对全入射角负折射二维光子晶体结构和电磁参量的研究

利用二维光子晶体的等频线分析原理和平面波展开方法,得到了使二维光子晶体产生全入射角负折射(All-Angle Negative Refraction,AANR)现象时,入射电磁波的频率取值范围.同时,分析了AANR频率范围随着结构参量(晶格类型、介质棒半径与晶格周期的比值)和电磁参量(介质柱介电常量、本底介电常量、入射电磁波偏振方向)变化的行为.结果表明:固定组成光子晶体的一种介质的介电常量,另一介质的介电常量只有达到一定阈值,才有可能使光子晶体出现AANR现象.在给定两种介质介电常量的条件下,存在使AANR频率范围最大化的结构参量和电磁参量.     

一种计算和分析二维光子晶体缺陷模式的方法

通过改进时域有限差分(FDTD)法,计算和分析了二维光子晶体的缺陷模式。运用一维时域有限差分算法和线性插值法在总场散射场(TF-SF)连接边界引入入射平面波,采用完全匹配层(PML)技术对外行波进行了有效吸收。计算和分析结果表明,在光子晶体非对称方向入射的平面波能激发所有的缺陷模式,选取合适的探测点位置收集电场值,经快速傅里叶变换(FFT)能得到所有的共振峰值。另外,采用该方法研究了二维正方介质柱光子晶体缺陷模的共振频率与缺陷介质柱半径和介电常量之间的关系。结果表明通过改变缺陷的半径和介电常量大小可以在光子晶体禁带中一定的范围内调节缺陷模式的共振频率大小。     

用特征矩阵法计算光子晶体的带隙结构

讨论了利用特征矩阵计算一维光子晶体的光子带隙结构的方法.利用此方法计算了不同介电常量、不同几何结构以及掺杂的晶体结构的带隙特征,并推广至介质介电常量ε随入射光波频率ω变化的情况. 关键词： 光子带隙 特征矩阵 缺陷态     

二维正方光子晶体波导中的慢光传输

采用平面波展开法分析了正方晶格光子晶体线缺陷波导中的慢光传输.数值模拟结果表明,介质柱光子晶体线缺陷波导中,缺陷模的群速度与填充比、缺陷处介质柱半径及与波导相邻介质柱半径有关,其中缺陷处介质柱半径对缺陷模的群速度影响最大;随着填充比和缺陷处介质柱半径的增大及与波导相邻介质柱半径的减小,缺陷模的群速度逐渐减小且最小减至0.015c.进而对比研究空气柱光子晶体线缺陷波导,发现缺陷模的群速度随着缺陷处空气柱半径的减小而减小,最小减至0.008c.     

二维正方光子晶体波导中的慢光传输

采用平面波展开法分析了正方晶格光子晶体线缺陷波导中的慢光传输.数值模拟结果表明,介质柱光子晶体线缺陷波导中,缺陷模的群速度与填充比、缺陷处介质柱半径及与波导相邻介质柱半径有关,其中缺陷处介质柱半径对缺陷模的群速度影响最大|随着填充比和缺陷处介质柱半径的增大及与波导相邻介质柱半径的减小,缺陷模的群速度逐渐减小且最小减至0.015c.进而对比研究空气柱光子晶体线缺陷波导,发现缺陷模的群速度随着缺陷处空气柱半径的减小而减小,最小减至0.008c.     

光子晶体光纤的正交函数模型

提出了一种用于分析光子晶体光纤的正交函数模型。采用一种新型超格子的构造方法,将光子晶体光纤的横向介电常量表示为两种周期性结构叠加。将横向电场以厄密一高斯函数展开,利用正交函数的性质,将全矢量波动方程转化为矩阵本征值问题,求解本征值问题可得到模式的传输常量及模场分布。利用此模型举例讨论了椭圆孔三角格子光子晶体光纤的模场分布和偏振特性以及三角格子光子晶体光纤的色散特性和有效面积等传输特性。作为一种普适的模型,此方法还可适用于四方结构、蜂窝结构及椭圆孔等多种结构光子晶体光纤。     

二维点缺陷三角晶格光子晶体的微腔结构

通过平面波展开法对二维点缺陷三角晶格光子晶体的微腔结构进行研究,计算得出其色散图以及缺陷模分布.结果表明:缺陷模波长与微腔谐振波长基本吻合.利用FDTD模拟谐振波长波段的电磁波在光子晶体中传播的动态演化过程,并计算出局域模的空间分布图.最后在有规律地改变缺陷周围介质柱半径的情况下实现谐振中心波长的可调性.     

由光子晶体局域模对称关系分析其简并性

使用平面波展开法计算了二维正方格子介质柱光子晶体在改变中央介质柱半径的情况下谐振腔的模式，根据所计算的局域模式场分布的对称关系，研究了二维光子晶体谐振腔模式的简并性.结果表明：具有C4v对称群光子晶体谐振腔，存在着二重简并偶极模和二重简并六极模，同时也存在非简并单极模和四极模，二重简并模的90°旋转态与其形成简并对.模式的简并与非简并可以直观地通过考察模式场分布的对称关系而得到.     

