δ-(Zn,Cr)S(111)表面上的Dzyaloshinsky-Moriya作用:第一性原理计算

根据密度泛函理论的第一性原理计算了具有非中心反演对称的异质结δ-(Zn,Cr)S(111)体系的原子结构和电子结构.Cr原子之间通过第一层S原子传递磁性相互作用.结合广义布洛赫条件,又进一步计算了反方向的自旋螺旋能量与波矢的色散关系E(q)与E(-q).E(q)与E(-q)能量之差反映了δ-(Zn,Cr)S(111)的S层与Cr层之间空间反演对称性破缺引起的DMI的大小.通过海森伯相互作用(HBI)模型与Dzyaloshinsky-Moriya作用(DMI)模型拟合第一性原理计算值,得到了Cr原子间各近邻的HBI参数J_1-J_4与DMI参数d-_1,d_2.在δ-(Zn,Cr)S(111)中,Cr原子间的耦合为M型反铁磁.DMI参数d_1为-0.53 meV,为顺时针手性DMI,在δ-(Zn,Cr)S(111)界面上有可能会产生斯格明子.本文计算表明,磁性和非磁性半导体界面有可能存在DMI,为理论研究和磁存储技术的进步开拓一个新的方向.     

Generalized Einstein manifolds

A Finslerian manifold is called a generalized Einstein manifold (GEM) if the Ricci directional curvature R(u,u) is independent of the direction. Let F⁰(M, g_t) be a deformation of a compact n-dimensional Finslerian manifold preserving the volume of the unitary fibre bundle W(M). We prove that the critical points g₀ F⁰(g_t) of the integral I(g_t) on W(M) of the Finslerian scalar curvature (and certain functions of the scalar curvature) define a GEM. We give an estimate of the eigenvalues of Laplacian Δ defined on W(M) operating on the functions coming from the base when (M, g) is of minima fibration with a constant scalar curvature H admitting a conformal infinitesimal deformation (CID). We obtain λ ≥ H/(n − 1) (Δf = λf). If M is simply connected and λ = H/(n − 1), then (M, g) is Riemannian and is isometric to an n-sphere. We first calculate, in the general case, the formula of the second variationals of the integral I (g_t) for G = g₀, then for a CID we show that for certain Finslerian manifolds, I″(g₀) > 0. Applications to the gravitation and electromagnetism in general relativity are given. We prove that the spaces characterizing Einstein-Maxwell equations are GEMs.     

Bianchi type I in f(T) gravitational theories

A tetrad field that is homogeneous and anisotropic which contains two unknown functions A(t) and B(t) of cosmic time is applied to the field equations of f(T), where T is the torsion scalar, T = T~μ_(νρ)S_μ~(νρ). We calculate the equation of continuity and rewrite it as a product of two brackets, the first is a function of f(T) and the second is a function of the two unknowns A(t) and B(t). We use two different relations between the two unknown functions A(t) and B(t) in the second bracket to solve it. Both of these relations give constant scalar torsion and solutions coincide with the de Sitter one. So,another assumption related to the contents of the matter fields is postulated. This assumption enables us to drive a solution with a non-constant value of the scalar torsion and a form of f(T) which represents ΛCDM.     

On the parameters for electrocaloric effect predicted by indirect method

The influences of specific heat capacity C_P, temperature step △T, electric field step △ E, and initial electric field E₁ on predicted electrocaloric (EC) temperature △ T of monodomain BaTiO₃ are examined by combining the Maxwell equation and phenomenological theory. Since the procedure is similar to indirect measurement of the EC effect, the results can serve as a reference for experiments. The results suggest that (i) it is reasonable to use zero-field C_P, (ii) optimized △ T should be 2 K, (iii) it is better to keep △ E<E_C, and (iv) E₁<E_C. Here, E_C is the coercive field of material.     

