Atomic layer deposition of Al2O3, ZrO2, Ta2O5, and Nb2O5 based nanolayered dielectrics

Ta₂O₅, Ta-Nb-O, Zr-Al-Nb-O, and Zr-Al-O mixture films or solid solutions were grown on Si(1 0 0) substrates at 300 °C by atomic layer deposition. The equivalent oxide thickness of Ta₂O₅ based capacitors was between 1 and 3 nm. In Zr-Al-O films, the high permittivity of ZrO₂ was combined with high resistivity of Al₂O₃ layers. The permittivity, surface roughness and interface charge density increased with the Zr content and the equivalent oxide thickness was between 2.0 and 2.5 nm. In the Zr-Al-Nb-O films the equivalent oxide thickness remained at 1.8-2.0 nm.     

Growth and characterization of epitaxial Fe0.8Ga0.2/0.69PMN-0.31PT heterostructures

Fe_0.8Ga_0.2 films were deposited on bulk single-crystal (0 0 1) 0.69PMN-0.31PT substrates by DC magnetron sputtering to make magnetoelectric bilayer composites. Films deposited at temperatures below 600 °C were X-ray amorphous. Films deposited at temperatures of 600 °C and higher exhibited a single-crystal (0 0 1) disordered BCC structure. The crystalline FeGa films demonstrate a 45° twisted cube-on-cube epitaxial relationship with the PMN–PT substrates. Heterostructures with an X-ray amorphous FeGa film exhibited zero magnetoelectric response. Heterostructures with a 990 nm epitaxial FeGa film exhibited a large inverse magnetoelectric voltage coefficient of 13.4 (G cm)/V.     

Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3

Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga₂O₃ powder to GaN under an NH₃/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga₂O₃ starts at ∼650 °C, followed by decomposition of GaN at ∼1100 °C. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 800–1000 °C. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga₂O₃ crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga₂O₃ by NH₃ whereby nitridation of β-Ga₂O₃ proceeds via the intermediate vapor species Ga₂O(g).     

Distorted icosahedral Ni5Nb3Zr5 clusters in the as-quenched and hydrogenated amorphous (Ni0.6Nb0.4)0.65Zr0.35 alloys

Local structures of the hydrogenated (Ni_0.6Nb_0.4)_1-xZr_x (x = 0.3-0.4) amorphous alloys attract much attention for the sake of their epoch-making electronic transport behaviors. We investigated the local structures by XAFS for the as-quenched (Ni_0.6Nb_0.4)_0.65Zr_0.35 and hydrogenated [(Ni_0.6Nb_0.4)_0.65Zr_0.35]_0.922H_0.078 amorphous alloys, in which ballistic conductivity has been observed. XAFS results of the Ni K-edge are analyzed based on the structure model deduced by the first principle calculation. The analysis suggests that highly distorted icosahedral Ni₅Nb₃Zr₅ cluster, which has a centered-Ni and a surrounding Nb triangle, is a main structural unit of (Ni_0.6Nb_0.4)_0.65Zr_0.35 and the [(Ni_0.6Nb_0.4)_0.65Zr_0.35]_0.922H_0.078 amorphous alloys. This distorted icosahedral Ni₅Nb₃Zr₅ cluster can be associated with the occurrence of the singular electronic transport behaviors of the hydrogenated (Ni_0.6Nb_0.4)_0.65Zr_0.35 alloy.     

Devitrification behavior and structure of Li2O-B2O3-Al2O3 composite gels from metal alkoxides

(30 − x/2)Li₂O·(70 − x/2)B₂O₃·xAl₂O₃(x = 0, 5 and 10) composite gels have been fabricated by the sol-gel method. LiOCH₃, B(OC₄H₉)₃, and Al(OC₄H₉)₃ were used as precursor for Li₂O, B₂O₃, and Al₂O₃, respectively. B(OC₄H₉)₃ and Al(OC₄H₉)₃ were hydrolyzed separately and then mixed. The crystallization behavior and structure of the gels upon thermal treatment temperatures between 150 and 550 °C are characterized on the basis of SEM, XRD and IR analyses. Xerogel with x = 0 exhibits non-crystal features, whereas crystalline phases are found in the xerogels with x = 5 and 10. The crystalline phases are not found with increasing heat treatment temperatures from 150 to 450 °C, but crystalline phases appear present at 550 °C. The xerogel with x = 0, subject to thermal treatment below 450 °C, is found to be still amorphous, and a 550 °C heat treatment leads its structure changing from glassy to crystalline.     

