纤锌矿CdxZn1-xO电子结构的第一性原理研究

采用第一性原理的平面波超软赝势方法,计算了纤锌矿ZnO及不同量Cd掺杂ZnO的电子结构.计算结果表明,Cd的掺杂导致ZnO晶体的禁带宽度变窄.主要原因在于Cd的掺入导致Zn4s轨道中能级越来越低的电子参与作用,使得决定导带底的反键Zn 4s态能级逐渐降低,同时由pd反键轨道控制的价带顶能级逐渐升高. 关键词： 密度泛函理论 超软赝势方法 Cd掺杂ZnO     

Size-dependent nonlinear absorption and refraction of Ag nanoparticles excited by femtosecond lasers

Silver (Ag) nanoparticles with different average sizes are prepared, and the nonlinear absorption and refraction of these nanoparticles are investigated with femtosecond laser pulses at 800 nm. The smallest Ag nanoparticles show insignificant nonlinear absorption, whereas the larger ones show saturable absorption. By considering the previously reported positive nonlinear absorption of 9 nm Ag nanoparticles, the nonlinear absorptions of Ag nanoparticles are found to be size-dependent. All these nonlinear absorptions can be compatibly explained from the viewpoints of electronic transitions, energy bands and electronic structures in the conduction band of Ag nanoparticles. The nonlinear refraction is attributed to the effect of hot electrons arising from the intraband transition in the s–p conduction band of Ag nanoparticles.     

氧空位对ZnO基(110)二维膜材料电子结构的影响研究

在密度泛函理论方法的基础上,系统研究了本征氧化锌和氧空位氧化锌的(110)二维膜材料的形成和电子结构性质.计算分析结果表明,ZnO的本征(110)二维膜比氧空位的(110)二维膜稳定性高,ZnO的(110)二维膜有失去氧的倾向.本征ZnO的(110)膜为直接带隙型材料,带隙宽度为2.3 eV,氧空位(110)膜为间接带隙型材料,带隙宽度为1.877 eV.氧空位的(110)膜导带向下移动,并且导带中的能级简并化.氧空位(110)膜材料的导带底能级有2个能谷,分别位于1.877 eV和1.88 eV,这些位置的能级有效质量比本征膜大幅度增大,这些位置的电子速度普遍较低. ZnO的(110)膜产生氧空位之后,Zn的s电子参与形成其价带顶能级.氧空位(110)膜材料中Zn-O键的混合型结合倾向增大.     

硅酸锌的电子结构

采用局域密度泛函理论和第一性原理的方法,计算四方结构和六角结构硅酸锌的平衡晶格常数、电子态密度和能带结构。计算结果表明,四方结构硅酸锌的平衡晶格常数为0.71048nm,六角结构为1.40877nm,两者与实验值的误差均在1%左右。态密度图显示,主要电子态分布在-7.18～0.00eV和2.79～10.50eV两个能量区域;同时,不同元素电子对导带和价带有不同贡献,其中氧的p态电子对价带顶贡献最大,锌的s态电子对导带底贡献最大。能带计算表明,四方与六角结构硅酸锌均为直接带隙半导体,禁带宽度分别为2.66,2.89eV。     

Electronic energy structure of SiO2: An application of the recursion method

The electronic structures of α-quartz, β-cristobalite and stishovite have been calculated using semiempirical tight-binding Hamiltonian and the recursion method. The model describes fairly well the valence states and lower conduction bands as well as trends in band gaps and effective charges. For comparison, the electronic structure of α-quartz has been calculated in Harrison's universal first-neighbour parametrization.     

