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1.
In this paper we report on inner ionization of Xen clusters (n = 55- 2171) in ultraintense Gaussian laser fields (peak intensity I = 1015- 1020 Wcm-2, pulse width τ= 25 fs, frequency 0.35 fs-1). The cluster inner ionization process is induced by the barrier suppression ionization (BSI) mechanism and by electron impact ionization (EII), which occurs sequentially with the BSI. We address electron impact ionization of clusters, which pertains to inelastic reactive processes of the high-energy (100 eV–1 keV per electron) nanoplasma. We utilized experimental data for the energy dependence of the electron impact ionization cross-sections of Xej+ (j = 1-10) ions, which were fit by an empirical three-parameter Lotz-type equation, to explore EII in clusters by molecular dynamics simulations. Information was obtained on the yields and time-resolved dynamics of the EII levels (i.e., number nimp of electrons per cluster atom) in the Xen clusters and their dependence on the laser intensity and cluster size. The relative long-time (t = 90 fs) yields for EII, nimp/nii (where nii is the total inner ionization yield) are rather low and increase with decreasing the laser intensity. In the intensity range I = 1015-1016 Wcm-2, nimp/nii = 0.21 for n = 2171 and nimp/nii = 0.09-0.14 for n = 459, while for I = 1018-1020 Wcm-2, nimp/nii = 0.01-0.05. The difference Δnimp between the EII yield at long time and at the termination of the laser pulse reflects on ionization dynamics by the nanoplasma when the laser pulse is switched off. For Xe2171 in the lower intensity domain, Δ nimp = 0.9 at I = 1015 Wcm-2 and Δnimp = 0.4 at 1016 Wcm-2, reflecting on EII by the persistent nanoplasma under “laser free” conditions, while in the higher intensity domain of I = 1017 - 1018 Wcm-2, Δnimp is negligibly small due to the depletion of the transient nanoplasma.  相似文献   

2.
We present a theoretical study of the short-time relaxation of clusters in response to ultrafast excitations using femtosecond laser pulses. We analyze the excitation of different types of clusters (Hgn, Agn, Sin, C60 and Xen) and classify the relaxation dynamics in three different regimes, depending on the intensity of the exciting laser pulse. For low-intensity pulses (I<1012 W/cm2) we determine the time-dependent structural changes of clusters upon ultrashort ionization and photodetachment. We also study the laser-induced non-equilibrium fragmentation and melting of Sin and C60 clusters, which occurs for moderate laser intensities, as a function of the pulse duration and energy. As an example for the case of high intensities (I>1015 W/cm2), the explosion of clusters under the action of very intense ultrashort laser fields is described. Received: 26 November 1999 / Published online: 2 August 2000  相似文献   

3.
We analyze the properties and the character of the evolution of an electron subsystem of a large cluster (with a number of atoms n~104?106) interacting with a short laser pulse of high intensity (1017?1019 W/cm2). As a result of ionization in a strong laser field, cluster atoms are converted into multicharged ions, part of the electrons being formed leaves the cluster, and the other electrons move in a self-consistent field of the charged cluster and the laser wave. It is shown that electron-electron collisions are inessential both during the cluster irradiation by the laser pulse and in the course of cluster expansion; the electron distribution in the cluster therefore does not transform into the Maxwell distribution even during cluster expansion. During cluster expansion, the Coulomb field of a cluster charge acts on cluster ions more strongly than the pressure resulting from electron-ion collisions. In addition, bound electrons remain inside the cluster in the course of its expansion, and cluster expansion therefore does not lead to additional cluster ionization.  相似文献   

4.
A theory is developed for calculating the charge composition of a cluster plasma produced upon irradiation of large atomic clusters by the field of a superatomic femtosecond laser pulse. The theory is based on the overbarrier process of a successive multiple internal ionization of atomic ions inside a cluster accompanied by the external field ionization. Collision ionization is also taken into account in the calculations. The theory is illustrated by the example of a cluster consisting of 106 xenon atoms irradiated by a 50-fs laser pulse with a peak intensity of 2×1018 W/cm2. In this case, the Xe26+ ions dominate. The amounts of atomic xenon ions with multiplicity up to 31 are calculated.  相似文献   

