Optical Properties of Nonstoichiometric Tantalum Oxide TaO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> (<Emphasis Type="Italic">x</Emphasis> &lt; 5/2) According to Spectral-Ellipsometry and Raman-Scattering Data

Optical properties of amorphous nonstoichiometric tantalum-oxide films of variable composition (TaO_x, x = 1.94–2.51) in the spectral range of 1.12–4.96 eV, obtained by ion-beam sputtering-deposition of metallic tantalum at different partial oxygen pressures (0.53–9.09 × 10^–3 Pa), have been investigated. It is shown by spectral ellipsometry that the character of dispersion of the absorption coefficient and refractive index in TaO_x of variable composition suggests that light-absorbing films with dispersion similar to that in metals are formed at oxygen pressures in the growth chamber below 2.21 × 10^–3 Pa, whereas transparent films with dielectric dispersion are formed at pressures above 2.81 × 10^–3 Pa. According to the data of quantumchemical simulation, the absorption peak at a photon energy of 4.6 eV in TaO_x observed in the absorptioncoefficient dispersion spectrum is due to oxygen vacancy. The peak in the Raman-scattering spectra of TaO_x films with metallic dispersion at frequencies of 200–230 cm^–1 is presumably related to tantalum nanoclusters.     

Transverse polarization of the lepton in the decay process <Emphasis Type="Italic">B</Emphasis> → <Emphasis Type="Italic">Dlν</Emphasis><Subscript>l</Subscript> due to electromagnetic final-state interaction

The emergence of transverse polarization of the lepton in the decay processes B⁰ → D^?l⁺ν_l and \(B^ + \to \bar D^0 l + \nu _l \) for l = τ, μ is studied on the basis of the Standard Model in the leading approximation of heavy-quark effective theory. It is shown that a nonzero transverse polarization appears owing to electromagnetic final-state interactions at the one-loop level. Diagrams involving D and D* mesons in the intermediate state and making a nonzero contribution to the transverse polarization of the outgoing lepton are considered. If only these mesons are taken into account in evaluating the mean values of the τ-lepton polarization in the decays B⁰→D^?τ⁺ν_τ and \(B^ + \to \bar D^0 \tau ^ + \nu _\tau \), the results are 2.60×10^-3 and ?1.59×10^?3, respectively. The corresponding values of the transverse muon polarization averaged over the Dalitz plot are 2.97×10^?4 and-6.79×10^?4.     

Study of the reaction π–<Emphasis Type="Italic">A</Emphasis> π<Superscript>+</Superscript>π<Superscript>–</Superscript>π<Superscript>–</Superscript><Emphasis Type="Italic">A</Emphasis> at large statistics with VES setup

Partial wave analysis of the π–A π⁺π^–π^– system produced by 29 GeV/cπ^– beam on a beryllium target is presented. About 30 × 10⁶ |events in the wide t′|range 0–0.8 GeV²/c ² are collected with upgraded VES setup. The size of the data sample is 2.5 times larger than one previously analyzed by VES. Data are analyzed using formalism of the density matrix with unlimited rank. We discuss status of the a ₁(1420) a ₂(1700) a ₃(1875) states and a structure of exotic ρ(770)π P-wave with J ^PC = 1^-+. Parameters of a ₃(1875) are estimated as M = 1985 ± 20 MeV/c ², Γ = 200 ± 50 MeV/c ² (preliminary).     

Optical properties and mechanisms of current flow in Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> films prepared by spray pyrolysis

Thin films Cu₂ZnSnS₄ (up to 0.9 μm thick) with p-type conductivity and band gap E_g = 1.54 eV have been prepared by the spray pyrolysis of 0.1 M aqueous solutions of the salts CuCl₂ · 2H₂O, ZnCl₂ · 2H₂O, SnCl₄ · 5H₂O, and (NH₂)₂CS at a temperature T_S = 290°C. The electrophysical properties of the films have been analyzed using the model for polycrystalline materials with electrically active grain boundaries. The energy and geometric parameters of the grain boundaries have been determined as follows: the height of the barriers is E_b ≈ 0.045–0.048 eV, and the thickness of the depletion region is δ ≈ 3.25 nm. The effective concentrations of charge carriers p₀ = 3.16 × 10¹⁸ cm^–3 and their mobilities in crystallites μ_p = 85 cm²/(V s) have been found using the technique for determining the kinetic parameters from the absorption spectra of thin films at a photon energy hν ≈ E_g. The density of states at grain boundaries N_t = 9.57 × 10¹¹ cm^–2 has been estimated.     

