ZnS中Te等电子中心的时间分辨光谱研究

用时间分辨光谱研究了很大的Te组分范围内的ZnS_1-xTe_x（x=00 05—085）合金的发光动力学特性，结果表明：不同形态的Te等电子中心具有不同的辐射复 合寿命，从几个ns到几十个ns的范围内变化，当x＝015左右时，寿命达到最大值（约 40ns）.其物理机理源于不同的Te等电子中心具有不同的局域化特性.当Te组分较小时，等 电子中心从Te₁逐渐演变到Te₂，Te₃或Te₄ 时，相应发光寿命增加，表现出不断增强 的激子发光局域化特性；而当Te组分较大时，Te原子团变得较大，其局域势与基体原子势的 相互作用增强，等电子中心的局域化特性减弱，而基体价带扩展态特征变得明显起来，相应 发光寿命逐渐减小.还研究了激子束缚能随Te组分的变化以及发光强度随温度的变化关系， 所得结果进一步支持了时间分辨光谱研究所得到的结论. 关键词： ZnS 等电子中心 时间分辨光谱 局域态     

Electroreflectance studies of thin GaAs/AlGaAs quantum well structures with tunable 2DEG densities

We report the results of low-temperature electroreflectance (ER) and photoluminescence (PL) investigations on thin n-type modulation-doped GaAs/AlGaAs single quantum well structures. The density of the two-dimensional electron gas (2DEG) is varied continuously from zero to N_s∼6*10¹¹ cm^-2, using a Schottky gate, and is detected optically via the Stokes shift between the ER and PL subband transitions. For the first time, the splitting between transitions involving the first electron subband and the first heavy and light hole subbands, respectively, is studied as a function of the 2DEG density using ER spectroscopy. The results are discussed in comparison with the calculated in-plane dispersion of the hole subbands. Clear evidence is given for the influence of exciton screening effects.     

Charged and neutral biexciton–exciton cascade in a single quantum dot within a photonic bandgap

We investigate the recombination dynamics of positively charged and neutral biexcitons and excitons in a single InAs/GaAs quantum dot (QD) within a two-dimensional (2D) photonic bandgap (PBG). The 2D PBG makes the exciton lifetime four times longer and enhances photon-extraction efficiency compared to those without the PBG. Photon cross-correlation measurements demonstrate the cascade emissions of both charged and neutral biexcitons–excitons from the same QD. In the charged case, a hole in the p-shell relaxes into the s-shell between the cascade, and the corresponding transition is confirmed based on the spin configuration. The long exciton lifetime with the PBG helps us to reveal the spin dynamics that did not clearly appear in intrinsic QDs.     

Manipulating the Exciton Dynamics in a MoS2/WS2 Heterobilayer with a Si/Au Nanocavity

Manipulating the exciton dynamics in a heterobilayer (HB) composed of two transition metal dichalcogenides (TMDCs) is important in the development of photonic/plasmonic devices based on TMDC HBs. Here, the realization of such a manipulation in a MoS₂/WS₂ HB is reported by using a Si/Au hybrid nanocavity composed of a Si nanoparticle and an Au film, which is manifested in the modification in the photoluminescence (PL) of the embedded MoS₂/WS₂ HB. It is shown that a transition from PL quenching to PL enhancement can be achieved by adjusting the diameter of the Si nanoparticle, which modifies the plasmon resonance supported by the Si/Au nanocavity. More interestingly, it is demonstrated that the enhancement factor can be manipulated by shifting the exciton/trion resonance close to or far away from the plasmon resonance by simply increasing the laser power. It is revealed that the manipulation is realized by effectively controlling the strain and Purcell effects induced by the Si/Au nanocavity. A PL enhancement factor as large as ≈187 in the MoS₂/WS₂ HB at a high laser power is observed. The findings suggest the potential applications of dielectric-metal hybrid nanocavities in the manipulation of the exciton dynamics in TMDC HBs and the development of novel plasmonic devices.     