Structure and growth morphology of Gd2O3-doped CeO2 thin films

Gd₂O₃-doped CeO₂ (Gd_0.1Ce_0.9O_1.95, GDC) thin films were synthesized on (1 0 0) Si single crystal substrates by a reactive radio frequency magnetron sputtering technique. Structures and surface morphologies were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and one-dimensional power spectral density (1DPSD) analysis. The XRD patterns indicated that, in the temperature range of 200–700 °C, f.c.c. structured GDC thin films were formed with growth orientations varying with temperature—random growth at 200 °C, (2 2 0) textures at 300–600 °C and (1 1 1) texture at 700 °C. GDC film synthesized at 200 °C had the smoothest surface with roughness of R_rms=0.973 nm. Its 1DPSD plot was characterized with a constant part at the low frequencies and a part at the high frequencies that could be fitted by the f^−2.4 power law decay. Such surface feature and scaling behavior were probably caused by the high deposition rate and random growth in the GDC film at this temperature. At higher temperatures (300–700 °C), however, an intermediate frequency slope (−γ₂≈−2) appeared in the 1DPSD plots between the low frequency constant part and the high frequency part fitted by f⁻⁴ power law decay, which indicated a roughing mechanism dominated by crystallographic orientation growth that caused much rougher surfaces in GDC films (R_rms>4 nm).     

Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

The atomic layer chemical vapor deposition (ALCVD) deposited Al₂O₃ and ZrO₂ films were investigated by ex situ X-ray photoelectron spectroscopy. The thickness dependence of band gap and valence band alignment was determined for these two dielectric layers. For layers thicker than 0.9 nm (Al₂O₃) or 0.6 nm (ZrO₂), the band gaps of the Al₂O₃ and ZrO₂ films deposited by ALCVD are 6.7±0.2 and 5.6±0.2 eV, respectively. The valence band offsets at the Al₂O₃/Si and ZrO₂/Si interface are determined to be 2.9±0.2 and 2.5±0.2 eV, respectively. Finally, the escape depths of Al 2p in Al₂O₃ and Zr 3p3 in ZrO₂ are 2.7 and 2.0 nm, respectively.     

Characterization of chemosynthetic Al2O3-2SiO2 geopolymers

Pure chemosynthetic Al₂O₃-2SiO₂ geoploymers displaying positive alkali-activated polymerization properties and high compressive strength at room temperature were effectively fabricated utilizing a sol-gel method. The molecular structure of the precursor powder and resulting geopolymers were investigated by X-ray diffraction (XRD) and nuclear magnetic resonance (NMR) analysis. In addition, the mechanical and alkali-activated polymerization properties of these materials were also studied. NMR data revealed that the chemosynthetic powders began to contain 5-coordinated Al atoms when the calcination temperatures exceeded 200 °C. These calcined powders were capable of reacting with sodium silicate solutions at calcination temperatures exceeding 300 °C, which is, however, much lower than the temperature required to convert kaolin to Metakaolin.     

Potentiodynamic polarization studies on amorphous Zr46.75Ti8.25Cu7.5Ni10Be27.5, Zr65Cu17.5Ni10Al7.5, Zr67Ni33 and Ti60Ni40 in aqueous HNO3 solutions

