Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

We have studied the low-temperature growth of gallium nitride arsenide (GaN)As layers on sapphire substrates by plasma-assisted molecular beam epitaxy. We have succeeded in achieving GaN_1−xAs_x alloys over a large composition range by growing the films much below the normal GaN growth temperatures with increasing the As₂ flux as well as Ga:N flux ratio. We found that alloys with high As content x>0.1 are amorphous and those with x<0.1 are crystalline. Optical absorption measurements reveal a continuous gradual decrease of band gap from ∼3.4 to ∼1.35 eV with increasing As content. The energy gap reaches its minimum of ∼1.35 eV at x∼0.6–0.7. The structural, optical and electrical properties of these crystalline/amorphous GaNAs layers were investigated. For x<0.3, the composition dependence of the band gap of the GaN_1−xAs_x alloys follows the prediction of the band anticrossing model developed for dilute alloys. This suggests that the amorphous GaN_1−xAs_x alloys have short-range ordering that resembles random crystalline GaN_1−xAs_x alloys.     

Electrical properties of AsxSe1−x (x ≤ 0.05) Mott-barriers

We have experimentally measured the current-voltage and capacitance-voltage characteristics of Au/amorphous As_xSe_1 − x (x ≤ 0.05)/Zr trilayer structures at temperatures from 4 to 295 K. The observed capacitance of structures with an amorphous As_xSe_1 − x (a-As_xSe_1 − x) thickness of ~ 0.4 to ~ 2.8 μm does not significantly change over the entire range of applied bias (− 5 V to 5 V), indicating that the a-As_xSe_1 − x films are fully depleted and thus the structures are Mott barriers. The current-voltage (I-V) characteristics of the a-As_0.03Se_0.97 device at low (< 3000 V/cm) to moderate fields (3000 V/cm-10000 V/cm) follow the predictions of trap limited space charge conduction theory, as they exhibit Ohmic behavior at low fields and trap limited space charge current at moderate fields. According to the trap limited space charge current model of Lampert, the a-As_0.03Se_0.97 film has an effective hole mobility, Θμ (with Θ < 1), of ~ 5 × 10^− 7 cm²/V-sec at 295 K. This value is similar to, but consistently lower than previously reported mobilities inferred from time of flight measurements. The current at high fields (> 10⁴ V/cm) increases rapidly with applied field as a result of carrier emission from localized states and is consistent with transport by the Poole-Frenkel mechanism. A permanent transition to a high conductance state (~ 10^− 3 S) is observed after exposure to very high electric fields (~ 4 × 10⁵V/cm).     

Thermal dissolution of Ag(Cu) in amorphous Ge(Sx Se1 − x)2 system

Thermally induced solid state reaction of Ag(Cu) into thin Ge(S_x Se_1 − x)₂ films with x = 0, 0.1, 0.4 and 1.0 was investigated using a step by step technique in order to design films with exact Ag(Cu) concentrations for applications in integrated IR optical devices. A thin film of Ag(Cu) was deposited on top of the host Ge(S_x Se_1 − x)₂ films followed by annealing in vacuum at constant temperature, which resulted in homogeneous films of good optical quality. The variation in Ag(Cu) concentration in the films ranged between 5 and 35 at.%. The kinetics of the diffusion and dissolution of metal in the host films was measured by optically monitoring the change in thickness of doped chalcogenide during consecutive thermal annealing steps. The kinetics studies revealed that the thermal dissolution rate of the Cu is greater than that of Ag. Optical UV-VIS transmission spectra of chalcogenide glass layers, undoped and thermal doped by Ag(Cu), were measured to establish the optical properties of the films. The spectra were analyzed using the technique proposed by Swanepoel and the results show that the addition of metal increases the absorption coefficient in the power-law regime and consequently the optical gap decreases and the refractive index increases. The amorphous character of the films was checked by X-ray diffraction which confirmed the amorphous structure of all Ag(Cu)GeSSe thin films.     

