Ultrathin Coating of Confined Pt Nanocatalysts by Atomic Layer Deposition for Enhanced Catalytic Performance in Hydrogenation Reactions

Metal‐support interfaces play a prominent role in heterogeneous catalysis. However, tailoring the metal‐support interfaces to realize full utilization remains a major challenge. In this work, we propose a graceful strategy to maximize the metal‐oxide interfaces by coating confined nanoparticles with an ultrathin oxide layer. This is achieved by sequential deposition of ultrathin Al₂O₃ coats, Pt, and a thick Al₂O₃ layer on carbon nanocoils templates by atomic layer deposition (ALD), followed by removal of the templates. Compared with the Pt catalysts confined in Al₂O₃ nanotubes without the ultrathin coats, the ultrathin coated samples have larger Pt–Al₂O₃ interfaces. The maximized interfaces significantly improve the activity and the protecting Al₂O₃ nanotubes retain the stability for hydrogenation reactions of 4‐nitrophenol. We believe that applying ALD ultrathin coats on confined catalysts is a promising way to achieve enhanced performance for other catalysts.     

Stabilization of Copper Catalysts for Liquid‐Phase Reactions by Atomic Layer Deposition

Atomic layer deposition (ALD) of an alumina overcoat can stabilize a base metal catalyst (e.g., copper) for liquid‐phase catalytic reactions (e.g., hydrogenation of biomass‐derived furfural in alcoholic solvents or water), thereby eliminating the deactivation of conventional catalysts by sintering and leaching. This method of catalyst stabilization alleviates the need to employ precious metals (e.g., platinum) in liquid‐phase catalytic processing. The alumina overcoat initially covers the catalyst surface completely. By using solid state NMR spectroscopy, X‐ray diffraction, and electron microscopy, it was shown that high temperature treatment opens porosity in the overcoat by forming crystallites of γ‐Al₂O₃. Infrared spectroscopic measurements and scanning tunneling microscopy studies of trimethylaluminum ALD on copper show that the remarkable stability imparted to the nanoparticles arises from selective armoring of under‐coordinated copper atoms on the nanoparticle surface.     

Atomic Layer Deposition Overcoating: Tuning Catalyst Selectivity for Biomass Conversion

The terraces, edges, and facets of nanoparticles are all active sites for heterogeneous catalysis. These different active sites may cause the formation of various products during the catalytic reaction. Here we report that the step sites of Pd nanoparticles (NPs) can be covered precisely by the atomic layer deposition (ALD) method, whereas the terrace sites remain as active component for the hydrogenation of furfural. Increasing the thickness of the ALD‐generated overcoats restricts the adsorption of furfural onto the step sites of Pd NPs and increases the selectivity to furan. Furan selectivities and furfural conversions are linearly correlated for samples with or without an overcoating, though the slopes differ. The ALD technique can tune the selectivity of furfural hydrogenation over Pd NPs and has improved our understanding of the reaction mechanism. The above conclusions are further supported by density functional theory (DFT) calculations.     

原子层沉积构筑Pd/TiO2限域催化剂及其在1,4-丁炔二醇加氢的应用

利用ALD制备了TiO₂限域的Pd催化剂, 研究了限域空间内Pd纳米颗粒与TiO₂的界面作用对1,4-丁炔二醇(BYD)加氢性能的影响. 相比于管外负载型催化剂, 限域催化剂在催化1,4-丁炔二醇选择性加氢反应中体现出非常高的催化活性和1,4-丁烯二醇的选择性. HR-TEM、 EDX-Mapping、 XRD、 XPS和H₂-TPR表征说明, 限域体系中Pd-TiO₂的界面相互作用强于传统TiO₂表面负载型Pd催化剂, 这种强界面作用不仅能够提高BYD的加氢活性, 也可抑制半加氢产物1,4-丁烯二醇的异构化和深度加氢, 提高1,4-丁烯二醇的选择性, 而且限域结构也可阻止管内壁Pd纳米颗粒的脱落, 提高催化剂的稳定性.     

A Tandem Catalyst with Multiple Metal Oxide Interfaces Produced by Atomic Layer Deposition

Ideal heterogeneous tandem catalysts necessitate the rational design and integration of collaborative active sites. Herein, we report on the synthesis of a new tandem catalyst with multiple metal‐oxide interfaces based on a tube‐in‐tube nanostructure using template‐assisted atomic layer deposition, in which Ni nanoparticles are supported on the outer surface of the inner Al₂O₃ nanotube (Ni/Al₂O₃ interface) and Pt nanoparticles are attached to the inner surface of the outer TiO₂ nanotube (Pt/TiO₂ interface). The tandem catalyst shows remarkably high catalytic efficiency in nitrobenzene hydrogenation over Pt/TiO₂ interface with hydrogen formed in situ by the decomposition of hydrazine hydrate over Ni/Al₂O₃ interface. This can be ascribed to the synergy effect of the two interfaces and the confined nanospace favoring the instant transfer of intermediates. The tube‐in‐tube tandem catalyst with multiple metal‐oxide interfaces represents a new concept for the design of highly efficient and multifunctional nanocatalysts.     

