Miniaturized electrochemical sensors and their point-of-care applications

Most of the current analytical methods depend largely on laboratory-based analytical techniques that require expensive and bullky equipment,potentially incur costly testing,and involve lengthy detection processes.With increasing requirements for point-of-care testing(POCT),more attention has been paid to miniaturized analytical devices.Miniaturized electrochemical(MEC)sensors,including different material-based MEC sensors(such as DNA-,paper-,and screen electrode-based),have been in strong demand in analytical science due to their easy operation,portability,high sensitivity,as well as their short analysis time.They have been applied for the detection of trace amounts of target through measuring changes in electrochemical signal,such as current,voltage,potential,or impedance,due to the oxidation/reduction of chemical/biological molecules with the help of electrodes and electrochemical units.MEC sensors present great potential for the detection of targets including small organic molecules,metal ions,and biomolecules.In recent years,MEC sensors have been broadly applied to POCT in various fields,including health care,food safety,and environmental monitoring,owing to the excellent advantages of electrochemical(EC)technologies.This review summarized the state-of-the-art advancements on various types of MEC sensors and their applications in POCT.Furthermore,the future perspectives,opportunities,and challenges in this field are also discussed.     

等浓度的氯化铵和硫酸铵溶液哪个pH高

有中学化学参考资料题:0.10 mol/L的NH4Cl和(NH4)2SO4溶液哪个pH值高?这似乎是个中学生可做的简单题目,仔细考虑不是如此.如果简单地认为盐酸和硫酸都是强酸,而硫酸是二元酸,硫酸铵溶液中铵盐浓度为0.20 mol/L,那么NH4Cl溶液pH高,那是不妥的.硫酸是二元酸,第一个氢离子能完全电离,第二个氢离子部分电离,如此考虑情况怎么样呢?是不是答案发生变化?这要通过计算来说明.     

Machine Learning towards Screening Solid-state Lithium Ion Conductors

Machine learning is an emerging method to discover new materials with specific characteristics.An unsupervised machine learning research is highlighted to discover new potential lithium ionic conductors by screening and clustering lithium compounds,providing inspirations for the development of solid-state electrolytes and practical batteries.     

Vanadium-based polyanionic compounds as cathode materials for sodium-ion batteries:Toward high-energy and high-power applications

Sodium ion batteries(SIBs)have been regarded as one of the alternatives to lithium ion batteries owing to their wide availability and significantly low cost of sodium sources.However,they face serious challenges of low energy&power density and short cycling lifespan owing to the heavy mass and large radius of Na⁺.Vanadium-based polyanionic compounds have advantageous characteristic of high operating voltage,high ionic conductivity and robust structural framework,which is conducive to their high energy&power density and long lifespan for SIBs.In this review,we will overview the latest V-based polyanionic compounds,along with the respective characteristic from the intrinsic crystal structure to performance presentation and improvement for SIBs.One of the most important aspect is to discover the essential problems existed in the present V-based polyanionic compounds for high-energy&power applications,and point out most suitable solutions from the crystal structure modulation,interface tailoring and electrode configuration design.Moreover,some scientific issues of V-based polyanionic compounds shall be also proposed and related future direction shall be provided.We believe that this review can serve as a motivation for further development of novel V-based polyanionic compounds and drive them toward high energy&power applications in the near future.     

Enhanced efficiency and stability in Sn-based perovskite solar cells with secondary crystallization growth

The conversion efficiencies reported for Tin(Sn)halide-based perovskite solar cells(PSCs)fall a large gap behind those of lead halide-based PSCs,mainly because of poor film quality of the former.Here we report an efficient strategy based on a simple secondary crystallization growth(SCG)technique to improve film quality for tin halide-based PSCs by applying a series of functional amine chlorides on the perovskite surface.They were discovered to enhance the film crystallinity and suppress the oxidation of Sn²⁺remarkably,hence reduce trap state density and non-irradiative recombination in the absorber films.Furthermore,the SCG film holds the band levels matching better with carrier transport layers and herein favoring charge extraction at the device interfaces.Consequently,a champion device efficiency of 8.07% was achieved alo ng with significant enhancements in VOC and JSC,in contrast to 5.35% of the control device value.Moreover,the SCG film-based devices also exhibit superior stability comparing with the control one.This work explicitly paves a novel and general strategy for developing high performance lead-free PSCs.     

