Sol-gel preparation and optical properties of SiO2-Ta2O5 glass

Tantalum-doped silica glass was fabricated by the sol-gel process in order to obtain a glass with a high refractive index for optical use. A crack-free, clear glass rod was successfully prepared from a low-density gel and used as the core material for fabricating optical fibers. Transmission loss in the fabricated fibers was high, in the range of 10³-10⁴ dB/km, which may be caused by coloration due to the multivalency of tantalum; however, the loss was reduced by nearly one order of magnitude by heat treatment at 800 °C, that is, to 75 dB/km at a wavelength of 0.8 μm.     

Preparation and characterization of ZrO2-SiO2 binary films for planar optical waveguides

ZrO₂-SiO₂ binary films for active optical waveguides were prepared by the sol-gel method with zirconium oxychloride and tetraethoxysilane as precursors. The main factors that influence the film thickness and refractive index have been found. The relationship between the film refractive index composition and heat treatment temperature has been determined. The continuous tuning of the thickness and refractive index of the thin films has also been achieved, which will open up new possibilities in the development of active optical waveguides.     

Multinuclear NMR study of phosphosilicate gels derived from POCl3 and Si(OC2H5)4

Solid state ¹H, ²⁹Si and ³¹P MAS NMR have been used to investigate the microstructure of phosphosilicate gels prepared by a modified sol-gel method involving hydrolysis of silicon precursors in a solely aqueous environment at 50 °C. Gels with molar compositions 5, 10, 20 and 30 mol% P₂O₅ in P₂O₅-SiO₂ were studied. After drying to 400 °C the gels have very similar structures formed by a siloxane framework containing silanol groups and trapped molecules of orthophosphoric acid together with a very small amount, of pyrophosphoric acid. Unlike the gel samples previously synthesized by the hydrolysis of the silicon precursor in alcoholic solution at room temperature, the co-polymerization of phosphorus and silicon is much reduced. Although co-polymerization increases with phosphorus content, it still represents less than 50% of the phosphorus in the 30 mol% P₂O₅ gel. Furthermore there is no evidence for six-coordinated silicon in the glassy matrix.     

Structure and optical characterization of photochemically prepared ZrO2 thin films doped with erbium and europium

Zirconium oxide thin films loaded with 10, 30 and 50 mol% lanthanide ions (Er or Eu) have been successfully prepared by direct UV (254 nm) irradiation of amorphous films of β-diketonate complexes on Si(1 0 0) substrates, followed by a post annealing treatment process. The resultant films were characterized by X-ray photoelectron spectroscopy and Atomic Force Microscopy. The results showed that the stoichiometry of the resulting films were in relative agreement with the composition of the precursor films. The effects of annealing as well as the lanthanide ion loading on the photoluminescence (PL) emission intensity were investigated, finding that thermal treatment decreases surface roughness as well as PL emission intensity.     

Local structure of LuBO3 prepared via sol-gel process and its transformation with temperature: B-NMR and L-edge XAS studies

The present work deals with the temperature effect on the stability range of LuBO₃ prepared by sol-gel synthesis. Structural modifications from vaterite to calcite form versus the thermal treatments have been measured by X-ray diffraction and infrared spectroscopy. Several samples derived from the xerogel annealed at 400, 800 and 1200 °C were studied by ¹¹B solid state NMR and at the lutetium L_I-L_III edges by X-ray absorption spectroscopy to determine the local atomic arrangement around the rare earth and the boron ions. The predominance of BO₄ groups and the eightfold coordination of lutetium atoms in the LuBO₃ xerogel in samples treated up to 800 °C indicate an evolution of the xerogel to vaterite form after thermal treatment instead of the expected calcite form as established for samples prepared by solid state reaction.     