Deux trajectoires de regge dans la reaction πp → πn

The possibility of describing the high-energy reaction π⁻p^→π⁰n with two Regge trajectories (t) and _'(t) is studied in more detail. These trajectories are assumed to be exactly linear in t, with (t) constrained to pass through (m²) = 1. We examine hypotheses in which (t) obeys either the Gell-Mann mechanism or the Chew mechanism, and in which '(t) is or is not a conspiring trajectory. The model is in good agreement with the data in practically all cases; greater experimental accuracy would be necessary to distinguish between the various hypothesis. Predictions are given for the neutron polarization at |t| < 1 GeV².     

Invariant Sets and Exact Solutions to Nonlinear Diffusion Equations with x-Dependent Convection and Absorption

In this paper, we introduce a new invariant set ˜E₀={u:u_x=f^ˊ(x)F(u)+ε [g^ˊ(x) -f^ˊ(x)g(x)]F(u)exp(-∫^u(1/F(z))dz), where f and g are some smooth functions of x, ε is a constant, and F is a smooth function to be determined. The invariant sets and exact solutions to nonlinear diffusion equation u_t=(D(u)u_x)_x+Q(x,u)u_x+P(x,u), are discussed. It is shown that there exist several classes of solutions to the equation that belong to the invariant set ˜E₀.     

Conductivity and applications of Li-biphenyl-1,2-dimethoxyethane solution for lithium ion batteries

The total conductivity of Li-biphenyl-1,2-dimethoxyethane solution(Li_xBp(DME)_(9.65), Bp = biphenyl, DME = 1,2-dimethoxyethane, x = 0.25, 0.50, 1.00, 1.50, 2.00) is measured by impedance spectroscopy at a temperature range from 0℃ to 40℃. The Li_(1.50)Bp(DME)_(9.65) has the highest total conductivity 10.7 m S/cm. The conductivity obeys Arrhenius law with the activation energy(E_(a(x=0.50))= 0.014 eV, E_(a(x=1.00))= 0.046 eV). The ionic conductivity and electronic conductivity of Li_xBp(DME)_(9.65) solutions are investigated at 20℃ using the isothermal transient ionic current(ITIC) technique with an ion-blocking stainless steal electrode. The ionic conductivity and electronic conductivity of Li_(1.00)Bp(DME)_(9.65) are measured as 4.5 mS/cm and 6.6 mS/cm, respectively. The Li_(1.00)Bp(DME)_(9.65) solution is tested as an anode material of half liquid lithium ion battery due to the coexistence of electronic conductivity and ionic conductivity. The lithium iron phosphate(LFP) and Li_(1.5)Al_(0.5)Ti_(1.5)(PO_4)_3(LATP) are chosen to be the counter electrode and electrolyte, respectively. The assembled cell is cycled in the voltage range of 2.2 V-3.75 V at a current density of 50 mA/g. The potential of Li_(1.00)Bp(DME)_(9.65) solution is about 0.3 V vs. Li~+/Li, which indicates the solution has a strong reducibility. The Li_(1.00)Bp(DME)_(9.65) solution is also used to prelithiate the anode material with low first efficiency, such as hard carbon, soft carbon and silicon.     

Thermally generated gauge singlet scalars as self-interacting dark matter

We show that a gauge singlet scalar S, with a coupling to the Higgs doublet of the form lambda(S)S+SH+H and with the S mass entirely generated by the Higgs expectation value, has a thermally generated relic density Omega(S)approximately equal to 0.3 if m(S)approximately equal to (2.9-10.5) (Omega(S)/0.3)(1/5)(h/0.7)(2/5) MeV. Remarkably, this is very similar to the range [m(S) = (6.6-15.4)eta(2/3) MeV] required in order for the self-interaction (eta/4) (S+S)(2) to account for self-interacting dark matter when eta is not much smaller than 1. The corresponding coupling is lambda(S)approximate(2.7 x 10(-10)-3.6 x 10(-9)) (Omega(S)/0.3)(2/5)(h/0.7)(4/5), implying that such scalars are very weakly coupled to the standard model sector.     

2,4,6-三吡啶基三嗪-芳香羧酸镝配合物的合成及其荧光性能

分别以2,4,6-三吡啶基三嗪( TPTZ)、对羟基苯甲酸和对苯二甲酸为配体,以Dy3+为中心合成了不同组成的5种配合物.对其进行了元素分析、紫外光谱、红外光谱、荧光激发和发射光谱的测定.推测配合物的组成分别为:(1)Dy(TPTZ)(NO3)3(C2H5OH)·H2O; (2) Dy (TPTZ)2 (NO3)3 (...     

