Preparation and thermal properties of fire resistant metakaolin-based geopolymer-type coatings

Geopolymer-type coatings prepared by using an industrially available sodium silicate solution (SiO₂:Na₂O = 3.1) and metakaolin were applied to steel substrates. The coatings exhibited excellent adhesion to steel substrates achieving greater than 3.5 MPa tensile stress. Dissolution of the coating in water after 72 h of static testing varied between 12.8 and 34.5 wt.% depending on the water content of initial formulations. Coating formulations showed up to 3% thermal expansion after heating to 800 °C. Coatings maintained high structural integrity with steel substrates when subjected to a heat treatment by a gas torch and formulations calcined at 1000 °C for 1 h showed an X-ray amorphous structure.     

Effect of laser‐induced nanocrystallisation on the properties of electroless Ni‐P/Ni‐W‐P duplex coatings

This paper presents a comparative study of nanocrystallisation and the wear resistance of electroless plated Ni‐P/Ni‐W‐P duplex coatings with a single Ni‐W‐P coating before and after high‐ power diode laser treatment. Effects of the laser operating parameters on microstructures, in terms of crystallisation, porosity formation, phase transformation and grain growth, were investigated using scanning electron microscopy (SEM) with energy dispersive X‐ray spectroscopy (EDX) and quantitatively X‐ray Diffraction (XRD). Microhardness and wear behaviour of the coatings before and after laser treatment were evaluated by measurement of coating surface and cross‐section hardness as well as un‐lubricated friction and wear tests. The results revealed that in the case of laser treatment, the Ni‐P/Ni‐W‐P duplex coatings offered better wear resistance than the single Ni‐W‐P coating, while the as‐plated, single Ni‐W‐P coating showed better wear resistance than the Ni‐P/Ni‐W‐P duplex coatings. Adhesive wear mechanism prevails in the laser‐treated coatings when subjected to wear test against hardened steel material. The effects of microstructural characteristics in the coatings, in particularly the grain size of Ni₃P phase and the degree of crystallisation, on the adhesive wear behaviour have been investigated and found to be dominant besides the effect of hardness.     

Crystallisation and performance characteristics of high‐temperature annealed electroless Ni‐W‐P coatings

Electroless deposition of Ni–P based alloys is a well‐known commercial process that has numerous applications because of their excellent anticorrosive and wear properties. However, for some special occasions, like the components for gas making furnaces in chemical fertiliser industry, the coatings must be reinforced to withstand short‐term high temperatures between 600 °C and 700 °C as well as light erosive wear. Therefore, co‐deposition of high melting point metallic element, W, has been considered as a preferred choice. In the present study, two Ni–W–P alloy coatings were deposited on mild steel panels from different alkaline baths. The microstructures of the annealed coatings were characterised by quantitative XRD, XPS and SEM/EDS analysis techniques and their microhardness, friction and wear behaviour, corrosion mechanism as well as microstrain and residual stress are discussed in comparison with the as‐plated state. The results indicate that the hardness mainly depends on the volume fraction and crystallite size of Ni₃P phase; the uniform corrosion in sulfuric acid solution is closely related to the ratio of I_Ni/I_Ni3P as well as grain size. The wear mechanism of the high‐temperature annealed coating is dominated by abrasive wear, but the wear in the early stages started from mild adhesive wear caused by adhesion between the friction couples. Electroless deposited Ni‐W‐P alloys with high phosphorus present relatively good properties, including hardness, wear and corrosion resistance when 700 °C is applied for annealing process.     