Nonrelativistic limit for 2<Emphasis Type="Italic">p</Emphasis> × 2<Emphasis Type="Italic">p</Emphasis>–Dirac operators with point interactions on a discrete set

We consider two families of realizations of the 2p×2p–Dirac differential expression with point interactions on a discrete set X = {x _n }_n=1^∞ ? ? on a half–line (line) and generalize certain results from [10] to the matrix case. We show that these realizations are always self-adjoint. We investigate the nonrelativistic limit as the velocity of light tends to infinity.     

Almost mobility edges and the existence of critical regions in one-dimensional quasiperiodic lattices

We study a one-dimensional quasiperiodic system described by the Aubry–André model in the small wave vector limit and demonstrate the existence of almost mobility edges and critical regions in the system. It is well known that the eigenstates of the Aubry–André model are either extended or localized depending on the strength of incommensurate potential V being less or bigger than a critical value V _c , and thus no mobility edge exists. However, it was shown in a recent work that for the system with V < V _c and the wave vector α of the incommensurate potential is small, there exist almost mobility edges at the energy E _c±, which separate the robustly delocalized states from “almost localized” states. We find that, besides E _c±, there exist additionally another energy edges E _c′±, at which abrupt change of inverse participation ratio (IPR) occurs. By using the IPR and carrying out multifractal analyses, we identify the existence of critical regions among |E _c±|?≤?|E|?≤?|E _c′±| with the mobility edges E _c± and E _c′± separating the critical region from the extended and localized regions, respectively. We also study the system with V > V _c , for which all eigenstates are localized states, but can be divided into extended, critical and localized states in their dual space by utilizing the self-duality property of the Aubry–André model.     

Investigating the Double Beta Decay of <Superscript>58</Superscript>Ni

Double beta decay (β + EC, EC/EC) of ⁵⁸Ni is investigated at France’s Modane Underground Laboratory (4800 m water equivalent) using the OBELIX ultralow-background HPGe detector with a sensitive volume of 600 cm³ and a natural nickel sample of ~68% 58Ni with a mass of ~21.7 kg. After preliminary analysis of the experimental data accumulated over ~144 days, new experimental limits are obtained for the 2νβ⁺EC decay of ⁵⁸Ni to the 0⁺ ground state and the 2 ₁ ⁺ , 811 keV excited state of ⁵⁸Fe, and for the 2νEC/EC decay of ⁵⁸Ni to the 2 ₁ ⁺ , 811 keV and 2 ₂ ⁺ , 1675 keV excited states of ⁵⁸Fe. The limits are T_1/2(β⁺EC,0→0⁺) > 1.7 × 10²² yr, T_1/2(β⁺EC,0→2 ₁ ⁺ ) > 2.3 × 10²² yr, T_1/2(EC/EC,0→2 ₁ ⁺ ) > 3.3 × 10²² yr, and T_1/2(EC/EC,0→2 ₂ ⁺ ) > 3.4 × 10²² yr. Experimental limit T_1/2(0νEC/EC–res, 1918 keV > 4.1 × 10²² yr is obtained for resonant neutrinoless radiative EC/EC decay with an energy of 1918.3 keV. All limits are at 90% CL.     

New Constraints on the Axion–Photon Coupling Constant for Solar Axions

Resonance excitation of the ⁸³Kr first nuclear level (E = 9.4 keV) by solar axions formed via the Primakoff mechanism is sought. The γ- and X-ray photons and the conversion and Auger electrons arising from the excited-level relaxation are detected with a gas proportional counter of a low-background detector in the underground Baksan Neutrino Observatory. The following experimental constraint is obtained for the product of the axion–photon coupling constant and the axion mass:|g_Aγ × m_A| ≤ 6.3 × 10 ^-17 In the framework of the hadronic-axion model, this corresponds to a new axion-mass constraint of m_A ≤ 12.7 eV at 95% C.L.     