Atomic-Scale Designing of Zeolite Based Catalysts by Atomic Layer Deposition

Zeolite-supported catalysts have been widely used in the field of heterogeneous catalysis. Atomic-scale governing the metal or acid sites on zeolites still encounters great challenge in controllable synthesis and developing of novel catalysts. Atomic layer deposition (ALD), owing to its unique character of self-limiting surface reactions, becomes one of the most promising and controllable strategies to tailor the metallic deposition sites in atomic scale precisely. In this review, we present a comprehensive summary and viewpoint of recent research in designing and engineering the structural of zeolite-based catalysts via ALD method. A prior focus is laid on the deposition of metals on the zeolites with emphasis on the isolated states of metals, followed by introducing the selected metals into channels of zeolites associates with identifying the location of metals in and/or out of the channels. Subsequently, detailed analysis of tailoring the acid sites of different zeolites is provided. Assisted synthesis of zeolite and the regioselective deposition of metal on special sites to modify the structures of zeolites are also critically discussed. We further summarize the challenges of ALD with respect to engineering the active sites in heterogeneous zeolite-based catalysts and provide the perspectives on the development in this field.     

Nanoscale Structuring of Surfaces by Using Atomic Layer Deposition

Controlled structuring of surfaces is interesting for a wide variety of areas, including microelectronic device fabrication, optical devices, bio(sensing), (electro‐, photo)catalysis, batteries, solar cells, fuel cells, and sorption. A unique feature of atomic layer deposition (ALD) is the possibility to form conformal uniform coatings on arbitrarily shaped materials with controlled atomic‐scale thickness. In this Minireview, we discuss the potential of ALD for the nanoscale structuring of surfaces, highlighting its versatile application to structuring both planar substrates and powder materials. Recent progress in the application of ALD to porous substrates has even made the nanoscale structuring of high‐surface‐area materials now feasible, thereby enabling novel applications, such as those in the fields of catalysis and alternative energy.     

Atomic and Molecular Layer Deposition as Surface Engineering Techniques for Emerging Alkali Metal Rechargeable Batteries

Alkali metals (lithium, sodium, and potassium) are promising as anodes in emerging rechargeable batteries, ascribed to their high capacity or abundance. Two commonly experienced issues, however, have hindered them from commercialization: the dendritic growth of alkali metals during plating and the formation of solid electrolyte interphase due to contact with liquid electrolytes. Many technical strategies have been developed for addressing these two issues in the past decades. Among them, atomic and molecular layer deposition (ALD and MLD) have been drawing more and more efforts, owing to a series of their unique capabilities. ALD and MLD enable a variety of inorganic, organic, and even inorganic-organic hybrid materials, featuring accurate nanoscale controllability, low process temperature, and extremely uniform and conformal coverage. Consequently, ALD and MLD have paved a novel route for tackling the issues of alkali metal anodes. In this review, we have made a thorough survey on surface coatings via ALD and MLD, and comparatively analyzed their effects on improving the safety and stability of alkali metal anodes. We expect that this article will help boost more efforts in exploring advanced surface coatings via ALD and MLD to successfully mitigate the issues of alkali metal anodes.     

Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption

Manganese oxide (MnO_x) shows great potential in the areas of nano-electronics, magnetic devices and so on. Since the characteristics of precise thickness control at the atomic level and self-align lateral patterning, area-selective deposition (ASD) of the MnO_x films can be used in some key steps of nanomanufacturing. In this work, MnO_x films are deposited on Pt, Cu and SiO₂ substrates using Mn(EtCp)₂ and H₂O over a temperature range of 80–215 °C. Inherently area-selective atomic layer deposition (ALD) of MnO_x is successfully achieved on metal/SiO₂ patterns. The selectivity improves with increasing deposition temperature within the ALD window. Moreover, it is demonstrated that with the decrease of electronegativity differences between M (M = Si, Cu and Pt) and O, the chemisorption energy barrier decreases, which affects the initial nucleation rate. The inherent ASD aroused by the electronegativity differences shows a possible method for further development and prediction of ASD processes.     

Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting

Transition‐metal phosphides (TMP) prepared by atomic layer deposition (ALD) are reported for the first time. Ultrathin Co‐P films were deposited by using PH₃ plasma as the phosphorus source and an extra H₂ plasma step to remove excess P in the growing films. The optimized ALD process proceeded by self‐limited layer‐by‐layer growth, and the deposited Co‐P films were highly pure and smooth. The Co‐P films deposited via ALD exhibited better electrochemical and photoelectrochemical hydrogen evolution reaction (HER) activities than similar Co‐P films prepared by the traditional post‐phosphorization method. Moreover, the deposition of ultrathin Co‐P films on periodic trenches was demonstrated, which highlights the broad and promising potential application of this ALD process for a conformal coating of TMP films on complex three‐dimensional (3D) architectures.     

十八烷基键合硅胶的原子层沉积法封尾及其在碱性化合物分离中的应用

采用原子层沉积法对十八烷基键合硅胶进行端基封尾.以六甲基二硅氮烷为封端试剂,在250 ℃下与键合硅胶样品反应6 h,制备了对碱性化合物具有高惰性的反相色谱填料.分别以吡啶/苯酚和萘/阿米替林为分子探针,考察了经原子层沉积法和传统液相有机溶剂法封尾处理的十八烷基键合硅胶的色谱性能,并与商品十八烷基硅胶Zorbax SB-C18和Kromasil C18进行对比.结果表明,原子层沉积法封尾的十八烷基硅胶对碱性化合物的分离特性明显优于传统液相法,其色谱性能已超过Zorbax SB-C18,与Kromasil C18相当.本方法无需有机溶剂,操作简便,反应耗时短,易于放大生产,封尾反应完全,应用前景良好.     

Potential Precursor Alternatives to the Pyrophoric Trimethylaluminium for the Atomic Layer Deposition of Aluminium Oxide

New precursor chemistries for the atomic layer deposition (ALD) of aluminium oxide are reported as potential alternatives to the pyrophoric trimethylaluminium (TMA) which is to date a widely used Al precursor. Combining the high reactivity of aluminium alkyls employing the 3-(dimethylamino)propyl (DMP) ligand with thermally stable amide ligands yielded three new heteroleptic, non-pyrophoric compounds [Al(NMe₂)₂(DMP)] ( 2 ), [Al(NEt₂)₂(DMP)] ( 3 , BDEADA) and [Al(NiPr₂)₂(DMP)] ( 4 ), which combine the properties of both ligand systems. The compounds were synthesized and thoroughly chemically characterized, showing the intramolecular stabilization of the DMP ligand as well as only reactive Al−C and Al−N bonds, which are the key factors for the thermal stability accompanied by a sufficient reactivity, both being crucial for ALD precursors. Upon rational variation of the amide alkyl chains, tunable and high evaporation rates accompanied by thermal stability were found, as revealed by thermal evaluation. In addition, a new and promising plasma enhanced (PE)ALD process using BDEADA and oxygen plasma in a wide temperature range from 60 to 220 °C is reported and compared to that of a modified variation of the TMA, namely [AlMe₂(DMP)] (DMAD). The resulting Al₂O₃ layers are of high density, smooth, uniform, and of high purity. The applicability of the Al₂O₃ films as effective gas barrier layers (GBLs) was successfully demonstrated, considering that coating on polyethylene terephthalate (PET) substrates yielded very good oxygen transmission rates (OTR) with an improvement factor of 86 for a 15 nm film by using DMAD and a factor of 25 for a film thickness of just 5 nm by using BDEDA compared to bare PET substrates. All these film attributes are of the same quality as those obtained for the industrial precursor TMA, rendering the new precursors safe and potential alternatives to TMA.     

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications. In this study, GaN films are grown using a plasma-enhanced atomic layer deposition (PEALD) with trimethylgallium (TMG) and NH₃ plasma. The effect of substrate temperature on growth mechanism and properties of the PEALD GaN films is systematically studied. The experimental results show that the self-limiting surface chemical reactions occur in the substrate temperature range of 250–350 °C. The substrate temperature strongly affects the crystalline structure, which is nearly amorphous at below 250 °C, with (100) as the major phase at below 400 °C, and (002) dominated at higher temperatures. The X-ray photoelectron spectroscopy spectra reveals the unintentional oxygen incorporation into the films in the forms of Ga₂O₃ and Ga-OH. The amount of Ga-O component decreases, whereas the Ga-Ga component rapidly increases at 400 and 450 °C, due to the decomposition of TMG. The substrate temperature of 350 °C with the highest amount of Ga-N bonds is, therefore, considered the optimum substrate temperature. This study is helpful for improving the quality of PEALD GaN films.     