Growth kinetics of SiGe/Si superlattices on bulk and silicon-on-insulator substrates for multi-channel devices

We have studied in reduced pressure chemical vapor deposition the growth kinetics of Si and Si_0.8Ge_0.2 on bulk Si(0 0 1) and on silicon-on-insulator (145 nm buried oxide/20 nm Si over-layer) substrates. For this, we have grown at 650 °C, 20 Torr 19 periods (Si_0.8Ge_0.2 19 nm/Si 32 nm) superlattices on both types of substrates that we have studied in secondary ion mass spectrometry, X-ray diffraction and cross-sectional transmission electron microscopy. The Si and SiGe growth rates together with the Ge content are steady on bulk Si(0 0 1), with mean values around 9.5 nm min⁻¹ and 20.2%, respectively. In contrast, growth rates decrease from ∼9.5 nm min⁻¹ down to values around 7.0 nm min⁻¹ (SiGe) and 6.3 nm min⁻¹ (Si), when the deposited thickness on SOI increases from 0 up to slightly more than 100 nm. They then go back up to values around 8.8–9.0 nm min⁻¹ as the thickness increases from 100 up to 400 nm. They then slowly decrease to values around 8.4–8.6 nm min⁻¹ as the thickness increases from 400 up to 800 nm. The Ge concentration follows on SOI exactly the opposite trend: an increase from 19.9% (0 nm) up to 20.6% (∼100 nm) followed by a decrease to values around 20.1% (400 nm) then a slow re-increase up to 20.4% (800 nm). These fluctuations are most likely due to the following SOI surface temperature variations: from 650 °C down to 638 °C (100 nm), back up to 648 °C (400 nm) followed by a slow decrease to 646 °C (800 nm). These data curves will be most useful to grow on conventional SOI substrates large number of periods, regular Si/Si_0.8Ge_0.2 superlattices that will serve as the core of multi-channel or three-dimensional nano-wires field effect transistors.     

Dependence of chemical composition and bonding of amorphous SiC on deposition temperature and the choice of substrate

Amorphous SiC has superior mechanical, chemical, electrical, and optical properties which are process dependent. In this study, the impact of deposition temperature and substrate choice on the chemical composition and bonding of deposited amorphous SiC is investigated, both 6 in. single-crystalline Si and oxide covered Si wafers were used as substrates. The deposition was performed in a standard low-pressure chemical vapour deposition reactor, methylsilane was used as the single precursor, and deposition temperature was set at 600 and 650 °C. XPS analyses were employed to investigate the chemical composition, Si/C ratio, and chemical bonding of deposited amorphous SiC. The results demonstrate that these properties varied with deposition temperature, and the impact of substrate on them became minor when deposition temperature was raised up from 600 °C to 650 °C. Nearly stoichiometric amorphous SiC with higher impurity concentration was deposited on crystalline Si substrate at 600 °C. Slightly carbon rich amorphous SiC films with much lower impurity concentration were prepared at 650 °C on both kinds of substrates. Tetrahedral Si-C bonds were found to be the dominant bonds in all deposited amorphous SiC. No contribution from Si-H/Si-Si but from sp² and sp³ C-C/C-H bonds was identified.     

Effects of temperature and carrier gas flow amount on the formation of GaN nanorods by the HVPE method

We fabricated one-dimensional GaN nanorods on AlN/Si (1 1 1) substrates at various temperatures, and carrier gas flow amount, using the hydride vapor phase epitaxy (HVPE) method. An AlN buffer layer of 50 nm thickness was deposited by RF sputtering for 25 min. Stalagmite-like GaN nanorods formed at a growth temperature of 650 °C. The diameters and lengths of GaN nanorods increase with growth time, whereas the density of nanorods decreases. And we performed the experiments by changing the carrier gas flow amount at a growth temperature of 650 °C and HCl:NH₃ flow ratio of 1:40. GaN nanorods, with an average diameter of 50 nm, were obtained at a carrier gas flow amount of 1340 sccm. The shape, structures, and optical characteristics of the nanorods were investigated by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence.     

Influence of annealing condition on the properties of sputtered hafnium oxide

Hafnium oxide thin films were deposited on p-type (1 0 0) silicon wafers by reactive dc magnetron sputtering. Prior to the deposition of HfO₂ films, a thin Hf film was deposited. Sputtered HfO₂ thin films deposited at room temperature remain amorphous at T<650°C and orthorhombic phases were observed above 650 °C. The monoclinic phase which is a stable HfO₂ polymorphic form appeared after annealing above 800 °C. Capacitance equivalent thickness values decreased and leakage characteristics are improved by the Hf interlayer and O₂ settlement process. The decrease of accumulation capacitance values upon annealing is due to the growth of an interfacial layer upon post-annealing. The flat band voltage (V_FB) shifts negatively due to positive charge generated during post-annealing.     

