Acoustic anechoic layers with singly periodic array of scatterers: Computational methods,absorption mechanisms,and optimal design

The acoustic properties of anechoic layers with a singly periodic array of cylindrical scatterers are investigated. A method combined plane wave expansion and finite element analysis is extended for out-of-plane incidence. The reflection characteristics of the anechoic layers with cavities and locally resonant scatterers are discussed. The backing is a steel plate followed by an air half space. Under this approximate zero transmission backing condition, the reflection reduction is induced by the absorption enhancement. The absorption mechanism is explained by the scattering/absorption cross section of the isolated scatterer. Three types of resonant modes which can induce efficient absorption are revealed. Due to the fact that the frequencies of the resonant modes are related to the size of the scatterers, anechoic layers with scatterers of mixed size can broaden the absorption band. A genetic optimization algorithm is adopted to design the anechoic layer with scatterers of mixed size at a desired frequency band from 2 kHz to l0 kHz for normal incidence, and the influence of the incident angle is also discussed.     

Selective epitaxial growth of Ge nanodots with ultra-thin porous alumina membrane

We demonstrate that ultra-thin porous alumina membrane （PAM） is suitable for controlling of both size and site of Ge nanodots on Si substrates. Ge nanodots are grown on Si substrates with PAM as a template at different temperatures with molecular beam epitaxy （MBE） method. Ordered Ge nanodot arrays with uniform size and high density are obtained at 400 and 500 ℃. Spatial frequency spectrums transformed from scanning electron microscopy images through fast Fourier transform are utilized to analyze surface morphologies of Ge nanodots. The long-range well-ordered Ge nanodot arrays form a duplication of PAM at 400 ~C while the hexagonal packed Ge nanodot arrays are comolementarv with PAM at 500℃.     

High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers

Step-coupler waveguide-integrated Ge/Si avalanche photodetector(APD) is based on the vertical multimode interference(MMI), enhancing light scattering towards the Ge active region and creating mirror images of optical modes close to the Ge layer. However, there are two ineluctable contact angels between selectively epitaxial growth Ge and Si layers and selectively epitaxial growth Si and Si substrate, which has an effect on the coupling efficiency and the absorption of the photodetector. Therefore, step-coupled Ge/Si avalanche photodetectors with different step lengths are designed and fabricated. It is found that responsivity of APDs with step-coupler-length of 3.0 μm is 0.51 A/W at-6 V, 21% higher than that of 1.5 μm, which matches well with simulation absorption. The multiplication gain factor is as high as 50, and the maximum gain-bandwidth product reaches up to 376 GHz.     

Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects

We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30μm-diameter silicon on insulator （Ge-on-SOI） PIN photodetector. High-quality Ge absorption layer is epitaxially grown on SO1 substrate by the ultra-high vacuum chemical vapor deposition （UHV-CVD）. The photodiode exhibits a good responsivity of 0.20 A/W at a wavelength of 1550 nm. The dark current is as low as 0.36/aA at a reverse bias of 1 V, and the corresponding current density is about 51 mA/cm2. The detector with a diameter of 30 t.trn is measured at an incident light of 1.55 μm and 0.5 mW, and the 3-dB bandwidth is 7.39 GHz without bias and 13.9 GHz at a reverse bias of 3 V. The 16 devices show a good consistency.     

Tetragonal Distortion of GaN Epilayer with Multiple Buffer Layers on Si （111） Studied by RBS/Channelling and HRXRD

Rutherford backscattering （RBS）/channelling and high resolution x-ray diffraction （HRXRD） have been used to characterize the tetragonal distortion of a GaN epilayer with four Alx Ga1-xN and single AIN buffer layers grown on a Si （111） substrate by metal-organic vapour phase epitaxy （MOVPE）. The results show that a 1000nm GaN epilayer with a perfect crystal quality （Xmin = 1.54%） can be grown on the Si （111） substrate in virtue of multiple buffer layers. Using the RBS/channelling angular scan around an off-normal （1213） axis in the （1010） plane and the conventional HRXRD θ - 20 scans normal to GaN （0002） and （1122） planes at the 0° and 180° azimuth angles, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer and different buffer layers, can be obtained respectively. The two experiments are testified at one result, the tetragonal distortion of GaN epilayer is nearly to a fully relaxed （eT = 0）.     