X-ray absorption and Raman characterizations of TeO2-Ga2O3 glasses

The thermodynamic properties of transparent glasses prepared in the TeO₂-Ga₂O₃ system were investigated by differential scanning calorimetry. The change of the thermal parameters as a function of the chemical composition is discussed. Raman and both Te L_III and Ga K edge X-ray absorption spectroscopies at room temperature were used to examine the short range order. Analyses of the spectra suggest that the addition of Ga₂O₃ content to the TeO₂ glass matrix induces the transformation of trigonal bipyramids (TeO₄E, E=lone electronic pair 5s² of Te) to trigonal pyramids (TeO₃E) with formation of Te-O-Ga bridging bonds. Furthermore, Ga K edge XANES and EXAFS studies show that Ga atoms exhibit both tetrahedral (GaO₄) and octahedral (GaO₆) environments.     

Defect-induced luminescence in Co(II)-doped anatase TiO2 prepared by the sol-gel method

The defect luminescence properties of titania sol-gel materials doped with Co²⁺ ions are reported. The laser irradiation of Co-doped titania samples produces a fluorescence, which is reduced as the continuous irradiation time is increased. The fluorescence decay depends on irradiation time as a double exponential function; the characteristic times involved for the luminescence quenching are in the range of seconds. We have associated the suppression of luminescence to the effect of the local heating produced by the laser beam on the reduction of physical defects such as grain boundaries, surface states and chemical defects originating from oxygen vacancies.     

Structural investigations of copper doped B2O3-Bi2O3 glasses with high bismuth oxide content

Raman and infrared spectroscopy have been employed to investigate the 99.5%[xB₂O₃(1−x)Bi₂O₃]0.5%CuO glasses with different Bi/B nominal ratios (0.07?x?0.625) in order to obtain information about the competitive role of B₂O₃ and Bi₂O₃ in the formation of the glass network. The glass samples have been prepared by melting at 1100 °C and rapidly cooling at room temperature. In order to relax the structure, to improve the local order and to develop crystalline phases the glass samples were kept at 575 °C for 10 h. The influence of both Bi₂O₃ and CuO on the vitreous B₂O₃ network as well as the local order changes around bismuth and boron atoms in as prepared and heat treated samples was studied. Structural modifications occurring in heat treated samples compared to the untreated glasses have been observed.     

Structural and physical properties of a novel TeO2-BaO-SrO-Ta2O5 glass system for photonic device applications

A detailed study on a novel TeO₂-BaO-SrO-Ta₂O₅ glass system developed for photonic device applications is reported in this paper. The glass transition and crystallization temperatures could be selected by varying the Ta₂O₅ content in this glass system. This glass system is found to have good thermal stability among tellurite glasses. Raman spectroscopy has been used as a tool to analyze the structural details of this technologically important glass system. In addition to the TeO₄ trigonal bipyramid and TeO₃ trigonal pyramid structural units, glasses in this system revealed the presence of an additional Raman band attributed to TaO₆ octahedra. The Raman bandwidth of the present glasses are broader compared to the conventional tellurite glasses by 35%. The influence of a gradual addition of the modifier oxides on the coordination geometry of tellurium atoms has been elucidated. Unlike the other tellurite glasses, even at higher modifier concentrations the TeO₄ structural units dominate in the glass network compared to TeO₃ trigonal pyramids. The ratio of TeO₄/TeO₃ structural units was discussed for different series of glass compositions.     

Cathodoluminescence of Ge, Si, and O implanted SiO2 layers and the role of mobile oxygen in defect transformations

Thermally grown SiO₂ layers of thickness d=500 nm have been implanted by Ge⁺, Si⁺, and O⁺ ions of energy 350, 150, and 100 keV, respectively, and a uniform implantation dose of D_i=5×10¹⁶ ions/cm². Thus the implantation profiles are expected with a concentration maximum of nearly 4 at.% at the half-depth d_m≅250 nm of the SiO₂ layers. After thermal annealing to 900 °C for 1 h in dry nitrogen or vacuum the typical violet luminescence band (λ=400 nm) of the Ge⁺ implanted centers is increased more than 200-fold and the Ge luminescent center depth profile is shifted from about 250 to 170 nm towards the surface as determined by cathodoluminescence (CL) depth profiling. Implanting oxygen increases the red band (λ=650 nm) but does not affect the blue band (λ=460 nm). Silicon surplus increases the amplitude of the blue (B) luminescence, but reduces the amplitude of the red (R) one. Studying the irradiation dose dependence of these blue and red bands we have established defect kinetics in SiO₂ including six main defects and precursors, including the non-bridging oxygen hole center for the red luminescence, the twofold-coordinated silicon as the oxygen deficient center ODC(2) for the blue luminescence and the mobile oxygen as the main transmitter between precursors and the radiation induced defects. The kinetics are described by a set of eight differential equations which predict the dose dependence of the CL.     

