Interwell excitons in semimagnetic semiconductor double quantum wells in an external magnetic field

Physics of the Solid State - The use of semimagnetic semiconductor double quantum wells in an external magnetic field is suggested for the separation of exciton charges. The exciton energies and...     

Exciton states in strongly coupled asymmetric semimagnetic double quantum dots

Exciton states in a pair of strongly coupled artificial asymmetric quantum dots (QDs) have been studied in magnetic fields up to B = 8T by means of photoluminescence spectroscopy. The QD molecules have been fabricated using a selective interdiffusion technique applied to asymmetric CdTe/(Cd,Mg,Mn)Te double quantum wells. The lateral confinement potential within the plane induced by the diffusion gives rise to effective zero-dimensional exciton localization. Incorporation of the Mn ions in only one dot results in a pair of QDs with a markedly different spin splitting. In contrast to a positive value of the exciton Lande g factor in nonmagnetic (Cd,Mg)Te-based single QDs, the ground exciton transition in the nonmagnetic QD demonstrates nearly zero g factor, thus, indicating a strong electron coupling between the dots. A new low-energy band with a strong red shift appears at high B signifying formation of the indirect exciton in accordance with our calculations. The text was submitted by the authors in English.     

Cyclotron resonance in asymmetric double quantum wells

Far-infrared magnetotransmission measurements in magnetic fields are carried out on asymmetric coupled double wells. We observe a splitting in the cyclotron resonance (CR) line for a wide range of intermediate magnetic fields and only one line at high magnetic fields. Two peaks observed in the CR spectra correspond to transitions between Landau levels in individual wells. We propose that phase transition between weak and strong coupling regimes may be responsible for the features. The characteristics of the transition are studied via an analysis of CR masses, CR splitting and line widths as a function of the magnetic field.     

Electromagnetically induced transparency in asymmetric double quantum wells

We show how to compute nonlinear optical absorption spectra of an Asymmetric Double Quantum Well (ADQW) in the region of intersubband electronic transitions. The method uses the microscopic calculation of the dephasing due to electron-electron and electron-phonon scattering rates and the macroscopic real density matrix approach to compute the electromagnetic fields and susceptibilities. The polarization dephasing and the corrections to the Rabi frequencies due to the electron-electron interaction are also taken into account. For a proper choice of the QW widths and of the driving fields we obtain electromagnetically induced transparency. This transparency has a very narrow linewidth when a single driving field is applied resonant to the transition between the second and the third subband. In the case of two resonant driving fields or of a driving field resonant between the first and third subband we obtain a large transparency enhancement over the entire absorption spectrum. Results are given for GaAs/GaAlAs QWs and experiments are proposed. Received 21 June 2001 and Received in final form 21 January 2002     

Maxwell relaxation of excitons in double quantum wells

The spreading of dipolar excitons in double quantum wells is described by a nonlinear continuity equation. It has been shown that the law of corresponding states holds, which allows one to find the dependence of the characteristic process parameters on the amplitude and width of the initial distribution. In contrast to usual (linear) diffusion, the spreading occurs much faster in the one-dimensional case than in the two-dimensional case.     

Magnetotunneling relaxation of electrons in double quantum wells

Electron tunneling relaxation in double quantum wells subject to a transverse magnetic field is studied. The resonant peaks in the tunneling relaxation rate appear when the energy splitting Δ of the tunnel-coupled pair of the left- and right- well electron states is a multiple of the cyclotron energy ℏω_c and two series of the Landau levels coincide. The shape of such resonant oscillations of the relaxation rate is determined by the Landau levels' broadening (which is associated with the intrawell scattering in the case of small tunnel coupling), but it is not expressed through the electron density of states directly. The dependence of the tunneling relaxation rate on ℏω_c and Δ is calculated taking into account elastic scattering of the electrons by the inhomogeneities of the structure in the limit when the scattering potential is slowly changing on the magnetic length scale.     

High-resolution nonlinear laser spectroscopy of exciton relaxation in GaAs quantum wells

This paper describes measurements of exciton relaxation in GaAs/AlGaAs quantum well structures based on high resolution nonlinear laser spectroscopy. The nonlinear optical measurements show that low energy excitons can be localized by monolayer disorder of the quantum well interface. We show that these excitons migrate between localization sites by phonon assisted migration, leading to spectral diffusion of the excitons. The frequency domain measurements give a direct measure of the quasi-equilibrium exciton spectral redistribution due to exciton energy relaxation, and the temperature dependence of the measured migration rates confirms recent theoretical predictions. The observed line shapes are interpreted based on solutions we obtain to modified Bloch equations which include the effects of spectral diffusion.     

Interwell excitons in GaAs/AlGaAs double quantum wells and their collective properties

Luminescence spectra of interwell excitons in GaAs/AlGaAs double quantum wells with electric-field-tilted bands (n-i-n) structures were studied. In these structures the electron and the hole in the interwell exciton are spatially separated between neighboring quantum wells by a narrow AlAs barrier. Under resonant excitation by circularly polarized light the luminescence line of the interwell excitons exhibited appreciable narrowing as their concentration increased and the degree of circular polarization of the photoluminescence increased substantially. Under resonant excitation by linearly polarized light the alignment of the interwell excitons increased as a threshold process with increasing optical pumping. By analyzing time-resolved spectra and the kinetics of the photoluminescence intensity under pulsed excitation it was established that under these conditions the rate of radiative recombination increases substantially. The observed effect occurs at below-critical temperatures and is interpreted in terms of the collective behavior of the interwell excitons. Studies of the luminescence spectra in a magnetic field showed that the collective exciton phase is dielectric and in this phase the interwell excitons retain their individual properties.     