The New Clue to Understanding fo(975) Meson From Ds Decays

Based on the understanding of nonleptonic decays of charmed meson, the relative ratio Br(D_s⁺→f₀(975)π⁺/Br(D_s⁺→фπ⁺) is calculated. We argue that only (ss) component of f₀(975) contributes to it dominantly. The numerical result proves f₀(975) to be almost a pure (ss) state if the newly measured resultant value of the decay is trustable, and the conclusion is very usefulinformation as a clue for clarifying up the puzzle of 0⁺⁺ meson f₀(975).     

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge_(1-x)Sn_x films on Si(100) and Si(111)

Germanium-tin films with rather high Sn content(28.04% and 29.61%) are deposited directly on Si(100) and Si(111)substrates by magnetron sputtering. The mechanism of the effect of rapid thermal annealing on the Sn surface segregation of Ge_(1-x)Sn_x films is investigated by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy(AFM). The x-ray diffraction(XRD) is also performed to determine the crystallinities of the Ge_(1-x)Sn_x films. The experimental results indicate that root mean square(RMS) values of the annealed samples are comparatively small and have no noticeable changes for the as-grown sample when annealing temperature is below 400℃. The diameter of the Sn three-dimensional(3 D) island becomes larger than that of an as-grown sample when the annealing temperature is 700℃. In addition, the Sn surface composition decreases when annealing temperature ranges from 400℃ to 700℃. However, Sn bulk compositions in samples A and B are kept almost unchanged when the annealing temperature is below 600℃. The present investigation demonstrates that the crystallinity of Ge_(1-x)Sn_x/Si(111) has no obvious advantage over that of Ge_(1-x)Sn_x/Si(100) and the selection of Si(111) substrate is an effective method to improve the surface morphologies of Ge_(1-x)Sn_x films. We also find that more severe Sn surface segregation occurs in the Ge_(1-x)Sn_x/Si(111) sample during annealing than in the Ge_(1-x)Sn_x/Si(100) sample.     

Irreducible Representations and Reduced Coefficients of Quantum Algebra SUq(4) in the SUq(4)⊃ SUq(2)⊕SUq(2) Basis

In this paper, the tensor-like method is presented, and the applications to quantum algebra SU_q(4) are given. The irreducible representation of SU_q(4) and a recurrent formula to calculate reduced coefficients of SU_q(4)⊃ SU_q(2)⊕SU_q(2) is obtained. Some of reduced matrix elements and q-reduced scalar factors (qRF) are tabulated.     

Isomer spectroscopy in (216)(90)Th(126) and the magicity of (218)(92)U(126)

Excited states in (216)Th were investigated via prompt and delayed gamma decays and the recoil-decay tagging method. The decay schemes of the I(pi) = (8+), t(1/2) = 128(8) micros, the I(pi) = (11-), t(1/2) = 615(55) ns, and the I(pi) = (14+), t(1/2) > or = 130 ns isomers were established. The configuration pi h(9/2)f(7/2) is assigned to the I(pi) = (8+) isomer, which implies that the h(9/2) and f(7/2) states are nearly degenerate. This is ascribed to increased binding of the f(7/2) orbital by its coupling to a low-lying I(pi) = (3-) state at E(x) = 1687 keV. The role of octupole and pairing correlations for a Z = 92 shell closure prediction is discussed on the basis of shell model calculations.     

