HgTe/CdTe superlattices grown by molecular beam epitaxy

In this paper we present results concerning the optical absorption in HgTe-CdTe superlattices. We confirm the narrowing of the superlattice band-gap (the increase of cut-off wavelength, λ_c) compared to the band gap of the equivalent Hg_1?xCd_xTe alloy. We show also, as predicted by the theory, an increase of the cut-off wavelength of the superlattice when the HgTe layer thickness increases. At 300K, the agreement between theory and experiment is fairly good if we consider the onset of the absorption. The λ_c tail shifting towards shorter wavelengths could be explained by the interdiffusion between HgTe and CdTe layers. At 30K, no important change in the I.R. absorption is noticed for all the superlattices.We present for the first time a superlattice exhibiting an absorption in the 8–12 μm window.We have carried out Hall measurements on several superlattices and present for the first time transport properties on these alternate microstructures. The most important features concern the unexpected and not yet understood very high hole mobilities at 10K.     

非晶Si/SiO2超晶格的制备及其光谱研究

用磁控溅射方法在玻璃基底上制备了非晶Si/SiO₂超晶格.利用透射电子显微镜 (TEM) 和X射线衍射技术对其结构进行了分析,结果表明,超晶格中Si层大部分区域为非晶相,局域微区呈现有序结构,其厚度由1.8—3.2nm变化,SiO₂层厚度为4.0nm.并采用多种光谱测量技术,如吸收光谱、光致发光光谱和Raman光谱技术,对该结构的光学性质进行了系统研究.结果表明,随纳米Si层厚度的减小,光学吸收边以及光致荧光峰发生明显蓝移,Raman峰发生展宽,即观测到明显的量 关键词：     

Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices

The self-organization growth of In_0.32Ga_0.68As/GaAs quantum dots (QDs) superlattices is investigated by molecular beam epitaxy. It is found that high growth temperature and low growth rate are favorable for the formation of perfect vertically aligned QDs superlattices. The aspect ratio (height versus diameter) of QD increases from 0.16 to 0.23 with increase number of bi-layer. We propose that this shape change play a significant role to improve the uniformity of QDs superlattices. Features in the variable temperature photoluminescence characteristics indicate the high uniformity of the QDs. Strong infrared absorption in the 8–12 μm was observed. Our results suggest the promising applications of QDs in normal sensitive infrared photodetectors.     

Properties of manganite/ruthenate superlattices with ultrathin layers

The properties of manganite/ruthenate superlattices are reviewed with a specific focus on the manganite/ruthenate interface. La_0.7Sr_0.3MnO₃/SrRuO₃ and Pr_0.7Ca_0.3MnO₃/SrRuO₃ superlattices grow with a high crystalline perfection as illustrated in the figure to the right: at the interface the individual cation species can be clearly identified, interdiffusion is marginal. The superlattices show magnetization processes with an intricate interplay between magnetocrystalline anisotropy, size of the layer magnetization, spin confinement and interfacial antiferromagnetic interlayer coupling. There is further an unprecedented Curie temperature stabilization at room temperature values of the La_0.7Sr_0.3MnO₃ layers in the superlattices down to layer thicknesses of one unit cell. The magnetotransport properties, especially the Hall effect, indicate the existence of a quasi‐two‐dimensional hole gas at the La_0.7Sr_0.3MnO₃/SrRuO₃ interface; this is further supported by an analysis of cation displacements as determined from scanning transmission electron microscopy. The manganite/ruthenate interface might be considered as a model system for the study of interfacial reconstruction and charge transfer in a highly correlated ferromagnetic system.

     

Optical absorption of In1−xGaxAsGaSb1−yAsy superlattices

The formation of subbands in In_1?xGa_xAsGaSb_1?yAs_y superlattices has resulted in entirely different absorption characteristics from those of the host semiconductors. The measured absorption edges agree with the calculated energy gaps of the superlattices of various configurations, establishing that the conduction bandedge of InAs lies approximately 0.15eV below the valence bandedge of GaSb.     

