Microstructure and tribological properties of TiN, TiC and Ti(C, N) thin films prepared by closed-field unbalanced magnetron sputtering ion plating

TiN, TiC and Ti(C, N) films have been respectively prepared using closed-field unbalanced magnetron sputtering ion plating technology, with graphite target serving as the C supplier in an Ar-N₂ mixture gas. Bonding states and microstructure of the films are characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) in combination with transmission electron microscopy (TEM). The friction coefficients are measured by pin-on-disc test and the wear traces of deposited films are observed by optical microscope. Results show that the TiN film and Ti(C, N) film exhibit dense columnar structure while the TiC film exhibits a mixed microstructure of main nanocrystallite and little amorphous phases. The Ti(C, N) film has the highest microhardness value and the TiC film has the lowest. Because of small amount of pure carbon with sp² bonds existing in the film, the friction coefficients of Ti(C, N) and TiC multilayer films are lower than that of TiN film. In addition, the multilayer structure of films also contributes visually to decrease of friction coefficients. The TiC film has extremely low friction coefficient while the wear ratio is the highest in all of the films. The results also show that the Ti(C, N) film has excellent anti-abrasion property.     

Comparative study of titanium carbide and nitride coatings grown by cathodic vacuum arc technique

Titanium nitride (TiN), titanium carbide (TiC) thin films and TiC/TiN bilayers have been deposited on AISI 304 stainless steel substrates by plasma assisted physical vapor deposition technique—reactive pulsed vacuum arc method. The coatings were characterized in terms of crystalline structure, microstructure and chemical nature by X-ray diffraction and X-ray photoelectron spectroscopy, respectively. Tribological behavior was investigated using ball on disc technique. The average coefficient of friction was measured, showing lower values for the TiN/TiC bilayer. Dynamic wear curves were performed for each coating, observing a better wear resistance for TiN/TiC bilayers, compared to TiN and TiC monolayers. On the other hand, the TiCN formation in the TiN/TiC bilayer was observed, being attributed to the interdiffusion between TiN and TiC at the interface. Moreover, the substrate temperature influence was analysing observing a good behavior at T_S = 115 °C.     

CEMS of nitride coatings in agressive environments

The corrosion properties of single layered TiN and CrN films have been compared to bi-layered and multi-layered Ti/TiN films. XPS has showed that in humid SO₂ atmosphere the best corrosion properties have been achieved by a multi-layered Ti/TiN coating. Cyclic voltammetry in acetate buffer has been applied to measure the porousity and corrosion resistance of coatings. The best results have been achieved by multi-layered Ti/TiN and CrN films. Conversion electron Mössbauer spectroscopy has been used to study the changes in the interface Fe/TiN during thermal treatment in UHV. It has been shown that the amount of iron nitrides in the interface increases with increasing temperature.     

Crystallization of amorphous SiC and superhardness effect in TiN/SiC nanomultilayers

TiN/SiC nanomultilayers with various constituent layer thicknesses were prepared by magnetron sputtering using TiN and SiC ceramic targets. X-ray diffractometer, scanning electron microscope, energy dispersive spectrometer, high-resolution transmission electron microscope, atomic force microscope and nanoindenter were employed to study the growth, microstructure and mechanical properties of these films. Experimental results revealed that amorphous SiC, which is more favorable under normal sputtering conditions, was forced to crystallize and grew epitaxially with TiN layers at thicknesses of less than 0.8 nm. The resultant films were found to form strong columnar structures, accompanied with a remarkable hardness increment. Maximal nanoindentation hardness as high as 60.6 GPa was achieved when SiC thickness was ∼0.6 nm. A further increase of SiC thickness caused the formation of amorphous SiC, which blocked the epitaxial growth of the multilayers, resulting in the decline of film's hardness. Additionally, investigations on multilayers different in TiN layer thicknesses showed that they are insensitive in both microstructure and hardness to the fluctuation of TiN layer thickness. The formation of epitaxially grown structure between crystalline SiC and TiN layers was found to be responsible for the obtained superhardness in multilayers.     