Spectral properties of PbO-P2O5 glasses

The optical absorption spectra of xPbO-(100 − x) P₂O₅ glasses where x = 5, 10, 15, 20, 25, and 30 is reported. The spectral absorption of these glasses was measured in the spectral range 300-900 nm at room temperature. Optical absorption spectra show that the absorption edge has a tail extending towards lower energies. The edge shifts nearly linearly towards higher energies with increasing PbO content. The degree of the edge shift was found to depend on the PbO content and is mostly related to the structural rearrangement and the relative concentrations of the glass basic units. The optical energy gap increases, from 2.55 to 3.05 eV by increasing PbO content from 5 to 30 mol%. The width of the localized states is decreased by increasing PbO content.     

Compositional dependence of the optical properties of amorphous Sb2Se3−xSx thin films

Thin films of Sb₂Se_3−xS_x solid solutions (x = 0, 1, 2, and 3) were deposited by thermal evaporation of presynthesized materials on glass substrates held at room temperature. The films compositions were confirmed by using energy dispersive analysis of X-rays (EDAX). X-ray diffraction studies revealed that all the as-deposited films as well as those annealed at T_a < 423 K have amorphous phase. The optical constants (n, k) and the thickness (t) of the films were determined from optical transmittance data, in the spectral range 500-2500 nm, using the Swanepoel method. The dispersion parameters were determined from the analysis of the refractive index. An analysis of the optical absorption spectra revealed an Urbach’s tail in the low absorption region, while in the high absorption region an indirect band gap characterizes the films with different compositions. It was found that the optical band gap energy increases quadratically as the S content increases.     

Local structural,magnetic, and optical properties of Zn1−xFexO thin films

High quality Zn_1−xFe_xO thin films were deposited on α-sapphire$\alpha \text{-sapphire}$ substrates by RF magnetron sputtering. X-ray absorption fine structure measurements showed that the chemical valence of Fe ions in the films was a mixture of 2+ and 3+ states, and Fe ions substituted mainly for the Zn sites in the films. DC-magnetization measurements revealed ferromagnetic properties from 5 to 300 K. The photoluminescence measurements at 15 K showed a sharp main transition peak at 3.35 eV along with a broad impurity peak at 2.45 eV. The structural and magnetization analyses of the Zn_1−xFe_xO films strongly suggested that the ferromagnetism was the intrinsic properties of the films.     

A sharp thermally reversing window in As45Te55−xIx chalcohalide glasses revealed by alternating differential scanning calorimetry and photo thermal deflection studies

The composition dependence of different thermal parameters such as glass transition temperature, non-reversing enthalpy, thermal diffusivity etc., of bulk As₄₅Te_55−xI_x chalcohalide glasses (3 ? x ? 10), has been evaluated using the temperature modulated Alternating Differential Scanning Calorimetry (ADSC) and Photo Thermal Deflection (PTD) studies. It is found that there is not much variation in the glass transition temperature of As₄₅Te_55−xI_x glasses, even though there is a wide variation in the average coordination number . This observation has been understood on the basis that the variation in glass transition temperature of network glasses is dictated by the variation in average bond energy rather than . Further, it is found that both the non-reversing enthalpy (ΔH_nr) and the thermal diffusivity (α) exhibit a sharp minimum at a composition x = 6. A broad hump is also seen in glass transition and crystallization temperatures in the composition range 5 ? x ? 7. The results obtained clearly indicate a sharp thermally reversing window in As₄₅Te_55−xI_x chalcohalide glasses around the composition x = 6.     

Composition dependence of photoconductivity of Al20AsxTe80−x glasses

The time dependent photocurrent of Al₂₀As_xTe_80−x glasses has been studied at low temperatures. It is found that the photocurrent of all the Al₂₀As_xTe_80−x samples studied does not decrease appreciably during illumination, which is consistent with the behavior of other narrow band gap amorphous chalcogenides. Further, the photosensitivity is found to be maximized for the composition x=25, which can be associated with rigidity percolation.     