Total synthesis of TRADD death domain with arginine N-GlcNAcylation by hydrazide-based native chemical ligation

TNFR1-associated death domain protein(TRADD)with arginine N-GlcNAcylation is a novel and structurally unique posttranslational modification(PTM)glycoprotein that blocks the formation of death-inducing signaling complex(DISC),orchestrating host nuclear factorκB(NF-κB)signaling in entero-pathogenic Escherichia coli(EPEC)-infected cells.This particular glycosylated modification plays an extremely vital role for the effective colonization and pathogenesis of pathogens in the gut.Herein we describe the total synthesis of TRADD death domain(residues 195-312)with arginine235 NGlcNAcylation(Arg-GIcNAc TRADD(195-312)).Two longish peptidyl fragments of the wild-type primary sequence were obtained by robust,microwave-assisted,highly efficient,solid-phase peptide synthesis(SPPS),the N-GlcNAcylated sector was built by total synthesis and attached specifically to resinbound peptide with an unprotected ornithine residue via silver-promoted on-resin guanidinylation,ArgGlcNAc TRADD(195-312)was constructed by hydrazide-based native chemical ligation(NCL).The facile synthetic strategy is expected to be generally applicable for the rapid synthesis of other proteins with Arg-GIcNAc modification and to pave the way for the related chemically biological study.     

Steam activation of Fe-N-C catalyst for advanced power performance of alkaline hydrazine fuel cells

Alkaline hydrazine liquid fuel cells(AHFC) have been highlighted in terms of high power performance with non-precious metal catalysts.Although Fe-N-C is a promising non-Pt electrocatalyst for oxygen reduction reaction(ORR),the surface density of the active site is very low and the catalyst layer should be thick to acquire the necessary number of catalytic active sites.With this thick catalyst layer,it is important to have an optimum pore structure for effective reactant conveyance to active sites and an interface structure for faster charge transfer.Herein,we prepare a Fe-N-C catalyst with magnetite particles and hierarchical pore structure by steam activation.The steam activation process significantly improves the power performance of the AHFC as indicated by the lower IR and activation voltage losses.Based on a systematic characterization,we found that hierarchical pore structures improve the catalyst utilization efficiency of the AHFCs,and magnetite nanoparticles act as surface modifiers to reduce the interracial resistance between the electrode and the ion-exchange membrane.     

Surface defect-rich ceria quantum dots anchored on sulfur-doped carbon nitride nanotubes with enhanced charge separation for solar hydrogen production

Designing defect-engineered semiconductor heterojunctions can effectively promote the charge carrier separation.Herein,novel ceria(CeO2) quantum dots(QDs) decorated sulfur-doped carbon nitride nanotubes(SCN NTs) were synthesized via a thermal polycondensation coupled in situ depositionprecipitation method without use of template or surfactant.The structure and morphology studies indicate that ultrafine CeO2 QDs are well distributed inside and outside of SCN NTs offering highly dispersed active sites and a large contact interface between two components.This leads to the promoted formation of rich Ce³⁺ ion and oxygen vacancies as confirmed by XPS.The photocatalytic performance can be facilely modulated by the content of CeO2 QDs introduced in SCN matrix while bare CeO2 does not show activity of hydrogen production.The optimal catalyst with 10% of CeO2 loading yields a hydrogen evolution rate of 2923.8 μmol h-1 g-1 under visible light,remarkably higher than that of bare SCN and their physical mixtures.Further studies reveal that the abundant surface defects and the created 0 D/1 D junctions play a critical role in improving the separation and transfer of charge carriers,leading to superior solar hydrogen production and good stability.     