Optimizing the Atomic Layer Deposition of Alumina on Perovskite Nanocrystal Films by Using O2 As a Molecular Probe

Encapsulation methods have shown to be effective in imparting improved stability to metal-halide perovskite nanocrystals (NCs). Atomic layer deposition (ALD) of metal oxides is one of the promising approaches for such encapsulation, yet better control on the process parameters are required to achieve viable lifetimes for several optoelectronic and photocatalytic applications. Herein, we optimize the ALD process of amorphous aluminum oxide (AlO_x) as an encapsulating layer for CsPbBr₃ NC thin films by using oxygen (O₂) as a molecular diffusion probe to assess the uniformity of the deposited AlO_x layer. When O₂ reaches the NC surface, it extracts the photogenerated electrons, thus quenching the PL of the CsPbBr₃ NCs. As the quality of the ALD layer improves, less quenching is expected. We compare three different ALD deposition modes. We find that the low temperature/high temperature and the exposure modes improve the quality of the alumina as a gas barrier when compared with the low temperature mode. We attribute this result to a better diffusion of the ALD precursor throughout the NC film. We propose the low temperature/high temperature as the most suitable mode for future implementation of multilayered coatings.     

Chemical Infiltration during Atomic Layer Deposition: Metalation of Porphyrins as Model Substrates

New uses for ALD : By applying standard metal oxide atomic layer deposition (ALD) to two types of porphyrins, site‐specific chemical infiltration of substrate molecules is achieved: Diethylzinc can diffuse into the interior of porphyrin supramolecular structures and induce metalation of the porphyrin molecules from the vapor phase. A=Ph, p‐HO₃SC₆H₄.

     

Role of Anionic Backbone in NHC-Stabilized Coinage Metal Complexes: New Precursors for Atomic Layer Deposition**

Cu and Ag precursors that are volatile, reactive, and thermally stable are currently of high interest for their application in atomic-layer deposition (ALD) of thin metal films. In pursuit of new precursors for coinage metals, namely Cu and Ag, a series of new N-heterocyclic carbene (NHC)-based Cu^I and Ag^I complexes were synthesized. Modifications in the substitution pattern of diketonate-based anionic backbones led to five monomeric Cu complexes and four closely related Ag complexes with the general formula [M(^tBuNHC)(R)] (M=Cu, Ag; ^tBuNHC=1,3-di-tert-butyl-imidazolin-2-ylidene; R=diketonate). Thermal analysis indicated that most of the Cu complexes are thermally stable and volatile compared to the more fragile Ag analogs. One of the promising Cu precursors was evaluated for the ALD of nanoparticulate Cu metal deposits by using hydroquinone as the reducing agent at appreciably low deposition temperatures (145–160 °C). This study highlights the considerable impact of the employed ligand sphere on the structural and thermal properties of metal complexes that are relevant for vapor-phase processing of thin films.     

Encapsulation of Homogeneous Catalysts in Mesoporous Materials Using Diffusion‐Limited Atomic Layer Deposition

The heterogenization of homogeneous metal complex catalysts has attracted great attention. The encapsulation of metal complexes into nanochannels of mesoporous materials is achieved by coating metal oxides at/near the pore entrance by diffusion‐limited atomic layer deposition (ALD) to produce a hollow plug. The pore size of the hollow plug is precisely controlled on the sub‐nanometer scale by the number of ALD cycles to fit various metal complexes with different molecular sizes. Typically, Co or Ti complexes are successfully encapsulated into the nanochannels of SBA‐15, SBA‐16, and MCM‐41. The encapsulated Co and Ti catalysts show excellent catalytic activity and reusability in the hydrolytic kinetic resolution of epoxides and asymmetric cyanosilylation of carbonyl compounds, respectively. This ALD‐assisted encapsulation method can be extended to the encapsulation of other homogeneous catalysts into different mesoporous materials for various heterogeneous reactions.     

Synthesis of Calcium(II) Amidinate Precursors for Atomic Layer Deposition through a Redox Reaction between Calcium and Amidines

We have prepared two new Ca^II amidinates, which comprise a new class of ALD precursors. The syntheses proceed by a direct reaction between Ca metal and the amidine ligands in the presence of ammonia. Bis(N,N′‐diisopropylformamidinato)calcium(II) ( 1 ) and bis(N,N′‐diisopropylacetamidinato)calcium(II) ( 2 ) adopt dimeric structures in solution and in the solid state. X‐ray crystallography revealed asymmetry in one of the bridging ligands to afford the structure [(η²‐L)Ca(μ‐η²:η²‐L)(μ‐η²:η¹‐L)Ca(η²‐L)]. These amidinate complexes showed unprecedentedly high volatility as compared to the widely employed and commercially available Ca^II precursor, [Ca₃(tmhd)₆]. In CaS ALD with 1 and H₂S, the ALD window was approximately two times wider and lower in temperature by about 150 °C than previously reported with [Ca₃(tmhd)₆] and H₂S. Complexes 1 and 2 , with their excellent volatility and thermal stability (up to at least 350 °C), are the first homoleptic Ca^II amidinates suitable for use as ALD precursors.