Nonlinear and saturable absorption properties of PbS nanocrystalline thin films

The structural, morphological, optical, and nonlinear optical properties of a lead sulfide （PbS） thin film grown by chemical bath deposition （CBD） are investigated by X-ray diffraction （XRD）, scanning electron microscope （SEM）, ultraviolet-visible （UV-Vis）, and open aperture Z-scan experiments. The band gap energy of the PbS nanocrystalline film is 1.82 eV~ higher than that of bulk PbS at 300 K. The nonlinear absorption properties of the film are investigated using the open aperture Z-scan technique at 1064 nm and pulse durations of 4 ns and 65 ps. Intensity-dependent switching of the film from nonlinear absorption to saturable absorption is observed. The nonlinear absorption coefficient increases monotonically with increasing pulse duration from 65 ps to 4 ns.     

Optoelectronic Characteristics and Field Emission Properties of Indium-Doped Tin Oxide Nanowire Arrays

Optoelectronic characteristics of individual indium-doped tin oxide （In-SnO2） nanowires are investigated by performing transport measurement with UV illumination on/off circles. The current rapidly increases from 0.15 to 55 nA under UV illumination, which is ascribed to the increase of carrier concentration and the decrease of surface depletion. Emcient and stable field emission is obtained from In-Sn02 nanowire arrays. The current density is up to 17mA/cm^2 at 3.4 V/μm, and the fluctuations are less than 1%. The emission behaviour is perfectly in agreement with the Fowler Nordheim theory. Our results imply that In-SnO2 nanowires are promising candidates for UV detectors and field emission displays.     

Formation mechanism of Ge nanocrystals embedded in SiO2 studied by fluorescence x-ray absorption fine structure

This paper reports that the Ge nanocrystals embedded in SiO2 matrix are grown on Si（100） and quartz-glass substrates, and the formation mechanism is systematically studied by using fluorescence x-ray absorption fine structure （XAFS）. It is found that the formation of Ge nanocrystals strongly depends on the properties of substrate materials. In the as-prepared samples with Ge molar content of 60%, Ge atoms exist in amorphous Ge （about 36%） and GeO2 （about 24%） phases. At the annealing temperature of 1073 K, on the quartz-glass substrate Ge nanocrystals are generated from crystallization of amorphous Ge, rather than from the direct decomposition of GeO2 in the as-deposited sample. However, on the Si（100） substrate, the Ge nanocrystals are generated partly from crystallization of amorphous Ge, and partly from GeO2 phases through the permutation reaction with Si substrate. Quantitative analysis reveals that about 10% of GeO2 in the as-prepared sample are permuted with Si wafer to form Ge nanocrystals.     

GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy

InAs/GaSb superlattice （SL） short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs（O01） semi-insulating substrates. An interfacal misfit mode AISb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2 ML/S ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800 μm^2 without using passivation or antirefleetion coatings. Corresponding to the 50% cutoff wavelengths of 2.05μm at 77K and 2.25 μm at 300 K, the peak detectivities of the detectors are 4 × 10^9 cm·Hz^1/2/W at 77K and 2 × 10^8 cm·Hz1/2/W at 300K, respectively.     