5.
We present a theoretical and computational study of the properties and the response of the nanoplasma and of outer ionization in Xen clusters (n = 55–2171, initial cluster radius R0 = 8.7–31.0 ?) driven by ultraintense near-infrared laser fields (peak intensity IM = 1015–1020 Wcm-2, temporal pulse length τ= 10–100 fs, and frequency ν= 0.35 fs-1). The positively charged high-energy nanoplasma produced by inner ionization nearly follows the oscillations of the fs laser pulse and can either be persistent (at lower intensities of IM = 1015–1016 Wcm-2 and/or for larger cluster sizes, where the electron energy distribution is nearly thermal) or transient (at higher intensities of IM = 1018–1020 Wcm-2 and/or for smaller cluster sizes). The nanoplasma is depleted by outer ionization that was semiquantitatively described by the cluster barrier suppression electrostatic model, which accounts for the cluster size, laser intensity and pulse length dependence of the outer ionization yield. The electrostatic model was further utilized for estimates of the laser intensity and pulse width dependence of the border radius R0 (I) for the attainment of complete outer ionization at , while at R0 > R0 (I) a persistent nanoplasma prevails. R0 (I) establishes an interrelationship between electron dynamics and nuclear Coulomb explosion dynamics in ultraintense laser-cluster interactions.  相似文献   

6.
Optimal regimes for electrode conditioning in a vacuum by applying voltage pulses with different waveforms are considered. For nanosecond pulses with a constant duration (t p = const), the impulse dielectric strength for an oblique voltage wave is shown to be more than four times higher than for a rectangular pulse with an infinitely short leading-edge duration. The dependences of the dielectric strength on the conditioning pulse duration in the range 10?10 < t p < 10?3 s for pulses with different rise rates are obtained. The dielectric strength increases from 2 × 107 V/m for microsecond pulses to 1010 V/m for subnanosecond pulses.  相似文献   

7.
Electron-positron pair production from vacuum in an electromagnetic field created by two counterpropagating focused laser pulses interacting with each other is analyzed. The dependence of the number of produced pairs on the intensity of a laser pulse and the focusing parameter is studied with a realistic three-dimensional model of the electromagnetic field of the focused wave, which is an exact solution of the Maxwell equations. It has been shown that e+e? pair production can be experimentally observed when the intensity of each beam is I~1026 W/cm2, which is two orders of magnitude lower than that for a single pulse.  相似文献   

8.
实验研究了CO2分子在飞秒强激光脉冲作用下的动力学过程,包括分子取向,隧穿电离和库仑爆炸,激光强度从1×1013W/cm2变化到6×1014W/cm2. 当激光强度小于分子的电离阈值时,CO2分子的非绝热转动激发形成一个相干转动波包,波包演化导致分子沿激光电场方向取向. 激光脉冲结束后,分子取向可以周期性地再现,利用另一束激光可以对取向结构进一步进行修饰. 当激光强度大于分子  相似文献   

9.
The results of a study of the generation of harmonics from a laser plasma resulting from the interaction of radiation of femtosecond duration (λ=1.06 μm, t=475 fs, and I~2×1017 W cm?2) with aluminum targets are presented. The observed frequency shift of harmonics to the short-wavelength region (1.6 and 5.1 nm for the second and fifth harmonics, respectively) is determined by a collisionless absorption resulting from an anomalous skin effect. The efficiencies of conversion into the second and fifth harmonics in an s-polarized pumping field were lower than the conversion efficiencies in a p-polarized pumping field by a factor of eight and a factor of two, respectively (for intensities I<1017 W cm?2). With a further increase in the pumping intensity, these values decreased to 0.8 and 0.5, respectively. The mechanisms of such behavior of the conversion process are considered.  相似文献   