Structure of Ni/SiO2 films prepared by sol-gel dip coating

The sol-gel dip coating technique has been used to deposit composite oxide films (NiO)_x(SiO₂)_1−x with x = 0.1 on silicon wafers. Single and multilayer coatings allowed a variation of the film thickness from 70 to 400 nm. Film morphology, atomic structure and atomic composition have been investigated by transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). The local environment of the Ni atoms was characterized by extended X-ray absorption fine structure (EXAFS). The samples were studied in the as-prepared state and after annealing in H₂ at 600 °C for 1 h. The structural and chemical state evolution of clusters present inside the silica matrix is discussed in terms of out-of-equilibrium reaction processes specific to low-dimensional objects and superficial effects.     

Investigation on the crystal growth process of spherical Si single crystals by melting

Spherical Si single crystals with a diameter of approximately 1 mm were grown by melting for solar cell applications. The start sources were spherical Si multicrystals fabricated by a dropping method, which had various irregular shapes. Spherical Si multicrystals were melted into droplets and recrystallized on a quartz plate sample holder that was coated with Si₃N₄. It was found that a surface coating of SiO₂ layer on the start sources and oxygen atmosphere during melting and recrystallization were essential to achieve almost perfect spherical shape. Defect-free single crystalline spherical Si could be obtained at recrystallization temperature ranging from 1400 to 1330 °C, corresponding to an undercooling ranging from 14 to 84 °C, with a yield of nearly 100%. At recrystallization temperatures higher than 1380 °C, the recrystallized spherical Si crystals were almost perfect spheres, whereas small protuberances were formed when the recrystallization temperature was lower than 1360 °C. It was also found that that melting at a temperature close to the melting point of Si (at ~1414 °C), a slow cooling rate of ~1 °C/min before recrystallization and relatively fast cooling rate of ~20 °C/min after recrystallization were important for achieving high carrier lifetime. The average carrier lifetime was greatly improved from lower than 2.5 μs of start sources up to ~7.5 μs by melting at optimized conditions. The influences of residual oxygen on the carrier lifetime of recrystallized spherical Si are discussed based on the measurement results with Fourier transform infrared spectrometer.     

Electrical, structural and optical properties of SnO2 thin films prepared by spray pyrolysis

This study investigated the effect of the substrate temperature on the structural, optical, morphological, and electrical properties of undoped SnO₂ films prepared by a spray deposition method. The films were deposited at various substrate temperatures ranging from 300-500 °C in steps of 50 °C and characterized by different optical and structural techniques. X-ray diffraction studies showed that the crystallite size and preferential growth directions of the films were dependent on the substrate temperature. These studies also indicated that the films were amorphous at 300 °C and polycrystalline at the other substrate temperatures used. Infrared and visible spectroscopic studies revealed that a strong vibration band, characteristic of the SnO₂ stretching mode, was present around 630 cm⁻¹ and that the optical transmittance in the visible region varied over the range 75-95% with substrate temperature, respectively. The films deposited at 400 °C exhibited the highest electrical conductivity property.     

Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (1 1 1) B using N2 carrier gas

The influence of temperature on selective area (SA) InAs nanowire growth was investigated for metal-organic vapor phase epitaxy (MOVPE) using N₂ as the carrier gas and (1 1 1) B GaAs substrates. In contrast to the growth temperature range – below 600 °C – reported for hydrogen ambient, the optimal growth temperature between 650 and 700 °C was 100 K higher than the optimal ones for H₂ carrier gas. At these temperatures, nanowires with aspect ratios of about 80 and a symmetric hexagonal shape were obtained. The results found are attributed to the physical and chemical properties of the carrier gas.     