量子局域效应和应力对GaSb纳米线电子结构影响的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法, 研究了不同晶体结构和尺寸的GaSb纳米线能带结构特性和载流子的有效质量, 以及单轴应力对GaSb纳米线能带结构的调控. 研究结果表明: 闪锌矿结构[111]方向和纤锌矿结构[0001]方向的小尺寸GaSb纳米线均出现间接带隙的能带结构, 并可通过单轴应力来实现纳米线能带结构由间接带隙到直接带隙的转变, 其中, 闪锌矿结构[111]方向GaSb纳米线仅在受到单轴拉伸应力时才发生能带由间接带隙到直接带隙的转变, 而纤锌矿结构[0001]方向GaSb纳米线无论受单轴拉伸还是压缩应力的作用均可实现能带由间接带隙到直接带隙的转变; [111]和[0001]方向GaSb纳米线的带隙和载流子有效质量与纳米线直径呈非线性关系, 并随纳米线直径的减小而增大; 同一方向和尺寸的GaSb纳米线, 其空穴有效质量要小于电子有效质量, 这表明小尺寸GaSb纳米线有利于空穴载流子输运.     

The Electronic and Lattice Structures of the Groundand the Polaron States of Polymer Poly (Phenylene Vinylene) (PPV)

The electronic and lattice structures of poly (phenylene vinylene) (PPV) are studied theoretically. Both the electron-electron and electron-phonon interactions are taken into account in the Pariser-Parr-Pople model. The electronic band and the lattice structure of the ground state and the polaronic state are calculated by means of the unrestricted Hartree-Fock method. In the ground state, there exist eight bands in PPV including four valence bands and four conduction bands, and the benzenes can be considered to be rigid. The polaron induces the split of energy bands. There are four localized electronic states within the energy gap. The defect of the polaron appears to extend over about 5 units. The benzenes are strongly affected by the electron-phonon interaction. Our calculation for the energy band structure of the ground and polaron states are consistent with experimental absorption spectra. The results of our calculation show that the electron-phonon and inter-site electron-electron interactions play an important role in determining the electronic and lattice structures.     

The Electronic and Lattice Structures of the Ground and the Polaron States of Polymer Poly (Phenylene Vinylene) (PPV)

The electronic and lattice structures of poly (phenylene vinylene) (PPV) are studied theoretically. Both the electron-electron and electron-phonon interactions are taken into account in the Pariser-Parr-Pople model. The electronic band and the lattice structure of the ground state and the polaronic state are calculated by means of the unrestricted Hartree-Fock method. In the ground state, there exist eight bands in PPV including four valence bands and four conduction bands, and the benzenes can be considered to be rigid. The polaron induces the split of energy bands. There are four localized electronic states within the energy gap. The defect of the polaron appears to extend over about 5 units. The benzenes are strongly affected by the electron-phonon interaction. Our calculation for the energy band structure of the ground and polaron states are consistent with experimental absorption spectra. The results of our calculation show that the electron-phonon and inter-site electron-electron interactions play an important role in determining the electronic and lattice structures.     

Electronic structure model for n- and p-type silicon quantum dots

We present effective mass, single-particle calculations of the electronic structure of n- and p-type silicon quantum dots. The structures investigated approximate silicon quantum dots fabricated on 〈 001〉-oriented SIMOX wafers. The effects of possible built-in strain are investigated in the framework of deformation potential induced splitting of the six degenerate conduction band valleys and the splitting of the degeneracy at the top of the bulk valence band. We present the energy levels and their degeneracies as functions of the dimensions of simple tetragonal model quantum dots. Our results are relevant for silicon quantum dots that are sufficiently small such as to lead to a predominance of the confinement energy over the Coulomb energy.     

Electronic structure of non-stoichiometric zirconium nitrides ZrNx

The electronic structures of zirconium nitrides, ZrN_x, have been investigated by X-ray photoelectron spectroscopy over the entire composition range of the rocksalt structure (0.5 ? x ? 1). The valence region spectrum of nearly stoichiometric ZrN is consistent with APW band structure calculation. When removing a nitrogen atom the valence band spectra exhibit an intensity increase of the d conduction band, due in part to the filling of a new created defect state at around 2 eV binding energy.     