HL-2A装置SDD软X射线PHA阵列实验结果

用软X射线脉冲高度分析(PHA)阵列系统获得了等离子体的电子温度剖面和电子速率分布的时间演化。测量结果表明,电子温度剖面在OH阶段较平缓,接近抛物线1.0×[1-(r/a)²]²分布;而在ECRH(功率0.8MW)阶段,等离子体中心(z＝0)电子温度上升了0.6keV,边缘(z＝30cm)处只上升了0.1keV,反映出ECRH功率沉积在等离子体中心区域;在ECRH期间有大量的高能电子产生,因而电子速率分布在ECRH期间显著改变;等离子体中心的高能电子的数量和能量都比等离子体边缘的增加更大,ECRH(～0.8MW)期间等离子体中心(z＝0)产生的高能电子的能量可达17keV。分析表明：在ECRH(纵场B_t=1.3T)放电期间,ECRH加热效果显著,ECRH的功率主要沉积在等离子体中心附近;电子温度剖面在ECRH阶段较OH阶段峰化;ECRH期间有大量的高能电子产生,电子速率分布被改变成为非麦克斯韦分布。     

Sensitivity-bandwidth product for electro-optic modulators

For lumped-element electro-optic modulators, the sensitivity ( partial differentialphi/ partial differentialV) of the phase, phi , in response to an applied voltage V is related to the optical group delay, T(g) , and the bandwidth, Domega . This relationship imposes a fundamental trade-off between the sensitivity and the bandwidth of electro-optic modulators: ( partial differentialphi/ partial differentialV)Domega= (dn/dV)(omega /n) , where n is the optical index. A similar relationship for traveling-wave modulators sets an upper limit on ( partial differentialphi/ partial differentialV) that is proportional to T(g) .     

Clean prediction of CP-violating processes psi, phi, and Gamma decay to KSKS and KLKL

The ratio of K(S)K(S) (K(L)K(L)) and K(L)K(L) production rates is calculated by considering K(0) - K(0) oscillation in J/psi --> K(0)K(0) decay. The theoretical uncertainty due to strong interaction in J/psi decay is completely canceled in the ratio; therefore, the absolute branching fractions of the CP-violating processes of J/psi --> K(S)K(S) and K(L)K(L) can be cleanly and model-independently determined in the case that J/psi K(S)K(L) decay is precisely measured. In the future tau-charm factory, the expected CP violating process of J/psi --> K(S)K(S) should be reached. It is important to measure J/psi to K(S)K(S) and K(S)K(L) decays simultaneously, so that many systematic errors will be canceled. More precise measurements are suggested to examine the predicted isospin relation in J/psi --> KK decays. All results can be extended to decays of other vector quarkonia, phi, psi(2S), and gamma(1S), etc.     

中性和阳离子丁酮团簇的结构及稳定性的理论研究

使用密度泛函B3LYP方法,在6-31G*和6-311+G**基组水平上计算中性和阳离子丁酮团簇(CH_3COC_2H_5)_n和(CH_3COC_2H_5)_n~+(n 7)的稳定结构,并比较不同尺寸团簇之间的相对稳定性.中性和阳离子丁酮团簇的结构具有相似性:n=3—7时,组成团簇的丁酮的平均几何参数基本相同,单环结构最稳定;随着团簇尺寸的增加,双环结构的稳定性逐渐上升.通过平均结合能、一阶差分能、HOMO-LUMO能隙等计算分析可知:在所研究的各种尺寸团簇中,(CH_3COC_2H_5)_3是最稳定的中性团簇,与实验中的最强峰对应;(CH_3COC_2H_5)_4~+是最稳定的阳离子团簇.通过电离能计算得到丁酮分子的垂直电离能为9.535 eV与实验值相符,同时证明中性和阳离子丁酮二元团簇的结构变化较大.研究结果为实验中丁酮团簇碎片离子的形成机理提供一定的理论依据,并且为进一步研究酮类分子团簇的生长规律提供有价值的信息.     

Different effect of NiMnCo or FeNiCo on the growth of type-Ⅱa large diamonds with Ti/Cu as nitrogen getter

