Dependence of chemical composition and bonding of amorphous SiC on deposition temperature and the choice of substrate

Amorphous SiC has superior mechanical, chemical, electrical, and optical properties which are process dependent. In this study, the impact of deposition temperature and substrate choice on the chemical composition and bonding of deposited amorphous SiC is investigated, both 6 in. single-crystalline Si and oxide covered Si wafers were used as substrates. The deposition was performed in a standard low-pressure chemical vapour deposition reactor, methylsilane was used as the single precursor, and deposition temperature was set at 600 and 650 °C. XPS analyses were employed to investigate the chemical composition, Si/C ratio, and chemical bonding of deposited amorphous SiC. The results demonstrate that these properties varied with deposition temperature, and the impact of substrate on them became minor when deposition temperature was raised up from 600 °C to 650 °C. Nearly stoichiometric amorphous SiC with higher impurity concentration was deposited on crystalline Si substrate at 600 °C. Slightly carbon rich amorphous SiC films with much lower impurity concentration were prepared at 650 °C on both kinds of substrates. Tetrahedral Si-C bonds were found to be the dominant bonds in all deposited amorphous SiC. No contribution from Si-H/Si-Si but from sp² and sp³ C-C/C-H bonds was identified.     

Epitaxial growth of tin oxide film on TiO2(1 1 0) using molecular beam epitaxy

Growth of tin oxide thin films using molecular beam epitaxy in a pyrolyzed nitrogen dioxide atmosphere on a titanium dioxide (1 1 0) substrate was investigated using X-ray photoelectron spectroscopy (XPS), electron diffraction, and atomic force microscopy (AFM). Properties of deposited films were studied for their dependence on substrate temperature and oxidation gas pressure. Analyses using XPS data revealed that tin atoms were fully oxidized to Sn⁴⁺ and SnO₂ films were grown epitaxially in deposition conditions of substrate temperatures of 627 K or higher and NO₂ pressure greater than 3×10⁻³ Pa. At a substrate temperature of 773 K, a smooth surface with atomic steps was visible in the SnO₂ films, but above or below this temperature, fine grains with crystal facets or porous structures appeared. At pressures of 8×10⁻⁴ to 3×10⁻⁴ Pa, the randomly oriented SnO phase was dominantly grown. Further decreasing the pressure, the Sn metal phase, which was epitaxially crystallized at less than 500 K, was also grown.     

A study about the stabilization of anatase phase at high temperatures on sol-gel cerium and copper doped titania and titania-silica powders

Copper and cerium oxides doped titania samples, as well as silica-titania samples were prepared through sol-gel process by using titanium butoxyde as precursor. The obtained samples were characterized by X-ray diffractometry and scanning electron microscopy. The main objective of the proposed study is to promote the stabilization of anatase phase at high temperatures. The obtained experimental results show that cerium doped titania samples stabilizes the anatase phase until 800 °C, whereas copper doped samples calcinated at the same temperature are a mixture of anatase and rutile phases. So, CeO₂ is a better stabilizer for anatase phase than CuO. On the other hand, based on previously reported data it can be concluded that both, CeO₂ and CuO are better stabilizers for anatase phase than SnO₂. It is also verified that the total amount of silica in the titania-silica double oxide increases the temperature required for crystallization, and as a consequence, the anatase phase is stabilized at higher temperatures i.e. up to 1200 °C.     

Conversion of batch to molten glass, II: Dissolution of quartz particles

Quartz dissolution during the batch-to-glass conversion influences the melt viscosity and ultimately the temperature at which the glass forms. Batches to make a high-alumina borosilicate glass (formulated for the vitrification of nuclear waste) were heated at 5 K min^− 1 and quenched from temperatures of 400 to 1200 °C at 100 K intervals. The batches contained quartz as a silica source, with particles ranging from 5 to 195 μm in diameter. The content of unreacted quartz in the samples was determined with X-ray diffraction. Most of the fine quartz dissolved during the early batch reactions (at temperatures < 800 °C), whereas coarser quartz dissolved mostly in a continuous glass phase via diffusion. The mass-transfer coefficients were assessed from the data as functions of the initial particle sizes and the temperature. A series of batches were also tested that contained nitrated components and additions of sucrose, known to accelerate melting. While sucrose addition had no discernible impact on quartz dissolution, nitrate batches melted somewhat more slowly than batches containing carbonates and hydroxides in addition to nitrates.     

