Structure and energetic of Bn (n = 2–12) clusters: Electronic structure calculations

The electronic and geometric structures, total and binding energies, first and second energy differences, harmonic frequencies, point symmetries, and highest occupied molecular orbital–lowest unoccupied molecular orbital (HOMO–LUMO) gaps of small and neutral B_n (n = 2–12) clusters have been investigated using density functional theory (DFT), B3LYP with 6‐311++G(d,p) basis set. Linear, planar, convex, quasi‐planar, three‐dimensional (3D) cage, and open‐cage structures have been found. None of the lowest energy structures and their isomers has an inner atom; i.e., all the atoms are positioned at the surface. Within this size range, the planar and quasi‐planar (convex) structures have the lowest energies. The first and the second energy differences are used to obtain the most stable sizes. A simple growth path is also discussed with the studied sizes and isomers. The results have been compared with previously available theoretical and experimental works. © 2006 Wiley Periodicals, Inc. Int J Quantum Chem, 2007     

Structural and static electric response properties of highly symmetric lithiated silicon cages: Theoretical predictions

It is shown by density functional theory calculations that high symmetry silicon cages can be designed by coating with Li atoms. The resulting highly symmetric lithiated silicon cages (up to D_5d symmetry) are low‐lying true minima of the energy hypersurface with binding energies of the order of 4.6 eV per Si atom and moderate highest occupied molecular orbital–lowest unoccupied molecular orbital gaps. Moreover, relying on a systematic study of the electric response properties obtained by ab initio (Hartree–Fock, MP2, and configuration interaction singles (CIS)) and density functional (B3LYP, B2PLYP, and CAM‐B3LYP) methods, it is shown that lithium coating has a large impact on the magnitude of their second hyperpolarizabilities resulting to highly hyperpolarizable species. Such hyperpolarizable character is directly connected to the increase in the density of the low‐lying excited states triggered by the interaction between the Si cage and the surrounding Li atoms. © 2012 Wiley Periodicals, Inc.     

二缺位γ-Keggin型多金属氧酸盐电子性质的密度泛函理论研究

采用密度泛函理论(DFT)方法研究了二缺位γ-Keggin型[γ-Xn+W10O36](12-n)-(X=AlⅢ,SiⅣ,PⅤ,SⅥ,GaⅢ,GeⅣ,AsⅤ,SeⅥ)阴离子的儿何结构和电子性质结果表明,在二缺位γ-Keggin型阴离子中,中心四面体氧原子Oa与中心杂原子及钨原子间的键长[d(X-Oa)及d(W-Oa)]...     

Electronic structure and stability of binary and ternary aluminum‐bismuth‐nitrogen nanoclusters

The electronic structure and stability in binary and ternary aluminum‐bismuth‐nitrogen nanoclusters up to six atoms are studied using density functional theory (DFT). The lowest energy geometries were obtained by sampling the geometrical space with a Monte Carlo method and geometry optimizations, at DFT level, with M06L functional. The clusters stability is analyzed using formation and fragmentation energies. Our results show that a high concentration of nitrogen presents a tendency to form nitrogen clusters. highest occupied molecular orbital‐lowest unoccupied molecular orbital gaps show the well‐known oscillation as the number of atoms is increased. Bonding between Al, Bi, and N has mainly a π character. Bismuth and aluminum atoms tend to promote high multiplicity states in small clusters. These new binary and ternary materials provide a potential new field in optoelectronics and high energetic material compounds. © 2014 Wiley Periodicals, Inc.     

六核钽铑二元混合簇合物的几何和电子结构

采用密度泛函理论对六核钽、铑八面体纯簇及其混合簇的几何结构和电子性质进行了研究.计算结果表明:大部分钽铑混合簇稳定构型的对称性均较低,为C1或Cs点群,只有[Ta2Rh4Cl4H8(CN)6]4-团簇的稳定构型对称性较高,为C2h或C4v点群;混合簇的最高占据分子轨道(HOMO)与最低未占据分子轨道(LUMO)能隙(ΔEH-L)均较小,介于0.52-1.00eV之间;混合簇的前线轨道主要由骨架金属原子的d电子贡献,随着Rh原子替代Ta原子个数的递增,Ta—Rh键对混合簇稳定构型所起作用逐渐增加,Ta—Ta键所起作用减小,而Rh—Rh键为非键或反键性质.     

