The ionization energies and the polarizabilities of a donor in an isolated well of a quasi two dimensional (Q2D) GaAs/Ga1−xAlxAs heterostructure have been obtained for different well widths including electron-lattice coupling. A wave function that
properly reduces to the hydrogenic function in the limiting case has been used. For fields of the order of 105 V/m, the ionization energies decrease slightly with electric fields for all well widths (10 nm to 50 nm) studied. Also for
a given electric field, as the well width increases, the ionization energy decreases. For fields of the order of 107 V/m and for smaller well widths (<10 nm), the ionization energy generally increases with electric field. The results also
show that for electric fields of this order, no donor bound state associated with the lowest subband is possible for well
widths greater than 20 nm. The polarizabilities estimated using the expression for the dipole operator show that as the well
width increases, the polarizability values also increase and do not show any abnormal behaviour. 相似文献
The effects of an applied electric field on quantum well subband energies are calculated variationally within the effective mass approximation for model potential profiles. The concept of a quasi-bound state is examined critically. For higher electric field values it is shown that the quasi-bound state approximation for the ground and first excited state of the electron, and for the ground state of the hole is valid. 相似文献
In this paper the effect of the laser field on the nonlinear optical properties of a square quantum well under the applied electric field is investigated theoretically. The calculations are performed in saturation limit using the density matrix formalism and the effective mass approach. Our results show that the laser field considerably effects the confining potential of the quantum well and thus the nonlinear optical properties. 相似文献
The energy levels of a polaron in a wurtzite nitride finite parabolic quantum well (PQW)are studied by a modified Lee-Low-Pines variational method. The ground state of the polaron, the transition energy from first exited state to the ground state and the
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氮化物抛物量子阱
电子-声子相互作用
极化子 相似文献
Analytical solutions of the Schrödinger equation for the one‐dimensional quantum well with all possible permutations of the Dirichlet and Neumann boundary conditions (BCs) in perpendicular to the interfaces uniform electric field are used for the comparative investigation of their interaction and its influence on the properties of the system. Limiting cases of the weak and strong voltages allow an easy mathematical treatment and its clear physical explanation; in particular, for the small , the perturbation theory derives for all geometries a linear dependence of the polarization on the field with the BC‐dependent proportionality coefficient being positive (negative) for the ground (excited) states. Simple two‐level approximation elementary explains the negative polarizations as a result of the field‐induced destructive interference of the unperturbed modes and shows that in this case the admixture of only the neighboring states plays a dominant role. Different magnitudes of the polarization for different BCs in this regime are explained physically and confirmed numerically. Hellmann‐Feynman theorem reveals a fundamental relation between the polarization and the speed of the energy change with the field. It is proved that zero‐voltage position entropies are BC independent and for all states but the ground Neumann level (which has ) are equal to while the momentum entropies depend on the edge requirements and the level. Varying electric field changes position and momentum entropies in the opposite directions such that the entropic uncertainty relation is satisfied. Other physical quantities such as the BC‐dependent zero‐energy and zero‐polarization fields are also studied both numerically and analytically. Applications to different branches of physics, such as ocean fluid dynamics and atmospheric and metallic waveguide electrodynamics, are discussed.
The effect of the valence band coupling on the excitonic spectrum of an undoped GaAsAlxGa1−xAs quantum well subjected to a normal electric field is examined. The exciton states are split because of the spin-splitting of the hole subbands. The binding energies of the (00h) and (001) excitons are noticeably increased. The transition strength of the “forbidden” (01h) exciton is enhanced both by the electric field and the strong mixing of the hole states. The binding of the 001 exciton is further increased because it exhibits a Fano-like resonance with the electron-heavy hole continuum. 相似文献
GaAs/AlAs single quantum well structures designed with well thickness near the type-I/type-II crossover show distinctive photoluminescence peaks corresponding to both type-I and type-II recombinations. Photoluminescence measurements as a function of applied electric field and temperature ranging from 23 to 180 K and current–voltage measurements are presented for two MBE-grown structures clad with Si-doped Al0.45Ga0.55As layers onn + -GaAs [100] substrates. The large and field-dependent energy separation between type-I and type-II luminescence peaks is understood to arise from the build-up of electrons at the X point in the AlAs barrier. 相似文献
Based on the effective-mass approximation, the competition effects between the laser field and applied electric field on impurity states have been investigated variationally in the ZB GaN/AlGaN quantum well (QW). Numerical results show that for any laser field, the electric field makes the donor binding energy present asymmetric distribution with respect to the center of the QW. Moreover, when the laser field is weak, the electric field effects are obvious on the donor binding energy; however, the electric field effects are insensitive to the variation of donor binding energy in the ZB GaN/AlGaN QW with strong laser field. 相似文献
In this work we study the binding energy of the ground state for a hydrogenic donor impurity in laterally coupled GaAs/Ga1−xAlxAs quantum well wires, considering the simultaneous effects of hydrostatic pressure and applied electric field. We have used a variational method and the effective mass and parabolic band approximations. The low dimensional structure consists of two quantum well wires with rectangular transverse section coupled by a central Ga1−xAlxAs barrier. Our results are reported for several sizes of the structure and we have taken into account variations of the impurity position along the growth direction of the heterostructure. 相似文献