Growth of GaN films on PLD-deposited TaC substrates

GaN films were grown by metal organic chemical vapor deposition on TaC substrates that were created by pulsed laser deposition of TaC onto (0 0 0 1) SiC substrates at ∼1000 °C. This was done to determine if good quality TaC films could be grown, and if good quality GaN films could be grown on this closely lattice matched to GaN, conductive material. This was done by depositing the TaC on on-axis and 3° or 8° off-axis (0 0 0 1) SiC at temperatures ranging from 950 to 1200 °C, and examining them using X-ray diffraction, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. The GaN films were grown on as-deposited TaC films, and films annealed at 1200, 1400, or 1600 °C, and examined using the same techniques. The TaC films were polycrystalline with a slight (1 1 1) texture, and the grains were ∼200 nm in diameter. Films grown on-axis were found to be of higher quality than those grown on off-axis substrates, but the latter could be improved to a comparable quality by annealing them at 1200–1600 °C for 30 min. TaC films deposited at temperatures above 1000 °C were found to react with the SiC. GaN films could be deposited onto the TaC when the surface was nitrided with NH₃ for 3 min at 1100 °C and the low temperature buffer layer was AlN. However, the GaN did not nucleate easily on the TaC film, and the crystallites did not have the desired (0 0 0 1) preferred orientation. They were ∼10 times larger than those typically seen in films grown on SiC or sapphire. Also the etch pit concentration in the GaN films grown on the TaC was more than 2 orders of magnitude less than it was for growth on the SiC.     

Hydrogen formation observed during high pressure treatment of silica glass

Silica glass treated at high pressures and temperatures (1-3 GPa, 1100-1250 °C) in a solid-media pressure apparatus incorporated observable quantities of hydroxyl and hydride. The FTIR absorbance signals for these species appeared only when the glass sample was pressurized in the presence of water together with graphite at a high temperature, and the hydroxyl signal disappeared completely when the glass was heat-treated at 1000 °C in air for 1 h. These results indicate that hydrogen diffused into and reacted with the silica glass during the high pressure-temperature treatment. Reduction of H₂O by graphite at high pressure/temperature conditions is the probable source of hydrogen.     

Interfacial reactions between tellurite melts and silica during the production of microstructured optical devices

Interfacial reactions between silica glass and tellurite melts were studied under confined conditions in the temperature regime of 400-700 °C, applying two different sampling techniques: isothermal heat-treatment of a several micrometer thick tellurite film, confined in a silica/tellurite/silica sandwich, and capillary filling of tellurite melts into silica microcapillaries. The sandwich technique provides detailed ex situ insights on the interface chemistry, microstructure and diffusion after given treatment times and temperatures. Data on dynamic viscosity, surface tension, wetting behaviour and eventual scaling effects was obtained from the capillary filling technique. For temperatures > 500 °C, silica is completely wet by the considered tellurite melts. At T > 600 °C and for a treatment time of 20 min or longer, cationic diffusion of Na⁺ and Te⁴⁺ into the silica substrate occurs to a depth of several micrometers. At the same time, the tellurite melt attacks the silica surface, leading to the formation of a stationary silica-tellurite reaction layer and silica dissolution. Dissolved silica was observed to re-precipitate from the tellurite melt by liquid-liquid phase separation. In the early reaction stages, as a result of alkali diffusion into the silica substrate, β-quartz crystallizes at the interface (what can be avoided by using alkali-free filling glasses). Obtained data set the boundary conditions for the generation of tellurite-silica all-solid fiber waveguides by melt infiltration of silica photonic crystal fibers or microcapillaries.     

Electrical Conductivity in Polycrystalline Copper Oxide Thin Films

This study presents a preliminary investigation on the electrical properties and the electronic structure of the copper-oxygen system. Thin films, prepared by high vacuum sputtering on glass and MgO substrates, were oxidised both at constant temperatures and by heating continuously from a low to a high temperature, and the variations in the resistance with oxidation were measured. The final oxide was found to be CuO. The room temperature resistance after oxidation is very much higher than that before oxidation, indicating a transition from metal to insulator. At oxidation temperatures below 600 K, the conductivity decreased gradually; a steeper decrease occurred at higher temperatures when an apparent semiconducting behaviour was observed in some cases. At temperatures above 600 K, the behaviour of the conductivity followed the form σ(T) = σ(0) + αTβ, which suggested weak localization or electron-electron interaction.     