Characterisation of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties

Al₂O₃ and ZrO₂ mixtures for gate dielectrics have been investigated as replacements for silicon dioxide aiming to reduce the gate leakage current and reliability in future CMOS devices. Al₂O₃ and ZrO₂ films were deposited by atomic layer chemical vapor deposition (ALCVD) on HF dipped silicon wafers. The growth behavior has been characterized structurally and electrically. ALCVD growth of ZrO₂ on a hydrogen terminated silicon surface yields films with deteriorated electrical properties due to the uncontrolled formation of interfacial oxide while decent interfaces are obtained in the case of Al₂O₃. Another concern with respect to reliability aspects is the relatively low crystallization temperature of amorphous high-k materials deposited by ALCVD. In order to maintain the amorphous structure at high temperatures needed for dopant activation in the source drain regions of CMOS devices, binary Al/Zr compounds and laminated stacks of thin Al₂O₃ and ZrO₂ films were deposited. X-ray diffraction and transmission electron microscope analysis show that the crystallization temperature can be increased dramatically by using a mixed oxide approach. Electrical characterization shows orders of leakage current reduction at 1.1-1.7 nm of equivalent oxide thickness. The permittivity of the deposited films is determined by combining quantum mechanically corrected capacitance voltage measurements with structural analysis by transmission electron microscope, X-ray reflectivity, Rutherford backscattering, X-ray photoelectron spectroscopy, and inductively coupled plasma optical emission spectroscopy. The k-values are discussed with respect to formation of interfacial oxide and possible silicate formation.     

Effect of Y2O3 addition on the phase transition and growth of YSZ nanocrystallites prepared by a sol-gel process

The effect of Y₂O₃ addition on the phase transition and growth of yttria-stabilized zirconia (YSZ) nanocrystallites prepared by a sol-gel process with various mixtures of ZrOCl₂ · 8H₂O and Y(NO₃)₃ · 6H₂O ethanol-water solutions at low temperatures has been studied. DTA/TGA, XRD, SEM, TEM and ED have been utilized to characterize the YSZ nanocrystallites. The crystallization temperature of 3YSZ, in which Y₂O₃/(Y₂O₃ + ZrO₂) = 0.03, gel powders estimated by DTA/TG is about 427 °C. When 3YSZ and 5YSZ gels are calcined at 500-700 °C, their crystal structures as composed of coexisting tetragonal and monoclinic ZrO₂, and tetragonal phase decreases with calcination temperature increasing from 500 to 700 °C. Pure cubic ZrO₂ is obtained when added Y₂O₃ is greater than 8 mol%. A nanocrystallite size distribution between 10 and 20 nm is obtained in TEM observations.     

Formation and characterization of tin oxide aerogel derived from sol-gel process based on Tetra(n-butoxy)tin(IV)

Transparent and translucent SnO₂ aerogels with high specific surface area (>300 m²/g) have been prepared by sol-gel process using tetra(n-butoxy)tin(IV) as a starting compound, and supercritical drying technique for solvent extraction. Light scattering measurements reveal that the polymeric cluster size distribution in sol system is gradually broadened during sol-gel transition. SEM images show that the aerogels are made up of the cottonlike oxide agglomerates with a large number of pores. TEM images show that these aerogels seem to be self-similar at different magnifications. Their pore size distribution is pretty wide ranging from mesopore to macropore especially for that of translucent aerogel.     