In this present study, the effects of electric and magnetic fields on the nonlinear optical rectification and second-harmonic generation in a graded quantum well under intense laser field have been investigated theoretically. The energy eigenvalues and their corresponding eigenfunctions are obtained by solving Schrödinger equation within the framework of effective mass approximation. The analytic expressions for the optical properties are calculated by the compact-density-matrix approach and iterative method. The numerical results are presented for a typical GaAs/Ga1?xAlxAs quantum well. The results show that the nonlinear optical rectification and second-harmonic generation coefficients are considerably affected by the electromagnetic fields and intense laser field. 相似文献
The effect of conduction band nonparabolicity on the linear and nonlinear optical properties such as absorption coefficients, and changes in the refractive index are calculated in the Al0.3Ga0.7As/GaAs heterostructure-based symmetric rectangular quantum well under applied hydrostatic pressure and electric field. The electron envelope functions and energies are calculated in the effective mass equation including the conduction band nonparabolicity. The linear and nonlinear optical properties have been calculated in the density matrix formalism with two-level approximation. The conduction band nonparabolicity shifts the positions of the optical properties and decreases their strength compared to those without this correction. Both the optical properties are enhanced with the applied hydrostatic pressure. While the absorption coefficients are bleached under the combined effect of high pressure and electric field, the bleaching effect is reduced when nonparabolicity is included. 相似文献
By using an appropriate coordinate transform we have calculated the intersubband optical absorption in the single square well under a tilted magnetic field. In this study the dependence of the intersubband transitions on the magnetic field strength and the direction of the magnetic field (tilt angle) is discussed. We show that intersubband optical absorption is sensitive to the tilt angle. This behaviour in the intersubband optical absorption gives a new degree of freedom in regions of interest device applications. 相似文献
We have directly demonstrated that homogeneous photoexcitation of a quantum well in presence of uniform tilted magnetic field gives rise to a set of bypass in-plane electric currents of a different value which may flow even in the opposite directions simultaneously. The effect has been observed in an asymmetric InAs quantum well under the Landau quantization. Theoretical model of the effect are discussed as well as the related problems. 相似文献
The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected. 相似文献
A variational approach is used to study the ground state of a bound polaron in a spherical quantum dot under an external electric field. The binding energy of the hydrogenic impurity state is calculated by taking the interaction of an electron with both the confined longitudinal optical phonons and the surface optical phonons into account. The interaction between impurity and longitudinal optical phonons has also been considered to obtain the binding energy of a bound polaron. It shows that the polaron effects give significant corrections to the binding energy and its Stark energy shift. The external electric field increases the phonon contributions to the binding energy. 相似文献
The kinetics of the indirect recombination of electrons and holes in wide single quantum wells in a strong electric field has been analyzed. It has been shown that the recombination time increases exponentially up to 20 μs due to the spatial separation of oppositely charged particles. The results of a theoretical model predicting the behavior of the recombination time as a function of the applied field are in good agreement with experimental data. 相似文献
InxGaN/ZnSnN2 quantum well structures are studied in terms of a binding energy of a donor atom. 1s and impurity states are considered. The Schrödinger's and Poisson's equations are solved self-consistently. A hydrogenic type wave function to represent each impurity state is assumed. The calculations include band-bending in the potential energy profile introduced by the built-in electric field existing along the structures. The binding energy and the energy of the transition between the impurity states are represented as a function of the quantum well width, the donor position, and the indium concentration. An external magnetic field up to 10 T is included into the calculations to compute the Zeeman splitting. The maximum value of the transition energy is around 30 meV (nearly 7.3 THz) which occurs in a 15-Å In0.3Ga0.7N/ZnSnN2 quantum well. Being strong, the built-in electric field makes the transition energy drop quickly with the decreasing well width. For the same reason, the energy curves are found to be highly asymmetric function of the donor position around the well center. Compared to the bulk value, the transition energy in the quantum well structures enhances nearly two-fold. 相似文献
We derive the stationary tunneling solution for charged particles moving in a spherical, 3-dimensional zero-range potential plus a constant electric field. From the analytic expression for the wave function we calculate the distribution of the current inside and outside the vacuum barrier. At low field strengths there is a constant spreading of the tunnel current orthogonal to the direction of the applied field. At intermediate field strengths the exact results for the current distribution behave different from the semiclassical predictions. 相似文献
Ionization energies of a shallow donor in a quantum well of the Cd1-xinMnxinTe/Cd1-xoutMnxoutTe superlattice system are obtained. A variational procedure within the effective mass approximation is employed in the presence of magnetic field. Within the one-electron approximation the occurrence of Mott transition is seen when the binding energy of a donor vanishes is observed. The effects of Anderson localization and exchange and correlation in the Hubbard model are included in our model. It is found that the ionization energy (i) decreases as well width increases for a given magnetic field, (ii) decreases when well width increases, (iii) the critical concentration at which the metal–insulator transition occurs is enhanced in the external magnetic field and (iv) spin polaronic shifts not only with the increase in a magnetic field but also with the well width increases. All the calculations have been carried out with finite barriers and the results are compared with available data in the literature. 相似文献