Time-resolved spectra and kinetics of the exciton photoluminescence in different types of GaAs/AlAs superlattices

The temperature dependence of the recombination dynamics of excitons is investigated by time-resolved photoluminescence spectroscopy in(GaAs)_n / (AlAs)_n superlattices, where n denotes the layer thickness in monolayers, for different types of band structures. In direct-gap superlattices with a layer thickness of the order or larger than the exciton Bohr radius, the carrier dynamics is dominated by the transfer from light-hole to heavy-hole excitons. When the layer thickness becomes smaller than the exciton radius, the dynamics of free excitons is controlled by localization. vb In quasi-direct and indirect-gap superlattices, the influence of lateral potential fluctuations due to interface roughness completely governs exciton recombination.     

Ab initio calculation of optical absorption and reflectivity of Si(0 0 1)/SiO2 superlattices with varying interfaces

Using first-principles calculations we investigate the influence of interface modification and layer thicknesses on the optical properties of Si/SiO₂ superlattices. Four interface models with different dangling-bond passivation are considered. The results demonstrate confinement effects not only for the fundamental band gaps but also for the optical properties. While for a large Si layer thickness of the Si/SiO₂ superlattices the interface dependence is small, the calculations show a significant structure dependence for thin Si layers. © 2007 Elsevier Science. All rights reserved.     

［（SrTiO3）n/（SrTi0.8Nb0.2Ｏ3）m］20/LaAlO3超晶格的制备及其激光感生热电电压效应

采用脉冲激光沉积（PLD）镀膜技术在倾斜10°的LaAlO₃（100）单晶衬底上制备了（SrTiO₃）_n/（SrTi0.8Nb_0．2Ｏ₃）_m系列超晶格.在超晶格薄膜的XRD图谱中清楚地观察到周期调制的卫星峰结构.从卫星峰的分布计算了超周期,进而得到了在生长SrTiO₃和SrTi_0．8Nb_{0．2< 关键词： 3}）_n/（SrTi_0．8Nb_0．2Ｏ₃）_m］20/LAO（100）超晶格')" href="#">［（SrTiO₃）_n/（SrTi_0．8Nb_0．2Ｏ₃）_m］20/LAO（100）超晶格 激光感生热电电压 各项异性Seebeck系数 原子层热电堆     

Semimetallic electrical transport in PbTe-SnTe superlattices on KCl substrate

The electrical resistivity and Hall coefficient (R_H) in PbTe-SnTe superlattices on KCl are measured between 4.2 and 300 K. Magnetic field dependence of R_H shows a sign inversion of R_H for a specimen of PbTe-SnTe with 100-50 A at 5 K. This is due to coexistence of electrons and holes. PbTe-SnTe superlattices are of type II, where the valence band edge of SnTe is higher than the conduction band edge of PbTe. From the magnetic field dependence of R_H, the electron and hole concentrations are calculated and the band-offset between PbTe and SnTe is estimated. The possibility of the structural phase transition of these superlattices is also discussed.     

Optical absorption in silicon doping superlattices

The optical absorption beyond the fundamental edge in moderate to large period silicon doping superlattices of various designs is studied theoretically. At 1.3 μm, the largest absorption coefficient found is 0.2 cm⁻¹. Only moderate external biases are required to reach maximum absorption.     

NiFeCo/Cu superlattices with high magnetoresistive sensitivity and weak hysteresis

The microstructure and the magetoresistive characteristics of [NiFeCo/Cu]₈ superlattices prepared by magnetron sputtering with various thickness of the buffer NiFeCr layer and exhibiting a giant magnetoresistive effect have been studied. It has been found that these nanostructures are formed with a strong or weak hysteresis depending on the structure (bcc or fcc) formed in the NiFeCr buffer layer. The method of the substantial decrease in the hysteresis loop width of the magnetoresistance by using the composite Ta/NiFeCr buffer layer has been suggested.     