Study of <Superscript>179</Superscript>Hf<Superscript><Emphasis Type="Italic">m</Emphasis>2</Superscript> excitation

Isomeric ratios of ¹⁷⁹Hf ^m2,g yields in the (γ, n) reaction and the cross section for the ¹⁷⁹Hf ^m2 population in the (α, p) reaction are measured for the first time at the end-point energies of 15.1 and 17.5 MeV for bremsstrahlung photons and 26 MeV for alpha particles. The results are σ = (1.1 ± 0.11) × 10^?27 cm² for the ¹⁷⁶Lu(α, p)¹⁷⁹Hf ^m2 reaction and Y _m2/Y _g = (6.1 ± 0.3) × 10^?6 and (3.7 ± 0.2) × 10^?6 for the ¹⁸⁰Hf(γ, n)¹⁷⁹Hf ^m22 reaction at Е _ep =15.1 and 17.5 MeV, respectively. The experimental data on the relative ¹⁷⁹Hf ^m2 yield indicate a single-humped shape of the excitation function for the ¹⁸⁰Hf(γ, n)¹⁷⁹Hf ^m2 reaction. Simulation is performed using the TALYS-1.4 and EMPIRE-3.2 codes.     

Investigation of Rare Pion Decays with the PIBETA Spectrometer

Experimental results on pion decays obtained with the PIBETA spectrometer at the Paul Scherrer Institute (PSI) are reviewed. For pion beta decay π⁺ → π⁰е⁺ν (πβ), a precision measurement of relative probability yields Г(πβ) = [1.036 ± 0.004(stat) ± 0.004(syst) ± 0.003(π⁺→е⁺ν)] × 10^–8, which implies V_ud = 0.9728(30) for the corresponding element of the Cabibbo–Kobayashi–Maskawa mixing matrix. Using a sample of 65 × 10³ events, relative probability of the π⁺→е⁺νγ radiative pion decay (RPD) in the kinematic region of E_γ > 10 MeV and θ_eγ > 40° is measured as B^exp = 73.86(54) × 10^–8. A statistical analysis of measured E_e+ and E_γ distributions for this decay yield the values F_V = 0.0258(17) and F_A = 0.0117(17) for the pion weak formfactors. Assuming that F_V linearly depends on the е⁺ν invariant mass q² as F_V(q²) = F_V(0)(1 + aq²), the slope parameter is extracted as а = 0.10(6). The pion polarizability and neutral-pion lifetime are estimated as α_E = 2.78(10) × 10^–4 fm³ and τ(π⁰) = (8.5 ± 1.1) × 10^–17 s, respectively. The data for decays π⁺→ е⁺ ν and \({\mu ^ + } \to {e^ + }v\bar v\gamma \) have been collected and are being processed. The follow-up PEN experiment aims at reducing the uncertainty on the π⁺ → е⁺ ν relative probability by almost an order of magnitude (to 5 × 10^–4).     

Representation of type I heterostructure junctionless tunnel field effect transistor for high-performance logic application

In this paper, a gate-all-around junctionless tunnel field effect transistor (JLTFET) based on heterostructure of compound and group III–V semiconductors is introduced and simulated. In order to blend the high tunneling efficiency of narrow band gap material JLTFETs and the high electron mobility of III–V JLTFETs, a type I heterostructure junctionless TFET adopting Ge–Al _x Ga_1?x As–Ge system has been optimized by numerical simulation in terms of aluminum (Al) composition. To improve device performance, we considered a nanowire structure, and it was illustrated that high-performance logic technology can be achieved by the proposed device. The optimal Al composition founded to be around 20 % (x = 0.2). The numerical simulation results demonstrate that the proposed device has low leakage current I _OFF of ~1.9 × 10^?17, I _ON of 4 µA/µm, I _ON/I _OFF current ratio of 1.7 × 10¹¹ and subthreshold swing SS of 12.6 mV/decade at the 40 nm gate length and temperature of 300 K.     

