用自洽的蒙特卡罗—流体结合模型模拟溅射过程

采用自洽的蒙特卡罗－流体结合模型对溅射过程进行模拟,以了解等离子体粒子行为与溅射参数的关系。溅射过程包括气体放电和溅射原子传输。对于气体放电,蒙特卡罗部分模拟快电子和快气体原子,而流体部分则描述离子和慢电子。对于溅射原子传输,蒙特卡罗部分模拟溅射原子的碰撞过程,而流体部分则描述溅射原子的扩散和漂移。模拟的结果包括：等离子体粒子的密度和能量分布;不同电离机制对气体原子和溅射原子电离的贡献;不同等离子体粒子对阴极溅射碰撞的贡献;溅射原子的密度分布;溅射场和溅射粒子相对于入射离子能量和角度的分布;溅射原子经碰撞后在整个等离子体区的分布。     

电子回旋共振放电的电离特性PIC/MCC模拟(Ⅰ)——物理模型与理论方法

采用粒子模拟与蒙特卡罗相结合(PIC/MCC)的方法对电子回旋共振(ECR)放电中的电离过程进行了模拟，其中带电粒子与微波的相互作用由PIC方法的电磁模型描述，粒子间的碰撞过程由MCC方法描述.考虑的碰撞类型有电子与中性粒子的弹性、激发、电离碰撞，离子与中性粒子的弹性、电荷交换碰撞，碰撞截面均依赖于能量而变化.阐述了理论分析的过程，为数值模拟ECR放电奠定了基础. 关键词： 电子回旋共振放电 粒子模拟 蒙特卡罗 电离     

离子推力器放电腔数值模拟

为更好地理解放电腔内等离子体物理机制,对Kaufman型离子推力器放电腔进行了数值研究,其中初始电子采用粒子模拟的方法处理,二次电子和离子采用漂移-扩散流体近似描述。模拟结果与已有实验测量数据进行对比表明：所采用计算方法适用于放电腔内等离子体流动规律的数值研究;模拟得到的稳态下等离子体分布及变化规律与实验测量数据相吻合;磁场的设计对初始电子起到显著的约束作用,有效地提高了其与工质气体的电离碰撞几率;二次电子的精确描述还需在流体方程中耦合磁场效应。     

电子回旋共振放电的电离特性PIC/MCC模拟(Ⅱ)——数值模拟与结果讨论

采用粒子模拟与蒙特卡罗相结合(PIC/MCC)的方法，应用电磁模型，编写了准三维的电子回旋共振(ECR)放电电离过程的模拟程序，得到了ECR放电过程中电子与离子的相空间分布、电磁场分布.通过对这些分布随时间演化的分析，得出ECR加热发生在ω≈ω_c0且垂直于轴向的区域；ECR区域，微波能量几乎全部耦合给电子，获得能量的电子通过与中性粒子的电离碰撞产生了大量的带电粒子；随着放电的进行，大量带电粒子通过频繁的碰撞，分布由各向异性逐渐趋于各向同性. 关键词： 电子回旋共振放电 粒子模拟 蒙特卡罗 电离     

电子回旋共振放电中电子与微波互作用特性的粒子模拟和蒙特卡罗碰撞模拟

对电子回旋共振（ECR）放电电离过程中的电子与微波互作用特性进行了理论分析与数值模拟.采用粒子模拟（PIC）方法描述带电粒子与微波的互作用,采用蒙特卡罗碰撞（MCC）方法描述粒子间碰撞过程及带电粒子与边界的相互作用.编写了准三维的PIC/MCC数值模拟程序,并对放电过程中电子能量与微波场随时间、空间的演化进行了数值诊断. 关键词： 电子回旋共振放电 粒子模拟 蒙特卡罗方法 电离     

计及溅射损失的平行板静电场法离子引出和收集

采用粒子模拟-Monte Carlo碰撞(particle in cell_Monte Carlo collision)方法研究了 原子蒸气激光同位素分离工程中一维平行板静电场法离子引出和收集过程，记录引出离子的 能量分布和角度分布，计算离子在收集板上造成的溅射损失.模拟结果表明，增加引出电压 可以缩短引出时间，降低碰撞损失，但是增加了溅射损失，使得收集率降低；增加电子温度 可以缩短引出时间，提高收集率；增加初始等离子体密度将使引出时间增加，收集率降低；而目标同位素丰度较高的情况下，离子引出过程的碰撞损失 关键词： 原子蒸气激光同位素分离 离子引出 溅射     