Potentiodynamic polarization studies were carried out on virgin specimens of Zr-based bulk amorphous alloys Zr_46.75Ti_8.25Cu_7.5Ni₁₀Be_27.5 and Zr₆₅Cu_17.5Ni₁₀Al_7.5, and conventional-type binary amorphous alloys Zr₆₇Ni₃₃ and Ti₆₀Ni₄₀ in solutions of 0.2 M, 0.5 M and 1.0 M HNO₃ at room temperature. The values of the corrosion current density (I_corr) for the bulk amorphous alloy Zr_46.75Ti_8.25Cu_7.5Ni₁₀Be_27.5 were found to be comparable with those of Zr₆₅Cu_17.5Ni₁₀Al_7.5 in 0.2 M and 0.5 M HNO₃, but the value of I_corr for the former was almost three times more than that of the latter in 1.0 M HNO₃. In the case of conventional binary amorphous alloys, Ti₆₀Ni₄₀ showed lower value of I_corr as compared to Zr₆₇Ni₃₃ in 0.5 M and 1.0 M HNO₃ and a comparable value of I_corr in 0.2 M HNO₃. In general, the binary Ti₆₀Ni₄₀ displayed the best corrosion resistance among all the alloys in all the cases and the corrosion current density (I_corr) for all the alloys was found to increase with the increasing concentration of nitric acid. It is noticed that the bulk amorphous alloys do not possess superior corrosion resistance as compared to conventional binary amorphous alloys in aqueous HNO₃ solutions. The observed differences in their corrosion behavior are attributed to different alloy constituents and composition of the alloys investigated.     

Crystallization kinetics of the Zr61Al7.5Cu17.5Ni10Si4 alloy using isothermal DSC and TEM observation

The crystallization behavior and microstructure development of the Zr₆₁Al_7.5Cu_17.5Ni₁₀Si₄ alloy during annealing were investigated by isothermal differential scanning calorimetry, X-ray diffractometry and transmission electron microscopy. During isothermal annealing of the Zr₆₁Al_7.5Cu_17.5Ni₁₀Si₄ alloy at 703 K, Zr₂Cu crystals with an average size of about 5 nm were first observed during the early stages (30% crystallization) of crystallization by TEM. The Zr₂Cu crystal size increased with annealing time and attained an average size of 20 nm corresponding to the stage of 80% crystallization. In addition, the change in particle size with increasing annealing time exhibited a linear relationship between grain growth time and the cube of the particle size for the Zr₂Cu type crystalline phase. This indicates that the crystal growth of the Zr₆₁Al_7.5Cu_17.5Ni₁₀Si₄ alloy belongs to a thermal activated process of the Arrhenius type. The activation energy for the grain growth of Zr₂Cu is 155 ± 20 kJ/mol in the Zr₆₁Al_7.5Cu_17.5Ni₁₀Si₄ amorphous alloy. The lower activation energy for grain growth in compared to that for crystallization in Zr₆₅Cu₃₅ 440 kJ/mol crystal corresponds to the rearrangement of smaller atoms in the metallic glass, Al or Si (compare to Zr).     

Microstructure and dielectric properties of La2O3 films prepared by ion beam assistant electron-beam evaporation

Ultrathin La₂O₃ gate dielectric films were prepared on Si substrate by ion assistant electron-beam evaporation. The growth processing, interfacial structure and electrical properties were investigated by various techniques. From XRD results, we found that the La₂O₃ films maintained the amorphous state up to a high annealing temperature of 900 °C for 5 min. From XPS results, we also discovered that the La atoms of the La₂O₃ films did not react with silicon substrate to form any La-compound at the interfacial layer. However, a SiO₂ interfacial layer was formed by the diffusion of O atoms of the La₂O₃ films to the silicon substrate. From the atomic force microscopy image, we disclosed that the surface of the amorphous La₂O₃ film was very flat. Moreover, the La₂O₃ film showed a dielectric constant of 15.5 at 1 MHz, and the leakage current density of the La₂O₃ film was 7.56 × 10⁻⁶ A/cm² at a gate bias voltage of 1 V.     

Sodium tracer diffusion in glasses of the type (Na2O)0.2[(BO1.5)x(SiO2)1 − x]0.8

Sodium tracer diffusion coefficients, D_Na*, have been measured in sodium borosilicate glasses of the type (Na₂O)_0.2[(BO_1.5)_x(SiO₂)_1 − x]_0.8 as a function of temperature and the composition parameter x. In these glasses, which can alternatively also be described by using the formula Na₂O·(2B₂O₃)_x·(4SiO₂)_1 − x, one network former unit, SiO₂, is replaced by another one, BO_1.5, while keeping the sodium concentration constant. At constant temperature, the tracer diffusion coefficient of sodium as a function of x has a shallow minimum at about x = 0.7. At temperatures below about 310 °C the temperature dependences of the measured tracer diffusion coefficients are of Arrhenius-type; at higher temperatures one observes an increase in the temperature dependence with increasing temperature. The activation energy derived from sodium tracer diffusion data for temperatures up to about 310 °C increases about linearly with increasing x from about 70 to 80 kJ/mol. The pre-exponential factor as a function of x varies by about one order of magnitude and has a minimum at about x = 0.4. Values derived for the Haven-ratio are smaller than one and show a shallow minimum as a function of x at around x = 0.75. Furthermore, it was investigated whether there is a significant, directly measurable uptake of water during annealing in moist atmospheres and whether water taken up from moist atmospheres can influence the diffusion of sodium.     