10.
Processes of ionization of shallow acceptor centers (ACs) in silicon are studied. In crystalline silicon samples with phosphorus (1.6×1013, 2.7×1013, and 2.3×1015cm?3) and boron (1.3×1015cm?3) impurities, μAl impurity atoms were produced by implantation of negative muons. It is found that thermal ionization is the main mechanism for ionizing the Al acceptor impurity in both p-type and n-type silicon with an impurity concentration of ?1015cm?3 at T>45 K. The thermal ionization rate of Al ACs in Si varies from ~105 to ~106s?1 in the temperature range 45–55 K.  相似文献   

11.
We report here an experimental study of the ionic keV X-ray line emission from magnesium plasma produced by laser pulses of three widely different pulse durations (FWHM) of 45 fs, 25 ps and 3 ns, at a constant laser fluence of ∼1.5 × 104 J cm − 2. It is observed that the X-ray yield of the resonance lines from the higher ionization states such as H- and He-like ions decreases on decreasing the laser pulse duration, even though the peak laser intensities of 3.5 × 1017 W cm − 2 for the 45 fs pulses and 6.2 × 1014 W cm − 2 for the 25 ps pulses are much higher than 5 × 1012 W cm − 2 for the 3 ns laser pulse. The results were explained in terms of the ionization equilibrium time for different ionization states in the heated plasma. The study can be useful to make optimum choice of the laser pulse duration to produce short pulse intense X-ray line emission from the plasma and to get the knowledge of the degree of ionization in the plasma.  相似文献   

12.
We demonstrate theoretically that an efficient field-free molecular orientation driven by the positively chirped laser pulse whose frequency is in the terahertz regime can be achieved, taking the LiH molecule for example. Exact numerical calculations are performed by solving the time-dependent Schrödinger equation including the vibrational and rotational degrees of freedom. The maximal orientation degree of the LiH molecule  |  ? cosθ ?  |  max  = 0.85 under the action of chirped laser pulse with the peak intensity of 4.78 × 108 W/cm2 at T = 0 K, which is larger than  |  ? cosθ ?  |  max =0.75 driven by the half-cycle laser pulse with the same intensity. The molecular orientation degree decreases with the increase of temperature.  相似文献   

13.
The yield of neutrons from the thermonuclear-fusion reaction D(d, n)3He induced in a thin skin layer by the interaction of a high-intensity laser pulse of picosecond duration with thin TiD2 foils is calculated. A multiple ionization of titanium atoms at the leading edge of the laser pulse is considered. The heating of free electrons proceeds via induced inverse bremsstrahlung in elastic electron scattering on multiply charged titanium ions. The electron temperature is calculated. It proves to be about 10 keV at the laser-pulse intensity of 5×1018 W/cm2 at the peak. The neutron yield is estimated at 104 per laser pulse. These results are in qualitative agreement with experimental data.  相似文献   

14.
Photoconductivity has been detected in CaWO4-single crystals. By means of a pulse method the mobility of the charge carriers could be determined. The very small mobilities (Μ +=0.1 cm2/Vs,Μ ?≈ 5 cm2/Vs) are explained in the picture of “small polarons”.  相似文献   

15.
The frequency (ν = 10?1–107 Hz) dependences σ(ν) of the conductivity of single crystals of the Pb0.67Cd0.33F2 superionic conductor with the fluorite-type structure (CaF2) in the temperature range of 132–395 K have been studied. The dependences σ(ν) have been discussed in the framework of the hopping relaxation of ionic carriers, which are mobile anions F?. From experimental curves σ(ν), the direct-current (dc) conductivity σdc and the average charge carrier hopping frequency νh have been determined. This has made it possible to calculate the charge carrier mobility μmob and charge carrier concentration n mob in these crystals. At room temperature (293 K), the electrical parameters are σdc = 1.6 × 10?4 S/cm, νh = 2.7 × 107 Hz, μmob = 2.0 × 10?7 cm2/(s V), and n mob = 5.1 × 1021 cm?3.  相似文献   