Superfast and solvent-free core-shell assembly of sulfur/carbon active particles by hail-inspired nanostorm technology for high-energy-density Li-S batteries

The demand on low-carbon emission fabrication technologies for energy storage materials is increasing dramatically with the global interest on carbon neutrality.As a promising active material for metal-sulfur batteries,sulfur is of great interest due to its high-energy-density and abundance.However,there is a lack of industry-friendly and low-carbon fabrication strategies for high-performance sulfur-based active particles,which,however,is in critical need by their practical success.Herein,based on a hail-inspired sulfur nano-storm(HSN)technology developed in our lab,we report an energy-saving,solvent-free strategy for producing core-shell sulfur/carbon electrode particles(CNT@AC-S)in minutes.The fabrication of the CNT@AC-S electrode particles only involves low-cost sulfur blocks,commercial carbon nanotubes(CNT)and activated carbon(AC)micro-particles with high specific surface area.Based on the above core-shell CNT@AC-S particles,sulfur cathode with a high sulfur-loading of 9.2 mg cm^-2 delivers a stable area capacity of 6.6 mAh cm^-2 over 100 cycles.Furthermore,even for sulfur cathode with a super-high sulfur content(72 wt%over the whole electrode),it still delivers a high area capacity of 9 mAh cm^-2 over50 cycles in a quasi-lean electrolyte condition.In a nutshell,this study brings a green and industryfriendly fabrication strategy for cost-effective production of rationally designed S-rich electrode particles.     

Unraveling the stabilization mechanism of solid electrolyte interface on ZnSe by rGO in sodium ion battery

Transition metal selenides have been widely studied as anode materials of sodium ion batteries(SIBs),however,the investigation of solid-electrolyte-interface(SEI)on these materials,which is critical to the electrochemical performance of SIBs,remains at its infancy.Here in this paper,ZnSe@C nanoparticles were prepared from ZIF-8 and the SEI layers on these electrodes with and without reduced graphene oxide(rGO)layers were examined in details by X-ray photoelectron spectroscopies at varied charged/discharged states.It is observed that fast and complicated electrolyte decomposition reactions on ZnSe@C leads to quite thick SEI film and intercalation of solvated sodium ions through such thick SEI film results in slow ion diffusion kinetics and unstable electrode structure.However,the presence of rGO could efficiently suppress the decomposition of electrolyte,thus thin and stable SEI film was formed.ZnSe@C electrodes wrapped by rGO demonstrates enhanced interfacial charge transfer kinetics and high electrochemical performance,a capacity retention of 96.4%,after 1000 cycles at 5 A/g.This study might offer a simple avenue for the designing high performance anode materials through manipulation of SEI film.     

计算机硬盘基片CMP中表面膜特性的分析研究

目前,普遍采用化学机械抛光(Chemical-mechanical polishing,CMP)技术对计算机硬盘基片(盘片)表面进行原子级平整。CMP加工中,盘片表面膜及其特性对CMP过程及CMP性能具有关键作用。本文分别采用俄歇能谱(AES)、X射线光电子能谱(XPS)、扫描电镜(SEM)、纳米硬度计、电化学极化法等分析手段对盘片表面物理、化学及机械特性进行了研究,发现盘片CMP后表面发生了氧化,氧化膜在盘片的表层,厚度在纳米量级,氧化产物为Ni(OH)₂;氧化膜为较软的、疏松的、粗糙的多孔结构;氧化膜的存在加快了盘片表面的腐蚀磨损。结合盘片CMP试验结果,推测盘片的CMP机理为盘片表面氧化生成机械强度较低的Ni(OH)₂氧化膜及随后氧化膜的机械和化学去除,二者的不断循环实现表面的全局平面化。     

Strategies for Optimal Chemical Mechanical Polishing (CMP) Slurry Design

Abstract

Chemical mechanical polishing (CMP) has become the preferred route for achieving wafer‐level global planarization in microelectronics device manufacturing. However, the micro‐ to molecular‐level mechanisms that control its performance and optimization are not well understood. In CMP, complex slurry chemistries react with the first few atomic layers on the wafer surfaces forming a chemically modified film. This film is subsequently mechanically abraded by nanosized slurry particles to achieve local and global planarity for multi‐level metalization. For optimal CMP performance, high material removal rates with minimal surface defectivity are required. This can be achieved by controlling the extent of interparticle and particle–substrate interactions, which are facilitated through the manipulation of the slurry composition, solution chemistry, as well as operational parameters. Interparticle interactions must be engineered to maintain slurry stability to minimize the number and extent of surface defects during polishing while maintaining adequate removal rates. The fundamental considerations, which are necessary for the development of high performance CMP slurries, are discussed in this article through model silica CMP systems.     