CdTe/CdZnTe多量子阱激子复合动力学性质的研究

报道了分子束外延制备的高质量CdTe/Cd_0.64Zn_0.36Te多量子阱结构的光学性质,由变温光致发光光谱讨论了随温度升高辐射线展宽和辐射复合效率降低的机理.在变密度激发的皮秒时间分辨光谱中,发现不同激发密度下发光衰减时间不同,并研究了它的机理.在高激发密度下观测到n=2的重空穴激子发光. 关键词：     

Calogero–Sutherland system with two types interacting spins

The dynamics of low-temperature (T = 5 K) photoluminescence spectra of Si/Si_1-x Ge _x /Si heterostructures (x = 0.045) under the influence of a stream of nonequilibrium phonons (heat pulses) propagating in the structure is investigated. The rapid evaporation of the electron–hole liquid in the quantum well of the structure is observed as the liquid is heated by nonequilibrium phonons. It is established that an increase in the exciton-gas density in the quantum well is caused by the evaporation of the electron–hole liquid and by an increase in the rate of exciton capture by the quantum well. It is shown that the interaction with nonequilibrium phonons results in the dissociation of bound-exciton complexes in the Si layers, which is accompanied by an increase in the exciton concentration and lifetime.     

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers.By measuring the exciton decay time as a function of the monitored emission energy at different temperatures,we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 12OK. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results.     

Electron-density-dependent optical spectra of a remotely-doped GaAs/Al0.33Ga0.67As single quantum well

We have measured electroreflectance (ER) and photoluminescence (PL) spectra of a high-quality remotely-doped GaAs/Al_0.33Ga_0.67As quantum well (QW) as a function of electron density. Both techniques show the transition from the electron Fermi energy to the ground hole subband, although it is enhanced in ER due to its strong blue shift with electron density. The negligible Stokes shift of the transition demonstrates that the holes involved in the recombination are not strongly localised, consistent with the absence of a distinct peak due to the Fermi edge singularity. The ER spectra show in addition several transitions from the Fermi energy to excited hole subbands. Transitions involving the second and third electron subbands shift to lower energy with electron density due to both the Stark shift induced by the charge in the QW and bandgap renormalisation, which we compare to calculations.     

Interwell exciton relaxation in semimagnetic asymmetric double quantum wells

The possibility of magnetic field control of the spectral and polarization characteristics of exciton recombination is examined in Cd(Mg, Mn) Te-based asymmetric double quantum wells. At low fields, the exciton transition in a semimagnetic well is higher in energy than that in a nonmagnetic well and the interwell exciton relaxation is fast. In contrast, when the energy order of the exciton transitions reverses at high fields, unexpectedly slow relaxation of σ⁻ polarized excitons from the nonmagnetic well to the σ⁺-polarized ground state in the semimagnetic well is observed. Strong dependence of the total circular polarization degree on the heavy-light hole splitting Δ _hh-lh in the nonmagnetic well is found and attributed to the spin dependent interwell tunneling controlled by exciton spin relaxation. Such a slowing down of the relaxation allows separation of oppositely spin-polarized excitons in adjacent wells. The text was submitted by the authors in English.     

Shake-up intersubband transitions observed in GaAs/AlGaAs quantum wells

Shake-up transitions involving QW hole subbands have been observed as satellites in selective photoluminescence spectra of undoped GaAs/AlGaAs QWs. These shake-up transitions are explained in terms of an interaction between localized exciton and valence-band hole states attached to the QW subbands, in which holes are shaken up from the n=1 heavy hole subband to higher subbands, either the n=1 light hole subband or the n=2 heavy hole subband. The required localization is due to the interface roughness; thus these new transitions are of intrinsic origin. From the observation of the intersubband shake-up processes we derive direct information about the hole inter-subband energies. Furthermore, the satellite intensity is strikingly enhanced in the presence of a magnetic field due to an increasing exciton localization related to the compression of its wave function in the field. The exciton wave function compression continues until its radius in the plane of the well is comparable with the radius of the "flat island" characterized by constant QW width. Accordingly, from the magnetic field dependence of the shake-up satellite intensity we can roughly estimate the size of the "flat islands" and consequently probe the interface roughness.     