In-situ SEM indentation studies of the deformation mechanisms in TiN, CrN and TiN/CrN

In this study, the microstructure and the deformation mechanisms of TiN, CrN and multilayer TiN/CrN thin films on silicon substrates were investigated. Cross-sectional lamellas of nanoindents were prepared by focused ion beam milling to observe by transmission electron microscopy the microstructure of the as-deposited and deformed materials. TiN film exhibits nanocrystalline columns, whereas CrN shows large grains. The TiN/CrN multilayer presents microstructural features typical for both materials. A film hardness of 16.9GPa for CrN, 15.8GPa for TiN and 16.6GPa for TiN/CrN was found by the nanoindentation. Reduced modulus recorded for TiN and CrN reference coatings were 221.54 and 171.1GPa, respectively, and 218.6GPa for the multilayer coating. The deformation mechanisms were observed via in-situ scanning electron microscope nanoindentation. The TiN thin film showed short radial cracks, whereas CrN deformed through pile-up and densification of the material. For TiN/CrN multilayer pile-up and cracks were found. Transmission electron microscopy observations indicated that TiN deforms through grain boundary sliding and CrN via densification and material flow. The deformation mechanism observed in TiN/CrN multilayer was found to be a mixture of both modes.     

Properties including step coverage of TiN thin films prepared by atomic layer deposition

The physical properties including the step coverage of the TiN films deposited by atomic layer deposition (ALD) technique, using TiCl₄ and NH₃ as the precursors have been investigated. The deposition rate of the TiN film is constant and moderately high (0.6 Å per cycle) under an optimum deposition condition. The film resistivity is appreciably low (200 μΩ cm). The XRD analysis results indicate polycrystalline nature of the TiN films with a (1 1 1) preferred orientation. The XPS and AES analysis results establish that the Cl impurity concentration in the TiN films is lower than 1 at.% and the ratio of Ti and N by atomic concentration in the TiN films is nearly equal to 1:1 AFM analysis reveals that the RMS surface roughness is low. Also it is found by SEM observation that the step coverage of the TiN films with trenches (the aspect ratio being 10:1) is excellent. One hundred percent conformality is observed for both the side/bottom and the side/top sections.     

Growth of TiN films at low temperature

Thermodynamic analysis on growth of TiN films was given. The driving force for deposition of TiN is dependent on original Ti(g)/N(g) ratio and original partial pressure of N(g). TiN films were deposited by ion beam assisted electron beam evaporation system under suitable nitrogen gas flow rate at 523 K while the density of plasma varied with diverse discharge pressure had been investigated by the Langmuir probe. TiN films were characterized by means of Fourier transform infrared absorption spectrum (FTIR), X-ray diffraction (XRD) and observed by means of atom force microscopy (AFM). The results of these measurements indicated preferential TiN(1 1 1) films were deposited on substrate of Si(1 0 0) and glass by ion beam assisted electron beam evaporation system at low temperature, and it was possible for the deposition of TiN films with a preferential orientation or more orientations if the nitrogen gas flow rate increased enough. Sand Box was used to characterize the fractal dimension of surface of TiN films. The results showed the fractal dimension was a little more than 1.7, which accorded with the model of diffusion limited aggregation (DLA), and the fractal dimension of TiN films increased with increase of the temperature of deposition.     

磁控溅射(Ti,N)/Al纳米复合薄膜的微结构和力学性能

采用Al和TiN靶通过磁控共溅射方法, 制备了一系列Ti:N≈1的不同(Ti, N) 含量的铝基纳米复合薄膜, 利用X射线能量分散谱仪、X射线衍射仪、透射电子显微镜和纳米力学探针表征了薄膜的成分、 微结构和力学性能, 研究了(Ti, N)含量对复合薄膜微结构和力学性能的影响. 结果表明: Ti, N原子的共同加入使复合薄膜形成了同时具有置换固溶和间隙固溶特征的"双超过饱和固溶体", 薄膜的晶粒随着溶质含量的增加逐步纳米化, 并进一步形成非晶结构, 晶界区域形成溶质原子的富集区. 相应地, 复合薄膜的硬度在含1.8 at.%(Ti, N) 时就可迅速提高到3.9 GPa; 随着TiN含量的增加, 薄膜的硬度进一步提高到含17.1 at.%(Ti, N)时的8.8 GPa. 以上结果显示出Ti和N"双超过饱和固溶"对Al薄膜极其显著的强化效果.     