Crystallization and dielectric properties of low temperature dielectrics containing Li2O filler

Crystallization and dielectric properties of typical low temperature co-fired ceramics (LTCC) consisting of calcium zinc aluminoborosilicate glass and Al₂O₃ filler were investigated by substituting the Al₂O₃ filler partially with Li₂O at the levels of 2-10 wt%. Depending on the content of Li₂O, densification was found significantly affected by early crystallization that resulted from the formation of unexpected crystalline phases including LiAlSiO₄, Ca₂SiO₄, LiAlO₂, and LiAlSi₃O₈. The effect of hindering sintering via earlier crystallization became enormous regardless of firing temperature when >5 wt% Li₂O substitution occurred. It was observed that the substitution of 2 wt% Li₂O for Al₂O₃ was beneficial in producing promising performance at the low temperature of 750 °C, which can be highlighted with k ∼ 8.7 and tan δ ∼ 0.009 at 1 MHz.     

Effect of Y2O3 addition on the phase transition and growth of YSZ nanocrystallites prepared by a sol-gel process

The effect of Y₂O₃ addition on the phase transition and growth of yttria-stabilized zirconia (YSZ) nanocrystallites prepared by a sol-gel process with various mixtures of ZrOCl₂ · 8H₂O and Y(NO₃)₃ · 6H₂O ethanol-water solutions at low temperatures has been studied. DTA/TGA, XRD, SEM, TEM and ED have been utilized to characterize the YSZ nanocrystallites. The crystallization temperature of 3YSZ, in which Y₂O₃/(Y₂O₃ + ZrO₂) = 0.03, gel powders estimated by DTA/TG is about 427 °C. When 3YSZ and 5YSZ gels are calcined at 500-700 °C, their crystal structures as composed of coexisting tetragonal and monoclinic ZrO₂, and tetragonal phase decreases with calcination temperature increasing from 500 to 700 °C. Pure cubic ZrO₂ is obtained when added Y₂O₃ is greater than 8 mol%. A nanocrystallite size distribution between 10 and 20 nm is obtained in TEM observations.     

Preparation, phase transformation and microstructure of ZrxTi1−xO2 (x = 0.1-0.9) fine fibers

Zr_xTi_1−xO₂ (x = 0.1-0.9) fibers were prepared by the sol-gel dry-spinning method. Polyacetylacetonatozirconium (PAZ) and tetrabutyl titanate (C₁₆H₃₆O₄Ti) were used as raw materials. The green fibers were obtained from the amorphous spinnable solution and then heat-treated to convert into polycrystalline fibers. The main phase changes from TiO₂ to zirconium titanate (ZT) and then tetragonal ZrO₂ with increasing ZrO₂ content. The crystallization temperature varied with the molar ratio of Zr:Ti. The heat-treated fibers at 1050 °C have few pores and no cracks with diameters of 10-20μm and lengths of 1-5 cm.     

Optimizing the growth of CoSi2 film with oxide-mediated CoSi2 template by silicon cap layer

Applying both template and Si cap technology, we achieved the epitaxial growth of CoSi₂ directly on Si(1 0 0) substrate by rapid thermal annealing (RTA). The crystal quality of CoSi₂ film is found to be significantly dependent on the Si cap thickness. In our work, a good-quality CoSi₂ film with a minimum of χ_min~11.6% and 3.3 Ω/square was obtained as a 15 nm Co with a subsequent 15 nm Si cap layer is deposited on an oxide-mediated CoSi₂ template and followed by an anneal at 1050 °C under N₂ protection; whereas too thin or thick Si cap layer will deteriorate the crystalline quality of CoSi₂. These experimental results are discussed in combination with the simulation of Rutherford backscattering spectroscopy and X-ray reflectivity.     