复介电常量双缺陷层的镜像对称光子晶体特性

利用传输矩阵法研究了两个复介电常量缺陷层镜像对称一维光子晶体的带隙结构和光传输特性。重点讨论了缺陷层的复介电常量的虚部为负值且光学厚度为λ0/4的情形时对传输特性的影响。研究发现:当在光子晶体的两端加入具有负虚部的复介电常量缺陷层后,多处出现了较强的透射峰增益。随着缺陷层复介电常量的虚部与实部比值的增加,各处透射峰增益变化规律不同。但中心波长处的缺陷膜的位置和高度不变。这为光子晶体同时实现多通道超窄带滤波器和不同放大倍数的光放大微器件的设计提供了理论基础。而在光子晶体的两端加入具有正虚部的复介电常量缺陷层后,各透射峰都出现了吸收现象,且随着其正虚部值I的增加,吸收越明显,这给光子晶体实现放大功能提供了理论指导。     

手征介质构成的面心立方光子晶体光子带结构计算

提出通过磁场分量计算手征介质组成的光子晶体光子带结构的平面波法．计算表明：手征介质“球形原子”在介电体中排列所组成的面心立方光子晶体和介电体“球形原子”在手征介质中排列所组成的面心立方光子晶体的光子带结构，均存在截止频率，在该频率以下无传播模存在．并与由电场分量计算的结果作了比较，讨论了出现差异的原因 关键词：     

一维光子晶体的缺陷模特性研究

利用传输矩阵法研究了缺陷层有吸收的一维光子晶体的带隙结构，在中心波长附近利用泰勒展开式的一级近似得到了缺陷模的高度和半峰全宽的计算公式.研究发现，消光系数、介质周期数和缺陷层厚度对缺陷模高度的影响较大，它们的增大均使缺陷模高度快速下降;而对半峰全宽的影响主要取决于介质的周期数，随周期数的增大缺陷模快速变窄.     

Graphene based photonic crystal optical filter: Design and exploration of the tunability

Optical characteristics of two new graphene based photonic crystals are studied in detail. A structure containing alternating layers of graphene and SiO₂ slabs is considered as the ideal crystal. The dependency of the photonic band gaps (PBGs) to the dielectric layer thickness and the period number is explored at first step. Potential of the proposed crystal to be used as an optical filter is then investigated. Adding a nonlinear electro-optic polymer as a defect layer, the alterations of the optical features are inspected. Results show that the defect layer insertion causes a resonant mode inside the PBGs. However, the location of the defect layer inside the crystal is very effective on both the frequency and width of the resonant mode. Tunability of the optical features is probed by taking into account of the dependencies to the wave incident angle, graphene chemical potential and the applied external voltage to the defect layer.     

On transmittance and localization of the electromagnetic wave in two-dimensional graphene-based photonic crystals

Two-dimensional graphene-based photonic crystal (GPC) formed by a periodic array of the homogeneous dielectric cylinders etched in the alternating graphene and dielectric layers and its inverse counterpart are considered. The transmittance of the photonic crystal is obtained. The waveguide due to the localization of the electromagnetic wave on the lattice defect that breaks the translational symmetry of the GPC of two different topologies is studied. The different topologies of GPC are characterized by different photonic band structures with different widths of photonic band gaps (PBG) and provide different frequencies for the localized electromagnetic wave due to the defect. The frequencies of the localized mode for both type of the GPC, located inside the lowest PBG, are in the range of THz or tens of THz depending on the topology of the GPC. It is shown that the photonic band gap always can be tuned by changing the chemical potential of graphene to provide formation of the localized photonic mode due to the defect. The technological advantages of the GPC, as well as the opportunity to tune the PBG and the frequency of the localized electromagnetic wave in the terahertz region of spectrum for the GPC are discussed.     

Optical defect modes at an active defect layer in photonic liquid crystals

An analytic approach to the theory of the optical defect modes in photonic liquid crystals in the case of an active defect layer is developed. The analytic study is facilitated by the choice of the problem parameters related to the dielectric properties of the studied structures. The chosen models allow eliminating polarization mixing at the external surfaces of the studied structures. The dispersion equations determining the relation of the defect mode (DM) frequency to the dielectric characteristics of an isotropic, birefringent and absorbing (amplifying) defect layer and its thickness are obtained. Analytic expressions for the transmission and reflection coefficients of the defect mode structure (DMS) (photonic liquid crystal-active defect layer-photonic liquid crystal) are presented and analyzed. The effect of anomalously strong light absorption at the defect mode frequency for an absorbing defect layer is discussed. It is shown that in a distributed feed-back lasing at the DMS with an amplifying defect layer, adjusting the lasing frequency to the DM frequency results in a significant decrease in the lasing threshold and the threshold gain decreases as the defect layer thickness increases. It is found that, generally speaking, the layer birefringence and dielectric jumps at the interfaces of the defect layer and photonic liquid crystal reduce the DM lifetime in comparison with the DMS with an isotropic defect layer without dielectric jumps at the interfaces. Correspondingly, generally speaking, the effect of anomalously strong light absorption at the defect mode frequency and the decrease in the lasing threshold are not so pronounced as in the case of the DMS with an isotropic defect layer without dielectric jumps at the interfaces. The case of a DMS with a low defect layer birefringence and sufficiently large dielectric jumps are studied in detail. The options of effectively influencing the DM parameters by changing the defect layer dielectric properties, and the birefringence in particular, are discussed.     