Optical properties of nonstoichiometric ZrO<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript> according to spectroellipsometry data

Amorphous nonstoichiometric ZrO_x films of different composition have been synthesized by the method of ion-beam sputtering deposition of metallic zirconium in the presence of oxygen at different partial oxygen pressures in the growth zone, and their optical properties have been studied in the spectral range of 1.12–4.96 eV. It is found that light-absorbing films with metallic conductivity are formed at the partial oxygen pressure below 1.04 × 10^–3 Pa and transparent films with dielectric conductivity are formed at the pressure above 1.50 × 10^–3 Pa. It is shown that the spectral dependences of optical constants of ZrO_x films are described well by the corresponding dispersion models: the Cauchy polynomial model for films with dielectric conductivity and the Lorentz–Drude oscillator model for films with metallic conductivity.     

Excitation of the Yb II transitions terminating on the low-lying odd levels

Excitation of the transitions from the even levels of a singly charged ytterbium ion that terminate on the low-lying odd levels 4f ¹³(² F°)6s ^{2 2} F°, 4f ¹⁴(¹ S)6p ² P°, and 4f ¹³(² F°_7/2)5d6p(³ D)³[3/2]° is experimentally studied by measuring 51 excitation cross sections at an electron energy of 50 eV, and 16 optical excitation functions are determined within the electron energy range 0–200 eV. The largest magnitudes of the measured cross sections exceed 3 × 10^?17 cm².     

Low-temperature thermal conductivity of tellurium-doped bismuth

Phonon thermal conductivities κ₂₂ (?T ‖ C1) and κ₃₃ (? T ‖ C₃) of tellurium-doped bismuth with an electron concentration in the range 1.8 × 10¹⁹ ≤ n_L ≤ 1.4 × 10²⁰ cm^?3 were studied in the temperature interval 2 < T < 300 K. The temperature dependence of the phonon thermal conductivity obtained on doped bismuth samples of both orientations exhibits two maxima, one at a low temperature and the other at a high temperature. The effect of various phonon relaxation mechanisms on the dependence of both phonon thermal conductivity maxima on temperature, impurity concentration, and electron density is studied.     

Study of the semi-conducting properties of pyrolusite

The electrical conductivity σ of the specimens is found to obey a relation of the type σ=C exp (?B/k T) over a temperature range 300 to 500° K whereC andB are constants. The experimentally determined values ofB and C are (1)B≈1490 to 2199 (2)C ≈ 0·72 × 10^?3 to 4·9 × 10^?3 ohms^?1 cms^?1. The value of the activation energy determined from the values ofB are ≈0·13 to 0·19 e.V. In A.C measurements σ is found to vary with voltage applied across the specimen at a given temperature. The i?V characteristics of metal point semi-conductor contacts are non-linear symmetrical curves and are strongly temperature dependant. The value of the Hall constant (?0·14 cm³/coul) yields carrier concentration as 4·3 × 10¹⁹/cm³, and mobility 1·2 cm² volt^?1 second^?1. Δ?/? for the specimen is found to vary asH ² where ? is the resistivity andH the value of magnetic field. The specimens develop a thermo-electric power of magnitude 200 μV/K to 500 μV/K which is fairly constant over the temperature range 300 to 800° K. The sign of the thermo-e.m.f. and of the Hall constant indicate that the specimens are “n” type.     

The effective Hamiltonian for copper oxides

The concentration dependence of the exchange integral for the subsystem of spin moments of copper ions J(h) = J ? J ₁ × h ? J ₂ × h ² has been calculated for the Emery model within the effective Hamiltonian obtained with due regard to intersite interactions and oxygen configurations with different numbers of holes. It is shown that allowance for the oxygen single-hole states occurring upon doping leads to additional contributions to J(h), whose intensities depend on the intersite correlations of the nearest environment of exchange-coupled copper ions.     

Ion dynamics in methylcellulose–LiBOB solid polymer electrolytes

A polymer electrolyte system comprising methylcellulose (MC) as the host polymer and lithium bis(oxalato) borate (LiBOB) as the lithium ion source has been prepared via the solution cast technique. The electrolyte with the highest conductivity of 2.79 μS cm^?1 has a composition of 75 wt% MC–25 wt% LiBOB. The mobile ion concentration (n) in this sample was estimated to be 5.70?×?10²⁰ cm^?3. A good correlation between ionic conductivity, dielectric constant, and free ion concentration has been observed. The ratio of mobile ion number density (n) at a particular temperature to the concentration n ₀ of free ions at T?=?∞ (n/n ₀) and the power law exponents (s) exhibit opposite trends when varied with salt concentration.     