Preparation and characterization of ZnO-TiO2 films obtained by sol-gel method

The sol-gel route has been applied to obtain ZnO-TiO₂ thin films. For comparison, pure TiO₂ and ZnO films are also prepared from the corresponding solutions. The films are deposited by a spin-coated method on silicon and glass substrates. Their structural and vibrational properties have been studied as a function of the annealing temperatures (400-750 °C). Pure ZnO films crystallize in a wurtzite modification at a relatively low temperature of 400 °C, whereas the mixed oxide films show predominantly amorphous structure at this temperature. XRD analysis shows that by increasing the annealing temperatures, the sol-gel Zn/Ti oxide films reveal a certain degree of crystallization and their structures are found to be mixtures of wurtzite ZnO, Zn₂TiO₄, anatase TiO₂ and amorphous fraction. The XRD analysis presumes that Zn₂TiO₄ becomes a favored phase at the highest annealing temperature of 750 °C. The obtained thin films are uniform with no visual defects. The optical properties of ZnO-TiO₂ films have been compared with those of single component films (ZnO and TiO₂). The mixed oxide films present a high transparency with a slight decrease by increasing the annealing temperature.     

The effect of alumina on the Sn/Sn redox equilibrium and the incorporation of tin in Na2O/Al2O3/SiO2 melts

Glasses with the basic compositions 10Na₂O · 10CaO · xAl₂O₃ · (80 − x)SiO₂ (x=0, 5, 15, 25) and 16Na₂O · 10CaO · xAl₂O₃ · (74 − x)SiO₂ (x=0, 5, 10, 15, 20) doped with 0.25-0.5 mol% SnO₂ were studied using square-wave-voltammetry at temperatures in the range from 1000 to 1600 °C. The voltammograms exhibit a maximum which increases linearly with increasing temperature. With increasing alumina concentration and decreasing Na₂O concentration the peak potentials get more negative. Mössbauer spectra showed two signals attributed to Sn²⁺ and Sn⁴⁺. Increasing alumina concentrations did not affect the isomer shift of Sn²⁺; however, they led to increasing quadrupole splitting, while in the case of Sn⁴⁺ both isomer shift and quadrupole splitting increased. A structural model is proposed which explains the effect of the composition on both the peak potentials and the Mössbauer parameters.     

Growth and characterization of c-plane AlGaN on γ-LiAlO2

This study demonstrates a pure c-plane AlGaN epilayer grown on a γ-LiAlO₂ (1 0 0) (LAO) substrate with an AlN nucleation layer grown at a relatively low temperature (LT-AlN) by metal-organic chemical vapor deposition (MOCVD). The AlGaN film forms polycrystalline film with m- and c-plane when the nucleation layer grows at a temperature ranging from 660 to 680 °C. However, a pure c-plane AlGaN film with an Al content of approximately 20% can be obtained by increasing the LT-AlN nucleation layer growth temperature to 700 °C. This is because the nuclei density of AlN increases as the growth temperature increases, and a higher nuclei density of AlN deposited on LAO substrate helps prevent the deposition of m-plane AlGaN. Therefore, high-quality and crack-free AlGaN films can be obtained with a (0 0 0 2) ω-rocking curve FWHM of 547 arcsec and surface roughness of 0.79 nm (root-mean-square) using a 700-°C-grown LT-AlN nucleation layer.     

Effect of the annealing process on the microstructure of La2Zr2O7 thin layers epitaxially grown on LaAlO3 by metalorganic decomposition

La₂Zr₂O₇ (LZO) films have been grown by metalorganic decomposition (MOD) to be used as buffer layers for coated conductors. A characteristic feature of LZO thin films deposited by MOD is the formation of nanovoids in an almost single crystal structure of LZO pyrochlore phase. Annealing parameters (heating ramp, temperature, pressure, etc.) were varied to establish their influence on the microstructure of the LZO layers. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used for sample characterization. The epitaxial pyrochlore phase was obtained for annealing temperatures higher than 850 °C whatever the other annealing conditions. However, the film microstructure, in particular, nanovoids shape and size, is strongly dependent on heating ramp and pressure during annealing. When using low heating ramp, percolation of voids creates diffusion channels for oxygen which are detrimental for the substrate protection during coated conductor fabrication. From this point of view high heating rates are more adapted to the growth of LZO layers.