Thermal diffusivity measurements on As-Te-Ga glasses by photo-thermal deflection technique: Composition dependence and topological thresholds

The thermal diffusivity (α) of As₂₀Te_80−xGa_x glasses (7.5 ? x ? 18.5) has been measured using photo-thermal deflection (PTD) technique. It is found that the thermal diffusivity is comparatively lower for As₂₀Te_80−xGa_x glasses, which is consistent with the memory type of electrical switching exhibited by these samples. Further, the thermal diffusivity of As₂₀Te_80−xGa_x glasses is found to increase with the incorporation of gallium initially (for x ? 9), which is consistent with the metallicity of the additive. This increase in α results in a maximum at the composition x = 9; beyond x = 9, a decrease is seen in α leading to a minimum at the composition x = 15. The observed composition dependence of thermal diffusivity of As₂₀Te_80−xGa_x glasses has been found to be similar to that of Al₂₀As_xTe_100−x glasses, based on which it is proposed that As₂₀Te_80−xGa_x glasses exhibit an extended stiffness transition with compositions x = 9 and x = 15 being its onset and completion, respectively. Also, the composition x = 17.5 at which a second maximum is seen in the thermal diffusivity has been identified to be the chemical threshold (CT) of the As₂₀Te_80−xGa_x glassy system, as at CT, the glass is configurationally closest to the crystalline state and the scattering of the diffusing thermal waves is minimal for the chemically ordered phase.     

Boron content dependance of magnetoimpedance in Fe91−xZr5BxNb4 alloys

A systematic investigation of the influence of B content on the magnetoimpedance (MI) effect in melt-spun Fe_91−xZr₅B_xNb₄ (FZBN, 0 ? x ? 30) ribbons has been performed within a frequency range, f ∼ 310-1110 kHz and under a varying dc magnetic field (H_dc) up to 70 Oe. The MI effect is not observed in the sample with x ? 5 but within the range 8 ? x ? 30. A distinct MI effect has been observed with a maximum change of 180% at around 1.1 MHz in the sample with x = 20, coincident with a saturation magnetic field of 66 Oe and a field sensitivity of about 7%/Oe. Magnetic measurements reveal that the MI effect and B content dependence of the effect are closely related to coercivity of the FZBN alloy series, except for the sample with 20 at.%. The drastic MI ratio observed in the sample with x = 20 is ascribed to its special microstructure. The mechanism of the MI effect in FZBN alloys and of the significant MI value appearing at a B content of x = 20 is discussed in this paper.     

The structure and optical properties of GeO2-GeS2 glasses

Oxy-chalcogenide glasses with compositions of xGeO₂-(100 − x)GeS₂, where 0 ? x ? 100 mol%, have been prepared and studied in terms of their structures and optical properties. X-ray fluorescence spectroscopy shows that Ge:S ratio can deviate from GeS₂ by ∼10 at.%, depending critically upon the preparation conditions. Raman scattering spectroscopy suggests that stoichiometric GeO₂-GeS₂ glasses have a heterogeneous structure in the scale of 1-100 nm. The optical gaps are nearly constant at 3.0-3.5 eV for glasses with 0 ? x ? 80 mol% and abruptly increase to ∼6 eV in GeO₂. This dependence suggests that the optical gap is governed by GeS₂ clusters, which are isolated and/or percolated. Composition-deviated glasses appear as orange and brown, and these glasses seem to have more inhomogeneous structures.     

Post-irradiation relaxation in vitreous arsenic/antimony trisulphides

Instability caused by high-energy γ-irradiation was studied in (As₂S₃)_1−x(Sb₂S₃)_x glasses (x = 0, 0.1, 0.2 and 0.3) using positron annihilation lifetime spectroscopy, the obtained results being treated within a two-state trapping model. The observed decrease in the positron trapping rate of the glasses tested just after irradiation was explained due to renovation of destroyed covalent chemical bonds. This process was governed by monomolecular relaxation kinetics agreed well with corresponding changes in fundamental optical absorption edge.     