Optical properties of antiferromagnetic/ion-crystal superlattices

Transmission, refraction and absorption properties of an antiferromagnetic/ion-crystal superlattice are investigated. The transmission spectra based on FeF₂/TlBr superlattices reveal that there exist two intriguing guided modes in a wide stop band. Additionally, FeF₂/TlBr superlattices possess either the negative refraction or the quasi left-handedness, or even simultaneously hold them at certain frequencies of two guided modes, which require both negative magnetic permeability of antiferromagnetic layers and negative permittivity of ion-crystal layers. Frequency regimes of the guided modes will be dependent on the magnitude of the external magnetic field. Therefore, handedness and refraction properties of the system can be manipulated by modifying the external magnetic field. Absorption spectra exhibit that absorption corresponding to guided modes is noticeable.     

Impurities in type-II-staggered InAs/AℓSb superlattices

The physics of impurities in Type-II staggered superlattices is reviewed, with emphasis on changes of doping character, such as shallow to deep and deep to false-valence transitions, that can result from altering layer thicknesses. It is shown how some impurities can change their doping characters from "deep acceptors" (semi-insulating) to shallow donors (n-type) as functions of layer thicknesses in superlattices such as InAs/AℓSb. A particularly important case is an Aℓ_Sb antisite defect in an AℓSb layer of an InAs/AℓSb superlattice. This defect is a deep trap or "deep acceptor" in AℓSb, and a remote donor in some superlattices, depending on the layer thicknesses. It can, by itself, control the electron gas density in a superlattice structure, and so can play an important role in the development of high-speed field-effect transistors.     

Quasi-two-dimensional ferroelectricity in KNbO<Subscript>3</Subscript>/KTaO<Subscript>3</Subscript> superlattices

First-principles density functional theory is used to calculate the phonon spectrum in the paraelectric phase, the ground-state structure and polarization distribution in the polar phase, and energies of ferro- and antiferroelectrically ordered phases of free-standing (KNbO₃)₁(KTaO₃) _n ferroelectric superlattices with n = 1–7. It is established that quasi-two-dimensional ferroelectricity with polarization oriented in the layer plane, which weakly interacts with polarization in neighboring layers, appears in potassium niobate layers with a thickness of one unit cell in the superlattices. The possibility of using of such ferroelectric superlattices as a medium for three-dimensional information recording is shown.     

Absorption measurements at high pressure (0–10kbar) on strained superlattices

Absorption data on strained GaAs_1?xP_x-GaAs superlattices (SL, 128-period, barrier size L_B≈75 Å, quantum-well size L_z≈75 Å, alloy composition x≈0.25) are presented in the range 0–10 kbars. The absorption curves obtained show no exciton show no exciton peaks such as seen in lattice- matched Al_xGa_1?xAs-GaAs SL's, and the pressure coefficient decreases from 11.5 meV/kbar to ≈ 10.5 meV/kbar in the wells and ≈6.5 meV/kbar at energies approaching and above the barrier energies. This behavior is attributed to the fluctuations in strain caused by the alloy disorder, and clustering, of the barriers.     

Intersubband transitions in InAs/GaSb semi-metallic superlattices

Magnetic field orientated parallel to the superlattice layers enables intersubband absorption to occur for normally incident light. We investigate semi-metallic InAs/GaSb superlattices in this configuration, presenting data over a wide range of InAs well widths. For narrow wells, the reduced absorption coefficient means that an alternative waveguide configuration, where the light makes about 4 or 5 passes through the sample is used. In this second configuration we see further activation of the intersubband resonance by the parallel field. The intersubband energy and absorption characteristics are studied over a large range of well widths and compared with results from 8-band k·p calculations.     

