1480-1550 nm band and integrated intensities that increase with the oxygen-to-erbium ratio.     

Hard X-ray photoelectron spectroscopy from 5-14.5 keV

Photoemission spectroscopy at high energies can be used to probe bulk electronic states. We used a specially designed high-voltage retarding lens and a commercial Perkin-Elmer PHI 10-360 hemispherical electron analyzer to investigate the core and valence band region of Au, YBa₂Cu₃O_7−δ and highly oriented pyrolytic graphite samples with hard X-rays in the energy range 5-14.5 keV. The overall instrumental resolution obtained at 8 keV was 218 meV. The photo ionization cross-sections for Au 5d and 6s excitations were determined experimentally. In comparison with published calculations for atomic cross-sections neglecting corrections for angular anisotropy, the values we find are twice as large for the 5d and an order of magnitude larger for the 6s (conduction band) level. Our results demonstrate the feasibility of bulk sensitive valence band spectroscopy with high resolution at high brilliance X-ray sources such as the ESRF. The measured cross-sections provide important input for improving current theoretical models.     

Effects of 160 keV electron irradiation on the optical properties and microstructure of “Panda” type Polarization-Maintaining optical fibers

In this paper, effects of 160 keV electron irradiated “Panda” type Polarization-Maintaining optical fiber at 1310 nm are investigated by us. Attenuation coefficient induced in optical fiber by electron beams at 1310 nm increases with increase in electron fluence. Electron irradiation-induced damage mechanism are studied by means of CASINO simulation program, the X-ray photoelectron spectroscopy (XPS), electron spin resonance spectrometer (EPR) and Fourier transform infrared spectroscopy (FTIR). The results show that Si-OH impurity defect concentration is the main reason of increasing attenuation coefficient at 1310 nm.     

Substrate induced enhancement of atomic layer growth on Al(1 1 1): The effect of the mass anisotropy

The evolution of the thin-film morphology is studied by molecular dynamics simulations and we find a strong tendency of adatom island growth on the (1 1 1) surface of a thin Al overlayer placed on a heavy substrate (Pt(1 1 1)) when the system is subjected to low-energy Xe⁺ irradiation. The large adatom yield of 10²−10³ is found for 5-10 keV rare gas ion impacts. We also find that the mass effect due to the small atomic mass ratio (large mass anisotropy) in the bilayer has a direct effect on the atomic layer growth on the surface. A mass anisotropy induced scattering of the light overlayer atoms from the heavy substrate contributes to the enhancement of adatom production. It has been found that the volume increase (density decrease) of the amorphous intermixed phase keeps the adatoms on the surface. The competition between cratering and atomic layer growth can also be seen: three events out of 10 leads to cratering (erosion) morphology at 6 keV ion energy. The substrate induced enhancement of atomic layer growth might be a promising tool for making arrays of nanodots as nanotemplates for nanofabrication.     

Application of obliquely interfering TE10 modes for electron energy gain

Two fundamental TE₁₀ modes are considered to interfere at a small angle θ and then propagate along the z-axis in an evacuated rectangular waveguide. The electron trajectory in the resultant field and the expressions for energy gain and the acceleration gradient are obtained, when the electron is injected along the z-axis. A 50 keV electron gains 718 keV energy in a 4.0 cm × 2.5 cm waveguide, when the microwave with intensity of 1 × 10¹⁰ W/cm² and frequency 5.577 GHz is used and the modes superpose at an angle of 10°; here the maximum acceleration gradient is obtained as 251 MeV/m. The energy gain and acceleration gradient are decreased with increasing width of the waveguide and microwave frequency. Higher gradient and larger energy gain are obtained for the higher microwave intensity, smaller angle of superposition and also when the electron is injected with larger initial energy.     

Combined X-ray-electron imaging techniques: Limitations on lateral resolution

Capabilities of the imaging techniques, in which X-rays are converted to electrons and then the emitted electrons are registered by means of an electron microscope, are analyzed, the focus being on the factors limiting lateral resolution at the stage of electron emission. Bearing in mind the tendency to use harder synchrotron X-rays for some combined X-ray-electron microscopy methods, calculations were made for two significantly different X-ray energies: E = 1.828 keV (K-edge of Si) and E = 11.923 keV (L₃-edge of Au). By using Monte Carlo simulations of the electron trajectories beneath the surface of the sample we show that the radius of the spot from which photoelectrons are emitted could be as small as 1 nm. However, when proper account is taken of an entire electron cascade associated with the re-building of electron shells after photoelectron emission, spots more than one order of magnitude larger result, limiting the best lateral resolution to 20–30 nm.     

Number albedo measurements from stratified layers of iron,concrete and aluminium

A layer of stratified combination composed of selected radiation shielding materials acquires better shielding property. Albedo is used in such measurements as an integral measure ofγ-ray scattering. The stratified slabs of alternating heterogeneous layers have been found to have a virtual homogeneous property with a definite effective atomic number. The angular distribution of back-scattered photons as well as the total number albedo values for iron, aluminium and concrete in stratified combination for 662 keV and 1250 keV photons are reported.