Structural and photoluminescent properties of TiN thin films

Structural and photoluminescent properties of TiN thin films deposited by dc reactive magnetron sputtering are studied. It is found that TiN thin films are polycrystalline with a grain size of ～15 nm and have a NaCl-type cubic crystal structure with a lattice constant of 0.42 nm. The TiN films under study exhibit photoluminescence in the spectral range h _ν ≈ 2.1–3.4 eV at 300 K.     

用激光分子束外延在Si衬底上外延生长高质量的TiN薄膜

采用激光分子束外延技术,利用两步法,在Si单晶衬底上成功地外延生长出TiN薄膜材料.原子力显微镜分析结果显示, TiN薄膜材料表面光滑,在10 μm×10 μm范围内,均方根粗糙度为0842nm.霍耳效应测量结果显示,TiN薄膜在室温条件下的电阻率为36×10^-5Ω·cm,迁移率达到5830 cm²/V·S,表明TiN薄膜材料是一种优良的电极材料.X射线θ—2θ扫描结果和很高的迁移率均表明,高质量的TiN薄膜材料被外延在Si衬底 关键词： 激光分子束外延 TiN单晶薄膜 外延生长     

Structural properties of TiN films grown on stainless steel substrates by a reactive radio-frequency sputtering technique at low temperature

TiN thin films were grown on stainless steel substrates by using the reactive radio-frequency magnetron-sputtering technique at relatively low temperature (200°C) using Ti and N₂. The deposition rate of the TiN film increased linearly with increasing applied radio-frequency power, and it decreased with increasing partial-pressure ratio of the N₂ gas to the Ar gas. Scanning electron microscopy (SEM) showed that the surfaces of the TiN films had very smooth morphologies. The TiN thin film had good stoichiometry for a partial-pressure ratio of 0.05. The stoichiometry of the TiN films and the interface qualities of the TiN/stainless steel heterostructures were investigated by Auger electron spectroscopy (AES) measurements. Auger depth profiles indicated that the compositions of the as-grown films consisted of titanium and nitrogen uniformly distributed throughout the films and that the films exhibited smooth interfaces. The interface quality of the TiN films to the stainless steel substrates were improved by annealing. These results indicate that annealed TiN thin films grown on stainless steel substrates hold promise for potential applications in advanced ceramic devices.     

Crystal orientation control of polycrystalline TiN thin films using ZnO under layers deposited by magnetron sputtering

The effect of ZnO under layers on crystal growth of TiN thin films was investigated. TiN single layers and double-layered ZnO/TiN thin films were deposited on soda-lime-silicate glass substrates by magnetron sputtering. XRD analysis indicated that TiN single layers exhibited {1 1 1} preferred orientation on glass substrates; on the other hand, the TiN thin films with {1 0 0} preferred orientation were obtained using ZnO under layers and crystallized better than the TiN single layers. This crystal orientation change of TiN thin films should come from heteroepitaxial-like growth because the TiN{1 0 0} and ZnO{0 0 1} crystal lattice planes have similar atomic arrangements. Besides, the possible mismatch between TiN and ZnO atomic arrangements was estimated to be 7.8%. Furthermore, the resistivity and optical absorbance of TiN thin films decreased when they were deposited on ZnO under layers. It can be considered that electrical and optical properties should be improved due to the well-crystallization of TiN thin films using ZnO under layers.     