Effect of domain wall on the dielectric properties of the BaTiO3/SrTiO3 superlattices

Based on a phenomenological thermodynamical theory, the effect of the domain wall on the dielectric properties of the polydomain BaTiO₃/SrTiO₃ superlattices with 180° electric domains in the BaTiO₃ layer is investigated. Theoretical analysis indicates that complete polarization suppression and the largest dielectric response take place at approximately 72% and 53% of the critical volume fraction of the SrTiO₃ layer for the domain wall energy parameter A=3×10⁷ and 5×10⁷, respectively. The dielectric properties largely depend on both the volume fraction of the SrTiO₃ layer and the domain wall energy parameter. Moreover, the gigantic dielectric response which occurs in single-domain BaTiO₃/SrTiO₃ superlattices cannot appear due to the 180° polydomain state in the BaTiO₃ layer, which is in agreement with the previous prediction. The high domain wall energy parameter results in the stabilization of the paraelectric state in the BaTiO₃ layer, however, the enhancement of the domain wall energy parameter within a certain scale increases the dielectric properties greatly.     

Critical thickness and stress relaxation in YBaCuO (123) strained epitaxial layers and YBaCuO based strained superlattices

An energy model has been used to calculate the critical thickness h _c of YBaCuO thin films and YBaCuO based superlattices within an isotropic or anisotropic approximation. The critical thickness of single layers calculated from the anisotropic model (16 nm) is in good agreement with the previously published experimental values which are spread out from 4 to 20 nm. In the case of superlattices, relaxation appears to be governed by the critical thickness of the elementary sub-layers and is then better evaluated through the calculation performed for YBaCuO single layers. XRD measurements on YBa₂Cu₃O₇/PrBa₂Cu_3?xGa_xO₇ superlattices grown on {100{ SrTiO₃ have evidenced a tetragonal stress in the YBaCuO ab plane which remains expanded when the YBaCuO elementary layer thickness is lower than 4.8 nm (4 YBaCuO cells). However the critical temperature of the shortest period superlattices is only slightly affected by this expanded stress in contrast to the effect of an elastic stress externally applied along the ab plane of YBaCuO thin films.     

Methods of measuring the nonlinear-optical coefficients of the refractive index of nonlinear media

A cousistent analysis of a method of measuring the coefficient n ₂ of the Kerr nonlinearity and the two-photon absorption coefficient in presented. The method is based on the study of the dependence of the nonlinear transmittance with respect to the far-field axial intensity of the laser beam on the position of the layer of the nonlinear medium on the z (longitudinal) coordinate of this beam (z scanning). The possibility for the measurement of n ₂ and the two-photon (multiphoton) absorption coefficient based on the study of the far-field variations in the spatial profile of the beam having passed through the nonlinear medium is also analyzed. The calculations prove the efficiency of the new method for measuring n ₂ and the two-photon (multiphoton) absorption coefficient.     

Type III - Type I transition and strain-effect in Hg1−xCdxTeCdTe and Hg1−xZnxTeCdTe superlattices

In this paper, the results of Hg_1−xZn_xTeCdTe strained layer superlattices grown by MBE are reported, and compared to Hg_1−xCd_xTeCdTe superlattices. Both Type III and Type I Hg_1−xZn_xTeCdTe superlattices with different strain have been grown on CdTe(111)B/GaAs(100) and CdTe(100)/GaAs(100) substrates and characterized by electron, X-ray diffraction, infrared transmission and Hall measurements. The values of hole mobility between 5×10³ up to 2×10⁴cm²v⁻¹s⁻¹ at T = 23K along (111)B growth orientation and up to 4.9×10⁴cm²v⁻¹s⁻¹ at T = 5K along (100) growth orientation are obtained for Type III superlattices whereas in Type I superlattices, the hole mobility is between 200–300cm²v⁻¹s⁻¹. This drastic change in the hole mobility between Type III and Type I superlattices along with the role of the strain are discussed in this paper.