Γ andX bandgap hydrostatic deformation potentials for epitaxial In0.52Al0.48As on InP(001)

The pressure dependence of the direct and indirect bandgap of epitaxial In_0.52Al_0.48As on InP(001) substrate has been measured using photoluminescence up to 92 kbar hydrostatic pressure. The bandgap changes from Γ toX at an applied pressure of ∼ 43 kbar. Hydrostatic deformation potentials for both the Γ andX bandgaps are deduced, after correcting for the elastic constant (bulk modulus) mismatch between the epilayer and the substrate. For the epilayer we obtain and+(2.81±0.15)eV for the Γ andX bandgaps respectively. From the pressure dependence of the normalized Γ-bandgap photoluminescence intensity a Γ-X lifetime ratio, (τ_Γ/τ _X ), of 4.1×10⁻³ is deduced.     

An experimental exploration of chemical bond characteristic,bulk modulus and phase stability in ZnO:Cu nanocrystals under high pressure

The high pressure induced phase transitions in Zn_1−x Cu _x O (x=0.005 and 0.011) are investigated by angle-dispersive synchrotron radiation X-ray diffraction. As the pressure increases, phase transformations from the wurtzite structure to the rocksalt structure are observed in both samples, with the transition pressures at 9.8 GPa and 7.9 GPa, respectively. With the increasing of the Cu-doping concentration in ZnO, crystalline parameters, the bulk moduli, and the Zn–O bond lengths all increased, meanwhile, the transition pressures decreased. The results could be explained in terms of the reduction of phase transformation barriers and the lowering of bond energy.     

Optical Properties of High Pressure Phases in ZnTe 1− x Se x

We report on the optical properties of high pressure semiconducting phases in ZnTe 1 m x Se x . In the Te rich side, the cinnabar phase is observed in the upstroke between typically 9.5 and 12.5 GPa with a pressure interval of existence that decreases with increasing the Se content. In most studied samples, the indirect absorption edge could be determined, with values of the bandgap increasing with the Se content and ranging from 1.2 to 1.7 eV. In the downstroke, the cinnabar phase is observed in the whole composition range but its bandgap can not be unambiguously determined in the Se-rich side, as it coexists with rocksalt or zincblende phases. The indirect semiconducting rocksalt phase is observed in the Se-rich side, with an indirect bandgap of the order of 0.7 eV. Within the experimental errors, the bandgaps of both the cinnabar and NaCl phases are pressure insensitive, in agreement with first-principles pseudopotential band structure calculations, that predict very low pressure coefficients for both indirect transitions.     

Pressure-induced phase transition in wurtzite ZnS: An ab initio constant pressure study

We study the pressure-induced phase transition of wurtzite ZnS using a constant pressure ab initio technique. A first-order phase transition into a rocksalt state at 30–35 GPa is observed in the constant pressure simulation. We also investigate the stability of wurtzite (WZ) and zinc-blende (ZB) phases from energy–volume calculations and Gibbs free energies at zero temperature and find that both structures show nearly similar equations of state and transform into a rocksalt structure around 14 GPa, in agreement with experiments. Additionally, we examine the influence of pressure on the electronic structure of the wurtzite and zinc-blende ZnS crystals and find that their band gap energies exhibit similar tendency and increase with increasing pressure. The calculated pressure coefficients and deformation potential are found to be comparable with experiments.     

Ab initio calculations of the deformation potentials for intervalley phonon-assisted transitions in АIIIВV crystals with sphalerite structure

Completely self-consistent ab initio calculations of scattering of electrons between the lowest minima of the conduction band by short-wavelength phonons are performed for the first time for a group of А ^III В ^V semiconductor crystals. The structure constants, electron and vibrational spectra, and probabilities of scattering are calculated for the crystals from unified positions within the electronic density functional method. The theory does not involve any phenomenological assumptions on positions of minima in the conduction band, effective carrier masses, interatomic forces, or scattering probabilities. The electron-phonon coupling constants (the deformation potentials) for actual Γ−X, Γ−L, and X−L transitions for scattering between the nonequivalent X−X and L−L valleys in the conduction bands of AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb crystals with sphalerite structure are calculated. Results obtained are compared with theoretical calculations within the phenomenological rigid ion model and with those performed by the selfconsistent frozen phonon method.     