In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

To improve crystal quality of InN, an in-situ cyclic rapid pulse annealing during growth was carried out using infrared-lamp-heated molecular beam epitaxy. A cycle of 4 min growth of InN at 400 °C and 3 s pulse annealing at a higher temperature was repeated 15 times on AlN on Si substrate. Annealing temperatures were 550, 590, 620, and 660 °C. The back of Si was directly heated by lamp irradiation through a quartz rod. A total InN film thickness was about 200 nm. With increasing annealing temperature up to 620 °C, crystal grain size by scanning electron microscope showed a tendency to increase, while widths of X-ray diffraction rocking curve of (0 0 0 2) reflection and E₂ (high) mode peak of Raman scattering spectra decreased. A peak of In (1 0 1) appeared in X-ray diffraction by annealing higher than 590 °C, and In droplets were found on the surface by annealing at 660 °C.     

Internal friction and dynamic modulus of metaphosphate glass

Internal friction and dynamic modulus were measured by a forced torsional vibration method at 0.5-5 Hz in the range of −120 to 300 °C for four kinds of metaphosphate glasses, 50MgO · 50P₂O₅(MgP), 48SrO · 52 P₂O₅(SrP), 25MgO · 25SrO · 50P₂O₅(MgSrP) and 25Na₂O · 25MgO · 50P₂O₅(NaMgP). Three internal friction peaks appeared for MgP at ∼−30, ∼105 and ∼230 °C, and the activation energies of the relaxation behavior obtained from the low, intermediate and high temperature regions were ∼110, ∼250 and ∼580 kJ/mol, respectively. For SrP, those three peaks were also obtained at ∼−45, ∼60 and ∼195 °C, and the activation energies were estimated as ∼95, ∼200 and ∼600 kJ/mol at each temperature, respectively. Two peaks appeared at ∼−50 and ∼160 °C for MgSrP, and ∼−55 and ∼70 °C for NaMgP, respectively. The obtained activation energies were ∼100 and ∼180 kJ/mol for MgSrP, and ∼75 and ∼200 kJ/mol for NaMgP, respectively. It is assumed that the primary peaks (the low temperature region) were influenced by the behavior of Mg²⁺, Sr²⁺ and Na¹⁺ ions, and the secondary peaks (the intermediate temperature region) were based on non-bridging oxygen associated with Mg²⁺, Sr²⁺ and Na¹⁺ ions. Dynamic modulus showed a decreased gradually with increasing temperature in the present temperature range for all the compositions.     

Flux growth and morphology analysis of Na3VO2B6O11 crystals

Colorless and transparent Na₃VO₂B₆O₁₁ (NVB) crystal has been grown by the top seeded solution growth method using NaVO₃ as the flux at cooling rates of 0.8–1.5 °C/day, in the temperature range 610–650 °C. A well-developed morphology of the crystals was observed and analyzed. The grown crystals were characterized by powder X-ray diffraction (PXRD), infrared spectroscopy and second harmonic generation (SHG) test.     

Preparation and characterization of ZnO-TiO2 films obtained by sol-gel method

The sol-gel route has been applied to obtain ZnO-TiO₂ thin films. For comparison, pure TiO₂ and ZnO films are also prepared from the corresponding solutions. The films are deposited by a spin-coated method on silicon and glass substrates. Their structural and vibrational properties have been studied as a function of the annealing temperatures (400-750 °C). Pure ZnO films crystallize in a wurtzite modification at a relatively low temperature of 400 °C, whereas the mixed oxide films show predominantly amorphous structure at this temperature. XRD analysis shows that by increasing the annealing temperatures, the sol-gel Zn/Ti oxide films reveal a certain degree of crystallization and their structures are found to be mixtures of wurtzite ZnO, Zn₂TiO₄, anatase TiO₂ and amorphous fraction. The XRD analysis presumes that Zn₂TiO₄ becomes a favored phase at the highest annealing temperature of 750 °C. The obtained thin films are uniform with no visual defects. The optical properties of ZnO-TiO₂ films have been compared with those of single component films (ZnO and TiO₂). The mixed oxide films present a high transparency with a slight decrease by increasing the annealing temperature.     