金属管件内壁栅极增强等离子体源离子注入的轴向特性研究

栅极增强等离子体源离子注入(GEPSII)一种新的金属管件内壁处理方法，该方法能够均匀地对金属管件内壁进行离子注入，并且能够生成二元金属化合物.在金属管件内轴向放置三块45号钢样品，利用GEPSII方法在金属管件内壁成功生长金黄色氮化钛(TiN)薄膜.结构分析显示TiN主要沿(111)和(200)晶面生长，深度分析显示膜的厚度大约二十几纳米，膜质地均匀且在基底有一定的嵌入深度.电化学腐蚀、硬度、磨擦学分析表明TiN薄膜很好地改善了45号钢的表面性能，并且表现出很高的轴向均匀性. 关键词： 等离子体源离子注入 内表面 氮化钛     

氮化钛薄膜的光学性能分析

利用磁控溅射法，在不同的工艺条件下制备氮化钛薄膜。详细分析了不同工艺条件下薄膜的光谱选择特性以及相应的光学常数，通过俄歇电子能谱对薄膜的不同深度的元素成分进行了分析，由原子力显微镜测量并处理得到氮化钛薄膜的表面形貌图。结果表明，氮化钛薄膜的光学性能严格依赖于氮和钛原子数比，符合化学计量比的TiN薄膜具有良好的光谱选择性。基底加负偏压溅射可进一步改善薄膜的性能。     

Characterization of bilayer coatings of TiN/ZrN grown using pulsed arc PAPVD

Nitride coatings have been used to increase hardness and to improve the wear and corrosion resistance of structural materials. Coatings of TiN/ZrN were grown on stainless steel substrates using a physical vapour deposition system assisted by pulsed arc plasma (PAPVD). The coatings have been characterized by X-ray diffraction (XRD) in order to identify the present phases of the films, microstrain level generated, crystallite size and the variation of the lattice parameter. The results showed plane orientations (1 1 1) and (2 0 0) in both TiN and ZrN films. Morphology surface analysis of the samples were performed using a scanning probe microscope to characterize the grain size and roughness in the mode of the atomic force microscopy (AFM) hence it was observed that the root-mean-squared (rms) roughness for ZrN is smaller than for TiN. Besides elastic and friction properties of the films were characterized qualitatively, and then, they were compared with those of the substrates by using force modulation microscopy (FMM) and lateral force microscopy (LFM) modes. In addition, an elemental analysis of the samples was realized by means of energy dispersive spectroscopy (EDS). Both, XRD and AFM results are given as a function of the number of shots. Chemical states of the TiN and ZrN films were determined by X-ray photoelectron spectroscopy (XPS).     

Effect of Silane Flow Rate on Structure and Corrosion Resistance of Ti-Si-N Thin Films Deposited by a Hybrid Cathodic Arc and Chemical Vapour Process

Ti-Si-N thin flms with different silicon contents are deposited by a cathodic arc technique in an Ar＋N2＋SiH4 mixture atmosphere. With the increase of silane flow rate, the content of silicon in the Ti-Si-N films varies from 2.0 at. % to 12.2 at. %. Meanwhile, the cross-sectional morphology of these films changes from an apparent columnar microstructure to a dense fine-grained structure. The x-ray diffractometer （XRD） and x-ray photoelectron spectroscopy （XPS） results show that the Ti-Si-N film consists of TiN crystallites and SiNx amorphous phase. The corrosion resistance is improved with the increase of silane flow rate. Growth defects in the films produced play a key role in the corrosion process, especially for the local corrosion. The porosity of the films decreases from 0.13%to 0.00032% by introducing silane at the flow rate of 14sccm.     

Study of TiN and ZrN thin films grown by cathodic arc technique

Thin films of TiN and ZrN were grown on stainless steel 316 substrate using the pulsed cathodic arc technique with different number of discharges (one to five discharges). The coatings were characterized in terms of crystalline structure, microstructure, elementary chemical composition and stoichiometric by X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy for chemical analyses (XPS), respectively. The XRD results show that for TiN as for ZrN, the preferential direction occurs in the plane (2 0 0), and this result stays when increasing the number of discharges. The grain size is increased with the increase of the number of discharges for both nitrides, the roughness for the TiN film is greater than for the ZrN film; these results were determined by AFM. XPS analysis determined that there is a higher nitrogen presence in the ZrN film than in the TiN film.     