In order to synthesize high-quality type-Ⅱa large diamond, the selection of catalyst is very important, in addition to the nitrogen getter. In this paper, type-IIa large diamonds are grown under high pressure and high temperature(HPHT) by using the temperature gradient method(TGM), with adopting Ti/Cu as the nitrogen getter in Ni_(70)Mn_(25)Co_5(abbreviated as NiMnCo) or Fe_(55)Ni_(29)Co_(16)(abbreviated FeNiCo) catalyst. The values of nitrogen concentration(N_c) in both synthesized high-quality diamonds are less than 1 ppm, when Ti/Cu(1.6 wt%) is added in the FeNiCo or Ti/Cu(1.8 wt%) is added in the NiMnCo. The difference in solubility of nitrogen between both catalysts at HPHT is the basic reason for the different effect of Ti/Cu on eliminating nitrogen. The nitrogen-removal efficiency of Ti/Cu in the NiMnCo catalyst is less than in the FeNiCo catalyst. Additionally, a high-quality type-Ⅱa large diamond size of 5.0 mm is obtained by reducing the growth rate and keeping the nitrogen concentration of the diamond to be less than 1 ppm, when Ti/Cu(1.6 wt%) is added in the FeNiCo catalyst.     

逐级溶剂处理对子长煤有机质大分子结构的影响

从分子水平上理解低阶煤有机质大分子结构的解聚和解离是对其进行高效利用并从中获取高附加值化学品亟需解决的关键问题。为了探究煤有机质大分子结构的解聚和解离机理,借助核磁共振碳谱（13C NMR）、X射线光电子能谱技术（XPS）以及热重分析（TG/DTG）对经过常温超声萃取、醇解、催化醇解逐级溶剂处理的子长低阶煤的化学结构性能进行表征。研究表明,在本实验条件下,溶剂处理降低了煤中脂肪碳比例（f_al）,提高了芳碳比例（f_a）,对碳、氧元素存在形态影响很大;即对大分子结构进行了不同程度的解聚和解离,使其热稳定性增加。经二硫化碳/丙酮（CS₂/AC）常温超声萃取,煤中的氧脂碳（fO1_al,fO2_al,fO3_al）及氧芳碳（fO1_a,fO2_a）结构增加,羰基碳（fC_a）结构降低,平均亚甲基链长（C_n）减小,芳桥碳比例（χ_b）降低,说明CS₂/AC常温超声萃取削弱并解聚了煤大分子结构中以多聚羟基为主的网状体系,C_alk-O,C_ar-O等氧桥键结构增多;而部分羰基碳结构被解离。同时,CS₂/AC解离了通过π-π作用等非共价键作用束缚在煤中的芳烃和脂肪烃片段。经乙醇醇解处理,煤的f_al降至24.89%,f_a升至73.05%,C_n降低,而甲基碳（f1_al）增加,说明醇解过程中发生了亲核取代反应,部分键能较弱的C_alk-O和C_alk-C_alk键断裂。继续经催化醇解作用后,煤中的氧接芳碳（fO3_a）含量明显降低,C_n大幅减小,说明煤中有机质进一步发生解离,部分C_alk-O,C_ar-O和C_ar-C_alk键断裂。     

Mg-Sn-Si合金中Mg2(Si,Sn)复合相的结构与性能研究

研究了铸态Mg-Sn-Si合金中Mg₂(Si,Sn)复合相的结构、 特性以及该相对Mg-Sn-Si合金变质作用的影响. 结果表明: Sn原子能取代Mg₂Si中的部分Si生成Mg₂(Si,Sn)复合相, 该三元相与Mg₂Si, Mg₂Sn相的结构相同, 属于面心立方结构, Mg₂(Si,Sn)相的元素含量并不固定, 在Si富集区形成的Mg₂(Si,Sn)相中, Si元素含量高, 在Si贫乏区形成的Mg₂(Si,Sn)相中, Si元素含量低. Si含量较多的Mg₂(Si,Sn)相性能与Mg₂Si相接近, Sn含量较多的Mg₂(Si,Sn)相性能与Mg₂Sn相接近, 实验中发现Mg₂(Si,Sn)复合相的纳米硬度、 弹性模量与维氏硬度等物理性能介于Mg₂Si与Mg₂Sn之间, Mg₂(Si,Sn)相对汉字状Mg₂Si相的变质处理起到桥梁作用. 关键词： Mg-Sn-Si合金 2Si')" href="#">Mg₂Si 2Sn')" href="#">Mg₂Sn 2(Si,Sn)复合相')" href="#">Mg₂(Si,Sn)复合相