Computational investigation of TiSin (n=2-15) clusters by the density-functional theory

The geometries, stabilities, and electronic properties of TiSin (n=2-15) clusters with different spin configurations have been systematically investigated by using density-functional theory approach at B3LYP/LanL2DZ level. According to the optimum TiSin clusters, the equilibrium site of Ti atom gradually moves from convex to surface, and to a concave site as the number of Si atom increases from 2 to 15. When n=12, the Ti atom in TiSi12 completely falls into the center of the Si outer frame, forming metal-encapsulated Si cages, which can be explained by using 16-electron rule. On the basis of the optimized geometries, various energetic properties are calculated for the most stable isomers of TiSin clusters, including the average binding energy, the highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO-LUMO) gap, fragmentation energy, and the second-order difference of energy. It is found that at size n=6,8,12 the clusters are more stable than neighboring ones. According to the Mulliken charge population analysis, charges always transfer from Si atoms to Ti atom. Furthermore, the HOMO-LUMO gaps of the most stable TiSin clusters are usually smaller than those of Sin clusters.     

Ionization energy of atoms obtained from GW self-energy or from random phase approximation total energies

A systematic evaluation of the ionization energy within the GW approximation is carried out for the first row atoms, from H to Ar. We describe a Gaussian basis implementation of the GW approximation, which does not resort to any further technical approximation, besides the choice of the basis set for the electronic wavefunctions. Different approaches to the GW approximation have been implemented and tested, for example, the standard perturbative approach based on a prior mean-field calculation (Hartree-Fock GW@HF or density-functional theory GW@DFT) or the recently developed quasiparticle self-consistent method (QSGW). The highest occupied molecular orbital energies of atoms obtained from both GW@HF and QSGW are in excellent agreement with the experimental ionization energy. The lowest unoccupied molecular orbital energies of the singly charged cation yield a noticeably worse estimate of the ionization energy. The best agreement with respect to experiment is obtained from the total energy differences within the random phase approximation functional, which is the total energy corresponding to the GW self-energy. We conclude with a discussion about the slight concave behavior upon number electron change of the GW approximation and its consequences upon the quality of the orbital energies.     

Molecular dynamics implementation in MSINDO: study of silicon clusters

Born-Oppenheimer molecular dynamics is implemented in the semiempirical self-consistent field molecular orbital method MSINDO. The method is employed for the investigation of the structure and dynamics of silicon clusters of various sizes. The reliability of the present parameterization for silicon compounds is demonstrated by a comparison of the results of simulated annealing and of density functional calculations of Si(n) clusters (n = 5-7). The melting behavior of the Si(7) cluster is investigated and the MSINDO results are compared to previous high-level calculations. The efficiency of the present approach for the treatment of large systems is demonstrated by an extensive simulated annealing study of the Si(45) and Si(60) clusters. New Si(45) and Si(60) structures are found and evaluated. The relative stability of various energy minimum structures is compared with density functional calculations and available literature data.     

Au12M (M=Na,Mg, Al,Si, P,S, Cl)团簇的结构、稳定性和电子性质

采用基于密度泛函理论的第一性原理方法系统地研究了Au12M(M=Na,Mg,Al,Si,P,S,Cl)团簇的结构、稳定性和电子性质.对团簇的平均结合能、镶嵌能、垂直离化势、最高占据分子轨道(HOMO)和最低未占据分子轨道(LUMO)的能级差、电荷布居分析、自然键轨道(NBO)进行了计算和讨论.对于Au12M(M=Na,Mg,Al)团簇,它们形成了内含M原子的最稳定的笼状结构.然而对于Au12M(M=Si,P,S,Cl)团簇,它们却形成了以M元素为顶点的稳定锥形结构.在这些团簇中发现Au12S团簇相对是最稳定的,这是由于Au12S团簇形成了稳定的满壳层的电子结构.自然电荷布居分析表明:对于所有的Au12M(M=Na,Mg,Al,Si,P,S,Cl)团簇电荷总是从Au原子转向M原子.自然键轨道和HOMO分析表明Au12M团簇中发生了Au原子的s-d轨道和M原子的p轨道间的杂化现象.     