Characterization of Ti-Zr-N films deposited by cathodic vacuum arc with different substrate bias

Ti-Zr-N (multi-phase) films were prepared by cathodic vacuum arc technique with different substrate bias (0 to −500 V), using Ti and Zr plasma flows in residual N₂ atmosphere. It was found that the microstructure and mechanical properties of the composite films are strongly dependent on the deposition parameters. All the films studied in this paper are composed of ZrN, TiN, and TiZrN ternary phases. The grains change from equiaxial to columnar and exhibit preferred orientation as a function of substrate bias. With the increase of substrate bias the atomic ratio of Ti to Zr elements keeps almost constant, while the N to (Ti + Zr) ratio increases to about 1.1. The composite films present an enhanced nanohardness compared with the binary TiN and ZrN films deposited under the same condition. The film deposited with bias of −300 V possesses the maximum scratch critical load (L_c).     

Synthesis and evaluation of TiN–WC/TiN nanocomposite by the hybrid technique with arc ion plating and magnetron sputtering

By adjusting the power of WC target, novel TiN–WC films with different proportions of WC phase were prepared on TiN interlayer using the hybrid technique of arc ion plating (AIP) and magnetron sputtering (MS). The TiN–WC films were characterized by XRD, XPS, AFM, FESEM, Nano-indenter, and UMT-2MT tribometer. The TiN–WC film that is composed with TiN and WC phases was grown by 15–25 nm nanodotes along the primarily growth direction TiN (1 1 1) in AIP interlayer. Among the three TiN–WC films deposited at various powers of WC target, the TiN–WC2 (500 W) has the highest deposition rate of 1.4 nm/min. The content of WC phase increases as WC target power increases in the TiN–WC films. However, the deposition rate of TiN–WC film gains at first and then declines when WC target power exceeds 500 W because of the addictive poisoning of Ti target. In the present case, the incorporation of WC into TiN is found to result in a slight decrease in friction coefficient. Furthermore, the wear mechanism of multilayer AIP TiN films and MS TiN–WC/AIP TiN films was transformed from “severe wear” to “mild wear”. As a result, the 48TiN52WC film of 35 GPa hardness exhibits better tribological performance.     

Nanostructured two-phase nc-TiN/a-(TiB2, BN) nanocomposite thin films

Thin films of Ti-B-N with different N contents were deposited on Si(1 0 0) at room temperature by reactive unbalanced close-field dc-magnetron sputtering using three Ti targets and one TiB₂ target in an Ar-N₂ gas mixture. The effect of N content on bonding structure, microstructure, phase configuration, surface roughness and mechanical properties have been investigated using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), cross-sectional scanning electron microscopy (SEM), plan-view and cross-sectional high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM) and microindentation measurements. It was found that the N content significantly affected phase segregation and microstructure. The nitrogen-free TiB_0.65 films showed an amorphous compound consisting of Ti and TiB₂ (Ti-TiB₂). After adding about 28 at.% N, Ti was preferentially bonded to N to form TiN, accompanying with formation of small amounts of TiB and BN bonds. At this stage they combined TiB₂ to form a two-phase nanocomposite with microstructures comprising of nanocrystalline (nc-) TiN phase in nitrogen-containing amorphous (a-) TiB₂ matrix. Addition of more N promoted formation of BN bonding at cost of TiB₂, which resulted in formation of nanocomposite nc-TiN/a-(TiB₂, BN) thin films. A small grain less than 8 nm in size was found at low N content, and the grain size increased with increasing N content. A low microhardness value of about 20 GPa was obtained in the amorphous Ti-TiB₂ compound, and a maximum microhardness value of about 50 GPa was achieved in nc-TiN/a-TiB₂. A decrease of microhardness took place after formation of BN (i.e. amorphous matrix composed by both TiB₂ and BN) with further increasing N content, and a hardness value of about 35 GPa was followed at high N contents. The surface roughness strongly depended on the phase configuration. The higher the mole fraction of nanocrystalline TiN phase, the rougher the surface became.