Fluorescent compacts prepared by the entrapment of benzoxazole type dyes into a silica matrix at high pressure

We have produced silica-gel compacts doped with 2,5-Bis(benzoxazol-2^′-yl)-4-methoxyphenol dye using high-pressure processing of powders synthesized by the sol-gel technique. The high-pressure compaction of powders with three different dye concentrations was done at 4.5 GPa and room temperature. We have measured optical and mechanical properties of the obtained compacts. They were very stable, transparent, crack free, hard (3.56 ± 0.07 GPa) and dense (1.95 ± 0.03 g/cm³), being resistant to polishing and leaching, which enables its use in optical applications. The Stokes shift observed was higher than 100 nm indicating that the intramolecular proton-transfer in the electronically excited state (ESIPT) of this dye is maintained, even in an OH rich environment like silica. A shift to higher wavelength in the fluorescence spectra of the compacts, attributed to the increasing in the conjugation of the π system, was observed.     

Defect-mediated self-diffusion in calcium aluminosilicate glasses: A molecular modeling study

The mechanism of self-diffusion in calcium aluminosilicate glasses is investigated at the atomistic level using molecular dynamics (MD) simulations. We study nine glass compositions having the fixed ratio R = [CaO]/[Al₂O₃] = 1 and the concentration of SiO₂ varied from 11.8 to 76.5 mol%. The diffusion coefficient is calculated for each composition at different temperatures from 300 to 6000 K in steps of 300 K. The self-diffusivities of the various elements are found to be close to each other in magnitude, signifying the cooperative nature of the atomic movement. Network “defects” such as miscoordinated cations, non-bridging oxygen, and oxygen triclusters are also studied as a function of temperature and composition. We find that the behavior of self-diffusion correlates well with the concentration of network defects. A model of self-diffusion in calcium aluminosilicate glasses is proposed where diffusion is considered as a defect-mediated process resulting from bond-switching reactions at high temperature.     

Effect of the temperature on the TMOS sono-hydrolysis and a study of the structure of the resulting aged sonogels

The effect of temperature on the oxalic acid catalyzed sono-hydrolysis of tetramethoxysilane (TMOS) was studied by means of a heat flux calorimetric method. The activation energy of the process was measured as (24.5 ± 0.8) kJ/mol in the temperature range between 10 and 50 °C. The structural characteristics of the resulting sonogels, after long period of aging in saturated conditions, were studied by means of small angle X-ray scattering. The structure can be described as formed by ∼2.7 nm mean size mass fractal-like aggregates (clusters) of primary silica particles of ∼0.3 nm mean size, all imbibed in a liquid phase. The average mass fractal dimension of the clusters was found to be 2.58. The primary particle density was estimated as 2.23 g/cm³, in good agreement with the value frequently quoted for fused silica. The volume fraction of the clusters in the saturated sonogels was estimated as about 28%. The moment in which the meniscus of the liquid phase penetrates into the clusters under rapid evaporation process has been detected by an inflection in the first derivative of the curve of weight loss in a simple thermogravimetric test.     

The use of the final thermally stimulated discharge current technique to study the molecular movements around glass transition

During electric polarization charge is injected into the material. The structure is decorated with space charge and during the subsequent heating an apparent peak and the genuine peaks that are related to dipole randomization and charge detrapping are observed. The method is used here to analyze the molecular movements in polyimide in the temperature range from 293 to 623 K. Two weak relaxations have been observed around 337 K and around 402 K. The electrical conductivity changes with temperature in agreement with the Arrhenius law only below (W = (0.84 ± 0.03) eV ) and above ( W = (0.82 ± 0.03) eV) the temperature range where the β relaxation is observed. The variation of the electrical conductivity with temperature, in the range of the β relaxation, is controlled by the variation of the charge currier mobility with temperature and it shows a non-Arrhenius behavior. We suggest that the β₁ sub-glass relaxation is related to the rotation or oscillation of phenyl groups and the β₂ sub-glass relaxation is related to the rotation or oscillation of the imidic ring. At higher temperatures an apparent peak was observed. The relaxation time of the trapped charge, at 573 K, is high than 8895 s.     