TbSin(n=2-13)团簇的结构、电子及磁学性质

利用相对论密度泛函理论在广义梯度近似下研究TbSi_n (n=2-13)团簇的结构、稳定性、电子和磁学性质. 对团簇的平均结合能、离解能、电荷转移、最高占据分子轨道(HOMO)和最低未占据分子轨道(LUMO)的能级差、Mulliken 电荷分析和磁学性质进行了计算和讨论. TbSi_n团簇并没有像实验推测的那样在n=10形成嵌入式的结构. 我们推断电子亲和势的急剧变化不仅与嵌入式的结构有关, 而且与电子的固有稳定性相关.Mulliken 电荷分析表明电荷总是从Tb 原子转向Si 原子. 团簇的磁矩主要局域在Tb 原子的周围, 并且主要由f电子贡献, f 电子表现出局域性并且不参与化学成键. 以TbSi₁₀为例的分波态密度分析表明Tb与Si 原子间存在很强的sp轨道杂化.     

On Koopmans' theorem in density functional theory

This paper clarifies why long-range corrected (LC) density functional theory gives orbital energies quantitatively. First, the highest occupied molecular orbital and the lowest unoccupied molecular orbital energies of typical molecules are compared with the minus vertical ionization potentials (IPs) and electron affinities (EAs), respectively. Consequently, only LC exchange functionals are found to give the orbital energies close to the minus IPs and EAs, while other functionals considerably underestimate them. The reproducibility of orbital energies is hardly affected by the difference in the short-range part of LC functionals. Fractional occupation calculations are then carried out to clarify the reason for the accurate orbital energies of LC functionals. As a result, only LC functionals are found to keep the orbital energies almost constant for fractional occupied orbitals. The direct orbital energy dependence on the fractional occupation is expressed by the exchange self-interaction (SI) energy through the potential derivative of the exchange functional plus the Coulomb SI energy. On the basis of this, the exchange SI energies through the potential derivatives are compared with the minus Coulomb SI energy. Consequently, these are revealed to be cancelled out only by LC functionals except for H, He, and Ne atoms.     

Structures and electronic properties of the small rubidium‐doped silicon RbSin (n = 1–12) clusters

The geometries, relative stabilities, and electronic properties of small rubidium‐doped silicon clusters RbSi_n (n = 1–12) have been systematically investigated using the density functional theory at the B3LYP/GENECP level. The optimized structures show that lowest‐energy isomers of RbSi_n are similar with the ground state isomers of pure Si_n clusters and prefer the three‐dimensional for n = 3–12. The relative stabilities of RbSi_n clusters have been analyzed on the averaged binding energy, fragmentation energy, second‐order energy difference, and highest occupied molecular orbital‐lowest unoccupied molecular orbital energy gap. The calculated results indicate that the doping of Rb atom enhances the chemical activity of Si_n frame and the magic number is RbSi₂. The Mulliken population analysis reveals that the charges in the corresponding RbSi_n clusters transfer from the Rb atom to Si atoms. The partial density of states and chemical hardness are also discussed. © 2014 Wiley Periodicals, Inc.     

Thorium encapsulated caged clusters of germanium: Th@Ge(n), n = 16, 18, and 20

We report from ab initio calculations that thorium encapsulation can be used to stabilize highly symmetric cages of germanium with 16 and 20 atoms. The lowest energy structures of these clusters are different from the recently found silicon fullerenes and are similar to clusters found in bulk metallic alloys. The binding energies of these clusters are higher compared with the values for the elemental germanium clusters of comparable sizes, and this suggests a strong possibility of their experimental realization in large quantities. Also, Th@Ge(16) has a large highest occupied-lowest unoccupied molecular orbital (HOMO-LUMO) gap of 1.72 eV that makes it interesting for optoelectronic applications.     