Characterization of the optical properties of LPE InxGa1−xAsyP1−y thin layers grown on InP

A series of In_xGa_1?xAs_yP_1?y single-crystal thin layers have been grown on an InP substrate in a vertical liquid phase epitaxy furnace with a rotating slide boat system. The optical properties of these LPE quaternary alloys lattice-matched to InP have been investigated mainly by photoluminescence and electroreflectance measurements. Photoluminescence spectra of In_xGa_1?xAs_y P_1?y epitaxial layers are dominated by a strong luminescence line due to band-edge emission. At low temperatures, around 4.2 K, we have observed complicated luminescence bands with many fine structures. Electroreflectance spectra for the LPE In_xGa_1?xAs_yP_1?y layers are sufficiently broad to fulfil the low-field condition, and the analysis enabled us to determine precisely the band gap energy.     

Evaluation for photo-induced changes of photoluminescence and optical energy gap in amorphous Se100−xGex (x=5, 25 and 33) thin films

We have investigated photo-induced changes of photoluminescence (PL) and optical energy gap (E_OP) in amorphous Se_100−xGe_x (x=5, 25 and 33) thin films from illumination by HeCd laser light (hν=3.81 eV). The E_OP is obtained by a linear extrapolation of (αhν)^1/2 vs. hν to the energy axis. The optical absorption coefficient (α) is calculated from the extinction coefficient k measured in the wavelength range of 290-900 nm. Although the values of ΔE_OP are very different, all films exhibit a photo-induced photodarkening (PD) effect that is a red shift of E_OP. In particular, ΔE_OP in a-Se₇₅Ge₂₅ thin film exhibits the largest value (i.e., ΔE_OP∼40 meV for a-Se₉₅Ge₅, ΔE_OP∼200 meV for a-Se₇₅Ge₂₅, ΔE_OP∼130 meV for a-Se₆₇Ge₃₃). PL spectra in a-SeGe by hν_HeCd have no Stokes shift (SS). Although the PL intensity in the Se_100−xGe_x system is very small, the PL spectra (three-trial average) show a dependence on both composition and illumination time. The intensities of five band peaks (I₁-I₅) observed in the range of 1-2 eV increase with an increase of Ge content. The intensity of I₂ peak (the strongest intensity) increases with increasing illumination time, while the peak-energy position decreases. This is evidence of PD. A decrease in PL peak-energy position with Ge contents shows a similar tendency to that in E_OP. That is, the ΔE(I₂) is 25.2, 45.0 and 44.5 meV for a-Se₉₅Ge₅, a-Se₇₅Ge₂₅ and a-Se₆₇Ge₃₃, respectively. We propose in this paper a triple-well potential model that can universally explain the energy-induced phenomena in the a-SeGe, such as the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc.     

Insulator-like electrical transport in structurally ordered Al65Cu20+xRu15−x (x = 1.5, 1.0, 0.5, 0.0 and −0.5) icosahedral quasicrystals

Low-temperature resistivities, in zero-field and 8 T field, and magnetoresistance have been measured down to 1.4-300 K for stable icosahedral quasicrystals Al₆₅Cu_20+xRu_15−x (x = 1.5, 1.0, 0.5, 0.0 and −0.5). The analysis of the magnetoresistance data shows an overwhelming presence of anti weak-localization effect (τ_so ∼ 10⁻¹² s). But the sample with x = −0.5 shows anomalous magnetoresistance and the anti weak-localization effect breaks down (τ_so to be 10⁻¹⁵ s). The in-field σ-T between 5 K and 20 K, for x = 1.0, 0.5, 0.0 and −0.5 samples, and between 1.4 K and 40 K for x = 1.5 sample, follow a power-law behavior with an exponent of 0.5 and above ∼30 K the exponent ranges from 1.17 to 1.58. The observed power-laws basically characterize the presence of critical regime of the metal-insulator (MI) transition, dominated by electron-electron and electron-phonon inelastic scattering events respectively. In samples with x = 1.0, 0.5, 0.0 and −0.5 the in field σ-T has been found to follow ln σ-vs-T^1/4 below 5 K, which indicates the presence of variable range hopping. The observed transport features indicate the occurrence of proximity of metal-insulator transition in these Al-Cu-Ru quasicrystal samples.     