Field-induced energy band and effective mass anisotropy in coupled double quantum wells

The effects of the field-induced conduction band anisotropy on the electron effective mass and electrical transport properties of coupled double quantum well structures are discussed. This anisotropy is due to the formation of a partial energy gap in the dispersion curves of coupled double quantum wells by an in-plane magnetic field. The reported data show that the magnitude of this gap is mainly dependent on the interwell coupling, although it also depends on the magnitude of the applied magnetic field. A field-induced anisotropy of the electron effective mass and the in-plane electrical transport properties, due to the formation of a saddle point at the lower edge of this gap, is predicted. Further, a simple model to estimate the critical field at which a saddle point appears is also discussed.     

铁电体SrBi2Nb2O2电子能带结构的第一性原理研究

采用第一性原理的方法计算了SrBi₂Nb_2O.9（SBN）的顺电相、铁电相的电子结构.顺电相是间接带隙, 铁电相是直接带隙，它们的大小分别为1.57和2.23 eV.顺电相和铁电相的价带顶均主要来自于O₂p态的贡献.而顺电相和铁电相的导带底则分别来自Nb₄d态和Bi₆p态的贡献.计算表明SBN铁电相的低的漏电流与Bi 6p轨道有关.由顺电相到铁电相时，Nb₄d和O_{2 关键词： 顺电相 铁电相 态密度 电子能带结构}     

Doping effects on metallic and semiconductor single-wall carbon nanotubes

In this paper we investigate nitrogen- and boron-doped zigzag and armchair single-wall carbon nanotubes (SWNTs) with theoretical models based on the density functional theory. We take into account nitrogen and boron doping for two isomers in which substitutive atoms are on opposite sides of the tube, but only in one isomer the impurity sites are symmetrical with respect to the diameter. The band structures show a strong hybridization with impurity orbitals that change the original band structure. Although the two isomers of armchair SWNT exhibit the same formation energy, their band structures are different. Indeed asymmetrical isomers are gapless and exhibit a crossing of valence and conduction bands at k?=?π/c, leading to metallic SWNTs. Band structures of symmetrical isomers, on the other hand, exhibit an energy gap of 0.4?eV between completely filled valence and empty conduction bands. We use density of charge in order to understand this difference. In zigzag SWNT an impurity band is introduced in the energy gap and for N doping this band is just partially occupied in such a way that the electronic behaviour is reversed from semiconductor to metallic. Whereas for a given isomer armchair SWNT shows similar behaviours of N- and B-doped structures, B-doped zigzag SWNTs present different band structure and occupation compared to the N-doped case.     

MgxZn1-xO结构性质

采用第一性原理计算模拟了不同组分的Mg_xZn_1-xO半导体混晶的晶格常数、总能、结构,以及禁带宽度的变化。计算结果显示,随着Mg组分的增加,晶格常数逐渐减小,晶体逐渐偏离纤锌矿结构。对各种不同的Mg原子排列情况进行比较认为,Mg_xZn_1-xO的结构随组分x的增大,发生从纤锌矿到岩盐矿的结构相变的可能性高于发生相分离。另一方面,禁带宽度随组分增大主要由价带顶的移动所致。进一步分析Mg原子各种电子态对价带的影响表明,Mg对价带顶附近能带的贡献依次来自p、d、s态电子。随着组分x的增加,p态电子在价带顶附近的密度明显提高,说明sp轨道杂化不但对晶体的几何结构产生影响,而且对其电子结构也起重要作用。     

Modeling of Nonthermal Solid‐to‐Solid Phase Transition in Diamond Irradiated with Femtosecond x‐ray FEL Pulse