Disparate effects of Cu and V on structures of exohedral transition metal-doped silicon clusters: a combined far-infrared spectroscopic and computational study

The growth mechanisms of small cationic silicon clusters containing up to 11 Si atoms, exohedrally doped by V and Cu atoms, are described. We find that as dopants, V and Cu follow two different paths: while V prefers substitution of a silicon atom in a highly coordinated position of the cationic bare silicon clusters, Cu favors adsorption to the neutral or cationic bare clusters in a lower coordination site. The different behavior of the two transition metals becomes evident in the structures of Si(n)M(+) (n = 4-11 for M = V, and n = 6-11 for M = Cu), which are investigated by density functional theory and, for several sizes, confirmed by comparison with their experimental vibrational spectra. The spectra are measured on the corresponding Si(n)M(+)·Ar complexes, which can be formed for the exohedrally doped silicon clusters. The comparison between experimental and calculated spectra indicates that the BP86 functional is suitable to predict far-infrared spectra of these clusters. In most cases, the calculated infrared spectrum of the lowest-lying isomer fits well with the experiment, even when various isomers and different electronic states are close in energy. However, in a few cases, namely Si(9)Cu(+), Si(11)Cu(+), and Si(10)V(+), the experimentally verified isomers are not the lowest in energy according to the density functional theory calculations, but their structures still follow the described growth mechanism. The different growth patterns of the two series of doped Si clusters reflect the role of the transition metal's 3d orbitals in the binding of the dopant atoms.     

Computational insight into the static and dynamic polarizabilities of aluminum nanoclusters

The static and dynamic polarizabilities for the lowest-energy structures of pure aluminum clusters up to 31 atoms have been investigated systematically within the framework of density functional theory. The size evolution of several electronic properties such as ionization potential, electron affinity, the energy gap between the highest occupied molecular orbital and lowest unoccupied molecular orbital, and chemical hardness have also been discussed for aluminum clusters. Our primary focus in this article, however, has been upon the study of polarizability of aluminum clusters, although we also looked at the role of other electronic properties. From the energetics point of view, the relative stability of aluminum clusters at different sizes is studied in terms of the calculated second-order difference in the total energy of cluster and fragmentation energy, exhibiting that the magic numbers of stabilities are n = 7, 13, and 20. Moreover, the minimum polarizability principle is used to characterize the stability of aluminum clusters. The results show that polarizabilities and electronic properties can reflect obviously the stability of clusters. Electronically, the size dependence of ionization potential and electron affinity of clusters is determined. On the basis of the Wood and Perdew model these quantities converge asymptotically to the value of the bulk aluminum work function.     

Theoretical studies on the bonding and thermodynamic properties of Ge n Si m (m+n=5) clusters: the precursors of germanium/silicon nanomaterials

Theoretical studies on the Ge n Si m clusters have been carried out using advanced ab initio approaches. The lowest energy isomers were determined for the clusters with compositions n+m=2-5. All possible isomers arising due to permutations of Ge and Si atoms were investigated. The L-shaped structure for the trimers, tetragonal with diagonal bond for tetramers, and a trigonal bipyramid for pentamers represent the energy optimized ground state geometries. The bonding analyses revealed that the trimers and tetramers are stabilized through multicenter pi bonding. In pentamers, this stabilizing factor is eliminated due to the further cluster growth. The ionization of clusters does not change their geometrical characteristics. The agreement of the calculated ionization and atomization energies with those obtained from the mass spectrometric studies (through estimated appearance potential) validated the reported structures of the clusters. The bonding properties of these species are discussed using their molecular orbital characteristics and analysis of natural bond orbital population data.     

Density functional study of platinum polyyne monomer,oligomer, and polymer: Ground state geometrical and electronic structures

Geometries of monomers and oligomers of a platinum polyyne and its free ligands were optimized using density functional theory with B3LYP hybrid functional. The LANL2DZ basis set was used for Pt and the 6‐31G* for other atoms in geometry optimizations. The electronic structures of these compounds were analyzed using Stuttgart/Dresden ECPs (SDD) basis set for metal atoms and 6‐311G* for others. The polymerization has very little effect on the bond lengths and by introducing the metal, the acetylide bond length increases slightly. The strong overlap between metal sp_x orbitals and σp_x orbitals of acetylides results in localized σ bonding. The hybridization between the ligand pπ orbitals and the platinum dπ orbital resulted in the π‐conjugation enhancement. This conjugation enhancement causes some effects such as the highest‐occupied molecular orbital–lowest‐unoccupied molecular orbital gap reduction and charge transfer characteristic of low‐energy vertical transitions. © 2013 Wiley Periodicals, Inc.     

Geometric and electronic properties of endohedral Si @ C74

The generalized gradient approximation based on density functional theory is used to analyze the geometric and electronic properties of Si @ C(74). It is found that among the five possible optimized geometries of Si @ C(74), the most favorable endohedral site of Si atom is under the center of a pentagon ring on the sigma(h) plane, i.e., Si @ C(74)-5, which is different from the center stable site for Si in C(74) calculated by the semiempirical molecular orbital calculations and molecular mechanics calculations, and it is also different from the stable site, i.e., under a [6, 6] bond along the C(2) axis on the sigma(h) plane in C(74) for metal atoms Ba, Ca, and Eu. The deformation charge density on the sigma(h) plane reveals that the Si-C bonds in Si @ C(74)-5 have covalent character, while the Mulliken charge analysis together with a longer Si-C bond length reveals that the Si-C bonds in Si @ C(74)-5 have ionic character. Therefore, we infer that Si-C bonds in Si @ C(74)-5 contain both covalent and ionic characters.     

Density functional study of structural and electronic properties of AlnN (1 ≤ n ≤ 12) clusters

Low‐lying equilibrium geometric structures of Al_nN (n = 1–12) clusters obtained by an all‐electron linear combination of atomic orbital approach, within spin‐polarized density functional theory, are reported. The binding energy, dissociation energy, and stability of these clusters are studied within the local spin density approximation (LSDA) and the three‐parameter hybrid generalized gradient approximation (GGA) due to Becke–Lee–Yang–Parr (B3LYP). Ionization potentials, electron affinities, hardness, and static dipole polarizabilities are calculated for the ground‐state structures within the GGA. It is observed that symmetric structures with the nitrogen atom occupying the internal position are lowest‐energy geometries. Generalized gradient approximation extends bond lengths as compared with the LSDA lengths. The odd–even oscillations in the dissociation energy, the second differences in energy, the highest occupied molecular orbital–lowest unoccupied molecular orbital (HOMO–LUMO) gaps, the ionization potential, the electron affinity, and the hardness are more pronounced within the GGA. The stability analysis based on the energies clearly shows the Al₇N cluster to be endowed with special stability. © 2005 Wiley Periodicals, Inc. Int J Quantum Chem, 2006     

Diamagnetic currents in the neutral He atoms

The mechanism of the occurrence of intraatomic diamagnetic currents in the neutral He atoms with microscopic sizes is investigated. It is found that most of all electrons can form electron pairs originating from attractive Coulomb interactions between two electrons with opposite spins occupying the 1s atomic orbital in the neutral He atom at 298 K. Intraatomic diamagnetic currents in the neutral He atoms with microscopic sizes can be explained by such electron pairing. The transition temperature Tc(He),(1s) value at which intraatomic diamagnetic currents can disappear in each He atom is estimated. The Tc(He),(1s) values for the neutral He atoms with microscopic sizes are estimated to be much larger than the superconducting transition temperatures Tc,BCS values for the conventional superconductors with macroscopic sizes. This result can be understood from continuous energy levels of electronic states in conventional superconductivity with macroscopic sizes, and from discrete energy levels of electronic states in the neutral He atoms with microscopic sizes. The energy difference between the occupied and unoccupied orbitals decreases with an increase in material size and thus the second-order perturbation effect becomes more important with an increase in material size. Therefore, the mechanism of the occurrence of intraatomic diamagnetic current in the neutral He atoms suggested in this research would not be true for materials with large sizes. The dependence of electronic properties on temperature in the diamagnetic currents in the neutral He atoms with microscopic sizes is studied and compared with that in the conventional superconductivity with macroscopic sizes.