Field Emission Properties of Ball-Like Nano-Carbon Thin Films Deposited on Mo Films with Accidented Topography

Ball-like nano-earbon thin films （BNCTs） are grown on Mo layers by microwave plasma chemical vapour deposition （MPCVD） system. The Mo layers are deposited on ceramic substrates by electron beam deposition method and are pretreated by ultrasonically scratching. The optimization effects of ultrasonically scratching pretreatment on the surface micro-structures of carbon films are studied. It is found from field-emission scanning electron microscope （FE-SEM） images and Raman spectra that the surface structures of the carbon films deposited on Mo pretreated are improved, which are composed of highly uniform nano-structured carbon balls with considerable disorder structures. Field emission （FE） measurements are carried out using a diode structure. The experimental results indicate that the BNCTs exhibit good FE properties, which have the turn on field of 1.56 V/μm, and the current density of 1.0mA/cm^2 at electric field of 4.0 V/μm, the uniformly distributed emission site density from a broad well-proportioned emission area of 4 cm^2 are also obtained. Linearity is observed in Fowler Nordheim （F N） plots in higher field region, and the possible emission mechanism of BNCTs is discussed.     

High-speed waveguide-integrated Ge/Si avalanche photodetector

Waveguide-integrated Ge/Si heterostructure avalanche photodetectors(APDs) were designed and fabricated using a CMOS-compatible process on 8-inch SOI substrate. The structure of the APD was designed as separate-absorption-chargemultiplication(SACM) using germanium and silicon as absorption region and multiplication region, respectively. The breakdown voltage(V_b) of such a device is 19 V at reverse bias and dark current appears to be 0.71 μA at 90% of the V_b. The device with a 10-μm length and 7-μm width of Ge layer shows a maximum 3-dB bandwidth of 17.8 GHz at the wavelength of 1550 nm. For the device with a 30-μm-length Ge region, gain-bandwidth product achieves 325 GHz.     

Reverse current reduction of Ge photodiodes on Si without post-growth annealing

A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Si layer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without post- growth annealing, the reverse current density is reduced to -10 mA/cm^2 at -1 V, i.e., over one order of magnitude lower than that of the reference photodiode without i-Si layer. However, the responsivity of the photodiodes is not severely compromised. This lowered-reverse-current is explained by band-pinning at the i-Si/i-Ge interface. Barrier lowering mechanism induced by E-field is also discussed. The presented ＂non-thermal＂ approach to reduce reverse current should accelerate electronics-photonics convergence by using Oe on the Si complementary metal oxide semiconductor （CMOS） platform.     

Gallium Nitride Room Temperature α Particle Detectors

Gallium Nitride （GaN） room temperature α particle detectors are fabricated and characterized, whose device structure is Schottky diode. The current-voltage （I- V） measurements reveal that the reverse breakdown voltage of the detectors is more than 200 V owing to the consummate fabrication processes, and that the Schottky barrier and ideal factor of the detectors are 0.64 eV and 1.02, respectively, calculated from the thermionic transmission model. ^241Am α particles pulse height spectra from the GaN detectors biased at -8 V is obviously one Gauss peak located at channel 44 with the full width at half maximum （FWHM） of 15.87 in channel. One of the main reasons for the relatively wider FWHM is that the air between the detectors and isotope could widen the spectrum.     

Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

We investigate negative bias temperature instability （NBTI） on high performance Ge p-channel metal-oxide- semiconductor field-effect transistors （pMOSFETs） with low-temperature Si2H6 passivation. The Ge pMOSFETs exhibit an effective hole mobility of 311 cm2/V.s at an inversion charge density of 2.5 × 1012 cm^-2. NBTI characterization is performed to investigate the linear transconductance （GM,lin） degradation and threshold voltage shift （△VTH） under NBT stress. Ge pMOSFETs with a lOyr lifetime at an operating voltage of -0.72 V are demonstrated. The impact of the Si2H6 passivation temperature is studied. As the passivation temperature increases from 350℃ to 550℃, the degradation of NBTI characteristics, e.g., GM,lin loss, △VTH and an operating voltage for a lifetime of lOyr, is observed.     