Structural investigation of SnO-B2O3 glasses by solid-state NMR and X-ray photoelectron spectroscopy

Local structure of the SnO-B₂O₃ glasses was investigated using several spectroscopic techniques. ¹¹B MAS-NMR spectra suggested that BO₄ tetrahedral units maximized at around the composition with 50 mol% SnO. The BO₄ units were still present at compositions with high SnO content (67 mol% SnO), suggesting that SnO acted not only as a network modifier but also as a network former. O1s photoelectron spectra revealed that the addition of small amounts of SnO formed non-bridging oxygens (NBO) (B-O?Sn) and the amounts of NBO increased with an increase in SnO content. ¹¹⁹Sn Mössbauer spectra indicated that Sn was present only as Sn(II) in the glasses. The structure of the SnO-B₂O₃ glasses was compared with that of conventional alkali borate glasses and lead borate glasses. The thermal and viscous properties of these glasses were discussed on the basis of the glass structure revealed in the present study.     

Microstructure and optical properties of (Pb,Ca)TiO3 films grown on Si(1 0 0) substrates by a simple sol-gel process

Amorphous and polycrystalline (Pb_0.76Ca_0.24)TiO₃ (PCT) thin films deposited on an Si(1 0 0) substrate have been prepared by a simple sol-gel process. The microstructure and surface morphologies of the thin films have been studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The polycrystalline PCT film on the Si(1 0 0) substrate has a tetragonal perovskite structure with grain size from 60 to 110 nm. AFM reveals smooth surfaces and root mean square (rms) roughness of 0.17 and 4.4 nm for amorphous and polycrystalline films, respectively. The refractive index n and extinction coefficient k of the amorphous and polycrystalline thin films was obtained by spectroscopic ellipsometry as a function of the photon energy in the range from 2.0 to 5.4 eV. The maximum n and direct bandgap energies of amorphous and polycrystalline thin films were 2.66 and 4.11 eV, 2.64 and 3.84 eV, respectively.     

Synthesis of Y2O3:Eu phosphors by bicontinuous cubic phase process

A novel approach for preparation of red-emitting europium-doped yttrium oxide phosphor (Y₂O₃:Eu) by using the bicontinuous cubic phase (BCP) process was reported in this paper. The BCP system was composed of anionic surfactant sodium bis(2-ethylhexyl)sulfosuccinate (AOT) and aqueous yttrium nitrate/europium nitrate solution. Energy dispersive spectrometer analysis revealed the homogeneous precipitation occurred in the BCP structure. Thermogravimetric analysis measurements indicated the precursor powder was europium-doped yttrium hydroxide, Y_1−xEu_x(OH)₃. Scanning electron microscopy micrographs showed the precursor powder had a primary size about 30 nm and narrow size distribution. After heat treatment in furnace above 700 °C for 4 h, high crystallinity Y₂O₃:Eu phosphors was obtained. However, the primary size of particles grew to 50–200 nm and the dense agglomerates with a size below 1 μm were formed. X-ray diffraction patterns indicated the crystal structure of precursor powders and Y₂O₃:Eu phosphors were amorphous and body-centered cubic structure, respectively. The photoluminescence analysis showed that the obtained Y₂O₃:Eu phosphor had a strong red emitting at 612 nm and the quenching started at a Eu concentration of 10 mol%. This study indicated that the BCP process could be used to prepare the highly efficient oxide-based phosphors.     

The coordination state and valence state of selected transition metal ions in SiO2-B2O3 xerogels

A series of SiO₂-B₂O₃ xerogels with changing SiO₂/B₂O₃ mol% and doped with selected transition metal ions was prepared. These mixed oxide materials contained copper, nickel, cobalt, manganese, chromium and vanadium ions coordinated to oxygen donor atoms in water and OH groups. Extensive studies of the transition metal complexes in the xerogels by such spectral techniques as diffuse reflectance (UV-vis), electron paramagnetic resonance and fluorescence spectroscopies show that there exist Cu(II) in the coordination environment of D_4h symmetry, Ni(II) in octahedral coordination sphere, Co(II) in both tetrahedral and octahedral environments, Mn(II) preferably in the O_h coordination and Mn(III) in pseudo-octahedral sphere; then octahedrally coordinated Cr(III) ions occur in coupled pairs or clusters and V(IV) as VO²⁺ ions exist in distorted (C_4v) octahedral surrounding.