LO-phonon assisted tunneling from spatially direct to indirect exciton in semimagnetic double quantum well structures

Relaxation from spatially direct to the spatially indirect exciton through ZnSe barriers of different thicknesses is investigated in (ZnCdMn)Se/ZnSe/(ZnCd)Se asymmetric double quantum wells by use of magneto-optical steady-state photoluminescence (PL) and PL excitation (PLE) experiments. The 1-LO-phonon scattering has been found to be the relevant mechanism for effective electron and hole tunneling.     

Nonlinear optical rectification in asymmetric double triangular quantum wells

The nonlinear optical rectification (OR) in the asymmetric double triangular quantum wells (DTQWs) is investigated theoretically. The dependence of OR on the right-well width of the DTQWs is studied, and the influence of the applied electric field on OR is also taken into account. The analytical expression of the OR susceptibility is analyzed by using the compact density-matrix approach and the iterative method and the numerical calculations are presented for the typical GaAs/Al_xGa_1-xAs asymmetric DTQWs. The results show that the OR susceptibility obtained in this coupled system can reach the magnitude of 10^-3 m/V, 2-3 orders of magnitude higher than that in single quantum systems. Moreover, the OR susceptibility is not a monotonic function of the width of the right well, but has complex relationship with it. The calculated results also reveal that an applied electric field has a great influence on the OR susceptibility. Applying an appropriate electric field to a quasi-symmetric or symmetric DTQW can result in a larger OR susceptibility as compared with that obtained in an optimal asymmetric DTQW without electric field.     

Relaxation of polarized excitons in asymmetric double quantum wells

Il Nuovo Cimento D - We consider the intrawell and interwell relaxation of circularly polarized excitons in an asymmetric double-quantum-well structure. For the intrawell case (photocreated light...     

Luminescence of excitons in slightly asymmetric double quantum wells

We report the first studies of exciton luminescence spectra from asymmetric double quantum wells (DQWs) of very similar width. The DQWs were of GaAs/AlGaAs and the differences in widths of the coupled wells were one or two monolayers. The coupled direct and indirect exciton states anticross with a resonance splitting of 1.33 meV. An additional luminescence line appearing at low temperatures is identified as a localized indirect exciton. Fiz. Tverd. Tela (St. Petersburg) 39, 735–739 (April 1997)     

Charge and energy transfer in double asymmetric quantum wells with quantum dots

The luminescence and luminescence excitation spectra of CdSe/ZnSe quantum dots are studied in a set of double quantum wells with the ZnSe barrier of width 14 nm, the same amount of a deposited CdSe layer forming a deep well and shallow wells with different depths. It is found that for a certain relation between the depths of shallow and deep wells in this set, conditions are realized under which the exciton channel in the luminescence excitation spectrum of a shallow well dominates in the region of kinetic exciton energies exceeding 10 longitudinal optical phonons above the bottom of the exciton band of the ZnSe barrier. A model is developed for the transfer of electrons, holes, and excitons between the electronic states of shallow and deep quantum wells separated by wide enough barriers. It is shown that the most probable process of electronic energy transfer between the states of shallow and deep quantum wells is indirect tunneling with the simultaneous excitation of a longitudinal optical phonon in the lattice. Because the probability of this process for single charge carriers considerably exceeds the exciton tunneling probability, a system of double quantum wells can be prepared in which, in the case of weak enough excitation, the states of quantum dots in shallow quantum wells will be mainly populated by excitons, which explains experimental results obtained.     

Mechanism of THz emission from asymmetric double quantum wells

Impulsive interband optical excitation of the lowest two conduction subbands of a suitably engineered GaAs/AlGaAs double quantum well can lead to coherent THz emission. We demonstrate that, contrary to previous expectations, the dominant emission mechanism can involve the beating of either continuum or exciton states, depending on excitation conditions. The coherence of the continuum beats persists for several picoseconds even for excitation an optical phonon energy above the band edge. We attribute this to the small energy difference between the component eigenstates, which substantially reduces the number of relevant scattering events.     

Optical second harmonic generation in asymmetric double triangular quantum wells

The second harmonic generation (SHG) in the asymmetric double triangular quantum wells (DTQWs) is investigated theoretically. The dependence of the SHG coefficient on the right-well width of the DTQWs is studied, and the influence of the applied electric field on SHG coefficient is also taken into account. The analytical expression of the SHG coefficient is analyzed by using the compact density-matrix approach and the iterative method. Finally, the numerical calculations are presented for the typical GaAs/Al_xGa_1−xAs asymmetric DTQWs. The results show that the calculated SHG coefficient in this coupled system can reach the magnitude of 10⁻⁵ m/V, 1–2 orders of magnitude higher than that in step quantum well, and that in double square quantum wells. Moreover, the SHG coefficient is not a monotonic function of the right-well width, but has complex relationship with it. The calculated results also reveal that an applied electric field has a great influence on the SHG coefficient. Applying an appropriate electric field to a DTQW with a wider right well can induce a sharper peak of the SHG coefficient due to the double-resonant enhancement.     

Modeling of electron tunneling times in asymmetric double quantum wells

A scattering process modeled by an imaginary potential V _I in the wide well of an asymmetric double quantum well structure (DQWS) is used to model the electron tunneling from the narrow well. Taking V _I –5 meV, the ground resonant level lifetimes of the narrow well in the DQWS are in quantitative agreement with the experimental resonance and non-resonance tunneling times. The corresponding scattering time 66 fs is much faster than the intersubband scattering time of LO-photon emission.