Optical and electrical characterizations of nanoparticle Cu2S thin films

Copper sulfide thin films are deposited onto different substrates at room temperature using the thermal evaporation technique. X-ray diffraction spectra show that the film has an orthorhombicchalcocite （7-Cu2S） phase. The atomic force microscopy images indicate that the film exhibits nanoparticles with an average size of nearly 44 nm. Specrtophotometric measurements for the transmittance and reflectance are carried out at normal incidence in a spectral wavelength range of 450 nm-2500 nm. The refractive index, n, as well as the absorption index, k is calculated. Some dispersion parameters are determined. The analyses of el and e2 reveal several absorption peaks. The analysis of the spectral behavior of the absorption coefficient, c~, in the absorption region reveals direct and indirect allowed transitions. The dark electrical resistivity is studied as a function of film thickness and temperature. Tellier＇s model is adopted for determining the mean free path and bulk resistance.     

Narrowband perfect terahertz absorber based on polar-dielectrics metasurface

We theoretically propose a narrowband perfect absorber metasurface(PAMS) based on surface phonon polaritons in the terahertz range. The PAMS has unit cell consisting of a silver biarc on the top, a thin polar-dielectric in the middle and a silver layer at the bottom. The phonon polaritons are excited at the interface between the silver biarc and the polar dielectric, and enhance the absorption of the PAMS. The absorption peak is at 36.813 μm and the full width half maximum(FWHM) is nearly 36 nm, independent of the polarization and incidence angle. The electric fields are located at the split of the biarc silver layer and the quality factor Q is 1150. The FWHM decreases with the decreasing split width. When the thickness of the bottom layer is larger than 50 nm, the narrow band and high absorption are insensitive to the thickness of those layers. The designed absorber may have useful applications in terahertz spectra such as energy harvesting, thermal emitter, and sensing.     

Study of strain and compostion of the self—organized GE dots by grazing incident X—ray diffraction

Grazing incident X-ray diffraction at different grazing angles for self-organized Ge dots grown on Si(001) are carried out and lattice constant expansions of 1.2?parallel to the surface as compared with the Si lattice are found within the Ge dots.A 3.1?lattice expansion of the Ge dots along the growth direction is also fund by ordinary X-ray(004) diffraction.According to the Poisson equation and the Vegard law,our results infer that the Ge dot should be a partially strain relaxed SiGe alloy with Ge content of abuot 55?2001 Elsevier Science B.V.All rights reserved.     

A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-Migned large-area multi-finger configuration power SiGe heterojunction bipolar transistor （HBT） device （with an emitter area of about 880μm^2） is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVcEo is 10 V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 10^17 cm^-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from OdBm to 21 dBm. A maximum output power of 29.9dBm （about 977mW） is obtained at an input power of 18.SdBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.     

Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs

Top-illuminated metamorphic InGaAs p-i-n photodetectors （PDs） with 50% cut-off wavelength of 1.75 μm at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 × 10^-6 A/cm^2 at 0 V bias and 2.24 × 10^-4 A/cm^2 at a reverse bias of 5 V. At a wavelength of 1.55 μm, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 μm diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.     

Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si（100） substrates

Epitaxial Ge1-xSnx alloys are grown separately on a Ge-buffer/Si(100) substrate and directly on a Si(100) substrate by molecular beam epitaxy (MBE) at low temperature. In the case of the Ge buffer/Si(100) substrate, a high crystalline quality strained Ge0.97Sn0.03 alloy is grown, with a χmin value of 6.7% measured by channeling and random Rutherford backscattering spectrometry (RBS), and a surface root-mean-square (RMS) roughness of 1.568 nm obtained by atomic force microscopy (AFM). In the case of the Si(100) substrate, strain-relaxed Ge0.97Sn0.03 alloys are epitaxially grown at 150°C-300°C, with the degree of strain relaxation being more than 96%. The X-ray diffraction (XRD) and AFM measurements demonstrate that the alloys each have a good crystalline quality and a relatively flat surface. The predominant defects accommodating the large misfit are Lomer edge dislocations at the interface, which are parallel to the interface plane and should not degrade electrical properties and device performance.