Chemical Mechanical Planarization (CMP) for Microelectronic Applications

Surface planarity is of paramount importance in microelectronics. Chemical Mechanical Polishing (CMP) is the most viable approach to address the planarity issues during the fabrication of advanced semiconductor devices. With the integration of copper as interconnect and low k materials as dielectric, the CMP community is facing an ever increasing demand on reducing defectivity without scarifying production throughput. Key issues in CMP today include reduction of surface defectivity and enhancement of planarization efficiency. More specifically, the polished surface should be free of defects such as scratches, pits, corrosion spots, and residue particles. To accomplish these goals, we have investigated a wide range of pathways including reduction of oversized particles,use of unique abrasives such as functionalized nanoparticles, and development of polishing solution without abrasive particles.In this presentation, some fundamental aspects of the CMP process will be given first.Several academic and industrial examples will be used to illustrate the issues and challenges during the implementation of various slurry designs into the CMP processes.     

弱碱性介质中氯离子对铜电极腐蚀行为的影响

应用循环伏安法、X射线光电子能谱法、电化学阻抗谱法以及现场椭圆偏光法研究了在弱碱性介质中添加Cl－对铜电极腐蚀行为的影响.结果表明, Cl－的加入能加剧铜电极的腐蚀,使腐蚀电流以及现场椭圆偏振参数Δ的变化范围都增大1个数量级, Cl－对Cu2O的掺杂将使铜电极的表面膜变得疏松,膜的耐蚀性变差.椭圆偏光实验不仅与电化学和能谱实验的结果一致,而且还能定性地、清楚地分辨出铜电极腐蚀过程中Cu2O的生成、Cl－对Cu2O的掺杂、CuO的生成等不同阶段;同时,利用恰当的模型还能定量地确定各个阶段铜电极表面膜的组成、厚度的变化,从而为研究铜电极的腐蚀与防护机理提供更多有用信息.     

钨的化学机械抛光过程中TiN-W电偶的腐蚀行为(英文)

化学机械抛光 (CMP)技术是同时利用化学和机械作用来获得固体表面亚微米尺度上平整性非常有效的方法 ,从 90年代初期起已成为制备高质量镜头和镜面及集成电路制造过程中硅片表面预处理工艺中最常用的技术之一 .钨的化学机械抛光是用钨坯获得硅片球面平整度的重要工艺 .其过程实际上是先将钨沉积到硅上已有的薄粘附层 -氮化钛上 ,然后进行化学机械抛光 .当抛光阶段接近终了时 ,氮化钛和钨表面将同时暴露在化学抛光液中形成电偶对 ,并在界面上发生腐蚀行为 ,从而影响硅片的球面平整度 ,降低半导体器件的性能与可靠性 .本文通过采用电化学直流极化技术 ,分别获得钨与氮化钛在 0 .0 1mol/LKNO3溶液中或含有三种典型的研磨剂 (H2 O2 ,KIO3,Fe(NO3) 3)溶液中的极化曲线 ,同时设计了一种特殊的电解槽以测量钨和氮化钛之间相互作用的电流 ,初步研究了 patterned硅片上钨和氮化钛界面形成电偶对时的腐蚀行为 .根据所测的钨和氮化钛电位可知 ,当钨和氮化钛表面同时暴露在抛光液中时将形成电偶对 ,氮化钛成为阴极 ,钨为阳极 ,并于界面发生电化学反应 ,表面的不均匀腐蚀将造成硅片平整度的降低 .结果表明 ,当溶液中含有H2 O2 时钨和氮化钛界面的腐蚀速度最大 ,而当溶液中含有Fe(NO3) 3时的钨和氮化钛界面则几乎不发     

Electrochemical characterization of copper chemical mechanical polishing in l-glutamic acid–hydrogen peroxide-based slurries

The effect of l-glutamic acid as complexing agent in the presence of hydrogen peroxide as oxidizer in copper chemical mechanical polishing (CMP) slurry is investigated. In the CMP process, the work surface is moved against a pad, with slurry flowing between the surface and the pad. The polish rate was found to be stable over a wide range of hydrogen peroxide concentration. High concentration of either l-glutamic acid or hydrogen peroxide leads to a reduction in polish rate, but a high concentration of both chemicals does not reduce the polish rate. In the absence of hydrogen peroxide, the Cu polish rate was 0 for all the l-glutamic acid concentrations investigated. However, potentiodynamic polarization curves do not show any sign of passivation when l-glutamic acid was present in the solution. In situ open circuit potential measurements show that copper redox reactions as well as hydrogen peroxide redox reactions contribute in determining the electrochemical behavior. We propose that l-glutamic acid inhibits the copper dissolution by adsorption onto the metallic copper, but enhances copper dissolution by complexing copper ions. The results show that it is possible to conduct controllable copper CMP in mildly acidic slurries with hydrogen peroxide as oxidizer and l-glutamic acid as complexing agent.     