Specific features of anion transfer in HoF<Subscript>3</Subscript> crystals at high temperatures

The anionic conductivity of HoF₃ single crystals with a β-YF₃ structure (orthorhombic crystal system, space group Pnma) is investigated over a wide range of temperatures (323–1073 K). The unit cell parameters of HoF₃ crystals are as follows: a=0.6384±0.0009 nm, b=0.6844±0.0009 nm, and c=0.4356±0.0005 nm. It is revealed that the conductivity anisotropy of the HoF₃ crystals is insignificant over the entire temperature range covered. The crossover from one mechanism of ion transfer to another mechanism is observed near the critical temperature T_c≈620 K. The activation enthalpy of electrical conduction is found to be ΔH₁=0.744 eV at T<T_c and ΔH₂=0.43 eV at T>T_c. The fluorine vacancies are the most probable charge carriers in HoF₃ crystals. The fluorine ionic conductivities at temperatures of 323, 500, and 1073 K are equal to 5×10^?10, 5×10^?6, and 2×10^?3 S cm^?1, respectively.     

Peculiarities of magnetic,galvanomagnetic, elastic,and magnetoelastic properties of Eu<Subscript>0.55</Subscript>Sr<Subscript>0.45</Subscript>MnO<Subscript>3</Subscript>

Magnetic, elastic, magnetoelastic, transport, and magnetotransport properties of the Eu_0.55Sr_0.45MnO₃ ceramics have been studied. A break was detected in the temperature dependence of electrical resistivity ρ(T) near the temperature of the magnetic phase transformation (41 K), with the material remaining an insulator down to the lowest measurement temperature reached (ρ=10⁶ Ω cm at 4.2 K). In the interval 4.2≤T≤50 K, the isotherms of the magnetization, volume magnetostriction, and ρ were observed to undergo jumps at the critical field H_C1, which decreases with increasing T. For 50≤T≤120 K, the jumps in the above curves persist, but the pattern of the curves changes and H_C1 grows with increasing T. The magnetoresistance Δρ/ρ = (ρ _H ?ρ_H=0)/ρ _H is positive for H<H_C1 and passes through a maximum at 41 K, where Δρ/ρ = 6%. For H>H_C1, the magnetoresistance is negative, passes through a minimum near 41 K, and reaches a colossal value of 3×10⁵ % at H=45 kOe. The volume magnetostriction is negative and attains a giant value of 4.5×10^?4atH=45 kOe. The observed properties are assigned to the existence of three phases in Eu_0.55Sr_0.45MnO₃, namely, a ferromagnetic (FM) phase, in which carriers are concentrated because of the gain in s-d exchange energy, and two antiferromagnetic (AFM) phases of the A and CE types. Their fractional volumes at low temperatures were estimated to be as follows: ～3% of the sample volume is occupied by the FM phase; ～67%, by the CE-type AFM phase; and ～30%, by the A-type AFM phase.     

Plasma-volume generation of H<Superscript>−</Superscript> ions in a low-voltage xenon-hydrogen discharge. II

A low-voltage xenon-hydrogen discharge is considered theoretically at an interelectrode distance of L = 1 cm and cathode emission current densities of j _s = 2–20 A/cm². Basic parameters of the discharge plasma, in particular, the total hydrogen and xenon densities, are optimized to attain the maximum possible density of negative hydrogen ions \(N_{H^ - } (L)\) at the plasma-anode boundary. The distributions of the plasma parameters over the discharge gap are calculated for optimized regimes. According to calculations, at intermediate cathode emission current densities (j _s ≈ 5–10 A/cm²) in optimized discharge regimes, the density of negative hydrogen ions in the anode region of the plasma is \(N_{H^ - } (L)\) ≈ (1.5–2.5) × 10¹² cm^?3 and the total plasma pressure is p ₀ = 0.5–0.6 Torr.