流体-亚稳态原子传输混合模型模拟空心阴极放电特性

利用流体-亚稳态原子传输混合模型研究了氩气矩形空心阴极放电稳态时的参数. 数值计算得到了压强为10 Torr时的电势、电子、离子和亚稳态氩原子密度以及电子平均能量的分布. 结果表明电子和离子密度峰值为4.7×10¹² cm^-3, 亚稳态原子密度峰值为2.1×10¹³ cm^-3. 本文同时对流体-亚稳态原子传输混合模型和单一流体模型模拟得到的放电参数进行了比较. 结果表明, 分步电离是新电子产生的重要来源, 亚稳态原子对空心阴极放电特性有重要影响. 与单一流体模型相比, 混合模型计算得到的电子密度升高, 阴极鞘层宽度和电子平均能量降低. 关键词： 空心阴极放电 流体-亚稳态原子传输模型 电子密度 分步电离     

电磁辐照金属铝膜材料释气效应研究

为研究空间环境中通用航天器表面覆盖的热控层电磁辐照效应,采用粒子模拟(PIC)和蒙特卡罗(MC)模拟相结合方法,建立了真空环境下电磁辐照航天器热控材料模型,模拟了场致电子发射、次级电子倍增、释气雪崩电离的全过程,并讨论了释气密度对热防护材料表面产生释气电离现象的影响。通过对比不同释气密度下该过程产生的电子和离子情况,获得热防护材料表面释气产生雪崩电离的阈值。模拟结果表明,当铝膜表面气体密度较小时,由于材料表面释气碰撞电离概率偏低而不会发生雪崩电离;只有当释气密度超过阈值时,材料表面释气碰撞电离过程加强,材料表面发生雪崩电离生成等离子体,等离子体吸收电磁波能量,其离子和电子总能量提升,可能对金属铝膜材料造成损伤。     

沿面闪络流体模型电离参数粒子模拟确定方法

介绍了粒子模拟确定高功率微波介质沿面闪络击穿流体模型相关电离参数的方法.对粒子模拟方法 (包括带电粒子动力学方程、次级电子发射以及蒙特卡罗碰撞模型)和流体整体模型方法 (包括连续性方程和能量守恒方程)做了简介.基于自编的1D3V粒子模拟-蒙特卡罗碰撞程序给出了在高(低)气压、不同气体种类以及不同微波场强和微波频率下流体模型电离参数的粒子模拟结果,包括电离频率、击穿时间、平均电子能量、电子能量分布函数类型.研究结果表明:平均电子能量与电子能量分布函数类型关系不大;中低气压下,电子能量接近Maxwell分布,电子能量分布函数类型对电离参数几乎没有影响;中高气压下,电子能量分布函数类型对电离参数有重要影响,其依赖系数X趋于高阶形式.不同气体的电子能量分布函数类型不同,需要利用粒子模拟对电子能量分布函数类型进行标定.同时,电子能量分布函数依赖系数与微波场强和频率也有关系,其随微波场强增加而增大,随微波频率增加而减小.在给定考察范围(微波场强在7 MV/m以下,微波频率在40 GHz以内),中低气压下,平均电子能量随微波场强增加而迅速增大,电离频率随微波场强增加先增大后降低,平均电子能量随微波频率增加而降低,电离频率随微波频率增加先增加后降低;高气压下,平均电子能量随微波场强增加而缓慢增大,电离频率随微波场强增加而增大,微波频率对平均电子能量和电离频率影响不大.     

圆柱形阳极层霍尔等离子体加速器的质点网格方法模拟

对圆柱形阳极层霍尔加速器内的放电等离子体运用二维质点网格方法（particle in cell）进行数值模拟,用蒙特卡罗碰撞方法处理带电粒子与中性粒子之间的碰撞. 得到了放电通道内离子与电子的分布以及离子流的运动,并且对出口外侧的能量分布进行了统计. 结果发现圆柱形阳极层等离子体加速器的磁场对电子有明显的约束作用,电子集中于阳极附近很小的区域内. 由于电磁场的特殊分布,离子流呈现出双峰式的分布. 离子能量范围从放电电压的20%到接近放电电压,平均能量在放电电压的40%—50%之间. 关键词： 质点网格方法 蒙特卡罗碰撞 数值模拟 阳极层霍尔等离子体加速器     

Probability of ionization of sputtered particles as a function of their energy: Part I: Negative Si ions

In this study we have investigated how the probability of ionization of sputtered Si atoms to form negative ions depends on the energy of the atoms. We have determined the ionization probability from experimental SIMS energy distributions using a special experimental technique, which included de-convolution of the energy distribution with an instrumental transmission function, found by separate measurements.We found that the ionization probability increases as a power law ∼E^0.677 for particles sputtered with energies of 0-10 eV, then becomes a constant value (within the limits of experimental error) for particles sputtered with energies of 30-100 eV. The energy distributions of Si⁻ ions, measured under argon and cesium ion sputtering, confirmed this radical difference between the yields from low and high-energy ions.To explain these results we have considered ionization mechanisms that are different for the low energy atoms (<10 eV) and for the atoms emitted with higher energy (>30 eV).     

Sputtering studies with the Monte Carlo Program TRIM.SP

The Monte Carlo Program TRIM.SP (sputtering version of TRIM) was used to determine sputtering yields and energy and angular distributions of sputtered particles in physical (collisional) sputtering processes. The output is set up to distinguish between the contributions of primary and secondary knock-on atoms as caused by in- and outgoing incident ions, in order to get a better understanding of the sputtering mechanisms and to check on previous theoretical models. The influence of the interatomic potential and the inelastic energy loss model as well as the surface binding energy on the sputtering yield is investigated. Further results are sputtering yields versus incident energy and angle as well as total angular distributions of sputtered particles and energy distributions in specific solid angles for non-normal incidence. The calculated data are compared with experimental results as far as possible. From this comparison it turns out that the TRIM.SP is able to reproduce experimental results even in very special details of angular and energy distributions.     

Effect of temperature on the sputtering of surface metallic clusters

Sputtering of a cluster of 75 copper atoms from a copper-substrate surface by 200-eV argon ions is simulated using a molecular-dynamics method for target equilibrium temperatures of 0, 300, and 500 K. The sputtering coefficients of the substrate and the cluster and the angular and energy distributions of the sputtered atoms are studied. The mechanisms behind the influence of the thermal atomic vibrations on the sputtering yield of surface metallic clusters are discussed.     

Sputtered atom transport processes

It is noted that the transport of sputtered atoms can be described in terms of three pressure regimes: low pressure, where no collisions occur during the trajectory of the atom; intermediate pressure, where the atom undergoes perhaps several collisions but does not completely thermalize; and high pressure, where the sputtered atom effectively stops and begins a density-gradient-driven conventional gas-phase diffusion process. The intermediate region is the most complicated to model, given the dependence of the energy on the collision cross-section, the various distributions in energy and angle of the sputtered atoms, and the extended nature of most sputtering sources. Experimental studies reported here have measured the transport probability by observing the distribution of atoms around a chamber following sputtering. The transport is found to be quite dependent on the mass of both the sputtered atom and the background gas, as well as the particle density and geometry of the vacuum system. A strong effect of sputtered-atom-induced gas rarefaction has also been observed. This results in power-dependent transport of sputtered atoms, and as a result may also lead to power-dependent compositional variation in alloy depositions. The general result is that high discharge powers tend to correlate with lower power operation at a significantly lower operating pressure than had been assumed     

Impact of an ion-flux non-uniformity on the sputtering of a target with a surface relief in a glow discharge plasma

The distribution of the sputtering yield averaged over the ion energy and flux density of sputtered atoms in a glow discharge plasma on a surface with a small-amplitude periodic relief has been calculated. The average sputtering yield of the target has a minimum at tops of the relief due to the energy separation of ions within the near-electrode discharge layer, while the flux density of sputtered atoms in this case is maximized due to the higher density of the ion flux on these areas.     

Optical emission spectroscopy of the sputtering process in the triode system

The results of spectroscopic investigation of plane plasma discharge and sputtering processes in the triode system are presented. The forced electric discharge with currents of 1–4 A at an argon pressure of 1 mTorr was studied using the emission spectroscopy method. The spectra of plasma discharge were observed in the 200–1100 nm wavelength range. Two metal targets, gold and silver, were used for sputtering. It was found that a part of sputtered particles is ionized in plasma. The emission spectra of the ionized gold and silver species were observed as a function of target voltage while sputtering. It was shown that the number of ionized metal species depends on the energy of argon ions.     

Self-sputtering and reflection

Selfsputtering and reflection are investigated with the Monte Carlo program TRIMSP. The results include particle and energy reflection coefficients, sputtering yields and sputtered energy versus incident angle and energy. Angular and energy distributions of reflected and sputtered particles are also given. Reflection and sputtering values are compared to show their contributions to selfsputtering. A comparison of calculated sputtering yields and sputtering efficiencies (sputtered and reflected energy) with experimental data is carried out. The systems investigated are mainly the bombardement of C, Ni, and W with self-ions at low energies. All global results are summarized in graphs, where scaling properties are utilized including the sputtering yield in a generalized form.     

Secondary-ion emission from clean and oxygen-covered beryllium surfaces: II. Energy dependence

The secondary-ion energy distribution obtained by sputtering clean and oxygen-covered Be has been analyzed in terms of competing processes in secondary ion emission. The ion energy distribution N⁺(E) has been separated into an ionization coefficient R⁺(E) and a total energy distribution, N(E), i.e. N⁺(E) = R⁺(E) N(E). Experimentally, the dependence of R⁺(E) on both energy and oxygen coverage indicated a linear superposition of adiabatic tunneling and resonanance ionization processes from clean and oxygen-covered portions of the surface with no contributions to the secondary-ion yield from regions of intermediate coverage. Total energy distributions of sputtered Be atoms have been deduced and the principal features agree with the predictions of the collision cascade sputtering model. Variations of the energy distributions with oxygen coverage are in accord with small changes expected in the surface binding energy as a result of surface oxidation.