Etchant solutions for the removal of Cu(0) in a supercritical CO2-based "dry" chemical mechanical planarization process for device fabrication

The microelectronics industry is focused on increasing chip complexity, improving the density of electron carriers, and decreasing the dimensions of the interconnects into the sub-0.25 mum regime while maintaining high aspect ratios. Water-based chemical mechanical planarization or polishing (CMP) faces several technical and environmental challenges. Condensed CO2 has significant potential for replacing current CMP solvents as a "dry" etching medium because of its unique properties. In working toward a condensed CO2-based CMP process, we have successfully investigated the oxidation and chelation of solid copper metal in liquid and supercritical CO2 using ethyl peroxydicarbonate and a beta-diketone chelating agent.     

Fe基合金钝化膜点蚀敏感性的电化学研究

应用电位扫描、交流阻抗、电化学噪声等方法研究Fe及其合金在中性水溶液中钝化膜的形成过程、电子性质和点蚀敏感性以及不同微组织结构间的相互作用.结果表明:由Mott-Schot tky关系式确定钝化膜的电子性质仅限于较窄的低电位范围;在较高电位下,电容倒数与电位的线性关系当归因于钝化膜厚度的变化;反映钝化膜缺陷的电子性质与合金的点蚀敏感性有关,钝化膜电子供给体浓度越高,点蚀倾向越强。钝化膜的电子性质受钝化膜形成电位、钝化剂种类以及合金的微组织结构影响;不同微组织结构之间存在相互作用,这种相互作用能够诱导缺陷较大的一方发生点蚀。铁素体与珠光体和/或马素体相互作用时,点蚀在铁素体形成和发展.     

Water-in-Oil Dispersion for KH2PO4 (KDP) Crystal CMP

Chemical mechanical polishing (CMP) has become an essential process in the manufacturing of advanced microelectronic devices. More recently, CMP has also been applied to the process of other advanced materials such as optical crystals and thin films. Typically, a CMP slurry is formulated as an aqueous dispersion which may contain abrasive particles, activating agent, passivating agent, surfactant, etc. Due to its sensitivity to water, hygroscopic crystals must not be processed with aqueous based slurry. In this study, a new abrasive-free system based on water-in-oil microemulsion was investigated to address this challenge. More specifically, a dispersion made of dodecanol, Triton X-100, and water was studied for its potential application in KH₂PO₄(KDP) crystal processing. In this unique polishing system, water molecules are caged into micelles so the reaction between KDP and water is controlled. As a result, the static etch rate of the substrate surface is minimized. During polishing process, the frictional action between crystal surface and pad leads to the release of reactive water molecules. The material removal is, thus, enhanced. In this paper, the techniques used to characterize such abrasive-free system were first introduced. The water-in-oil structures were characterized and confirmed by conductivity, dynamic lighting scattering and dynamic nuclear magnetic resonance (NMR) measurements. The performance of this system on the process of KDP crystals was then discussed. The static etch rate and the material removal rate in polishing process were measured under various conditions in order to elucidate the polishing mechanism. Finally, the potential application of such a novel nonaqueous polishing system in CMP beyond KDP crystals is discussed.     

Role of interaction forces in controlling the stability and polishing performance of CMP slurries

Chemical mechanical polishing (CMP) is an essential step in metal and dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. These requirements are met through the control of chemical and mechanical interactions during the polishing process by engineering the slurry chemistry, particulate properties, and stability. In this study, the performance of surfactant-stabilized silica CMP slurries at high pH and high ionic strengths are investigated with particular emphasis on the particle-particle and particle-substrate interactions. It is shown that for the design of consistently high performing slurries, stability of abrasive particles must be achieved under the dynamic processing conditions of CMP while maintaining sufficient pad-particle-wafer interactions.