Combined in-situ SAXS/WAXS and HRTEM study on crystallization of (Cu60Co40)1 − xZrx metallic glasses

CuZr as well as CoZr are well known metallic glass-formers in a wide compositional range. Since the binary Cu-Co system exhibits a metastable liquid-liquid miscibility gap, i.e. Cu and Co tend to separate from each other, the ternary Cu-Co-Zr system is a promising candidate to form phase separated glass-glass composites. In this work (Cu₆₀Co₄₀)_1 − xZr_x metallic glasses with relatively low Zr contents of x = 37 and x = 32 were prepared by melt spinning and investigated by in-situ small-angle and wide-angle X-ray scattering (SAXS/WAXS) and differential scanning calorimetry (DSC). Certain heat treated samples were additionally investigated by high-resolution transmission electron microscopy (HRTEM). Even for x = 32 there are no indications for any kind of phase separation in the as-quenched state within experimental resolution, i.e. the critical temperature T_c for a liquid-liquid phase separation has already decreased from 1556 K for binary Cu₆₀Co₄₀ to a temperature below the glass transition temperature T_g = 762(5)K found for (Cu₆₀Co₄₀)₆₈Zr₃₂. Combined in-situ SAXS/WAXS and HRTEM investigations reveal that thermal annealing also does not induce an amorphous-amorphous phase separation. Instead the formation of nano crystallites of a so far unknown Cu-rich/Zr-poor phase with relatively low activation energy for crystallization E_a = 116(7) kJ/mol at temperatures far below the crystallization temperature deduced from DSC measurements is observed.     

Electron spin resonance and magnetic studies on CaO-SiO2-P2O5-Na2O-Fe2O3 glasses

Room temperature electron spin resonance (ESR) spectra and temperature dependent magnetic susceptibility measurements have been performed to investigate the effect of iron ions in 41CaO · (52 − x)SiO₂ · 4P₂O₅ · xFe₂O₃ · 3Na₂O (2 ? x ? 10 mol%) glasses. The ESR spectra of the glass exhibited the absorptions centered at g ≈ 2.1 and g ≈ 4.3. The variation of the intensity and linewidth of these absorption lines with composition has been interpreted in terms of variation in the concentration of the Fe²⁺ and Fe³⁺ in the glass and the interaction between the iron ions. The magnetic susceptibility data were used to obtain information on the relative concentration and interaction between the iron ions in the glass.     

The effect of composition on UV-vis-NIR spectra of iron doped glasses in the systems Na2O/MgO/SiO2 and Na2O/MgO/Al2O3/SiO2

Glasses with the compositions xNa₂O · 10MgO · (90 − x)SiO₂, 10Na₂O · xMgO · (90 − x)SiO₂, 5Na₂O · 15MgO · xAl₂O₃ · (80 − x)SiO₂, xNa₂O · 10MgO · 10Al₂O₃ · (80 − x)SiO₂, 10Na₂O · 10MgO · xAl₂O₃ · (80 − x)SiO₂, 10Na₂O · 5MgO · 10Al₂O₃ · (80 − x)SiO₂ were melted and studied using UV-vis-NIR spectroscopy in the wavenumber range from 5000 to 30 000 cm⁻¹. At [Al₂O₃] > [Na₂O], the UV-cut off is strongly shifted to smaller wavenumbers and the NIR peak at around 10 000 cm⁻¹ attributed to Fe²⁺ in sixfold coordination gets narrower. Furthermore, the intensity of the NIR peak at 5500 cm⁻¹ increases. This is explained by the incorporation of iron in the respective glass structures.     

SiOx films prepared using RF magnetron sputtering with a SiO target

In this study, SiO_x thin films were prepared using reactive radio frequency magnetron sputtering at room temperature with a SiO sintered target. The obtained SiO_x films were identified using X-ray diffraction, transmission electron microscopy, infrared absorption spectroscopy, X-ray photoelectron spectroscopy and ultraviolet-visible transmittance measurement. The x in SiO_x film was controlled from 0.98 to 1.70 by changing the oxygen flow ratio at deposition. Increasing the oxygen flow ratio increased the optical gap of the SiO_x films from 3.7 to greater than 6 eV.