Nonexponential Photoluminescence Dynamics in an Inhomogeneous Ensemble of Excitons in WSe2 Monolayers

The spectral and spatiotemporal dynamics of photoluminescence in monolayers of transition metal dichalcogenide WSe₂ obtained by mechanical exfoliation on a Si/SiO₂ substrate is studied over a wide range of temperatures and excitation powers. It is shown that the dynamics is nonexponential and, for times t exceeding ∼50 ps after the excitation pulse, is described by a dependence of the form 1/(t + t₀). Photoluminescence decay is accelerated with a decrease in the temperature and in the energy of emitting states. It is shown that the observed dynamics cannot be described by a bimolecular recombination process, such as exciton—exciton annihilation. A model that describes the nonexponential photoluminescence dynamics by taking into account the spread of radiative recombination times of localized exciton states in a random potential gives good agreement with experimental data.

     

Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots

We report the first resonant electronic Raman spectroscopy study of discrete electronic transitions within small p-doped self-assembled Si/Ge quantum dots (QDs). A heavy hole (hh) to light hole (lh) Raman transition with a dispersionless energy of 105 meV and a resonance energy of the hh states to virtually localised electrons at the direct band gap of 2.5 eV are observed. The hh–lh transition energy shifts to lower values with increasing annealing temperature due to significant intermixing of Si and Ge in the QDs. Structural parameters of the small Si/Ge dots have been determined and introduced into 6-band k·p valence band structure calculations. Both the value of the electronic Raman transition of localised holes as well as the resonance energy at the E₀ gap are in excellent agreement with the calculations.     

Photoluminescence dynamics of organic molecule-passivated Si nanoclusters

The size-selected phenyl-passivated Si nanoclusters with the mean diameters of 1.5 and 1.3 nm have been prepared in the solution route. The intense PL observed in Si nanoclusters, in which the band gap energies increase up to approximately 4 eV, originates from electron-hole pair recombination. From time-resolved PL, two kinds of exponential PL decay components with fast and slow lifetime were observed. The identical decays with slow lifetime will be derived from the surface states of Si nanoclusters passivated by phenyl molecules. The size-dependent zero-phonon assisted optical transitions by quantum size effects occur at a high rate of sub-nanosecond timescale.     

硅衬底生长的InGaN/GaN多层量子阱中δ型硅掺杂n-GaN层对载流子复合过程的调节作用

为了解决在单晶硅衬底上生长的InGaN/GaN多层量子阱发光二极管器件发光效率显著降低的问题,使用周期性δ型Si掺杂的GaN取代Si均匀掺杂的GaN作为n型层释放多层界面间的张应力。采用稳态荧光谱及时间分辨荧光谱测量,提取并分析了使用该方案前后的多层量子阱中辐射/非辐射复合速率随温度（10~300 K）的变化规律。实验结果表明引入δ-Si掺杂的n-GaN层后,非辐射复合平均激活能由（18±3）meV升高到（38±10）meV,对应非辐射复合速率随温度升高而上升的趋势变缓,室温下非辐射复合速率下降,体系中与阱宽涨落有关的浅能级复合中心浓度减小,PL峰位由531 nm左右红移至579 nm左右,样品PL效率随温度的衰减受到抑制。使用周期性δ型Si掺杂的GaN取代Si均匀掺杂的GaN作为生长在Si衬底上的InGaN/GaN多层量子阱LED器件n型层,由于应力释放,降低了多层量子阱与n-GaN界面、InGaN/GaN界面的缺陷密度,使得器件性能得到了改善。     

Oxygen deficiency effects on recombination lifetime and photoluminescence characteristics of ZnO thin films; correlation with crystal structure