2维光子晶体谐振腔的分析与模拟

 为指导光子晶体谐振腔的设计,运用3维电磁场仿真软件HFSS模拟了2维光子晶体谐振腔,分析了影响2维光子晶体谐振腔的主要特性参数,主要包括所插介质杆的排列结构、介电常数及其半径和间距。研究表明,在其它条件保持不变时,若增大介质杆半径,则同一模式频率没有同一的变化规律;若增大介质杆介电常数,则出现的规则模式减少,并且没有基模出现,同一个模式,频率明显降低;若增大介质杆间距,则计算的频率间隔减小,对其它参数影响不大,只是同一模式的频率略有减小。     

Decay distribution of spontaneous emission from atoms in one-dimensional photonic crystal

Spontaneous emission behavior from atoms (or molecules) in one-dimensional photonic crystal with a defect is investigated. Taken all the TE and TM modes into account, the normalized spontaneous emission rate of the atom is calculated as a function of the position of the atom in the crystal. Results for both nonabsorbing dielectric structure and absorbing dielectric structure are presented. With the increase of the thickness of the defect in which the atoms are embedded, the oscillations of the spontaneous emission rate versus the position of the atom become dense and the lifetime distribution becomes narrow and sharp. The PC effect may lead to the coexistence of both accelerated and inhibited decay processes.     

Near-infrared tunable narrow filter properties in a 1D photonic crystal containing semiconductor metamaterial photonic quantum-well defect

The near-infrared (NIR) narrow filter properties in the transmission spectra of a one-dimensional photonic crystal doped with semiconductor metamaterial photonic quantum-well defect (PQW) were theoretically studied. The behavior of the defect mode as a function of the stack number of the PQW defect structure, the filling factor of semiconductor metamaterial layer, the polarization and the angle of incidence were investigated for Al-doped ZnO (AZO) and ZnO as the semiconductor metamaterial layer. It is found that the frequency of the defect mode can be tuned by variation of the period of the defect structure, polarization, incidence angle, and the filling factor of the semiconductor metamaterial layer. It is also shown that the number of the defect mode is independent of the period of the PQW defect structure and is in sharp contrast with the case where a common dielectric or metamaterial defect are used. The results also show that for both polarizations the defect mode is red-shifted as the number of the defect period and filling factor increase. An opposite trend is observed as the angle of incidence increases. The proposed structure could provide useful information for designing new types of tuneable narrowband filters at NIR region.     

Investigation of defect modes in a defective photonic crystal with a semiconductor metamaterial defect

In this work, we theoretically investigate the properties of defect modes in a defective photonic crystal containing a semiconductor metamaterial defect. We consider the structure, (LH)^N/D^P/(LH)^N, where N and P are respectively the stack numbers, L is SiO₂, H is InP, and defect layer D is a semiconductor metamaterial composed of Al-doped ZnO (AZO) and ZnO. It is found that, within the photonic band gap, the number of defect modes (transmission peaks) will decrease as the defect thickness increases, in sharp contrast to the case of using usual dielectric defect. The peak height and position can be changed by the variation in the thickness of defect layer. In the angle-dependent defect mode, its position is shown to be blue-shifted as the angle of incidence increases for both TE and TM waves. The analysis of defect mode provides useful information for the design of tunable transmission filter in semiconductor optoelectronics.     

基于量子阱效应的光开关

把三块各带有一个缺陷的光子晶体结合起来,如果中央晶体的缺陷模处在两侧晶体的禁带中,缺陷模内的光波会受到两侧晶体的阻碍并被局域在中央晶体内,形成量子阱结构;若一侧晶体的缺陷模被移动到中央晶体缺陷模处,则只有一侧晶体阻碍在中央晶体缺陷模内传播的光波,量子阱效应完全消失,光的传输受到最大程度的阻碍.这种结构可同时具有窄带滤波器和光开关的功能,据此提出了一种高效的、灵敏的光开关的设计.采用传输矩阵法计算了一维光子晶体的透射谱和场分布.     

二维三角晶格光子晶体三通道解波分复用器

为了实现结构紧凑、高透射率的解波分复用功能,在二维三角晶格光子晶体平板上设计了一个ψ形的三通道解波分复用器.通过在该光子晶体结构中引入合适的线缺陷和点缺陷,使得在光子禁带中出现了局域缺陷态.利用该缺陷态模式,可以控制波的传播和耦合,从而实现解波分复用的功能.通过用平面波扩展法和时域有限差分法对此解波分复用器进行了能带和传输特性分析,找到了具有合适缺陷态频率的光子晶体结构参量,实现了透过率高达80%的解波分复用功能.