In this contribution we review in detail our recently developed hybrid model able to trace simultaneously nonequilibrium electron kinetics, evolution of an electronic structure, and eventually nonthermal phase transition in solids irradiated with femtosecond free‐electron laser pulses. Diamond irradiated with an ultrashort intense x‐ray pulse serves as an example to show how an irradiated material undergoes an ultrafast phase transition on sub‐picosecond timescales. The transition of diamond into graphite is induced by an excitation of electrons from the valence band into the conduction band, which, in turn, induces a rapid change of the interatomic potential. Our theoretical model incorporates: a Monte‐Carlo method for tracing high‐energy electrons and K‐shell holes in diamond; a temperature equation for the valence‐band and low‐energy conduction‐band electrons; a tight binding method for calculation of the evolving electronic structure of the material and potential energy surfaces; and molecular dynamics propagating atomic trajectories. This unified approach predicts the damage threshold of diamond in a good agreement with experimentally measured values. It reveals a multi‐step nature of nonthermal phase transition being an interplay between electronic excitation, changes of the band structure, and atomic reordering. An effect of pulse parameters, such as photon energy and temporal pulse shape, on the phase transition is discussed in detail. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

氧化石墨烯纳米带能带结构和态密度的第一性原理研究

基于密度泛函理论,采用第一性原理方法,计算了氧化石墨烯纳米带的电荷密度、能带结构和分波态密度。结果表明,石墨烯纳米带被氧化后,转变为间接带隙半导体,带隙值为0.375 e V。电荷差分密度表明,从C原子和H原子到O原子之间有电荷的转移。分波态密度显示,在导带和价带中C-2s、2p,O-2p,H-1s电子态之间存在强烈的杂化效应。在费米能级附近,O-2p态电子局域效应的贡献明显,对于改善氧化石墨烯纳米带的半导体发光效应起到了主要作用。     

Cu、Ag和Au掺杂AlN的电磁性质的第一性原理研究

采用基于密度泛函理论（DFT）的平面波超软赝势法,研究了Cu、Ag、Au掺杂AlN的晶格常数、磁矩、能带结构和态密度。电子结构表明,Cu、Ag、Au的掺杂使在带隙中引入了由杂质原子的d态与近邻N原子的2p态杂化而成的杂质带,都为p型掺杂,增强了体系的导电性。Cu掺杂AlN具有半金属铁磁性,半金属能隙为0.442eV,理论上可实现100%的自旋载流子注入;Ag掺杂AlN具有很弱的半金属铁磁性;而Au掺杂AlN不具有半金属铁磁性。因此,与Ag、Au相比,Cu更适合用来制作AlN基稀磁半导体。     

不同Yb掺杂浓度的ZnO的电子结构与光学特性

本文基于密度泛函理论(DFT)框架下的第一性原理计算方法,研究了不同Yb浓度掺杂ZnO体系的电子结构和光学性质.计算得到的结果证明,Yb掺杂ZnO后会造成电子结构和光学性质的明显改变.增加掺杂浓度使能带带隙逐渐变窄,其费米能级向上移动到导带,表现出n型半导体的特性;在Yb-4f态导带附近的带隙中产生了新的缺陷,同时观察到更好的吸收系数和折射率.因此,Yb掺杂ZnO对其电子性质和光学结构有很大的影响,为进一步深入了解掺杂ZnO性质的影响提供理论基础.     

Calculation of the electronic band structure for the hole-metal state of iodine in high-pressure phase

It is shown by calculation of an electronic energy band structure that iodine in high-pressure phase (above 210 kbar) is a “hole-metal”, in which the conduction is due to holes. Properties of such states are discussed on the basis of the calculated band and analysis of measurements of a reflectance and a thermoelectric power recently reported.     

Resonant scattering by impurities in metals and the Anderson model

The Anderson Hamiltonian, written in a representation where the extra orbital is not orthogonal to the conduction states, is used to derive a general theory of the electronic structure of dilute alloys. The theory describes both simple impurities in the over-complete or Wolff limit, and transition or rare-earth impurities where the scattering of the conduction electrons has a resonance. The extra-orbital of Anderson is shown to be identical to a bound state extracted from higher bands by the impurity potential, and overlapping the conduction band in energy. The resonant scattering of conduction electrons is described by a pseudopotential, which is singular in energy, in analogy to the theory of band structures of pure transition elements. The position and width of the resonance, as well as a direct scattering potential introduced by the non-orthogonality, are given in terms of Anderson's parameters. The resonance is narrowed by the non-orthogonality and disappears in the over-complete limit.