The photoluminescence (PL), recombination lifetime (RL), and X-ray diffraction (XRD) spectra of the samples grown at various O₂ fractions of 0.290 (Zn-rich), 0.585 (moderate), and 0.836 (O-rich) over the total pressures in the growth chamber were investigated. XRD measurements revealed that all the films show highly preferred (0002) orientation. The PL measurements exhibit different dominant emissions in the ultraviolet (UV), violet and blue regions for Zn-rich, moderate and O-rich samples, respectively. Well-known green emission and high intensity of free exciton (FX) transition has been observed in Zn-rich sample after the sample is annealed at vacuum probably due to the oxygen deficiencies. Annealing the moderate sample gives rise to the UV emission at energy of 3.263 eV similar to the observed PL emission spectrum for the Zn-rich thin film. O-rich thin film exhibits a 338 meV acceptor level above the valance band maximum, most probably related to zinc vacancy (V_Zn). Free exciton RL measurements result in 568.23, 397.65, and 797.46 ps for Zn-rich, moderate, and O-rich thin films, respectively. A good correlation was found between crystallite size and the lifetime values.     

Calculating the nonequilibrium carrier relaxation kinetics in AlGaAs

The effect of the initial density of nonequilibrium electron–hole pairs on the kinetics of their relaxation is analyzed. The influence of cooling, formation, ionization, and radiative recombination of excitons is discussed. It is shown that the exciton lifetime increases with the optical excitation density and, as a result, maximum exciton density is attained for a longer time.     

Slow decay dynamics of visible photoluminescence from nanometer-size silicon crystallites

We have studied the decay dynamics of visible photoluminescence (PL) from nanometer-sized Si crystallites fabricated by electrochemical etching of single crystalline Si and laser-breakdown of SiH₄ gas. In two types of Si crystallites, the slow decay behavior of red PL is characterized by a stretched exponential function. The temperature dependence of the PL decay rate is similar to that of variable-range hopping of carriers in two-dimensional systems. It is concluded that the slow decay PL is caused by the hopping-limited recombination in surface states of nanocrystallines.PACS: 73.20.Dx; 78.66.-w; 78.90.+t     

On the observation of electron–hole liquid luminescence under low excitation in Al2O3‐passivated c‐Si wafers

We report on low‐temperature photoluminescence (PL) from aluminum oxide (Al₂O₃)‐passivated c‐Si wafers, which surprisingly exhibits clear signature of the formation of the so‐called electron–hole liquid (EHL), despite the use of excitation powers for which the condensed phase is not usually observed in bulk Si. The elevated incident photon densities achieved with our micro‐PL setup together with the relatively long exciton lifetimes associated with a good quality, indirect band‐gap semiconductor such as our float‐zone c‐Si, are considered the key aspects promoting photogenerated carrier densities above threshold. Interestingly, we observe a good correlation between the intensity of the EHL feature in PL spectra and the passivation performance of the Al₂O₃ layer annealed at different temperatures. The change in the extension of the sub‐surface space‐charge region that results from the balance between the induced fixed charge in the Al₂O₃ and the defect states at the alumina/Si interface is at the origin of the observed correlation. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Localized exciton dynamics in AlInGaN alloy

Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved PL (TRPL) at various temperatures. The fast red-shift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(−t/τ)^β], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed QDs or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent β on temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered QDs. Furthermore, the localized states are found to have 0D density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature.     

An alternative approach to exciton binding energy in a GaAs-AlxGa1-x as quantum well

A variational-perturbative method is used to calculate the binding energy of an exciton in quantum well structure of Al_xGa_1-xAs-GaAs-Al_xGa_1-xAs. The fitness of potential well heights and differences of electron or hole effective mass in barrier region are both taken into considerations. The binding energies as a function of GaAs well sizes and as a function of alloy compositions, and a photon energy emitted in the recombination of an exciton, are presented. Validity of the calculation is discussed.