Structural, electronic and optical properties of AgI under pressure

We report results of first-principles total-energy calculations for structural properties of the group I-VII silver iodide (AgI) semiconductor compound under pressure for B1 (rocksalt), B2 (cesium chloride), B3 (zinc-blende) and B4 (wurtzite) structures. Calculations have been performed using all-electron full-potential linearized augmented plane wave plus local orbitals FP-LAPW + lo method based on density-functional theory (DFT) and using generalised gradient approximation (GGA) for the purpose of exchange correlation energy functional. In agreement with experimental and earlier ab initio calculations, we find that the B3 phase is slightly lower in energy than the B4 phase, and it transforms to B1 structure at 4.19 GPa. Moreover, we found AgI has direct gap in B3 structure with a band gap of 1.378 eV and indirect band gap in B1 phase with a bandgap around 0.710 eV. We also present results of the effective masses for the electrons in the conduction band (CB) and the holes in the valence band (VB). To complete the fundamental characteristics of this compound we have analyzed their linear optical properties such as the dynamic dielectric function and energy loss function for a wide range of 0-25 eV.     

Eu<Superscript>3+</Superscript> doped yttrium oxysulfide quantum structures—structural,optical and electronic properties

Small particles of trivalent europium doped yttrium oxysulfide nanocrystals (ϕ ∼ 7 nm) were synthesized using sol–gel polymer thermolysis. The nanocrystals show significant change in the excitation bands corresponding to fundamental absorption and charge transfer absorption bands. The optical spectra essentially comprise of two parts: fundamental absorption (∼260 nm) and Eu³⁺–X²⁻ ligand (O²⁻/S²⁻) charge transfer (∼290 nm) bands. They show significant blue shifts (0.24–0.30 eV), respectively, with respect to the bulk counterpart. These may be explained by considering possible size dependent changes associated with quantum confinement effect in this large bandgap semiconductor system. FT-IR spectra revealed the difference in chemisorbed species between bulk and nanocrystalline samples. The results of the solid-state photo-induced electrical impedance spectroscopy studies are reported.     

First principles calculations of mechanical properties of cubic 5d transition metal monocarbides

The electronic and elastic properties of cubic 5d transition metal monocarbides in rocksalt, cesium chloride, and zinc blende structures have been studied by first principles calculations. The calculations show that the incompressibility for ReC in cesium chloride structure is even higher than that of diamond under pressure (above 89 GPa). The transformation pressure from zinc blende structure to rocksalt structure takes place at about 47 GPa for PtC. HfC-NaCl, ReC-CsCl, and HfC-ZnS have the smallest metallicity, leading to higher hardness. A valence electron number of 8/cell may be a stable valence shell configuration for 5d transition metal monocarbides in rocksalt and zinc blende structures.     

Quantum melting of mesoscopic clusters

The phase diagram of a two-dimensional mesoscopic system of charges or dipoles, whose realizations could be electrons in a semiconductor quantum dot or indirect excitons in a system of two vertically coupled quantum dots, is investigated. Quantum calculations using ab initio Monte Carlo integration along trajectories determine the properties of such objects in the temperature-quantum de-Boer-parameter plane. At zero (sufficiently low) temperature, as the quantum fluctuations of the particles increase, two types of quantum disordering phenomena occur with increasing quantum de Boer parameter q: first, for q∼10⁻⁵ the systems transform into a radially ordered but orientationally disordered state wherein various shells of the “atom” rotate relative to one another. For much larger q∼0.1, a transition occurs to a disordered state (a superfluid in the case of a system of bosons). Fiz. Tverd. Tela (St. Petersburg) 41, 1856–1862 (October 1999)     

Elastic and thermodynamic properties in CdO at high pressures from first-principles calculations

In this study, we report first-principles calculations of the elastic and thermodynamic properties for CdO in both the B1 (rocksalt) phase and B2 (cesium chloride) phase. The calculations are performed within the framework of density functional theory, using the pseudopotential plane-wave method. From the theoretical results, we find that the high pressure structural phase transition of CdO from B1 structure to B2 structure is 90.31 GPa. The calculated values are, generally speaking, in good agreement with experiments and with similar theoretical calculations. According to the quasi-harmonic Debye model, we investigate the sound velocity and Debye temperature of CdO under pressures in the range of 0<P<150 GPa.     