16.
The relaxation electronic phenomena occurring in TlGa0.99Fe0.01Se2 single crystals in an external dc electric field are investigated. It is established that these phenomena are caused by electric charges accumulated in the single crystals. The charge relaxation at different electric field strengths and temperatures, the hysteresis of the current-voltage characteristic, and the electric charge accumulated in the TlGa0.99Fe0.01Se2 single crystals are consistent with the relay-race mechanism of transfer of a charge generated at deep-lying energy levels in the band gap due to the injection of charge carriers from the electric contact into the crystal. The parameters characterizing the electronic phenomena observed in the TlGa0.99Fe0.01Se2 single crystals are determined to be as follows: the effective mobility of charge carriers transferred by deep-lying centers μf=5.6×10?2 cm2/(V s) at 300 K and the activation energy of charge transfer ΔE=0.54 eV, the contact capacitance of the sample C c =5×10?8 F, the localization length of charge carriers in the crystal d c =1.17×10?6 cm, the electric charge time constant of the contact τ=15 s, the time a charge carrier takes to travel through the sample t t =1.8×10?3 s, and the activation energy of traps responsible for charge relaxation ΔE σ = ΔE Q = 0.58 eV.  相似文献   

17.
Nonlinear absorption of 30-ps light pulses with λ = 560 nm in AgBr nanocrystals is experimentally studied in the range of intensities 108–1010 W/cm2. The results of a theoretical analysis show that the absorption is related to direct interband n-photon transitions. With increasing light intensity j, the number n increases and the region of the k-space changes for the transitions predominantly contributing to the absorption. It is shown that, due to specific features of the AgBr electronic band structure, the probabilities of two-photon transitions for the light at λ = 560 nm are anomalously low, while those of four-photon transitions are anomalously high. In addition, the increase in the two-photon transition rate with increasing intensity is blocked at j ? 108 W/cm2 due to the resonant optical Stark effect and due to a gap arising in the band spectrum, rearranged because of the interaction with light.  相似文献   

18.
Interaction between high-power ultrashort laser pulse and giant clusters (microdroplets) consisting of 109 to 1010 atoms is considered. The microdroplet size is comparable to the laser wavelength. A model of the evolution of a microdroplet plasma induced by a high-power laser pulse is developed, and the processes taking place after interaction with the pulse are analyzed. It is shown theoretically that the plasma is superheated: its temperature is approximately equal to the ionization potential of an ion having a typical charge. The microdroplet plasma parameters are independent of the pulse shape and duration. The theoretical conclusions are supported by experimental studies of x-ray spectra conducted at JAERI, where a 100-terawatt Ti-sapphire laser system was used to irradiate krypton and xenon microdroplets by laser pulses with pulse widths of 30 to 500 fs and intensities of 6×1016 to 2×1019W/cm2.  相似文献   

19.
Propagation of nonequilibrium acoustic phonons in samples of high-purity CdTe (impurity content ~1016 cm?3) was studied using the heat pulse technique under pulsed photoexcitation. An analysis of nonequilibrium phonon propagation made by comparing the experimental response with Monte Carlo calculations assuming samples to be without twins provided an estimate for the spontaneous anharmonic phonon decay constant AL=2×10?52 s?1 Hz?5. The probability of free phonon transit through a twin boundary in a sample with twin structure was estimated as AC=0.96.  相似文献   

20.
It is revealed that TlS single crystals exhibit a variable range hopping conduction along a normal to their natural layers at temperatures T ≤ 230 K in a dc electric field and a nonactivated hopping conduction at low temperatures in strong electric fields. Estimates are made for the density of states near the Fermi level (N F = 2.8 × 1020 eV?1 cm?3 and their energy spread (ΔW = 0.02 eV), the localization radius (a = 33 Å), the average jump distance in the region of activated (R av(T) = 40 Å) and nonactivated (R av(F) = 78 Å) hopping conduction, and also the drop in the charge carrier potential energy along the jump distance in an electric field F: eFR = 0.006 and 0.009 eV at F = 7.50 × 103 and 1.25 × 104 V/cm, respectively.  相似文献   

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