Synthesis of sodium silicate-based hydrophilic silica aerogel beads with superior properties: Effect of heat-treatment

This work demonstrates the synthesis of hydrophilic and hydrophobic high surface area silica aerogel beads with a large pore volume. Wet gel silica beads were modified and heat-treated under atmospheric pressure after modification of the surface by trimethychlorosilane (TMCS). The effects of heat treatment on the physical (hydrophobicity) and textural properties (specific surface area, pore volume, and pore size) of silica aerogel beads were investigated. The results indicated that hydrophobicity of the silica aerogel beads can be maintained up to 400 °C. The hydrophobicity of the silica aerogel beads decreased with increasing temperature in the range of 200-500 °C, and the beads became completely hydrophilic after heat treatment at 500 °C. The specific surface area, cumulative pore volume, and pore size of the silica aerogel beads increased with increasing temperature. Heating the TMCS modified bead gel at 400 °C for 1 h resulted in silica aerogel beads with high surface area (769 m²/g), and large cumulative pore volume (3.10 cm³/g). The effects of heat treatment on the physical and textural properties of silica aerogel beads were investigated by field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), thermogravimetric and differential analysis (TG-DTA), Fourier-transform infrared spectroscopy (FT-IR), and Brunauer, Emmett and Teller (BET) and BJH nitrogen gas adsorption and desorption methods.     

Preparation and optical properties of titania-doped hybrid polymer via anhydrous sol-gel process

Incorporation of metal alkoxides (Ti, Zr, etc.) for tuning the optical properties of silica glasses by the sol-gel process is of significant interest for optical applications. In this paper, we report an anhydrous sol-gel process for preparation of photosensitive titania-doped hybrid glassy polymer with good homogeneity and high doping concentration (TiO₂ up to 40 mol%). The process consists of two steps: in the first step methacryloxypropyltrimethoxysilane (MPS) is hydrolyzed by boric acid through ligand exchange reaction (OH↔OR) under anhydrous conditions; and in the second step dimethyldimethoxysilane (DMDMS), diphenyldimethoxysilane (DPhDMS) and titanium ethoxide (TET) were added to condense with the silanols formed in the first step. The optical properties of the synthesized hybrid polymer were studied, and results showed that the hybrid material has low OH absorption, low optical losses (0.45 dB/cm at 1550 nm and 0.16 dB/cm at 1310 nm respectively), and good thermo-optical linearity with tuneable refractive index. The effect of TiO₂ doping in reducing the OH concentration of the hybrid material was observed, and the mechanism for this effect is discussed.     

Composition and polyamorphism in supercooled yttria-alumina melts

By extending recent work on liquid-liquid transitions in supercooled yttria-alumina AYx liquids we draw attention to the compositional dependence of the structure factor of the high density liquid, arguing that this is sufficiently sensitive to discriminate between liquids at the level of a few %. Comparing structure factor differences between liquids of different compositions and in the same liquid AY20 between high and low temperatures straddling the transition at 1788 K between a high density liquid (HDL) and a low density liquid (LDL) enables compositional phase separation to be ruled out. It points instead to kinetic changes in polyhedral configurational order being the drivers for this polyamorphic transformation. Rotor behaviour observed in levitated liquid drops used in the high temperature experiments enables the reversibility of the LLT transition (LLT) and the associated changes in entropy and density to be identified. Evidence for critical-like behaviour in the structural relaxation time and in the fluctuation correlation length is presented. By re-examining recent work which failed to find the structural and thermal signatures for the LLT in liquid AY20 at 1788 K we present evidence for the LLT occurring instead in liquid AY15 at 1940 K, suggesting that the liquid-liquid transition temperature in AYx liquids decreases with increasing yttria content.     

Structure of partially reduced xPbO (1 − x)SiO2 glasses: combined EXAFS and MD study

We have studied the structure of partially reduced lead-silicate glasses using combined EXAFS (extended X-ray absorption fine structure) and MD (molecular dynamics) methods. The analysis was performed for glasses of x[(1 − p)Pb pPbO] (1 − x)SiO₂ composition, x = 0.3, 0.5, 0.7, where parameter (1 − p) describes the degree of reduction, i.e. the content of the granular metallic phase, appearing as the result of the reduction process (e.g. annealing in hydrogen atmosphere). In the EXAFS experiment (1 − p) was expressed via the time of reduction realized at 400 °C (1.5 h, 24 h, 70 h), whereas in the MD simulations it was determined precisely by using proper numbers of particles (corresponding to (1 − p) = 0.0, 0.25, 0.5, 0.75 and 1.0). In the paper we describe in detail the local structure around lead atoms and its changes in the function of glass composition and reduction degree. The tendency for agglomeration of Pb⁰ into clusters, the formation of the granular metallic phase, and continuity of silica and lead oxide subnetworks are discussed. A good agreement between EXAFS-extractcd and MD-extracted parameters of the short-range structure encouraged us to preform a medium-range order analysis, based on the MD simulations only. Moreover, combining the EXAFS and MD methods we could correlate the reduction time (technological parameter) with the degree of reduction (1 − p) and the actual state of the granular structure. The latter relation may be useful for controlled production of reduced glasses of pre-requcstcd physical properties.     