Spectroscopic study ofβ-Ni(OH)2 under pressure

Infrared absorption and Raman study ofβ-Ni(OH)₂ has been carried out up to 25 GPa and 33 GPa, respectively. The frequency ofA _2u internal antisymmetric stretching O-H mode decreases linearly with pressure at a rate of −0.7 cm⁻1/GPa. The FWHM of this mode increases continuously with pressure and reaches a value of ∼ 120 cm⁻¹ around 25 GPa. There was no discernible change observed in the frequency and width of the symmetric stretchingA _1g O-H Raman mode up to 33 GPa. The constancy of the Raman mode is taken as a signature of the repulsion produced by H-H contacts in this material under pressure. Lack of any discontinuity in these modes suggests that there is no phase transition in this material in the measured pressure range.     

Electronic,elastic and dynamical properties of MgSe under pressure: rocksalt and iron silicide phase

The electronic, elastic and dynamical properties of MgSe in the rocksalt (B1) and iron silicide (B28) phase and the effects of pressure on these properties are investigated using first-principles method. The calculated electronic band structure indicates that the B1 phase of MgSe presents an indirect band-gap feature and the band gaps initially increase with pressure and subsequently decrease upon compression. Remarkably, an indirect-to-direct band-gap transition has been observed at the phase transition pressure. The elastic constants, bulk modulus, shear modulus, Young’s modulus, elastic anisotropy and B/G ratio of MgSe in the B1 and B28 phase at high pressure have also been investigated. The bulk modulus, shear modulus and Young’s modulus all increase monotonously with the increasing of pressure for the B1 and B28 phase of MgSe. The calculated phonon frequencies of the B1 phase at zero pressure agree well with available theoretical results. And the transverse acoustic phonon TA(X) mode of this phase completely softening to zero at 82 GPa. The phonon curves of the B28 phase under pressure have also been successfully investigated.     

Effect of pressure and mechanical stress on the electronic properties of AlN and GaN

The fundamental properties of the AlN and GaN compounds with a wurtzite structure under external hydrostatic pressure, uniaxial mechanical stress σ_⊥ along the hexagonal axis, and biaxial mechanical stress σ_⊥ in the basal plane of the unit cell have been considered in terms of first-principles calculations in the frame-work of the density functional theory. The pressures of the phase transitions from the structures of wurtzite and zinc blende to the structure of rock salt have been obtained. The behavior of the structural parameters, interband transitions, and positions of the charge neutrality level has been investigated. The calculated pressure coefficients of the band gap are as follows: ∂E _g /∂p = 40.9 meV/GPa, −∂E _g /∂σ _| = −4.2 meV/GPa, and −∂E _g /∂σ _⊥ = 45.2 meV/GPa for AlN and ∂E _g /∂p = 33.0 meV/GPa, −∂E _g /∂σ _| = 23.6 meV/GPa, and −∂E _g /∂σ _⊥ = 9.6 meV/GPa for GaN. The pressure coefficients of the charge neutrality level in almost all cases are substantially smaller than the corresponding values obtained for the band gap E _g .     

Calculation of band structure in (101)-biaxially strained Si

The structure model used for calculation was defined according to Vegard’s rule and Hooke’s law. Calculations were performed on the electronic structures of (101)-biaxially strained Si on relaxed Si_1−X Ge _X alloy with Ge fraction ranging from X = 0 to 0.4 in steps of 0.1 by CASTEP approach. It was found that [±100] and [00±1] valleys (δ₄) splitting from the [0±10] valley (Δ₂) constitute the conduction band (CB) edge, that valence band (VB) edge degeneracy is partially lifted and that the electron mass is unaltered under strain while the hole mass decreases in the [100] and [010] directions. In addition, the fitted dependences of CB splitting energy, VB splitting energy and indirect bandgap on X are all linear. Supported by the National Pre-research Foundation of China (Grant Nos. 51308040203 and 51408061105DZ0171)     