Synthesis of Fe-doped nanosized SnO2 powders by chemical co-precipitation method

Fe-doped nanosized SnO₂ powders were prepared by chemical co-precipitation technique using SnCl₄ and FeCl₃ as starting materials and water as a carrier. Experimental results show that the grain size of Fe-doped SnO₂ crystallites is smaller than 5 nm, and the particle size is smaller than 15 nm. When the calcination temperature is below 650 °C, the SnO₂ crystal has tetragonal lattice structure. At higher temperature the particles become a two-phase mixture of tetragonal SnO₂ and hexagonal Fe₂O₃ crystallites. Fe doping can obviously prevent the growth of nanosized SnO₂ crystallites, and a higher Fe-doping concentration is more effective to prevent the growth of nanosized SnO₂ particles when the calcination temperature is below 550 °C.     

Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3

Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga₂O₃ powder to GaN under an NH₃/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga₂O₃ starts at ∼650 °C, followed by decomposition of GaN at ∼1100 °C. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 800–1000 °C. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga₂O₃ crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga₂O₃ by NH₃ whereby nitridation of β-Ga₂O₃ proceeds via the intermediate vapor species Ga₂O(g).     

Structural and optical properties of thin films prepared from surface modified ZrO2

This paper describes the preparation and characterization of ZrO₂ thin films deposited on silicon wafer by spin coating method. Nanocrystalline ZrO₂ was synthesized by hydrothermal method using zirconium (IV)-n-propoxide as a precursor material. Surface of the ZrO₂ particles was then modified with 2-acetoacetoxyethyl methacrylate used as a copolymer for coatings. The optical properties, nanostructure and surface morphology of the thin films prepared from surface modified ZrO₂ nanoparticles were examined by optical spectroscopy, X-ray diffraction and scanning electron microscopy, respectively. It was found that the films deposited on silicon wafer have crystalline structure of monoclinic (111) at temperature of 150 °C. It was observed that films depict very dense material that does not present any granular or columnar structure. It was found that optical transparency of thin ZrO₂ films distributed in the range of 30-40 percent in the spectral range 400-800 nm. Refractive index of ZrO₂ films were determined as functions of ZrO₂ content and it was found that the refractive index increases from 1.547 to 1.643 with increased ZrO₂ content.     

Effect of heat treatment on corrosion properties of mixed sol gel silica-titania (7-3) coating

In this paper, the sol-gel method has been used for preparing silica-titania coats with a molar ratio of 7:3 on TiNi that were heat treated at 300 °C and 500 °C. For studying and investigating the property of corrosion and microstructure of coats; SEM (scanning electron microscopy), EIS (electrochemical impedance spectroscopy), polarization dynamic and roughness measurement have been used and XRD (X-ray diffraction) has been also used for characterizing the coats. Heat treatment at 500 °C caused the increase of porosity and coating cracking that finally caused the decrease of corrosion resistance. The best corrosion resistance was achieved for the sample that was heat treated at 300 °C. The structure of the heat treated sample at 300 °C was amorphous and the increase of temperature of heat treatment from 300 °C to 500 °C caused crystallization and decrease of the corrosion resistance. Crystallization affected both corrosion resistance and surface roughness.     

Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane,silane and trisilane

Dichlorosilane (DCS), silane and trisilane have been investigated as Si precursors for low temperature (<700 °C) Si reduced pressure chemical vapor deposition. DCS and silane are limited to growth temperatures higher than 600–650 and 500 °C, respectively. At lower temperatures, absence of either Cl or H desorption from the surface impedes Si growth with acceptable growth rate (>5 Å/min). Trisilane permits the growth of Si at lower temperatures below 350 °C due to a specific growth mechanism enhancing H desorption. Layers grown at temperatures lower than 500 °C are defective, irrespective of the carrier gas, pressure and precursor flow used.