Preparation and characterization of ZnO-TiO2 films obtained by sol-gel method

The sol-gel route has been applied to obtain ZnO-TiO₂ thin films. For comparison, pure TiO₂ and ZnO films are also prepared from the corresponding solutions. The films are deposited by a spin-coated method on silicon and glass substrates. Their structural and vibrational properties have been studied as a function of the annealing temperatures (400-750 °C). Pure ZnO films crystallize in a wurtzite modification at a relatively low temperature of 400 °C, whereas the mixed oxide films show predominantly amorphous structure at this temperature. XRD analysis shows that by increasing the annealing temperatures, the sol-gel Zn/Ti oxide films reveal a certain degree of crystallization and their structures are found to be mixtures of wurtzite ZnO, Zn₂TiO₄, anatase TiO₂ and amorphous fraction. The XRD analysis presumes that Zn₂TiO₄ becomes a favored phase at the highest annealing temperature of 750 °C. The obtained thin films are uniform with no visual defects. The optical properties of ZnO-TiO₂ films have been compared with those of single component films (ZnO and TiO₂). The mixed oxide films present a high transparency with a slight decrease by increasing the annealing temperature.     

Synthesis and characterization of strip-shape diamonds from Fe-based alloy and graphite system under high pressure and high temperature

The unusual strip-shape diamond crystals were successfully synthesized in the system of Fe-based powder alloy and graphite under pressures of 5.6–5.8 GPa and temperatures of 1600–1650 K in a cubic anvil high pressure high temperature (HPHT) apparatus (SPD-6×1200). The synthetic diamond crystals have a strip-shape with light green color. The lengths of the crystals are 0.6–0.8 mm with length to diameter ratios around 2.0–2.5. SEM photographs reveal that the crystals have two main kinds of shapes: one elongated along the (1 0 0) and the other along the (1 1 1) directions. The FTIR spectra of the diamond synthesized indicate that its nitrogen concentration is higher than the normal diamond crystal.     

Synthesis of ORMOSIL silica/rhodamine 6G: Powders and compacts

The sol-gel method was used to prepare a silica matrix with rhodamine 6G. This dye was chemically bonded to silica matrix by grafting reactions, obtaining ORMOSIL/R6G powder, at two different concentrations, 0.03 mmol of dye/g silica and 0.009 mmol of dye/g silica, called ORMOSIL1 and ORMOSIL2, respectively. Fluorescent compacts were also obtained, through the high-pressure processing of these powders, at 7.7 GPa and room temperature. The microstructure, chemical composition and thermal stability of the powders and compacts were comparatively studied, by N₂ adsorption/desorption isotherms, FTIR spectroscopy, thermogravimetric analyses (TGA) and elemental analyses for carbon, hydrogen, and nitrogen (CHN). The optical behavior was studied by fluorescence spectroscopy. The ORMOSIL1 compacts were completely opaque showing that the compaction was not effective, due to the high organic grade incorporated into the starting ORMOSIL1 powder. The ORMOSIL2 compacts were transparent showing an effective compaction, which are in agreement to the great surface area and porosity reduction. Additionally, it was observed in TGA results, the retention of the organics in these samples up to temperatures near 300 °C. The fluorescence emission showed that the dye was dispersed in molecular level in all samples.     

Diffusion of chromium in chrysoberyl

Cr³⁺ diffusion in chrysoberyl (BeAl₂O₄) irradiated by H⁺ ions and electrons has been studied and compared with diffusion in non-irradiated samples. Chrysoberyl crystals were irradiated with 6 MeV H⁺ ions to fluencies of 1×10¹⁶ cm^–2 for 25 min and with 10 MeV electrons to fluencies of 2×10¹⁷ cm^–2 for 1 h. Three different types of samples, which were doped with Cr³⁺, were annealed in horizontal alumina tube furnaces by 50 K intervals in the temperature range from 1773 to 1923 K for 200 h. Scanning electron microscope–energy dispersive X-ray spectrometer (SEM–EDX) was used to measure the diffusion. Arrhenius equations for the diffusion coefficient for Cr³⁺ in the temperature range 1773–1923 K were developed: