Modification of Ceria Nanoparticles by Accelerated Electron Irradiation

Physics of the Solid State - The luminescence and optical properties of ceria (CeO2) nanoparticles irradiated by accelerated electrons with an energy of 10 MeV are investigated in this work. CeO2...     

Durability of Ultra-Thin Silver Films and Silver-Gold Alloy Films under UV Irradiation

Silver films(Ag) and silver-gold films(Ag-Au) with thickness ~15nm are coated on Bk7 glasses through thermal evaporation.After doping gold of 5.2%,the grain size of the Ag film reduces from 13.6nm to 9.1nm,also the surface roughness decreases from 1.45 nm to 0.94 nm.A UV lamp is used as the irradiation light source to accelerate the corrosion process in the atmosphere.After 17 h irradiation,the pure silver film surface turns dark,and the transmittances reduce from 350 nm to 500 nm,while the Ag-Au film degrades much less,almost negligibly after UV radiation.Additional x-ray photoelectron spectroscopy and atomic force micrographs data are provided to show atomic content of Sims and their surface morphologies.It is suggested that small grain size and high packing density of alloy film prevent reaction of silver with oxygen in the atmosphere,which leads to high stability of the Ag-Au Elm.     

聚四氟乙烯材料表面激光改性与刻蚀

利用波长为248 nm的准分子激光束在不同激光能量密度下照射聚四氟乙烯(PTFE)材料的表面,并用扫描电镜(SEM)、X射线光电子能谱(XPS)、拉曼(Raman)光谱等手段对激光处理前后样品的表面形貌、化学成分和结构进行测量和分析,进而对激光与聚四氟乙烯相互作用的机理进行了研究。实验结果表明,激光辐照使聚四氟乙烯表面产生去氟效应,导致表面碳化、分子链的交联以及含氧基团的产生,随着激光能量密度的增加,C=C双键逐渐形成。这些结构的变化可以导致表面硬度和粘结性增强。激光能量密度的大小对照射后样品表面的物理性质和化学结构有着重要的影响,它是聚合物表面激光改性和烧蚀的关键因素。     

94MeV Xe离子辐照引起的薄膜硅光学带隙变化研究

室温下,用94MeV的Xe离子辐照纳米晶和非晶硅薄膜以及单晶硅样品,辐照量分别为1.0×1011,1.0×1012和1.0×1013ions/cm2。所有样品均在室温下用UV/VIS/NIR光谱仪进行检测分析。通过对比研究了纳米晶、非晶、单晶硅样品的光学带隙随Xe离子辐照量的变化。结果表明,不同结构的硅材料中Xe离子辐照引起的光学带隙变化规律差异显著:随着Xe离子辐照量的增加,单晶硅的光学带隙基本不变,非晶硅薄膜的光学带隙由初始的约1.78eV逐渐减小到约1.54eV,而纳米晶硅薄膜的光学带隙则由初始的约1.50eV快速增大至约1.81eV,然后再减小至约1.67eV。对硅材料结构影响辐照效应的机理进行了初步探讨。     

Charging of Ion-Implanted Dielectrics by Electron Irradiation

Technical Physics - The charging kinetics of Al2O3 (sapphire) and SiO2 (α-quartz) dielectrics irradiated by inert gas ions (Ar+), metal ions (Ga+), and protons (H+) has been studied. It has...     

强流脉冲电子束作用下纯镍表面的应力特征

 利用强流脉冲电子束（HCPEB）装置对多晶纯镍进行轰击,采用X射线衍射及扫描电子显微镜等技术,详细分析了受轰击样品的变形组织与结构。通过分析建立了强流脉冲电子束诱发的应力特征与变形结构之间的关系,并对目前现有的几种应力波数值模拟结果进行了讨论。实验结果表明：强流脉冲电子束能够在材料表层诱发约5GPa的应力,造成纯镍表面发生孪生塑性变形。除了热膨胀引起的表层横向准静态热应力外,强流脉冲电子束产生的等离子体脉冲爆炸可以直接诱发幅值很高的冲击应力波,二者的共同作用是引起表层微观结构变化的直接原因。     

Modification of BPDA-ODA Polyimide Films by Diimides

Diimides 4,4′-oxydiphenylene diphthalylimide (PT-ODA-PT) and diphenylbiphenyltetracarboxyimide (A-BPDA-A) of an evident affinity to polyimides have been dispersed in a matrix of poly(4,4′-oxydiphenylene biphenyltetracarboxyimide) (BPDA-ODA). Changes in thermal and mechanical properties of BPDA-ODA films modified by diimides have been found to depend on the amount of diimide added and the conditions of film preparation (stretching). It has been established that diimides can play two different roles. When dissolved in polyimide, they act as plasticizers improving the segment mobility of BPDA-ODA chains, which may be critically needed to achieve the better molecular packing. The films plasticized by diimides show lower T _g and the order–disorder transition temperature; the unstretched films exhibit better tensile properties, compared to unmodified films. However, dispersed beyond the limit of solubility in polyimides, diimides have detrimental effects on mechanical properties of the films. Though changes of the thermal properties of compositions derived from BPDA-ODA polyimide and microparticular diimides are less expressed than those of polyimide films plasticized by diimides, the compositions have poorer ultimate strength and shorter elongation at break. The conclusion may be drawn that the mechanical properties of the films modified by microparticular diimide are mainly controlled not by the interfacial interaction matrix–microparticles, but more likely by the much stronger macromolecular chain–chain interaction.     

Modification of Zinc-Implanted Silicon by Swift Xenon Ion Irradiation

50 keV ⁶⁴Zn⁺ ions to a dose of 5 × 10¹⁶ cm^–2 are implanted into substrates of single-crystal n-type silicon. Then the samples are irradiated at room temperature with 167 MeV ¹³²Xe²⁶⁺ ions with a fluence ranging from 1 ×10¹² up to 5 × 10¹⁴ cm^–2. Changes in the structure and properties on the sample surface and in its body are studied by scanning electron microscopy, energy dispersive microanalysis, atomic force microscopy, time-of-flight secondary ion mass spectrometry, and photoluminescence.     

Modification of a Second-Generation HTS Tape Based on GdBCO(123) under Pulsed Electron Beam Irradiation

Physics of Wave Phenomena - Samples of composite second-generation high-temperature superconducting (HTS) tapes based on the GdBCO (123) compound have been irradiated in a pulsed electron...     

用电子束热蒸发技术制备ZnO薄膜

本文报道了用电子束热蒸发技术制备ZnO薄膜,薄膜具有（002）取向,通过电子扫描显微镜确认晶粒大小在150nm左右,现有的薄膜在525nm处有强的光致发光。     

荷能离子在C60薄膜中引起的辐照效应

用 Raman散射和 XPS技术分析了能量为几百 ke V到几百 Me V的多种离子在 C60 薄膜中引起的辐照效应.分析结果表明 ,在低能重离子辐照的 C60 薄膜中 ,其晶态向非晶态的转变过程是由核碰撞主导的.在快离子 (1 2 0 ke V的 H离子和171.2 Me V的 S离子 )辐照的情况下,电子能损起主导作用.发现在H离子辐照过程中,电子能损有明显的退火效应 ,致使 C60 由晶态向非晶态转变的过程中,经历了一个石墨化的中间过程;而在 S离子辐照的情况下 ,电子能损的破坏作用超过了退火效应 ,因此 ,在C₆₀ 由晶态向非晶态转变的过程中,无石墨化的中间过程.Irradiation effecs (mainly including transformation from crystalline into amorphous state) of C 60 films induced by 120 keV H, He, N, Ar, Fe and Mo ions, 240 keV and 360 keV Ar ions, and 171.2 MeV, 125.3 MeV and 75.8 MeV S ions were analysed by means of Raman scattering and XPS technique. The analysis results indicate that amorphization process in the cases of N, Ar, Fe and Mo ions irradiation is dominated by nuclear collision, but in the case of H ion irradiation, the process is...     

Modification of Magnetic Properties of a CoPt Alloy by Ion Irradiation

Physics of the Solid State - The effect of ion irradiation on magnetic properties of films of the ferromagnetic CoPt alloy fabricated by electron-beam evaporation has been studied. It is found that...     

银岛膜上偶氮苯单层膜的表面增强红外及表面增强拉曼光谱研究

银岛膜上偶氮苯单层膜的表面增强红外及表面增强拉曼光谱研究张锦赵江ａ于化忠ａ何会新ａ张浩力朱涛ａ力虎林刘忠范ａ（兰州大学化学系兰州７３００００）（ａ北京大学化学与分子工程学院智能材料研究中心（ＣＩＭＲ）北京１００８７１）ＳｔｒｕｃｔｕｒａｌＩｎｖｅｓ...     

激光刻蚀银纳米粒子岛膜的SERS特性

利用激光刻蚀的方法,通过改变激光脉冲的能量,制备出一系列的纳米金属银胶体。将银胶体沉积在铝基底上形成一层银岛膜。用紫外—可见吸收光谱、SEM及拉曼光谱对银胶体和银岛膜进行了表征。研究结果表明,刻蚀所用激光脉冲的能量影响胶体中银颗粒的分布;不同能量下制备的胶体所形成的银岛膜具有不同的表面增强效果;该岛膜具有增强效果优异、制备简便等特点。     

超薄Ag膜的椭偏光谱建模及解谱

用直流溅射法制备了6个不同厚度的超薄Ag膜。结合超薄Ag膜的结构特点,采用了Drude模型联合Lorentz Oscillator模型的解谱方法,得到1～6号样品的厚度分别为4.0,6.2,12.5,26.2,30.0和40.6 nm。从拟合结果的消光系数k图谱中发现,在1号到4号样品中分别于430,450,560和570 nm处出现了表面等离子体共振峰(SPR),随膜厚的增加共振峰宽化且峰位红移。最后,利用SPR理论计算出不同厚度Ag薄膜等离子体共振峰出现的位置,并和实验结果进行了比较。     

Investigation of a Contamination Film Formed by the Electron Beam Irradiation

Technical Physics - In the study of materials on electron probe devices in the field of action of the electron beam, a contaminating hydrocarbon film is formed, which affects the experimental...