Pressure induced phase transition in ZnS

The phase transition of ZnS from the zincblende (ZB) structure to the rocksalt (RS) structure is investigated by the ab initio plane-wave pseudopotential density functional theory method. It is found that the pressures for transition from the ZB structure to the RS structure are 17.5 GPa from total energy-volume data and 15.4 GPa from equal enthalpies, consistent with the experimental data. From the high pressure elastic constants obtained, we find that the ZB structure ZnS is unstable when the applied pressure is larger than 17 GPa. Moreover, the dependence of the normalized primitive cell volume V/V₀ on pressure P can also be successfully obtained.     

Properties of shock-compressed liquid krypton at pressures of up to 90 GPa

The following quantities of shock-compressed liquid krypton are measured behind a plane shock front at pressures up to 90 GPa: compressibility up to densities of 7 g/cm³, brightness (color) temperatures of 6000–24000 K, and electrical conductivities of 40–60000 (Ω·m)⁻¹. X-t diagram methods are used to estimate sound speeds of up to 5.5 km/s at pressures of 30–75 GPa. The optical absorption coefficients in the violet and red (30–300 cm⁻¹) are measured at pressures of 20–90 GPa from the rise in brightness of the shock front luminosity. The optical reflection coefficient of the shock front (∼13%) at a pressure of 76.1 GPa is measured for the first time. Zh. éksp. Teor. Fiz. 116, 551–562 (August 1999)     

Effect of pressure on Raman spectra of SnS2 single crystals

The 2H polytype of a SnS₂ layered crystal has been studied using Raman spectroscopy at pressures of up to 5 GPa in a diamond anvil cell. The Raman frequency of the intralayer mode increases linearly with increasing pressure at baric coefficients of 5.2 cm⁻¹/GPa for P<3 GPa and 3.4 cm⁻¹/GPa for P>3 GPa. This change in the baric coefficient for Raman scattering and the available data on X-ray measurements of the compressibility of 2H-SnS₂up to 10 GPa suggest that the crystal structure undergoes a transformation at about 3 GPa.     

Electronic structure of linear chains of fullerenes

The band structure of linear chains of fullerene molecules is calculated as a function of the intermolecular π-electron overlap integral T, which increases under increasing external pressure. Chains consisting of neutral (C₆₀) and charged (C ₆₀ ⁻ ) molecules are studied. It is shown that there is a sharp transition from a metal (or narrow-gap semiconductor) to an insulator (with band gap ∼1 eV)with increasing T. The proposed model makes it possible to describe the formation of solid-carbon struc-tures, containing chains of covalently bound fullerene molecules, with different pressure-dependent semiconductor properties. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 8, 647–650 (25 April 1997)     

Quantum orientational melting and the phase diagram of a mesoscopic system

The “phase diagram” of a two-dimensional mesoscopic system of bosons is investigated. An example of such a system is a system of indirect magnetoexcitons in semiconductor double quantum dots. Quantum Monte Carlo calculations show the existence of quantum orientational melting. At zero (quite low) temperature, as quantum fluctuations of the particles intensify, two quantum disordering phenomena occur with increasing de Boer parameter q. First, at q≈10⁻³ the system passes to a radially ordered but orientationally disordered state, where different shells of a cluster rotate relative to one another. Then at q≈0.16 a transition to a superfluid state occurs. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 11, 817–822 (10 December 1998)     

Spontaneous magnetization of the vacuum and the strength of the magnetic field in the hot Universe

Intergalactic magnetic fields are assumed to have been spontaneously generated at the reheating stage of the early Universe, due to vacuum polarization of non-Abelian gauge fields at high temperature. The fact that the screening mass of this type of fields has zero value was discovered recently. A procedure to estimate their field strengths, B(T), at different temperatures is here developed, and the value B(T _ew)∼10¹⁴ G at the electroweak phase transition temperature is derived by taking into consideration the present value of the intergalactic magnetic field strength, B ₀∼10⁻¹⁵ G, coherent on the ∼1 Mpc scale. As a particular case, the standard model is considered and the field scale at high temperature is estimated in this case. Model-dependent properties of the phenomena under investigation are briefly discussed, too.